JPS5779624A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5779624A JPS5779624A JP15461580A JP15461580A JPS5779624A JP S5779624 A JPS5779624 A JP S5779624A JP 15461580 A JP15461580 A JP 15461580A JP 15461580 A JP15461580 A JP 15461580A JP S5779624 A JPS5779624 A JP S5779624A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- thickness
- dielectric thin
- semiconductor substrate
- annealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 230000001419 dependent effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To make thickness of a mask material thin without giving restriction to the succeeding manufacturing process and without obstructing stability of a semiconductor device by a method wherein a semiconductor substrate is annealed selectively with the laser beam making a dielectric thin film on the semiconductor substrate having two kinds of thickness as a mask. CONSTITUTION:The semiconductor substrate 21 is formed with Si, the dielectric thin films 22, 23 of SiO2 are formed thereon, thickness of the dielectric thin films 22, 23 and the sum of thickness thereof are formed respectively as to come to the neighborhood of the maximum, the neighborhood of the minimum of transmittivity, and intensity of the laser beam 24 is decided by setting transmiting energy being necessitated for annealing of Si as to come between the maximum and the minimum of transmittivity. Accordingly the ground region 25 of the dielectric thin film 23 is annealed, the other region of the semiconductor substrate 21 is not annealed, and selective annealing can be attained. The property of the laser beam wherei multiple reflection phenomenon of the laser beam is dependent upon wave length of the laser beam and is dependent upon thickness of the dielectric thin film is utilized in this manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15461580A JPS5779624A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15461580A JPS5779624A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779624A true JPS5779624A (en) | 1982-05-18 |
Family
ID=15588050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15461580A Pending JPS5779624A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779624A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014443A (en) * | 1983-07-04 | 1985-01-25 | Nec Corp | Annealing method of semiconductor wafer |
| JPS61251113A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Single crystallization of non-single crystal layer |
| CN112768354A (en) * | 2020-12-30 | 2021-05-07 | 济南晶正电子科技有限公司 | Annealing method, composite film and electronic element |
-
1980
- 1980-11-05 JP JP15461580A patent/JPS5779624A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014443A (en) * | 1983-07-04 | 1985-01-25 | Nec Corp | Annealing method of semiconductor wafer |
| JPH0340937B2 (en) * | 1983-07-04 | 1991-06-20 | ||
| JPS61251113A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Single crystallization of non-single crystal layer |
| CN112768354A (en) * | 2020-12-30 | 2021-05-07 | 济南晶正电子科技有限公司 | Annealing method, composite film and electronic element |
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