JPS5772373A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5772373A JPS5772373A JP14762380A JP14762380A JPS5772373A JP S5772373 A JPS5772373 A JP S5772373A JP 14762380 A JP14762380 A JP 14762380A JP 14762380 A JP14762380 A JP 14762380A JP S5772373 A JPS5772373 A JP S5772373A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- region
- semiconductor region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To miniaturize the whole element, and to minimize power consumption by each forming a single crystal region and a polycrystal region on an insulating film. CONSTITUTION:A P type semiconductor region 4 is formed through a hole shaped into the insulating film layer 6 from the main surface side in a substrate 1 in which an N type semiconductor layer 1b having comparatively high resistivity is molded onto an N<+> type substrate 1a having comparatively low resistivity. An N type semiconductor layer is further grown on the main surface containing the insulating film layer 6 in an epitaxial manner. In this case, a section on the semiconductor region 4 functions as the signal crystal layer 7 and a section on the insulating film layer 6 as the polycrystal layer 8. A vertical bipolar-transistor is formed among the single crystal layer 7, the semiconductor region 4 and the substrate 1, and the semiconductor region 4 serves as its floating-base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14762380A JPS5772373A (en) | 1980-10-23 | 1980-10-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14762380A JPS5772373A (en) | 1980-10-23 | 1980-10-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772373A true JPS5772373A (en) | 1982-05-06 |
Family
ID=15434506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14762380A Pending JPS5772373A (en) | 1980-10-23 | 1980-10-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772373A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912538A (en) * | 1985-12-20 | 1990-03-27 | Licentia Patent-Verwaltungs Gmbh | Structured semiconductor body |
US4949146A (en) * | 1985-12-20 | 1990-08-14 | Licentia Patent-Verwaltungs Gmbh | Structured semiconductor body |
-
1980
- 1980-10-23 JP JP14762380A patent/JPS5772373A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912538A (en) * | 1985-12-20 | 1990-03-27 | Licentia Patent-Verwaltungs Gmbh | Structured semiconductor body |
US4935375A (en) * | 1985-12-20 | 1990-06-19 | Licentia Patent-Verwaltungs-Gmbh | Method of making a semiconductor device |
US4949146A (en) * | 1985-12-20 | 1990-08-14 | Licentia Patent-Verwaltungs Gmbh | Structured semiconductor body |
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