JPS5752182A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS5752182A JPS5752182A JP55128359A JP12835980A JPS5752182A JP S5752182 A JPS5752182 A JP S5752182A JP 55128359 A JP55128359 A JP 55128359A JP 12835980 A JP12835980 A JP 12835980A JP S5752182 A JPS5752182 A JP S5752182A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdte film
- type
- thin film
- type cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 6
- 229910004613 CdTe Inorganic materials 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a thin film type bipolar transistor having high stability, high reliability and high sensitivity by enabling to form an arbitrary shape with ready manufacture through the employment of CdTe film. CONSTITUTION:A transparent conductive film 2, e.g., In2O3 or the like is formed on a phototransmissive substrate 1, and an N type CdTe film 3 is laminated as an emitter region by a sputtering method or vacuum deposition method or the like. Then, P type CdTe film 4 and an N type CdTe film 5 are sequentially laminated in the same method on an N type CdTe film 3 as base and collector regions. Then, the electrode 6 made of gold or the like is deposited thereon. In this manner, a phototransistor of high sensitivity can be formed by the emission of the light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128359A JPS5752182A (en) | 1980-09-16 | 1980-09-16 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128359A JPS5752182A (en) | 1980-09-16 | 1980-09-16 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5752182A true JPS5752182A (en) | 1982-03-27 |
Family
ID=14982863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55128359A Pending JPS5752182A (en) | 1980-09-16 | 1980-09-16 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5752182A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60157273A (en) * | 1984-01-25 | 1985-08-17 | Matsushita Electric Ind Co Ltd | Manufacture of thin film photo transistor |
| JPS60190555U (en) * | 1984-05-29 | 1985-12-17 | 株式会社 桜井製作所 | machining center |
| JPS60258977A (en) * | 1984-06-05 | 1985-12-20 | Matsushita Electric Ind Co Ltd | Photo transistor |
| JPS616878A (en) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | Thin-film transistor and manufacture thereof |
-
1980
- 1980-09-16 JP JP55128359A patent/JPS5752182A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60157273A (en) * | 1984-01-25 | 1985-08-17 | Matsushita Electric Ind Co Ltd | Manufacture of thin film photo transistor |
| JPS60190555U (en) * | 1984-05-29 | 1985-12-17 | 株式会社 桜井製作所 | machining center |
| JPS60258977A (en) * | 1984-06-05 | 1985-12-20 | Matsushita Electric Ind Co Ltd | Photo transistor |
| JPS616878A (en) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | Thin-film transistor and manufacture thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS52116896A (en) | Electrode plate and its preparation | |
| JPS5752182A (en) | Thin film transistor | |
| SU797657A1 (en) | Electric luminescent cell | |
| JPS56152278A (en) | Device for generating photo-electromotive force | |
| JPS5752183A (en) | Manufacture of thin film transistor | |
| JPS56114384A (en) | Solar battery | |
| JPS5632774A (en) | Thin film type photovoltaic element and manufacture thereof | |
| JPS5555580A (en) | Method of fabricating solar battery | |
| JPS5684882A (en) | Electric power-generating element | |
| JPS5745980A (en) | Amorphous solar battery and manufacture thereof | |
| JPS575372A (en) | Thin film diode and manufacture thereof | |
| JPS57155784A (en) | Photodiode | |
| JPS5713775A (en) | Photocell structure and manufacture thereof | |
| JPS5259888A (en) | Manufacturing of two layer transparent conduction film | |
| JPS5717188A (en) | Semiconductor light-emitting element | |
| JPS56164574A (en) | Transistor | |
| JPS571270A (en) | Photoelectric conversion element | |
| JPS6414891A (en) | Thin film el element | |
| JPS56164575A (en) | Thin film transistor | |
| JPS5766665A (en) | Image sensor | |
| JPS54157496A (en) | Manufacture of tunnel junction | |
| JPS64773A (en) | Photovoltaic element | |
| JPS5688374A (en) | Evaporated thin film diode | |
| JPS6420672A (en) | Manufacture of photosensor | |
| JPS56157074A (en) | Photoelectric transducer |