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JPS5752175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5752175A
JPS5752175A JP55128311A JP12831180A JPS5752175A JP S5752175 A JPS5752175 A JP S5752175A JP 55128311 A JP55128311 A JP 55128311A JP 12831180 A JP12831180 A JP 12831180A JP S5752175 A JPS5752175 A JP S5752175A
Authority
JP
Japan
Prior art keywords
transistor
gate
transistors
field effect
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55128311A
Other languages
Japanese (ja)
Other versions
JPS6210031B2 (en
Inventor
Kiyoto Matsumoto
Osamu Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55128311A priority Critical patent/JPS5752175A/en
Publication of JPS5752175A publication Critical patent/JPS5752175A/en
Publication of JPS6210031B2 publication Critical patent/JPS6210031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an impedance conversion element having short recovery time against positive or negative pulse input by connecting the first and second transistors in parallel between the gate and the source of a junction type field effect transistor. CONSTITUTION:The collectors 15, 16 of P-N-P type transistors 11, 12 are connected to the input gate 14 of an N-channel junction type field effect transistor 13, and the emitters 18, 19 of the transistors 11, 12 are connected to the source 17. The base 20 of the transistor 11 is connected to the emitter 18, and the base 21 of the transistor 12 is connected to the collector 16. When positive pulse voltage is applied to the input gate 14 in this circuit configuration, large quantity of leakage current flows through the transistor 11, and when negative pusle voltage is applied to the gate, large quantity of leakage current flows through the transistor 12, with the result that the recovery of the junction type field effect transistor 13 can be accelerated for the pulse input.
JP55128311A 1980-09-16 1980-09-16 Semiconductor device Granted JPS5752175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55128311A JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128311A JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5752175A true JPS5752175A (en) 1982-03-27
JPS6210031B2 JPS6210031B2 (en) 1987-03-04

Family

ID=14981628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55128311A Granted JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168150U (en) * 1982-05-04 1983-11-09 三洋電機株式会社 FET for condenser microphone

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0245135U (en) * 1988-09-16 1990-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168150U (en) * 1982-05-04 1983-11-09 三洋電機株式会社 FET for condenser microphone

Also Published As

Publication number Publication date
JPS6210031B2 (en) 1987-03-04

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