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JPS57181162A - Gate turn off thyristor - Google Patents

Gate turn off thyristor

Info

Publication number
JPS57181162A
JPS57181162A JP6595181A JP6595181A JPS57181162A JP S57181162 A JPS57181162 A JP S57181162A JP 6595181 A JP6595181 A JP 6595181A JP 6595181 A JP6595181 A JP 6595181A JP S57181162 A JPS57181162 A JP S57181162A
Authority
JP
Japan
Prior art keywords
layer
emitter
type
region
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6595181A
Other languages
Japanese (ja)
Inventor
Minoru Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6595181A priority Critical patent/JPS57181162A/en
Priority to DE8282103228T priority patent/DE3277352D1/en
Priority to EP19820103228 priority patent/EP0064614B1/en
Publication of JPS57181162A publication Critical patent/JPS57181162A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To mitigate current concentration at the time of turn off and to control thermal runaway by providing the second emitter region with a region forming a depletion layer by zero bias and having the same conductive type low impurity density as that of the second emitter region. CONSTITUTION:A first P type emitter layer 11, first N type base layer 12, second P type base layer 13, and second mesa-shaped N type emitter layer 14 are successively stacked. An insulating film 18 covering the exposed part of the P-N junction around the second mesa-shaped emitter layer 14 is provided and electrodes 15, 16, 17 are mounted to form GTO. At that time, an N<-> type layer 19 is provided in the second emitter layer as the same conductive type low impurity region as that of the second emitter layer and current is completely interrupted. In this way, local current concentration generated at the time of turn off is reduced.
JP6595181A 1981-04-30 1981-04-30 Gate turn off thyristor Pending JPS57181162A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6595181A JPS57181162A (en) 1981-04-30 1981-04-30 Gate turn off thyristor
DE8282103228T DE3277352D1 (en) 1981-04-30 1982-04-16 Improved emitter structure for semiconductor devices
EP19820103228 EP0064614B1 (en) 1981-04-30 1982-04-16 Improved emitter structure for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6595181A JPS57181162A (en) 1981-04-30 1981-04-30 Gate turn off thyristor

Publications (1)

Publication Number Publication Date
JPS57181162A true JPS57181162A (en) 1982-11-08

Family

ID=13301790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6595181A Pending JPS57181162A (en) 1981-04-30 1981-04-30 Gate turn off thyristor

Country Status (1)

Country Link
JP (1) JPS57181162A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231859A (en) * 1983-06-14 1984-12-26 Mitsubishi Electric Corp Gate turn-off thyristor
JPS6027169A (en) * 1983-07-25 1985-02-12 Internatl Rectifier Corp Japan Ltd Thyristor
JPS61199663A (en) * 1985-03-01 1986-09-04 Fuji Electric Co Ltd Gto thyristor
JPS6252967A (en) * 1985-08-31 1987-03-07 Fuji Electric Co Ltd Gto thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231859A (en) * 1983-06-14 1984-12-26 Mitsubishi Electric Corp Gate turn-off thyristor
JPS6027169A (en) * 1983-07-25 1985-02-12 Internatl Rectifier Corp Japan Ltd Thyristor
JPS61199663A (en) * 1985-03-01 1986-09-04 Fuji Electric Co Ltd Gto thyristor
JPS6252967A (en) * 1985-08-31 1987-03-07 Fuji Electric Co Ltd Gto thyristor

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