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JPS57188680A - Target for sputtering and production thereof - Google Patents

Target for sputtering and production thereof

Info

Publication number
JPS57188680A
JPS57188680A JP7398481A JP7398481A JPS57188680A JP S57188680 A JPS57188680 A JP S57188680A JP 7398481 A JP7398481 A JP 7398481A JP 7398481 A JP7398481 A JP 7398481A JP S57188680 A JPS57188680 A JP S57188680A
Authority
JP
Japan
Prior art keywords
target
base body
solderable
metal
target base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7398481A
Other languages
Japanese (ja)
Other versions
JPS645112B2 (en
Inventor
Fujio Ishikawa
Susumu Taira
Masahiko Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KEMISUTON KK
PLASMA GIKEN KOGYO KK
PURAZUMA GIKEN KOGYO KK
Mitsubishi Metal Corp
Original Assignee
KEMISUTON KK
PLASMA GIKEN KOGYO KK
PURAZUMA GIKEN KOGYO KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KEMISUTON KK, PLASMA GIKEN KOGYO KK, PURAZUMA GIKEN KOGYO KK, Mitsubishi Metal Corp filed Critical KEMISUTON KK
Priority to JP7398481A priority Critical patent/JPS57188680A/en
Publication of JPS57188680A publication Critical patent/JPS57188680A/en
Publication of JPS645112B2 publication Critical patent/JPS645112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve the heat conductivity, strength and utilization rate of a target by applying a solderable metal on a target base body consisting of a hard to solder material thereby making it solderable to a target holder, etc. CONSTITUTION:A metal is melt sprayed on one surface of a target base body formed of a hard or impossible to solder metal, oxide, boride, carbide, nitride, silicide or the like, whereby a solderable metallic film is formed. This metallic film surface and a packing plate or a target holder are joined by soldering. The target is fixed in this way, whereby it is prevented from crazing and is made easy to cool, and the target base body is used efficiently.
JP7398481A 1981-05-16 1981-05-16 Target for sputtering and production thereof Granted JPS57188680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7398481A JPS57188680A (en) 1981-05-16 1981-05-16 Target for sputtering and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7398481A JPS57188680A (en) 1981-05-16 1981-05-16 Target for sputtering and production thereof

Publications (2)

Publication Number Publication Date
JPS57188680A true JPS57188680A (en) 1982-11-19
JPS645112B2 JPS645112B2 (en) 1989-01-27

Family

ID=13533872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7398481A Granted JPS57188680A (en) 1981-05-16 1981-05-16 Target for sputtering and production thereof

Country Status (1)

Country Link
JP (1) JPS57188680A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6447864A (en) * 1987-08-17 1989-02-22 Seiko Epson Corp Method for joining sputtering target
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
WO2004065046A3 (en) * 2003-01-22 2004-09-30 Tosoh Smd Inc Brittle material sputtering target assembly and method of making same
WO2010084597A1 (en) * 2009-01-23 2010-07-29 トヨタ自動車株式会社 Sealed structure
JP2013529253A (en) * 2010-05-21 2013-07-18 ユミコア エセ．アー． Non-continuous bonding of sputtering target to backing material
JP2015132013A (en) * 2013-12-13 2015-07-23 Jx日鉱日石金属株式会社 Sputtering target and production method thereof
JP2017145459A (en) * 2016-02-17 2017-08-24 三菱マテリアル株式会社 Sputtering target
JP2017203666A (en) * 2016-05-10 2017-11-16 株式会社アルバック Manufacturing method of moisture detecting element, manufacturing method of water disintegrating wiring film, manufacturing method of water disintegrating thin film, and moisture detecting element
US9831073B2 (en) 2012-02-14 2017-11-28 Tosoh Smd, Inc. Low deflection sputtering target assembly and methods of making same
CN107617825A (en) * 2016-07-14 2018-01-23 宁波江丰电子材料股份有限公司 The manufacture method of nickel target material assembly
CN107971620A (en) * 2017-11-29 2018-05-01 宁波江丰电子材料股份有限公司 A kind of tungsten target material diffusion welding method and target material assembly
CN108067723A (en) * 2016-11-18 2018-05-25 宁波江丰电子材料股份有限公司 The manufacturing method of target material assembly
CN108247190A (en) * 2018-01-18 2018-07-06 宁波江丰电子材料股份有限公司 Tungsten target material diffusion welding structure and tungsten target material diffusion welding method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488885A (en) * 1977-12-26 1979-07-14 Matsushita Electric Ind Co Ltd Insulator target for sputtering device
JPS5633476A (en) * 1979-08-21 1981-04-03 Siemens Ag Fixing of target material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488885A (en) * 1977-12-26 1979-07-14 Matsushita Electric Ind Co Ltd Insulator target for sputtering device
JPS5633476A (en) * 1979-08-21 1981-04-03 Siemens Ag Fixing of target material

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6447864A (en) * 1987-08-17 1989-02-22 Seiko Epson Corp Method for joining sputtering target
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
WO2004065046A3 (en) * 2003-01-22 2004-09-30 Tosoh Smd Inc Brittle material sputtering target assembly and method of making same
EP2390537A4 (en) * 2009-01-23 2014-08-13 Toyota Motor Co Ltd Sealed structure
CN102292576A (en) * 2009-01-23 2011-12-21 丰田自动车株式会社 Sealed structure
JP5278443B2 (en) * 2009-01-23 2013-09-04 トヨタ自動車株式会社 Seal structure
WO2010084597A1 (en) * 2009-01-23 2010-07-29 トヨタ自動車株式会社 Sealed structure
EP2390537A1 (en) * 2009-01-23 2011-11-30 Toyota Jidosha Kabushiki Kaisha Sealed structure
JP2013529253A (en) * 2010-05-21 2013-07-18 ユミコア エセ．アー． Non-continuous bonding of sputtering target to backing material
US9831073B2 (en) 2012-02-14 2017-11-28 Tosoh Smd, Inc. Low deflection sputtering target assembly and methods of making same
JP2015132013A (en) * 2013-12-13 2015-07-23 Jx日鉱日石金属株式会社 Sputtering target and production method thereof
JP2017145459A (en) * 2016-02-17 2017-08-24 三菱マテリアル株式会社 Sputtering target
JP2017203666A (en) * 2016-05-10 2017-11-16 株式会社アルバック Manufacturing method of moisture detecting element, manufacturing method of water disintegrating wiring film, manufacturing method of water disintegrating thin film, and moisture detecting element
CN107617825A (en) * 2016-07-14 2018-01-23 宁波江丰电子材料股份有限公司 The manufacture method of nickel target material assembly
CN108067723A (en) * 2016-11-18 2018-05-25 宁波江丰电子材料股份有限公司 The manufacturing method of target material assembly
CN107971620A (en) * 2017-11-29 2018-05-01 宁波江丰电子材料股份有限公司 A kind of tungsten target material diffusion welding method and target material assembly
CN108247190A (en) * 2018-01-18 2018-07-06 宁波江丰电子材料股份有限公司 Tungsten target material diffusion welding structure and tungsten target material diffusion welding method

Also Published As

Publication number Publication date
JPS645112B2 (en) 1989-01-27

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