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JPS57170585A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57170585A
JPS57170585A JP5588181A JP5588181A JPS57170585A JP S57170585 A JPS57170585 A JP S57170585A JP 5588181 A JP5588181 A JP 5588181A JP 5588181 A JP5588181 A JP 5588181A JP S57170585 A JPS57170585 A JP S57170585A
Authority
JP
Japan
Prior art keywords
laser
oscillation
thickness
mode
lambda
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5588181A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5588181A priority Critical patent/JPS57170585A/en
Publication of JPS57170585A publication Critical patent/JPS57170585A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a laser having a single oscillation axis mode by disposing in a multilayer a material having band gap energy larger than the oscillation wavelength lambda on the emitting end surface or its vicinity of a semiconductor laser and deciding the thickness of the layer of i-th from the oscillation mode interval and refractive index. CONSTITUTION:An InP 2 having a thickness of approx. 50mum is placed on the vicinity of the one emitting end of a laser 1 having 1.3mum band of the oscillation wavelength of InGaAsP. The substrate 2 is transparent material for 1.3mum band of laser and operates as a Fabry-Pe rotetalon plate, and the reflectivity repeatedly varies at an interval of DELTAlambda=lambda<2>/2nd with respect to the using wavelength where refractive index is n and the thickness is d. Accordingly, the axial mode interval of the laser is select at DELTAlambda, and the thickness of the plate 2 is selected at d<lambda<2>/2nd, then, the reflectivity difference of the respective oscillation axial mode can be provided. According to this structure, a laser in which the oscillation axial mode is less even at the time of high speed modulation in the single oscillation axial mode and an optimum light source for a large capacity long distance can be obtained.
JP5588181A 1981-04-14 1981-04-14 Semiconductor laser device Pending JPS57170585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5588181A JPS57170585A (en) 1981-04-14 1981-04-14 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5588181A JPS57170585A (en) 1981-04-14 1981-04-14 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57170585A true JPS57170585A (en) 1982-10-20

Family

ID=13011432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5588181A Pending JPS57170585A (en) 1981-04-14 1981-04-14 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57170585A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010687A (en) * 1983-06-29 1985-01-19 Matsushita Electric Ind Co Ltd Semiconductor laser device
US5022037A (en) * 1989-03-13 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
US5180685A (en) * 1990-04-02 1993-01-19 Sharp Kabushiki Kaisha Method for the production of a semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010687A (en) * 1983-06-29 1985-01-19 Matsushita Electric Ind Co Ltd Semiconductor laser device
US5022037A (en) * 1989-03-13 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
US5180685A (en) * 1990-04-02 1993-01-19 Sharp Kabushiki Kaisha Method for the production of a semiconductor laser device

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