JPS57170585A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS57170585A JPS57170585A JP5588181A JP5588181A JPS57170585A JP S57170585 A JPS57170585 A JP S57170585A JP 5588181 A JP5588181 A JP 5588181A JP 5588181 A JP5588181 A JP 5588181A JP S57170585 A JPS57170585 A JP S57170585A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- oscillation
- thickness
- mode
- lambda
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a laser having a single oscillation axis mode by disposing in a multilayer a material having band gap energy larger than the oscillation wavelength lambda on the emitting end surface or its vicinity of a semiconductor laser and deciding the thickness of the layer of i-th from the oscillation mode interval and refractive index. CONSTITUTION:An InP 2 having a thickness of approx. 50mum is placed on the vicinity of the one emitting end of a laser 1 having 1.3mum band of the oscillation wavelength of InGaAsP. The substrate 2 is transparent material for 1.3mum band of laser and operates as a Fabry-Pe rotetalon plate, and the reflectivity repeatedly varies at an interval of DELTAlambda=lambda<2>/2nd with respect to the using wavelength where refractive index is n and the thickness is d. Accordingly, the axial mode interval of the laser is select at DELTAlambda, and the thickness of the plate 2 is selected at d<lambda<2>/2nd, then, the reflectivity difference of the respective oscillation axial mode can be provided. According to this structure, a laser in which the oscillation axial mode is less even at the time of high speed modulation in the single oscillation axial mode and an optimum light source for a large capacity long distance can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5588181A JPS57170585A (en) | 1981-04-14 | 1981-04-14 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5588181A JPS57170585A (en) | 1981-04-14 | 1981-04-14 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57170585A true JPS57170585A (en) | 1982-10-20 |
Family
ID=13011432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5588181A Pending JPS57170585A (en) | 1981-04-14 | 1981-04-14 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170585A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010687A (en) * | 1983-06-29 | 1985-01-19 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| US5022037A (en) * | 1989-03-13 | 1991-06-04 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| US5180685A (en) * | 1990-04-02 | 1993-01-19 | Sharp Kabushiki Kaisha | Method for the production of a semiconductor laser device |
-
1981
- 1981-04-14 JP JP5588181A patent/JPS57170585A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010687A (en) * | 1983-06-29 | 1985-01-19 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| US5022037A (en) * | 1989-03-13 | 1991-06-04 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| US5180685A (en) * | 1990-04-02 | 1993-01-19 | Sharp Kabushiki Kaisha | Method for the production of a semiconductor laser device |
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