JPS5716170A - Etching method of etching anisotropic wafer - Google Patents

Abstract

PURPOSE: To remove etching residue without deteriorating mechanical strength of a wafer by etching an etching anisotropic wafer in such a manner that a metal plate or an inorg. plate having a shape almost equal to a desired shape to be formed is adhered on said wafer.

CONSTITUTION: When the etching anisotropic wafer 1' is treated by a conventional wafer etching process, in an etching place shown by arrows a, b, an etching speed is fast in a left side surface and a straight surface is formed but, because, in a righthand side surface an etching speed is slow, etching residue 5 is generated. Then, on a metal film 2 of the etching anisotropic wafer 1" having the etching residue 5, a metal or an ionrg. mask 7 is applied by using an adhesive 10. The mask has a shape almost equal to an objective etching shape. Next, the mask applied wafer is immersed in an etching liquid 8 in an etching tank 9 to remove the residue 5. The film 2 is not deteriorated because not directly contacted with said liquid and, therefore, mechanical strength of the wafer 1" is not deteriorated.

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