JPS57155764A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57155764A JPS57155764A JP56041328A JP4132881A JPS57155764A JP S57155764 A JPS57155764 A JP S57155764A JP 56041328 A JP56041328 A JP 56041328A JP 4132881 A JP4132881 A JP 4132881A JP S57155764 A JPS57155764 A JP S57155764A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- layer
- single crystal
- opened
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain a single-crystallized nucleus, by laser irradiation of the polysilicon over the second layer from a single crystal column inside an opened window with the hole part opened on the SiO2 film on a single crystal silicon constantly kept opened. CONSTITUTION:The SiO2 film 2 is formed with the hole 3 on the single crystal silicon substrate, and the whole surface is adhered with the first layer of silicon with the laser beam irradiation from the hole 3 to be single-crystallized to form the first LSI layer 4. Next, the upper part on a layer insulating film 9 is opened to a hole 3' to form a polysilicon layer. When laser irradiation is started from the hole 3', a single crystal silicon is formed in the hole 3 like a column to the crystalline nucleus of polysilicon. The hole 3 may be formed on a scribed line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56041328A JPS57155764A (en) | 1981-03-20 | 1981-03-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56041328A JPS57155764A (en) | 1981-03-20 | 1981-03-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155764A true JPS57155764A (en) | 1982-09-25 |
| JPS6342417B2 JPS6342417B2 (en) | 1988-08-23 |
Family
ID=12605445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56041328A Granted JPS57155764A (en) | 1981-03-20 | 1981-03-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155764A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853822A (en) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | Laminated semiconductor device |
| JPS5892211A (en) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5996761A (en) * | 1982-11-25 | 1984-06-04 | Mitsubishi Electric Corp | Multi-stage semiconductor device |
| JPS6074553A (en) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US5849077A (en) * | 1994-04-11 | 1998-12-15 | Texas Instruments Incorporated | Process for growing epitaxial silicon in the windows of an oxide-patterned wafer |
| JP2013505578A (en) * | 2009-09-16 | 2013-02-14 | アプライド マテリアルズ インコーポレイテッド | A method for solid-phase recrystallization of thin films using pulse train annealing. |
-
1981
- 1981-03-20 JP JP56041328A patent/JPS57155764A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853822A (en) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | Laminated semiconductor device |
| JPS5892211A (en) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5996761A (en) * | 1982-11-25 | 1984-06-04 | Mitsubishi Electric Corp | Multi-stage semiconductor device |
| JPS6074553A (en) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US5849077A (en) * | 1994-04-11 | 1998-12-15 | Texas Instruments Incorporated | Process for growing epitaxial silicon in the windows of an oxide-patterned wafer |
| JP2013505578A (en) * | 2009-09-16 | 2013-02-14 | アプライド マテリアルズ インコーポレイテッド | A method for solid-phase recrystallization of thin films using pulse train annealing. |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6342417B2 (en) | 1988-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0342796A3 (en) | Thin-film transistor | |
| EP0251767A3 (en) | Insulated gate type semiconductor device and method of producing the same | |
| JPS5674921A (en) | Manufacturing method of semiconductor and apparatus thereof | |
| JPS5638815A (en) | Manufacture of semiconductor device | |
| JPS5673697A (en) | Manufacture of single crystal thin film | |
| JPS57155764A (en) | Manufacture of semiconductor device | |
| JPS57155726A (en) | Manufacture of semiconductor device | |
| JPS54161894A (en) | Manufacture of semiconductor device | |
| JPS5688317A (en) | Manufacture of semiconductor device | |
| JPS5678155A (en) | Semiconductor device and manufacture thereof | |
| JPS575328A (en) | Growing method for semiconductor crystal | |
| JPS5247673A (en) | Process for production of silicon crystal film | |
| JPS6425515A (en) | Manufacture of semiconductor device | |
| JPS6448410A (en) | Manufacture of semiconductor device | |
| JPS6459807A (en) | Material for thin-film transistor | |
| KR930000227B1 (en) | Manufacturing method of soi using sog (spin-on-glass) | |
| JPS57210624A (en) | Manufacture of semiconductor device | |
| JPS5768049A (en) | Semiconductor device and manufacture thereof | |
| JPS56111239A (en) | Preparation of semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS53129981A (en) | Production of semiconductor device | |
| JPS5543847A (en) | Forming method of multilayer interconnection | |
| JPS56135972A (en) | Manufacture of semiconductor device | |
| JPS577926A (en) | Manufacture of semiconductor device | |
| JPS5461490A (en) | Multi-layer wiring forming method in semiconductor device |