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JPS57130358A - Full automatic ion implantation device - Google Patents

Full automatic ion implantation device

Info

Publication number
JPS57130358A
JPS57130358A JP1501881A JP1501881A JPS57130358A JP S57130358 A JPS57130358 A JP S57130358A JP 1501881 A JP1501881 A JP 1501881A JP 1501881 A JP1501881 A JP 1501881A JP S57130358 A JPS57130358 A JP S57130358A
Authority
JP
Japan
Prior art keywords
implantation
ion beam
ion implantation
control computer
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1501881A
Other languages
Japanese (ja)
Other versions
JPH0234151B2 (en
Inventor
Michiyuki Harada
Masayasu Miyake
Yoichi Egami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1501881A priority Critical patent/JPS57130358A/en
Publication of JPS57130358A publication Critical patent/JPS57130358A/en
Publication of JPH0234151B2 publication Critical patent/JPH0234151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To implant ions automatically by using a computer for operations such as generation of plasma, extraction of an ion beam, mass analysis of ions, setting of acceleration voltage, and ion implantation in a specimen. CONSTITUTION:An acceleration power supply 50 is set at a predetermined value by a control computer 20 through a beam line controller 43. After mass analysis, an ion beam is accelerated to a predetermined value by an accelerator 49, is emitted into a beam line section 40, and is focused to an optimum condition by a lens electrode 41. Then, the ion beam is scanned electrostatically by a scanner 42 controlled by the control computer 20. The ion beam injected into an end station 44 is illuminated on an inserted specimen 46, and the ion implantation is continued until a predetermined quantity of implantation is reached. Setting of the implantation quantity and monitoring of the current value are conducted through measurement by a dosimeter 48 and control by the control computer 20.
JP1501881A 1981-02-05 1981-02-05 Full automatic ion implantation device Granted JPS57130358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1501881A JPS57130358A (en) 1981-02-05 1981-02-05 Full automatic ion implantation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1501881A JPS57130358A (en) 1981-02-05 1981-02-05 Full automatic ion implantation device

Publications (2)

Publication Number Publication Date
JPS57130358A true JPS57130358A (en) 1982-08-12
JPH0234151B2 JPH0234151B2 (en) 1990-08-01

Family

ID=11877118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1501881A Granted JPS57130358A (en) 1981-02-05 1981-02-05 Full automatic ion implantation device

Country Status (1)

Country Link
JP (1) JPS57130358A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107246A (en) * 1983-08-15 1985-06-12 アプライド　マテリアルズ　インコ−ポレ−テツド Ion source device
JPS60232656A (en) * 1984-04-28 1985-11-19 Nissin Electric Co Ltd Ion implanting equipment
JPS62108440A (en) * 1985-11-06 1987-05-19 Hitachi Ltd Fine machining device
JPS62117247A (en) * 1985-11-18 1987-05-28 Tokyo Electron Ltd Ion implantation system
JPS62142151U (en) * 1986-03-03 1987-09-08
JPS63146337A (en) * 1986-12-08 1988-06-18 Fuji Electric Co Ltd Ion beam device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507797U (en) * 1973-05-21 1975-01-27
JPS5021673A (en) * 1973-05-23 1975-03-07
JPS5569370U (en) * 1978-11-08 1980-05-13
JPS5569950A (en) * 1978-11-20 1980-05-27 Mitsubishi Electric Corp Control method of analytical magnet and its device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507797U (en) * 1973-05-21 1975-01-27
JPS5021673A (en) * 1973-05-23 1975-03-07
JPS5569370U (en) * 1978-11-08 1980-05-13
JPS5569950A (en) * 1978-11-20 1980-05-27 Mitsubishi Electric Corp Control method of analytical magnet and its device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107246A (en) * 1983-08-15 1985-06-12 アプライド　マテリアルズ　インコ−ポレ−テツド Ion source device
JPH0531259B2 (en) * 1983-08-15 1993-05-12 Applied Materials Inc
JPS60232656A (en) * 1984-04-28 1985-11-19 Nissin Electric Co Ltd Ion implanting equipment
JPS62108440A (en) * 1985-11-06 1987-05-19 Hitachi Ltd Fine machining device
JPS62117247A (en) * 1985-11-18 1987-05-28 Tokyo Electron Ltd Ion implantation system
JPS62142151U (en) * 1986-03-03 1987-09-08
JPS63146337A (en) * 1986-12-08 1988-06-18 Fuji Electric Co Ltd Ion beam device

Also Published As

Publication number Publication date
JPH0234151B2 (en) 1990-08-01

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