JPS57112083A - Manufacture of avalanche photodiode - Google Patents
Manufacture of avalanche photodiodeInfo
- Publication number
- JPS57112083A JPS57112083A JP55187344A JP18734480A JPS57112083A JP S57112083 A JPS57112083 A JP S57112083A JP 55187344 A JP55187344 A JP 55187344A JP 18734480 A JP18734480 A JP 18734480A JP S57112083 A JPS57112083 A JP S57112083A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- diffused
- circumference
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain high multiplication factor by a method wherein Cd is diffused in a photodetector region to make an abrupt PN-junction and Zn is diffused in its circumference to make a linear grade PN-junction. CONSTITUTION:A n-type activated layer 2 of InGaAsP and a n-type multiplication layer 3 of InP are formed successively on a n-type substrate 1 of ImP. Then Cd is diffused n a photodetector region by thermal diffusion and a photodetector P<+> layer 5 is formed. Then Zn is diffused around the layer 5 by thermal diffusion in such a manner that it contacts the layer 5 and its depth is less than that of the layer 5 and a guard ring P<+> diffused layer 6 is formed. With above process, a P-N-junction is obtained in the circumference of the layer 5 but, as the layer 5 has abrupt junction and on the other hand the layer 6 has linear grade junction, the electric field concentration is not generted in the circumference and breakdown occurs only in the photodetector region. Moreover the n-type impurity density of the layer 3 is low enough to keep the noise level very low and the dark current very little.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187344A JPS57112083A (en) | 1980-12-29 | 1980-12-29 | Manufacture of avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55187344A JPS57112083A (en) | 1980-12-29 | 1980-12-29 | Manufacture of avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57112083A true JPS57112083A (en) | 1982-07-12 |
Family
ID=16204347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55187344A Pending JPS57112083A (en) | 1980-12-29 | 1980-12-29 | Manufacture of avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112083A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992386A (en) * | 1988-12-14 | 1991-02-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor light detector |
-
1980
- 1980-12-29 JP JP55187344A patent/JPS57112083A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992386A (en) * | 1988-12-14 | 1991-02-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor light detector |
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