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JPS57112083A - Manufacture of avalanche photodiode - Google Patents

Manufacture of avalanche photodiode

Info

Publication number
JPS57112083A
JPS57112083A JP55187344A JP18734480A JPS57112083A JP S57112083 A JPS57112083 A JP S57112083A JP 55187344 A JP55187344 A JP 55187344A JP 18734480 A JP18734480 A JP 18734480A JP S57112083 A JPS57112083 A JP S57112083A
Authority
JP
Japan
Prior art keywords
layer
junction
diffused
circumference
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55187344A
Other languages
Japanese (ja)
Inventor
Tatsuaki Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187344A priority Critical patent/JPS57112083A/en
Publication of JPS57112083A publication Critical patent/JPS57112083A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain high multiplication factor by a method wherein Cd is diffused in a photodetector region to make an abrupt PN-junction and Zn is diffused in its circumference to make a linear grade PN-junction. CONSTITUTION:A n-type activated layer 2 of InGaAsP and a n-type multiplication layer 3 of InP are formed successively on a n-type substrate 1 of ImP. Then Cd is diffused n a photodetector region by thermal diffusion and a photodetector P<+> layer 5 is formed. Then Zn is diffused around the layer 5 by thermal diffusion in such a manner that it contacts the layer 5 and its depth is less than that of the layer 5 and a guard ring P<+> diffused layer 6 is formed. With above process, a P-N-junction is obtained in the circumference of the layer 5 but, as the layer 5 has abrupt junction and on the other hand the layer 6 has linear grade junction, the electric field concentration is not generted in the circumference and breakdown occurs only in the photodetector region. Moreover the n-type impurity density of the layer 3 is low enough to keep the noise level very low and the dark current very little.
JP55187344A 1980-12-29 1980-12-29 Manufacture of avalanche photodiode Pending JPS57112083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187344A JPS57112083A (en) 1980-12-29 1980-12-29 Manufacture of avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187344A JPS57112083A (en) 1980-12-29 1980-12-29 Manufacture of avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS57112083A true JPS57112083A (en) 1982-07-12

Family

ID=16204347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187344A Pending JPS57112083A (en) 1980-12-29 1980-12-29 Manufacture of avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS57112083A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector

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