Nothing Special   »   [go: up one dir, main page]

JPS57112085A - Photocoupler - Google Patents

Photocoupler

Info

Publication number
JPS57112085A
JPS57112085A JP18730980A JP18730980A JPS57112085A JP S57112085 A JPS57112085 A JP S57112085A JP 18730980 A JP18730980 A JP 18730980A JP 18730980 A JP18730980 A JP 18730980A JP S57112085 A JPS57112085 A JP S57112085A
Authority
JP
Japan
Prior art keywords
led1
light
plane
radiates
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18730980A
Other languages
Japanese (ja)
Inventor
Osamu Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18730980A priority Critical patent/JPS57112085A/en
Publication of JPS57112085A publication Critical patent/JPS57112085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain high speed response characteristics by using a semiconductor luminescent element which radiates the light parallel to the junction plane. CONSTITUTION:A Cu block 4 is gold-plated and soldered on a header 5. The bottom of a Si photodiode 2 is welded to the block 4. An LED1 is insulated by a beryllia sub-mount 6 and the light from the LED1 is radiated to the photodetector 3' on the diode 2. This LED1 radiates the light parallel to the junction plane. However, the consideration is taken as not to make a resonater by methods such as roughening the cleavage plane or forming the plane where the light is taken out by etching. With above method, this device does not have oscillation but generates induction emission easily, so that high speed response characteristics are obtained.
JP18730980A 1980-12-29 1980-12-29 Photocoupler Pending JPS57112085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18730980A JPS57112085A (en) 1980-12-29 1980-12-29 Photocoupler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18730980A JPS57112085A (en) 1980-12-29 1980-12-29 Photocoupler

Publications (1)

Publication Number Publication Date
JPS57112085A true JPS57112085A (en) 1982-07-12

Family

ID=16203737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18730980A Pending JPS57112085A (en) 1980-12-29 1980-12-29 Photocoupler

Country Status (1)

Country Link
JP (1) JPS57112085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193082A (en) * 1983-04-15 1984-11-01 Hitachi Ltd Light emitting semiconductor device and manufacture thereof
JPS6074539A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Submount for optical semiconductor element
JPS63164255U (en) * 1988-03-30 1988-10-26

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193082A (en) * 1983-04-15 1984-11-01 Hitachi Ltd Light emitting semiconductor device and manufacture thereof
JPH0514434B2 (en) * 1983-04-15 1993-02-25 Hitachi Ltd
JPS6074539A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Submount for optical semiconductor element
JPS63164255U (en) * 1988-03-30 1988-10-26

Similar Documents

Publication Publication Date Title
JPS577989A (en) Mount for semiconductor laser
JPS57112085A (en) Photocoupler
JPS5784189A (en) Hybrid integrated optical circuit
JPS5598880A (en) Light transmitting/receiving semiconductor device
JPS5642388A (en) Semiconductor light emitting device
JPS57198420A (en) Coupling structure between photoelectric conversion element and fiber
JPS57106091A (en) Semiconductor laser device
JPS5792881A (en) Semiconductor light emitting element
JPS5329090A (en) Semiconductor photo coupler
JPS5574190A (en) Photoelectro-converting semiconductor device
JPS5780788A (en) Laser device
JPS52135282A (en) Semiconductor light emitting device
JPS53144695A (en) Semiconductor laser device
JPS57149780A (en) Photo transmission circuit and photo semiconductor
JPS5768087A (en) Photocoupling semiconductor device
JPS57178387A (en) Indicator for luminescence and its manufacture
JPS57103373A (en) Light emitting diode and preparation thereof
JPS57193080A (en) Plane light emission type high intensity light emitting diode
JPS5858824B2 (en) Optical coupling semiconductor device
Polakov Thermal Resistance of(Al, Ga) As Strip Heterostructure Lasers
JPS5345252A (en) Light coupler for semi-conductor laser
JPS5591889A (en) Manufacture of light-emission element
JPS5258492A (en) Semiconductor light emitting device
Lauer Optimization and Characterization of High-Radiance(Al, Ga) As Double-Heterostructure LED's for Optical Communication Systems
JPS5249788A (en) Process for production of semiconductor light coupling device