JPS5664337A - Radiation resist material and radiation resist pattern forming method - Google Patents
Radiation resist material and radiation resist pattern forming methodInfo
- Publication number
- JPS5664337A JPS5664337A JP14022679A JP14022679A JPS5664337A JP S5664337 A JPS5664337 A JP S5664337A JP 14022679 A JP14022679 A JP 14022679A JP 14022679 A JP14022679 A JP 14022679A JP S5664337 A JPS5664337 A JP S5664337A
- Authority
- JP
- Japan
- Prior art keywords
- radiation resist
- forming method
- pattern forming
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
PURPOSE: To obtain a super minute pattern of high resolution and sensitivity with high reproducibility by applying a copolymer of methacrylic acid and methyl methacrylate to a substrate and irradiating it after heat treatment.
CONSTITUTION: A copolymer consisting of 95W85mol% methyl methacrylate and 5W15mol% methacrylic acid and having 30,000W100,000wt. average mol.wt. is dissolved in a solvent such as methyl cellosolve acetate, and this soln. is applied to a substrate to form a film. This film is then heat treated, irradiated to form a predetermined latent image, and developed by dipping in a developer such as methyl ethyl ketone or ethyl acetate. Thus, a resist sectional form having a vertical wall surface can be obtd. with high resolution (0.3W0.8μ), high sensitivity (7×10-6W 3×10-5C/cm2) and high reproducibility.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14022679A JPS5664337A (en) | 1979-10-29 | 1979-10-29 | Radiation resist material and radiation resist pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14022679A JPS5664337A (en) | 1979-10-29 | 1979-10-29 | Radiation resist material and radiation resist pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5664337A true JPS5664337A (en) | 1981-06-01 |
Family
ID=15263833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14022679A Pending JPS5664337A (en) | 1979-10-29 | 1979-10-29 | Radiation resist material and radiation resist pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664337A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58116532A (en) * | 1981-12-29 | 1983-07-11 | Fujitsu Ltd | Pattern formation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526203A (en) * | 1975-06-30 | 1977-01-18 | Ibm | Method of forming positive resist image |
| JPS54133322A (en) * | 1978-04-07 | 1979-10-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Positive type ionizing radiation sensitive resist |
-
1979
- 1979-10-29 JP JP14022679A patent/JPS5664337A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526203A (en) * | 1975-06-30 | 1977-01-18 | Ibm | Method of forming positive resist image |
| JPS54133322A (en) * | 1978-04-07 | 1979-10-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Positive type ionizing radiation sensitive resist |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58116532A (en) * | 1981-12-29 | 1983-07-11 | Fujitsu Ltd | Pattern formation |
| JPH0262859B2 (en) * | 1981-12-29 | 1990-12-26 | Fujitsu Ltd |
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