JPS5649159U - - Google Patents
Info
- Publication number
- JPS5649159U JPS5649159U JP1980115223U JP11522380U JPS5649159U JP S5649159 U JPS5649159 U JP S5649159U JP 1980115223 U JP1980115223 U JP 1980115223U JP 11522380 U JP11522380 U JP 11522380U JP S5649159 U JPS5649159 U JP S5649159U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7601843,A NL176322C (nl) | 1976-02-24 | 1976-02-24 | Halfgeleiderinrichting met beveiligingsschakeling. |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5649159U true JPS5649159U (ja) | 1981-05-01 |
Family
ID=19825672
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1825077A Pending JPS52102689A (en) | 1976-02-24 | 1977-02-23 | Semiconductor device having safety circuit |
JP1980115223U Pending JPS5649159U (ja) | 1976-02-24 | 1980-08-15 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1825077A Pending JPS52102689A (en) | 1976-02-24 | 1977-02-23 | Semiconductor device having safety circuit |
Country Status (11)
Country | Link |
---|---|
US (1) | US4131908A (ja) |
JP (2) | JPS52102689A (ja) |
AU (1) | AU506552B2 (ja) |
CA (1) | CA1078072A (ja) |
CH (1) | CH612794A5 (ja) |
DE (1) | DE2707744A1 (ja) |
FR (1) | FR2342557A1 (ja) |
GB (1) | GB1571343A (ja) |
IT (1) | IT1074324B (ja) |
NL (1) | NL176322C (ja) |
SE (1) | SE411815B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139349A (ja) * | 1985-12-13 | 1987-06-23 | Rohm Co Ltd | 半導体装置の保護回路 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4264857A (en) * | 1978-06-30 | 1981-04-28 | International Business Machines Corporation | Constant voltage threshold device |
US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
JPS5580350A (en) * | 1978-12-13 | 1980-06-17 | Fujitsu Ltd | Semiconductor integrated circuit |
JPS55102268A (en) * | 1979-01-31 | 1980-08-05 | Toshiba Corp | Protecting circuit for semiconductor device |
US4264941A (en) * | 1979-02-14 | 1981-04-28 | National Semiconductor Corporation | Protective circuit for insulated gate field effect transistor integrated circuits |
US4235011A (en) * | 1979-03-28 | 1980-11-25 | Honeywell Inc. | Semiconductor apparatus |
JPS5679463A (en) * | 1979-12-03 | 1981-06-30 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPS5696851A (en) * | 1979-12-27 | 1981-08-05 | Fujitsu Ltd | Static breakdown preventive element |
JPS577151A (en) * | 1980-06-17 | 1982-01-14 | Nec Corp | Monolithic ic circuit |
US4302792A (en) * | 1980-06-26 | 1981-11-24 | Rca Corporation | Transistor protection circuit |
JPS5737876A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Semiconductor integrated circuit apparatus |
JPS5756960A (en) * | 1980-09-22 | 1982-04-05 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS5778178A (en) * | 1980-11-04 | 1982-05-15 | Toshiba Corp | Input protective circuit |
JPS5780774A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device |
IT1150062B (it) * | 1980-11-19 | 1986-12-10 | Ates Componenti Elettron | Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione |
NL8100347A (nl) * | 1981-01-26 | 1982-08-16 | Philips Nv | Halfgeleiderinrichting met een beveiligingsinrichting. |
US4602267A (en) * | 1981-02-17 | 1986-07-22 | Fujitsu Limited | Protection element for semiconductor device |
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
JPS58119670A (ja) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | 半導体装置 |
JPS58182441U (ja) * | 1982-05-28 | 1983-12-05 | 三洋電機株式会社 | 半導体集積回路 |
JPS5948951A (ja) * | 1982-09-14 | 1984-03-21 | Toshiba Corp | 半導体保護装置 |
JPS5992557A (ja) * | 1982-11-18 | 1984-05-28 | Nec Corp | 入力保護回路付半導体集積回路 |
JPS59181679A (ja) * | 1983-03-31 | 1984-10-16 | Nippon Denso Co Ltd | 半導体装置 |
JPS60767A (ja) * | 1983-06-17 | 1985-01-05 | Hitachi Ltd | 半導体装置 |
JPS6068721A (ja) * | 1983-09-22 | 1985-04-19 | Fujitsu Ltd | Ecl回路 |
JPS60117653A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体集積回路装置 |
JPH0646662B2 (ja) * | 1983-12-26 | 1994-06-15 | 株式会社日立製作所 | 半導体装置 |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
SE455552B (sv) * | 1985-02-26 | 1988-07-18 | Asea Ab | Halvledaranordning innefattande en overspenningsskyddskrets |
JPS6252966A (ja) * | 1985-09-02 | 1987-03-07 | Toshiba Corp | 半導体装置の製造方法 |
JPH0666402B2 (ja) * | 1985-12-12 | 1994-08-24 | 三菱電機株式会社 | 半導体集積回路装置の入力保護回路 |
US4760433A (en) * | 1986-01-31 | 1988-07-26 | Harris Corporation | ESD protection transistors |
DE3618166A1 (de) * | 1986-05-30 | 1987-12-03 | Telefunken Electronic Gmbh | Lateraltransistor |
US4987465A (en) * | 1987-01-29 | 1991-01-22 | Advanced Micro Devices, Inc. | Electro-static discharge protection device for CMOS integrated circuit inputs |
US4784966A (en) * | 1987-06-02 | 1988-11-15 | Texas Instruments Incorporated | Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology |
US5005066A (en) * | 1987-06-02 | 1991-04-02 | Texas Instruments Incorporated | Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology |
JPH0719879B2 (ja) * | 1988-06-24 | 1995-03-06 | 日本電気株式会社 | 半導体集積回路装置 |
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
ES2055795T3 (es) * | 1988-11-22 | 1994-09-01 | At & T Corp | Separador de salida de circuito integrado que tiene proteccion de esd mejorada. |
JPH061802B2 (ja) * | 1989-03-14 | 1994-01-05 | 株式会社東芝 | 半導体装置 |
US5345103A (en) * | 1989-07-18 | 1994-09-06 | Seiko Instruments Inc. | Gate controlled avalanche bipolar transistor |
JPH0821840B2 (ja) * | 1989-12-07 | 1996-03-04 | 富士電機株式会社 | パワー半導体装置のスナバ回路 |
US5212618A (en) * | 1990-05-03 | 1993-05-18 | Linear Technology Corporation | Electrostatic discharge clamp using vertical NPN transistor |
EP0517391A1 (en) * | 1991-06-05 | 1992-12-09 | STMicroelectronics, Inc. | ESD protection circuit |
JP3019760B2 (ja) * | 1995-11-15 | 2000-03-13 | 日本電気株式会社 | 半導体集積回路装置 |
US6784747B1 (en) | 2003-03-20 | 2004-08-31 | Analog Devices, Inc. | Amplifier circuit |
US6816015B2 (en) | 2003-03-27 | 2004-11-09 | Analog Devices, Inc. | Amplifier circuit having a plurality of first and second base resistors |
FR2918504B1 (fr) * | 2007-07-06 | 2009-11-27 | St Microelectronics Sa | Resistance integree diffusee |
FR3119493B1 (fr) * | 2021-01-29 | 2024-11-22 | St Microelectronics Rousset | Dispositif de protection contre les décharges électrostatiques |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4864455A (ja) * | 1971-12-09 | 1973-09-06 | Ibm |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3764864A (en) * | 1966-03-29 | 1973-10-09 | Matsushita Electronics Corp | Insulated-gate field-effect transistor with punch-through effect element |
US3573571A (en) * | 1967-10-13 | 1971-04-06 | Gen Electric | Surface-diffused transistor with isolated field plate |
US3918080A (en) * | 1968-06-21 | 1975-11-04 | Philips Corp | Multiemitter transistor with continuous ballast resistor |
US3651565A (en) * | 1968-09-09 | 1972-03-28 | Nat Semiconductor Corp | Lateral transistor structure and method of making the same |
DE2015815B2 (de) * | 1969-04-21 | 1976-06-24 | Rca Corp., New York, N.Y. (V.St.A.) | Schutzschaltung fuer einen integrierten schaltkreis |
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
US3636385A (en) * | 1970-02-13 | 1972-01-18 | Ncr Co | Protection circuit |
US3628070A (en) * | 1970-04-22 | 1971-12-14 | Rca Corp | Voltage reference and voltage level sensing circuit |
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
JPS4818055U (ja) * | 1971-07-09 | 1973-03-01 | ||
US3821780A (en) * | 1972-10-24 | 1974-06-28 | Gen Motors Corp | Double mesa transistor with integral bleeder resistors |
GB1405503A (en) * | 1972-11-16 | 1975-09-10 | Texas Instruments Inc | Integrated circuits |
US3829709A (en) * | 1973-08-31 | 1974-08-13 | Micro Components Corp | Supply reversal protecton circuit |
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
-
1976
- 1976-02-24 NL NLAANVRAGE7601843,A patent/NL176322C/xx not_active IP Right Cessation
-
1977
- 1977-02-10 US US05/767,569 patent/US4131908A/en not_active Expired - Lifetime
- 1977-02-18 CA CA272,106A patent/CA1078072A/en not_active Expired
- 1977-02-21 AU AU22505/77A patent/AU506552B2/en not_active Expired
- 1977-02-21 SE SE7701884A patent/SE411815B/xx not_active IP Right Cessation
- 1977-02-21 GB GB7181/77A patent/GB1571343A/en not_active Expired
- 1977-02-21 IT IT20500/77A patent/IT1074324B/it active
- 1977-02-21 CH CH215277A patent/CH612794A5/xx not_active IP Right Cessation
- 1977-02-22 FR FR7705033A patent/FR2342557A1/fr active Granted
- 1977-02-23 DE DE19772707744 patent/DE2707744A1/de active Granted
- 1977-02-23 JP JP1825077A patent/JPS52102689A/ja active Pending
-
1980
- 1980-08-15 JP JP1980115223U patent/JPS5649159U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4864455A (ja) * | 1971-12-09 | 1973-09-06 | Ibm |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139349A (ja) * | 1985-12-13 | 1987-06-23 | Rohm Co Ltd | 半導体装置の保護回路 |
Also Published As
Publication number | Publication date |
---|---|
NL176322C (nl) | 1985-03-18 |
FR2342557B1 (ja) | 1983-07-08 |
GB1571343A (en) | 1980-07-16 |
NL176322B (nl) | 1984-10-16 |
US4131908A (en) | 1978-12-26 |
AU506552B2 (en) | 1980-01-10 |
CA1078072A (en) | 1980-05-20 |
CH612794A5 (ja) | 1979-08-15 |
SE7701884L (sv) | 1977-08-25 |
SE411815B (sv) | 1980-02-04 |
JPS52102689A (en) | 1977-08-29 |
AU2250577A (en) | 1978-08-31 |
DE2707744A1 (de) | 1977-09-01 |
NL7601843A (nl) | 1977-08-26 |
IT1074324B (it) | 1985-04-20 |
FR2342557A1 (fr) | 1977-09-23 |
DE2707744C2 (ja) | 1990-03-01 |