JPS5649580A - Preparation of semiconductor infrared-ray detecting element - Google Patents
Preparation of semiconductor infrared-ray detecting elementInfo
- Publication number
- JPS5649580A JPS5649580A JP12592479A JP12592479A JPS5649580A JP S5649580 A JPS5649580 A JP S5649580A JP 12592479 A JP12592479 A JP 12592479A JP 12592479 A JP12592479 A JP 12592479A JP S5649580 A JPS5649580 A JP S5649580A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- detecting element
- ray detecting
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000010276 construction Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a high response speed infrared-ray detecting element by a construction wherein the capacity and sheet resistivity of an Hg1-XCdXTe P-N junction are lowered so that most of the photons are absorbed in a P type crystal layer. CONSTITUTION:An N type Hg1-XCdXTe 1 is heated to extract Hg and to make a P type substrate 2. Then ZnS 3 is deposited on the substrate and an opening is made in the layer 3 to diffuse Hg. An N layer 4 is formed by filling up the empty grid of the substrate 2 to selectively form a P-N junction 5. In addition, an N<+> layer 6 is formed by injecting B ions in order to obtain a double layer. With such a construction as this, the sheet resistivity of the P type substrate is lowered because of the N<+> layer 6, while the junction capacity is made smaller because a depletion layer is provided in the P-N junction. If the double layer consisting the layers 4-6 is allowed to have a thickness of about 3mum, infrared-ray photons to be injected can be fallen on the P layer which is almost nearly fast as carrier transferring, so that a high response speed infrared-ray detecting element can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12592479A JPS5649580A (en) | 1979-09-28 | 1979-09-28 | Preparation of semiconductor infrared-ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12592479A JPS5649580A (en) | 1979-09-28 | 1979-09-28 | Preparation of semiconductor infrared-ray detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649580A true JPS5649580A (en) | 1981-05-06 |
| JPS6161552B2 JPS6161552B2 (en) | 1986-12-26 |
Family
ID=14922313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12592479A Granted JPS5649580A (en) | 1979-09-28 | 1979-09-28 | Preparation of semiconductor infrared-ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649580A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6316022U (en) * | 1986-07-17 | 1988-02-02 | ||
| JPH0936411A (en) * | 1995-07-17 | 1997-02-07 | Nec Corp | Fabrication of infrared detector |
-
1979
- 1979-09-28 JP JP12592479A patent/JPS5649580A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6316022U (en) * | 1986-07-17 | 1988-02-02 | ||
| JPH039701Y2 (en) * | 1986-07-17 | 1991-03-11 | ||
| JPH0936411A (en) * | 1995-07-17 | 1997-02-07 | Nec Corp | Fabrication of infrared detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161552B2 (en) | 1986-12-26 |
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