Nothing Special   »   [go: up one dir, main page]

JPS5624925A - Selective growth of silicon - Google Patents

Selective growth of silicon

Info

Publication number
JPS5624925A
JPS5624925A JP10027279A JP10027279A JPS5624925A JP S5624925 A JPS5624925 A JP S5624925A JP 10027279 A JP10027279 A JP 10027279A JP 10027279 A JP10027279 A JP 10027279A JP S5624925 A JPS5624925 A JP S5624925A
Authority
JP
Japan
Prior art keywords
film
growth
substrate
layer
growth layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10027279A
Other languages
Japanese (ja)
Other versions
JPS6226569B2 (en
Inventor
Masao Kawamura
Hiroji Saida
Akira Sato
Masahiko Kogirima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10027279A priority Critical patent/JPS5624925A/en
Publication of JPS5624925A publication Critical patent/JPS5624925A/en
Publication of JPS6226569B2 publication Critical patent/JPS6226569B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain an Si growth layer of which the grains of Si are fine only on the SiN film and the boundary face of growth-nongrowth is flat when the Si growth layer is made to grow on a substrate coexisting an SiN film with an SiO2 film by a method wherein the temperature of growth and the quantity of Si source to be contained in the carrier gas are specified. CONSTITUTION:An SiO2 film 2 and an SiN film 3 are stacked and adhered on an Si substrate 1, and an appointed part of the film 3 is removed by etching to expose the film 2 at this point. The substrate 1 is arranged in a growth system, and a polycrystalline Si layer 4 is made to grow on the substrate 1 using hydrogen as the carrier gas and dichlorosilane as the Si source. At this time, when the temprature of the substrate 1 is kept at 800-900 deg.C and the quantity of dichlorosilane to be contained in hydrogen is kept at 0.05-0.10mol%, the polycrystalline Si layer 4 grows only on the film 3. By this way, as the grains of crystal in the growth layer 4 is fine and the surface becomes flat, the control of characteristic of the device using this growth layer becomes very easy.
JP10027279A 1979-08-08 1979-08-08 Selective growth of silicon Granted JPS5624925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10027279A JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10027279A JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Publications (2)

Publication Number Publication Date
JPS5624925A true JPS5624925A (en) 1981-03-10
JPS6226569B2 JPS6226569B2 (en) 1987-06-09

Family

ID=14269561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10027279A Granted JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Country Status (1)

Country Link
JP (1) JPS5624925A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605846A (en) * 1994-02-23 1997-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5653802A (en) * 1988-03-27 1997-08-05 Canon Kabushiki Kaisha Method for forming crystal
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6984550B2 (en) 2001-02-28 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012069964A (en) * 2005-09-12 2012-04-05 Internatl Business Mach Corp <Ibm> Structure and method for selective deposition of germanium spacers on nitride

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5853478A (en) * 1986-03-28 1998-12-29 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5653802A (en) * 1988-03-27 1997-08-05 Canon Kabushiki Kaisha Method for forming crystal
US5605846A (en) * 1994-02-23 1997-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film
US7749819B2 (en) 1994-02-23 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6984550B2 (en) 2001-02-28 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7405115B2 (en) 2001-02-28 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9330940B2 (en) 2001-02-28 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012069964A (en) * 2005-09-12 2012-04-05 Internatl Business Mach Corp <Ibm> Structure and method for selective deposition of germanium spacers on nitride

Also Published As

Publication number Publication date
JPS6226569B2 (en) 1987-06-09

Similar Documents

Publication Publication Date Title
JPS6432622A (en) Formation of soi film
JPS5624925A (en) Selective growth of silicon
JPS54157779A (en) Production of silicon single crystal
JPS56160400A (en) Growing method for gallium nitride
JPS577923A (en) Manufacture of receiving table for processing single silicon crystal wafer
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS5687339A (en) Manufacture of semiconductor device
EP0147471A1 (en) Method of manufacturing semiconductor device
JPS5649520A (en) Vapor growth of compound semiconductor
JPS57159017A (en) Manufacture of semiconductor single crystal film
FR2437699A1 (en) Solar cell silicon semiconductor - has ceramic substrate coated with coarse grained or monocrystalline silicon and then with epitaxial layer of silicon
JPS57194520A (en) Manufacture of semiconductor device
JPS55149193A (en) Manufacture of silicon carbide substrate
JPS5379384A (en) Forming method of polycrystalline gaas thin film and stabilizing method ofsemiconductor of semiconductor
JPS5555520A (en) Method of controlling thickness of film
JPS6428374A (en) Method for selectively growing tungsten
JPS57194519A (en) Method of crystal growth
JPS53144690A (en) Production of semiconductor device
JPS6481308A (en) Formation of semiconductor thin film
JPS5283164A (en) Production of thin film semiconductor substrate
JPS52114268A (en) Selective liquid growing method
JPS6414926A (en) Manufacture of semiconductor device
JPS5365300A (en) Method of growing single crystal epitaxial layer on substrate and basic holder used in this method
JPS6411321A (en) Manufacture of silicon single-crystal thin film
JPS51111057A (en) Crystal growing device