JPS56150823A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56150823A JPS56150823A JP5471680A JP5471680A JPS56150823A JP S56150823 A JPS56150823 A JP S56150823A JP 5471680 A JP5471680 A JP 5471680A JP 5471680 A JP5471680 A JP 5471680A JP S56150823 A JPS56150823 A JP S56150823A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glass layer
- diffusion
- impurity
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 5
- 239000011521 glass Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 235000019353 potassium silicate Nutrition 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent the semiconductor device from influence of humidity by a method wherein after a liquid glass layer containing the desired impurity is formed on a semiconductor substrate, a diffusion treatment process is performed in accordance with the lumping method. CONSTITUTION:An SiO2 film having the prescribed opening is formed on the surface of the P type Si substrate 1, and the liquid glass layer 3 containing the N type impurity is adhered on the substrate thereof. Then in a diffusion furnace regulated preliminary at the temperature lower than the diffusion temperature, the Si substrate 1 adhered with the glass layer 3 is inserted and is arranged to heat preliminary the substrate 1 and to remove the solvent in the glass layer 3. After then the temperature of furnace is made at the prescribed diffusion temperature to form the diffusion treatment of impurity from the glass layer 3 to the substrate 1. The impurity concentration of an N<+> type layer 4 obtained by this way is not affected by the storage method and the storage time after the formation of the glass layer 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5471680A JPS589580B2 (en) | 1980-04-24 | 1980-04-24 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5471680A JPS589580B2 (en) | 1980-04-24 | 1980-04-24 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56150823A true JPS56150823A (en) | 1981-11-21 |
| JPS589580B2 JPS589580B2 (en) | 1983-02-22 |
Family
ID=12978522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5471680A Expired JPS589580B2 (en) | 1980-04-24 | 1980-04-24 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589580B2 (en) |
-
1980
- 1980-04-24 JP JP5471680A patent/JPS589580B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS589580B2 (en) | 1983-02-22 |
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