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JPS56140351A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56140351A
JPS56140351A JP4418280A JP4418280A JPS56140351A JP S56140351 A JPS56140351 A JP S56140351A JP 4418280 A JP4418280 A JP 4418280A JP 4418280 A JP4418280 A JP 4418280A JP S56140351 A JPS56140351 A JP S56140351A
Authority
JP
Japan
Prior art keywords
layer
resist
polyimide
substrate
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4418280A
Other languages
Japanese (ja)
Inventor
Minoru Nakajima
Shiro Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4418280A priority Critical patent/JPS56140351A/en
Publication of JPS56140351A publication Critical patent/JPS56140351A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To accurately form a fine pattern by laying a polyimide layer on a substrate, masking the layer with a resist, and pattering the layer with gaseous plasma contg. a fluorocarbon compound. CONSTITUTION:Polyimide layer 2 is laid on Al or Si substrate 1, and on layer 2 resist layer 3 is formed with a commercially available resist in a thickness corresponding to about 1/3 of the thickness of layer 2. Using layer 3 as a mask disclosed part (a) of layer 2 is etched with plasma of a gaseous fluorocarbon compound such as CF4 contg. O2. Since the etching speed of polyimede layer 2 is 3-4 times as high as that of resist layer 3, layer 2 is etched selectively. Layer 3 is then removed to accurately obtain a polyimide pattern with disclosed substrate 1. Using this polyimide film an insulating layer, etc. for a semiconductor devices, etc. are obtd. with high resolution.
JP4418280A 1980-04-04 1980-04-04 Formation of pattern Pending JPS56140351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4418280A JPS56140351A (en) 1980-04-04 1980-04-04 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4418280A JPS56140351A (en) 1980-04-04 1980-04-04 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS56140351A true JPS56140351A (en) 1981-11-02

Family

ID=12684425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4418280A Pending JPS56140351A (en) 1980-04-04 1980-04-04 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS56140351A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785828A (en) * 1980-11-18 1982-05-28 Sumitomo Electric Ind Ltd Etching of polyimide resin
JPS58147033A (en) * 1982-02-26 1983-09-01 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPS611171A (en) * 1984-06-14 1986-01-07 Canon Inc Color picture processor
JPS61231720A (en) * 1985-04-01 1986-10-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Plasma etching of substrate
JPS63501186A (en) * 1985-10-25 1988-04-28 タンデム　コンピユ−タ−ズ　インコ−ポレ−テツド Method for forming vertical connections in polyimide insulation layers

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785828A (en) * 1980-11-18 1982-05-28 Sumitomo Electric Ind Ltd Etching of polyimide resin
JPS58147033A (en) * 1982-02-26 1983-09-01 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPH0234453B2 (en) * 1982-02-26 1990-08-03 Nippon Telegraph & Telephone
JPS611171A (en) * 1984-06-14 1986-01-07 Canon Inc Color picture processor
JPS61231720A (en) * 1985-04-01 1986-10-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Plasma etching of substrate
JPS63501186A (en) * 1985-10-25 1988-04-28 タンデム　コンピユ−タ−ズ　インコ−ポレ−テツド Method for forming vertical connections in polyimide insulation layers

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