JPS56148874A - Semiconductor photoelectric converter - Google Patents
Semiconductor photoelectric converterInfo
- Publication number
- JPS56148874A JPS56148874A JP5250880A JP5250880A JPS56148874A JP S56148874 A JPS56148874 A JP S56148874A JP 5250880 A JP5250880 A JP 5250880A JP 5250880 A JP5250880 A JP 5250880A JP S56148874 A JPS56148874 A JP S56148874A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- type amorphous
- silicon layer
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 230000001902 propagating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To effectively utilize incident light by arranging a plurality of junctions forming photoelectric converting regions along the incident light propagating direction and operating the junctions in parallel. CONSTITUTION:An N type amorphous silicon layer 2b, an i type amorphous silicon layer 3b, a P type amorphous silicon layer 4b, a transparent conductive layer 5, a P type amorphous silicon 4a, an i type amorphous silicon layer 3a and an N type amorphous silicon layer 2a are sequentially formed on a substrate electrode 1b. A surface electrode 1a is adhered onto the surface of the layer 2a. The electrode 1a is connected to the electrode 1b by a lead wire, and two photoelectric converting regions a, b operate in parallel at both sides of the transparent conductive film 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5250880A JPS56148874A (en) | 1980-04-18 | 1980-04-18 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5250880A JPS56148874A (en) | 1980-04-18 | 1980-04-18 | Semiconductor photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56148874A true JPS56148874A (en) | 1981-11-18 |
Family
ID=12916665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5250880A Pending JPS56148874A (en) | 1980-04-18 | 1980-04-18 | Semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56148874A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132481A (en) * | 1984-07-24 | 1986-02-15 | Sharp Corp | Amorphous semiconductor element |
| US4948436A (en) * | 1988-02-05 | 1990-08-14 | Siemens Aktiengesellschaft | Thin-film solar cell arrangement |
| US5071490A (en) * | 1988-03-18 | 1991-12-10 | Sharp Kabushiki Kaisha | Tandem stacked amorphous solar cell device |
| EP2375455A1 (en) * | 2010-04-09 | 2011-10-12 | S.O.I.Tec Silicon on Insulator Technologies | Voltage matched multijunction solar cell |
| JP2016219704A (en) * | 2015-05-25 | 2016-12-22 | 日産自動車株式会社 | Photoelectric conversion device |
-
1980
- 1980-04-18 JP JP5250880A patent/JPS56148874A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132481A (en) * | 1984-07-24 | 1986-02-15 | Sharp Corp | Amorphous semiconductor element |
| US4948436A (en) * | 1988-02-05 | 1990-08-14 | Siemens Aktiengesellschaft | Thin-film solar cell arrangement |
| US5071490A (en) * | 1988-03-18 | 1991-12-10 | Sharp Kabushiki Kaisha | Tandem stacked amorphous solar cell device |
| EP2375455A1 (en) * | 2010-04-09 | 2011-10-12 | S.O.I.Tec Silicon on Insulator Technologies | Voltage matched multijunction solar cell |
| WO2011124321A3 (en) * | 2010-04-09 | 2012-05-31 | Soitec | Voltage matched multijunction solar cell |
| US10714644B2 (en) | 2010-04-09 | 2020-07-14 | Saint-Augustin Canada Electric Inc. | Voltage matched multijunction solar cell |
| US11482633B2 (en) | 2010-04-09 | 2022-10-25 | Saint-Augustin Canada Electric Inc. | Voltage matched multijunction solar cell |
| JP2016219704A (en) * | 2015-05-25 | 2016-12-22 | 日産自動車株式会社 | Photoelectric conversion device |
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