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JPS56126914A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56126914A
JPS56126914A JP3062380A JP3062380A JPS56126914A JP S56126914 A JPS56126914 A JP S56126914A JP 3062380 A JP3062380 A JP 3062380A JP 3062380 A JP3062380 A JP 3062380A JP S56126914 A JPS56126914 A JP S56126914A
Authority
JP
Japan
Prior art keywords
layer
substrate
monocrystal
poly
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3062380A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3062380A priority Critical patent/JPS56126914A/en
Priority to US06/240,130 priority patent/US4381201A/en
Priority to DE8181101579T priority patent/DE3168424D1/en
Priority to EP81101579A priority patent/EP0036137B1/en
Publication of JPS56126914A publication Critical patent/JPS56126914A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a monocrystal layer with no defective crystal by a method wherein a polycrystal or an amorphous semiconductor layer on a substrate is thermally oxidized selectively, and annealed by lasers or electron rays. CONSTITUTION:An Si substrate is coated with a thermal oxide film, and a poly Si layer is gaseous phase-grown. The Si layer is coated with an Si3N4 mask using an extremely thin SiO2 film as the foundation, the surface is thermally oxidized selectively and a field oxide film is formed. The Si3N4 mask is removed, laser beams are irradiated and poly Si is changed into a monocrystal. According to this constitution, since a monocrystal layer is not thermally treated for a long time at a high temperature, the generation of defects is few, and the same crystallinity as an epitaxial layer on the moncrystal substrate is obtained.
JP3062380A 1980-03-11 1980-03-11 Manufacture of semiconductor device Pending JPS56126914A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3062380A JPS56126914A (en) 1980-03-11 1980-03-11 Manufacture of semiconductor device
US06/240,130 US4381201A (en) 1980-03-11 1981-03-03 Method for production of semiconductor devices
DE8181101579T DE3168424D1 (en) 1980-03-11 1981-03-05 Method for production of semiconductor devices
EP81101579A EP0036137B1 (en) 1980-03-11 1981-03-05 Method for production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3062380A JPS56126914A (en) 1980-03-11 1980-03-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56126914A true JPS56126914A (en) 1981-10-05

Family

ID=12308978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3062380A Pending JPS56126914A (en) 1980-03-11 1980-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56126914A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728342A (en) * 1980-06-23 1982-02-16 Texas Instruments Inc Method of forming insular semiconductor region
JPS58180019A (en) * 1982-04-15 1983-10-21 Matsushita Electric Ind Co Ltd Semiconductor base body and its manufacture
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
US4498951A (en) * 1981-10-09 1985-02-12 Hitachi, Ltd. Method of manufacturing single-crystal film
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4543133A (en) * 1983-04-30 1985-09-24 Fujitsu Limited Process for producing single crystalline semiconductor island on insulator
JPS63114266A (en) * 1986-10-31 1988-05-19 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4843423A (en) * 1971-10-04 1973-06-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4843423A (en) * 1971-10-04 1973-06-23

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728342A (en) * 1980-06-23 1982-02-16 Texas Instruments Inc Method of forming insular semiconductor region
JPH0468770B2 (en) * 1980-06-23 1992-11-04 Texas Instruments Inc
US4498951A (en) * 1981-10-09 1985-02-12 Hitachi, Ltd. Method of manufacturing single-crystal film
JPS58180019A (en) * 1982-04-15 1983-10-21 Matsushita Electric Ind Co Ltd Semiconductor base body and its manufacture
JPH0413848B2 (en) * 1982-04-15 1992-03-11 Matsushita Electric Ind Co Ltd
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4543133A (en) * 1983-04-30 1985-09-24 Fujitsu Limited Process for producing single crystalline semiconductor island on insulator
JPS63114266A (en) * 1986-10-31 1988-05-19 Fujitsu Ltd Manufacture of semiconductor device
JPH0529149B2 (en) * 1986-10-31 1993-04-28 Fujitsu Ltd

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