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JPS5593236A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5593236A
JPS5593236A JP148979A JP148979A JPS5593236A JP S5593236 A JPS5593236 A JP S5593236A JP 148979 A JP148979 A JP 148979A JP 148979 A JP148979 A JP 148979A JP S5593236 A JPS5593236 A JP S5593236A
Authority
JP
Japan
Prior art keywords
film
electrode
layer
mosi
policrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP148979A
Other languages
Japanese (ja)
Inventor
Mitsunao Chiba
Toru Mochizuki
Takanari Tsujimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP148979A priority Critical patent/JPS5593236A/en
Publication of JPS5593236A publication Critical patent/JPS5593236A/en
Pending legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain an excellent ohmic electrode by a method wherein the r-doped prlicrystalline Si, the IVB groop metal and the high melting point metal or its silicon compound are sequentially laminated and the generation of friction and crack after the heat treatment is prevented.
CONSTITUTION: An opening 4 is made in the thin oxidized film 3 on the p-type Si substrate 1 and the p-type doped policrystalline film 5, the Hf film 6 coated by vaporization and MoSi2 film 7 are laminated thereupon. Next thereto, the film 5W7 are selectively etched with the CF4-O2 groop gas plasma and the rare fluoric acid solvent to form the three layer structure gate electrode 8 and the source incoming electrode 9. When the electrode 8, 9 are made a mask and the film 3 is removed, and when an P is diffused and the n+-layer 10, 11 is formed, then, P is diffused from the film 5 and the thin n+-layer is formed adjacent to the layer 10. Next thereto, it is covered with the insulating film 12 and an opening is made thereupon to form the Al electrode 13. In this electrode constitution, the specific resistance becomes very small depending upon MoSi2 and the circuit high speed operation is permitted. Furthermore, the tightness between policrystalline Si and MoSi2 is improved through the Hf layer, friction or crack is not generated and an satisfactory ohmic connection is installed, thus an excellent electrode is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP148979A 1979-01-10 1979-01-10 Semiconductor device Pending JPS5593236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP148979A JPS5593236A (en) 1979-01-10 1979-01-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP148979A JPS5593236A (en) 1979-01-10 1979-01-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5593236A true JPS5593236A (en) 1980-07-15

Family

ID=11502850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP148979A Pending JPS5593236A (en) 1979-01-10 1979-01-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593236A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686759A (en) * 1983-09-23 1987-08-18 U.S. Philips Corporation Method of manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686759A (en) * 1983-09-23 1987-08-18 U.S. Philips Corporation Method of manufacturing a semiconductor device

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