JPS5568678A - Junction type field effect transistor - Google Patents
Junction type field effect transistorInfo
- Publication number
- JPS5568678A JPS5568678A JP14297678A JP14297678A JPS5568678A JP S5568678 A JPS5568678 A JP S5568678A JP 14297678 A JP14297678 A JP 14297678A JP 14297678 A JP14297678 A JP 14297678A JP S5568678 A JPS5568678 A JP S5568678A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- regions
- layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To provide a junction type field effect transistor (J-FET) having pentode vacuum tube characteristics of preferable saturation property by growing an epitaxial layer on a semiconductor substrate becoming a drain region and providing a lower gate region at the bottom thereof and upper gate and source regions on the surface layer thereof.
CONSTITUTION: An n-type layer is epitaxially grown on an n+-type semiconductor substrate 4 becoming a drain region, and a plurality of p-type buried gate regions 1-1∼1-4 are formed in the bottom region thereof. An upper P+-type gate region 2 is formed on the surface layer of the n-type epitaxial layer while disposing it among the regions 1-1∼1-4, and n+-type source regions 3-1∼3-4 are formed in the n-type epitaxial layer surrounded by the region 2. Thus, a depletion layer among the upper gate region 2 and the lower gate regions 1-1∼1-4 can be expanded or contracted to thereby provide a J-FET having pentode vacuum tube characteristics.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14297678A JPS5568678A (en) | 1978-11-20 | 1978-11-20 | Junction type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14297678A JPS5568678A (en) | 1978-11-20 | 1978-11-20 | Junction type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5568678A true JPS5568678A (en) | 1980-05-23 |
Family
ID=15328024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14297678A Pending JPS5568678A (en) | 1978-11-20 | 1978-11-20 | Junction type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5568678A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4454523A (en) * | 1981-03-30 | 1984-06-12 | Siliconix Incorporated | High voltage field effect transistor |
| JPS60224279A (en) * | 1984-04-20 | 1985-11-08 | Agency Of Ind Science & Technol | Transistor |
| CN104183645A (en) * | 2013-05-27 | 2014-12-03 | 瑞萨电子株式会社 | Vertical-channel type junction sic power fet and method of manufacturing same |
-
1978
- 1978-11-20 JP JP14297678A patent/JPS5568678A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4454523A (en) * | 1981-03-30 | 1984-06-12 | Siliconix Incorporated | High voltage field effect transistor |
| JPS60224279A (en) * | 1984-04-20 | 1985-11-08 | Agency Of Ind Science & Technol | Transistor |
| CN104183645A (en) * | 2013-05-27 | 2014-12-03 | 瑞萨电子株式会社 | Vertical-channel type junction sic power fet and method of manufacturing same |
| JP2014229859A (en) * | 2013-05-27 | 2014-12-08 | ルネサスエレクトロニクス株式会社 | VERTICAL CHANNEL JUNCTION SiC POWER FET AND METHOD FOR MANUFACTURING THE SAME |
| US9691908B2 (en) | 2013-05-27 | 2017-06-27 | Renesas Electronics Corporation | Vertical-channel type junction SiC power FET and method of manufacturing same |
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