JPS5552219A - Semiconductor wafer - Google Patents
Semiconductor waferInfo
- Publication number
- JPS5552219A JPS5552219A JP12591678A JP12591678A JPS5552219A JP S5552219 A JPS5552219 A JP S5552219A JP 12591678 A JP12591678 A JP 12591678A JP 12591678 A JP12591678 A JP 12591678A JP S5552219 A JPS5552219 A JP S5552219A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- resistance
- base plate
- continuously
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve interfacial characteristics of an active layer by making epitaxial growth of a buffer layer, a No.1 electric conductive type thin-and-low-comparative-resistance semiconductor layer and a No.2 electric conductive type semiconductor layer, continuously, on a high-resistance crystal base plate.
CONSTITUTION: A buffer layer 2 having a comparative resistance of 1014 Ωcm and a thickness of 5μ is formed on a Cr dope semi-insulating GaAs base plate 1 by introduction of Fe and an epitaxial growth, and a p-type layer 3 having a carrier concentration of 5×1015cm-3 and a thickness of 0.3μ is made to grow continuously on this buffer layer by switching only impurity into Zn, etc. Fe doping is to be completed during formation of the p-type layer and it is not extended to a next n-type layer. And since the p-type layer is thin, it becomes an adequate high-resistance layer, and leak current can be prevented. And then, an n-type active layer 4 having a carrier concentration of 1.5×1017cm-3 is to continuously grow. There is very little influence of the p-type impurity onto the active layer. This is also applicable to an insulator having a base plate of saphire, etc.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12591678A JPS5552219A (en) | 1978-10-13 | 1978-10-13 | Semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12591678A JPS5552219A (en) | 1978-10-13 | 1978-10-13 | Semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5552219A true JPS5552219A (en) | 1980-04-16 |
Family
ID=14922095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12591678A Pending JPS5552219A (en) | 1978-10-13 | 1978-10-13 | Semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5552219A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5959665U (en) * | 1982-10-12 | 1984-04-18 | ナイルス部品株式会社 | cigarette lighter |
| JPS62219590A (en) * | 1986-03-19 | 1987-09-26 | Nec Corp | Integrated element of photo semiconductor and its manufacture |
| KR100408324B1 (en) * | 1998-03-25 | 2003-12-06 | 랜디 엘. 쉬마부쿠로 | Ultra-high resolution liquid crystal display on silicon-on-sapphire |
-
1978
- 1978-10-13 JP JP12591678A patent/JPS5552219A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5959665U (en) * | 1982-10-12 | 1984-04-18 | ナイルス部品株式会社 | cigarette lighter |
| JPS62219590A (en) * | 1986-03-19 | 1987-09-26 | Nec Corp | Integrated element of photo semiconductor and its manufacture |
| KR100408324B1 (en) * | 1998-03-25 | 2003-12-06 | 랜디 엘. 쉬마부쿠로 | Ultra-high resolution liquid crystal display on silicon-on-sapphire |
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