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JPS5527471A - Oxide film forming method for granular silicon for flux - Google Patents

Oxide film forming method for granular silicon for flux

Info

Publication number
JPS5527471A
JPS5527471A JP10101678A JP10101678A JPS5527471A JP S5527471 A JPS5527471 A JP S5527471A JP 10101678 A JP10101678 A JP 10101678A JP 10101678 A JP10101678 A JP 10101678A JP S5527471 A JPS5527471 A JP S5527471A
Authority
JP
Japan
Prior art keywords
granular
granular material
hopper
silicon
peroxide solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10101678A
Other languages
Japanese (ja)
Other versions
JPS605525B2 (en
Inventor
Kazuto Atsuta
Ichiro Togashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KINSEI KOGYO KK
Original Assignee
KINSEI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KINSEI KOGYO KK filed Critical KINSEI KOGYO KK
Priority to JP53101016A priority Critical patent/JPS605525B2/en
Publication of JPS5527471A publication Critical patent/JPS5527471A/en
Publication of JPS605525B2 publication Critical patent/JPS605525B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)

Abstract

PURPOSE:To manufacture the product of uniform particle size being uniformly coated with the oxide film at a high productivity, by stirring and heating the kneaded material consisting of granular silicon as the base material and the peroxide solution, and after that, by further heating to higher temperatures. CONSTITUTION:The granular metallic silicon or silicon alloy and the peroxide solution at a specified proportion are charged into the mixer and are thoroughly kneaded; hereby, the peroxide solution is uniformly applied to the surface of the granular silicon. This granular material is discharged from the mixer, and is stored in the hopper, and then, is supplied from this hopper to the external combustion type rotary drier continuously. Within the rotary drier, the granular material is heated to about 400 deg.C while being stirred, and is mutually unbound from other pieces; as a result, the deposit of peroxide is formed on the surface of granular material. This granular material is continuously discharged from the drier and is stored in the hopper; from this hopper, the granular material is continuously charged into the rotary kiln. The granular material is heated to about 800 deg.C in the rotary kiln, and is taken out as the product, being followed by the cooling.
JP53101016A 1978-08-18 1978-08-18 Method for forming oxide film on silicon powder for welding agent Expired JPS605525B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53101016A JPS605525B2 (en) 1978-08-18 1978-08-18 Method for forming oxide film on silicon powder for welding agent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53101016A JPS605525B2 (en) 1978-08-18 1978-08-18 Method for forming oxide film on silicon powder for welding agent

Publications (2)

Publication Number Publication Date
JPS5527471A true JPS5527471A (en) 1980-02-27
JPS605525B2 JPS605525B2 (en) 1985-02-12

Family

ID=14289407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53101016A Expired JPS605525B2 (en) 1978-08-18 1978-08-18 Method for forming oxide film on silicon powder for welding agent

Country Status (1)

Country Link
JP (1) JPS605525B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232201A (en) * 1983-06-15 1984-12-27 Kobe Steel Ltd Surface treatment of fe-si powder and granule for welding flux
JP2006088455A (en) * 2004-09-22 2006-04-06 Haruo Okahara Silicon processing water-soluble cutting agent composition and processing method
JP2009182180A (en) * 2008-01-31 2009-08-13 Tkx:Kk Method of manufacturing semiconductor wafer, and semiconductor wafer
JP2010247255A (en) * 2009-04-13 2010-11-04 Nippon Steel Corp Oxidation suppression method for silicon cutting powder, and oxidation suppression device for silicon cutting powder
JP2011206795A (en) * 2010-03-29 2011-10-20 Nippon Steel & Sumikin Welding Co Ltd Fe-Si ALLOY POWDER FOR COVERED ELECTRODE AND LOW-HYDROGEN TYPE COVERED ELECTRODE FOR BACK-BEAD WELDING

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232201A (en) * 1983-06-15 1984-12-27 Kobe Steel Ltd Surface treatment of fe-si powder and granule for welding flux
JP2006088455A (en) * 2004-09-22 2006-04-06 Haruo Okahara Silicon processing water-soluble cutting agent composition and processing method
JP4493454B2 (en) * 2004-09-22 2010-06-30 株式会社カサタニ Water-soluble cutting agent composition for silicon processing and processing method
JP2009182180A (en) * 2008-01-31 2009-08-13 Tkx:Kk Method of manufacturing semiconductor wafer, and semiconductor wafer
JP2010247255A (en) * 2009-04-13 2010-11-04 Nippon Steel Corp Oxidation suppression method for silicon cutting powder, and oxidation suppression device for silicon cutting powder
JP2011206795A (en) * 2010-03-29 2011-10-20 Nippon Steel & Sumikin Welding Co Ltd Fe-Si ALLOY POWDER FOR COVERED ELECTRODE AND LOW-HYDROGEN TYPE COVERED ELECTRODE FOR BACK-BEAD WELDING

Also Published As

Publication number Publication date
JPS605525B2 (en) 1985-02-12

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