JPS5526548A - Display - Google Patents
DisplayInfo
- Publication number
- JPS5526548A JPS5526548A JP9950978A JP9950978A JPS5526548A JP S5526548 A JPS5526548 A JP S5526548A JP 9950978 A JP9950978 A JP 9950978A JP 9950978 A JP9950978 A JP 9950978A JP S5526548 A JPS5526548 A JP S5526548A
- Authority
- JP
- Japan
- Prior art keywords
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9950978A JPS5526548A (en) | 1978-08-17 | 1978-08-17 | Display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9950978A JPS5526548A (en) | 1978-08-17 | 1978-08-17 | Display |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5526548A true JPS5526548A (en) | 1980-02-26 |
Family
ID=14249222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9950978A Pending JPS5526548A (en) | 1978-08-17 | 1978-08-17 | Display |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5526548A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745086A (en) * | 1985-09-26 | 1988-05-17 | Motorola, Inc. | Removable sidewall spacer for lightly doped drain formation using one mask level and differential oxidation |
-
1978
- 1978-08-17 JP JP9950978A patent/JPS5526548A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745086A (en) * | 1985-09-26 | 1988-05-17 | Motorola, Inc. | Removable sidewall spacer for lightly doped drain formation using one mask level and differential oxidation |
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