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JPS5525801A - Charge transfer type delay circuit - Google Patents

Charge transfer type delay circuit

Info

Publication number
JPS5525801A
JPS5525801A JP9582078A JP9582078A JPS5525801A JP S5525801 A JPS5525801 A JP S5525801A JP 9582078 A JP9582078 A JP 9582078A JP 9582078 A JP9582078 A JP 9582078A JP S5525801 A JPS5525801 A JP S5525801A
Authority
JP
Japan
Prior art keywords
charge
electrode
signal
increment
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9582078A
Other languages
Japanese (ja)
Other versions
JPS6129166B2 (en
Inventor
Kenro Sakagami
Tetsuya Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9582078A priority Critical patent/JPS5525801A/en
Publication of JPS5525801A publication Critical patent/JPS5525801A/en
Publication of JPS6129166B2 publication Critical patent/JPS6129166B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE: To increase the signal detection sensitivity at the output step by removing part of the DC component among the signal charge and thus reducing the increment of the transfer electrode area which is caused by the increment of the delay step number.
CONSTITUTION: Among the signal charge stored at time t1 under delay charge transfer electrode 40 composed of the charge coupling element and the like, the charge which can get over the channel potential barrier under electrode 41 to which voltage Vref is applied at time t2 is transferred under electrode 44. And the rest charge stays under electrode 40. In this case, if voltage Vref is set previously so that the charge which can get over the potential barrier may correspond to the AC component of the signal, only the AC part is transferred. And the gate of electrode 42 is opened at time t2 to throw away the charge corresponding to the DC part from drain 43, thus completing one cycle. As a result, the increment is reduced for the transfer electrode area, thus increasing the signal detection sensitivity at the output step.
COPYRIGHT: (C)1980,JPO&Japio
JP9582078A 1978-08-08 1978-08-08 Charge transfer type delay circuit Granted JPS5525801A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9582078A JPS5525801A (en) 1978-08-08 1978-08-08 Charge transfer type delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9582078A JPS5525801A (en) 1978-08-08 1978-08-08 Charge transfer type delay circuit

Publications (2)

Publication Number Publication Date
JPS5525801A true JPS5525801A (en) 1980-02-23
JPS6129166B2 JPS6129166B2 (en) 1986-07-04

Family

ID=14148040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9582078A Granted JPS5525801A (en) 1978-08-08 1978-08-08 Charge transfer type delay circuit

Country Status (1)

Country Link
JP (1) JPS5525801A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091922A (en) * 1988-06-30 1992-02-25 Nec Corporation Charge transfer device type solid state image sensor having constant saturation level

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091922A (en) * 1988-06-30 1992-02-25 Nec Corporation Charge transfer device type solid state image sensor having constant saturation level

Also Published As

Publication number Publication date
JPS6129166B2 (en) 1986-07-04

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