JPS55157739A - X-ray exposure mask - Google Patents
X-ray exposure maskInfo
- Publication number
- JPS55157739A JPS55157739A JP6658479A JP6658479A JPS55157739A JP S55157739 A JPS55157739 A JP S55157739A JP 6658479 A JP6658479 A JP 6658479A JP 6658479 A JP6658479 A JP 6658479A JP S55157739 A JPS55157739 A JP S55157739A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- supporting
- thence
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prevent the occurrence of warpage and distortion of the X-ray exposure mask through pulling to each other of the reinforcing support beams formed by silicon single crystal and the transfer pattern supporting layers of the mask by removing the regions which contribute little to supporting of the said supporting layers. CONSTITUTION:After SiO2 layers 2, 2' are formed on the surfaces of a silicon single crystal substrate 1 through the thermal oxidation of the said surfaces, an Si3N4 film 3 is formed on one film 2. With the resist pattern as a protecting film, part of the film 3 is removed by plasma etching, thence the whole of the film 2' and part 4 of the film 2 are removed by buffer hydrofluoric acid. An Si3N4 film 5, SiO2 film 6, Si3N4 film 7 are formed respectively subsequently on the surface of the substrate 1 having been removed of the film 2'. Next, a resist film 8 is formed on the film 7 surface in opposition to openings 4. Thence, a resist film 9 is formed on the other surface of the substrate 1, after which with the film 8 as a protecting film, part of the film 7 is etched to form the film 7', following to which the films 6, are removed to form films 6', 5', thence the film 8 is removed. Next, transfer patterns 10 of Au, etc. are formed on the film 7', after which the openings 4 of the substrate 1 are etched away. In this way, the unnecessary portions of the pattern supporting layer on the supporting beams 1' are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6658479A JPS55157739A (en) | 1979-05-29 | 1979-05-29 | X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6658479A JPS55157739A (en) | 1979-05-29 | 1979-05-29 | X-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55157739A true JPS55157739A (en) | 1980-12-08 |
| JPS641926B2 JPS641926B2 (en) | 1989-01-13 |
Family
ID=13320139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6658479A Granted JPS55157739A (en) | 1979-05-29 | 1979-05-29 | X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55157739A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60122944A (en) * | 1983-11-02 | 1985-07-01 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Manufacture of mask for making pattern |
| JPS6249623A (en) * | 1985-07-19 | 1987-03-04 | Nec Corp | X-ray exposure mask |
| JPH0194347A (en) * | 1987-09-03 | 1989-04-13 | Philips Gloeilampenfab:Nv | Manufacture of mask for radiation lithography |
| JP2015062212A (en) * | 2013-09-23 | 2015-04-02 | ナショナル シンクロトロン ラディエイション リサーチ センターＮａｔｉｏｎａｌ Ｓｙｎｃｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ | X-ray mask structure and manufacturing method therefor |
-
1979
- 1979-05-29 JP JP6658479A patent/JPS55157739A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60122944A (en) * | 1983-11-02 | 1985-07-01 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Manufacture of mask for making pattern |
| JPH0430737B2 (en) * | 1983-11-02 | 1992-05-22 | ||
| JPS6249623A (en) * | 1985-07-19 | 1987-03-04 | Nec Corp | X-ray exposure mask |
| JPH0194347A (en) * | 1987-09-03 | 1989-04-13 | Philips Gloeilampenfab:Nv | Manufacture of mask for radiation lithography |
| JP2015062212A (en) * | 2013-09-23 | 2015-04-02 | ナショナル シンクロトロン ラディエイション リサーチ センターＮａｔｉｏｎａｌ Ｓｙｎｃｈｒｏｔｒｏｎ Ｒａｄｉａｔｉｏｎ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ | X-ray mask structure and manufacturing method therefor |
| US9152036B2 (en) | 2013-09-23 | 2015-10-06 | National Synchrotron Radiation Research Center | X-ray mask structure and method for preparing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS641926B2 (en) | 1989-01-13 |
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