JPS55124237A - Semiconductor treatment device - Google Patents
Semiconductor treatment deviceInfo
- Publication number
- JPS55124237A JPS55124237A JP3260279A JP3260279A JPS55124237A JP S55124237 A JPS55124237 A JP S55124237A JP 3260279 A JP3260279 A JP 3260279A JP 3260279 A JP3260279 A JP 3260279A JP S55124237 A JPS55124237 A JP S55124237A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- main section
- open air
- applying
- room
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To prevent the pollution by the open air by applying laser beams after an implantation of ion, without exposing to the open air, in the laser beam applying room which is connected to an ion implantation room and by giving an annealing. CONSTITUTION:An injection of ion impurities is performed by applying an ion beam 2 to the main section of a semiconductor substrate. Then, laser beams 11 are applied from a laser oscillation device 11 to the main section of a semicodncutor substrate 9 for which a crystalline damage has been given by the above-mentioned ion injection. Thus, only the damaged main section is liquefied, and it is recrystallized by stopping the application of laser beams, and the anealing is finished. Thus, without using a special high vacuum heating device, the main section of a semiconductor substrate 9 can be annealed in the vacuum room where there is no fear of pollution by the open air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3260279A JPS55124237A (en) | 1979-03-19 | 1979-03-19 | Semiconductor treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3260279A JPS55124237A (en) | 1979-03-19 | 1979-03-19 | Semiconductor treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55124237A true JPS55124237A (en) | 1980-09-25 |
Family
ID=12363401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3260279A Pending JPS55124237A (en) | 1979-03-19 | 1979-03-19 | Semiconductor treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55124237A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107249A (en) * | 1983-11-14 | 1985-06-12 | Mitsubishi Electric Corp | Device for implanting ion into semiconductor and thermal processing |
| JPH06252079A (en) * | 1993-02-23 | 1994-09-09 | G T C:Kk | Ion implantation method and its device |
| JP2002175772A (en) * | 2000-12-06 | 2002-06-21 | Ulvac Japan Ltd | Ion implanting device and ion implanting method |
| US7118996B1 (en) | 1996-05-15 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
| JP2007274007A (en) * | 2007-06-18 | 2007-10-18 | Toshiba Corp | Method for manufacturing semiconductor device |
| GB2514900A (en) * | 2013-04-10 | 2014-12-10 | Grey Technology Ltd | Vacuum cleaner |
-
1979
- 1979-03-19 JP JP3260279A patent/JPS55124237A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107249A (en) * | 1983-11-14 | 1985-06-12 | Mitsubishi Electric Corp | Device for implanting ion into semiconductor and thermal processing |
| JPH06252079A (en) * | 1993-02-23 | 1994-09-09 | G T C:Kk | Ion implantation method and its device |
| US7118996B1 (en) | 1996-05-15 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
| US7315035B2 (en) | 1996-05-15 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
| US7521699B2 (en) | 1996-05-15 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
| US8003958B2 (en) | 1996-05-15 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
| US8344336B2 (en) | 1996-05-15 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
| JP2002175772A (en) * | 2000-12-06 | 2002-06-21 | Ulvac Japan Ltd | Ion implanting device and ion implanting method |
| JP2007274007A (en) * | 2007-06-18 | 2007-10-18 | Toshiba Corp | Method for manufacturing semiconductor device |
| GB2514900A (en) * | 2013-04-10 | 2014-12-10 | Grey Technology Ltd | Vacuum cleaner |
| GB2514900B (en) * | 2013-04-10 | 2016-10-26 | Grey Tech Ltd | Vacuum cleaner |
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