JPS5473561A - Electrode structure of semiconductor device - Google Patents
Electrode structure of semiconductor deviceInfo
- Publication number
- JPS5473561A JPS5473561A JP14001477A JP14001477A JPS5473561A JP S5473561 A JPS5473561 A JP S5473561A JP 14001477 A JP14001477 A JP 14001477A JP 14001477 A JP14001477 A JP 14001477A JP S5473561 A JPS5473561 A JP S5473561A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- deposited
- psg
- bump electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
PURPOSE: To enhance the seating stability of bump electrode, avoiding crack occurrence in PSG passivation film, by constituting so that fragile PSG film may not exist just beneath the bump electrode composing on a semiconductor substrate.
CONSTITUTION: SiO2 film 12a is deposited on Si substrate 10, and a frame-like polycrystalline Si layer 11 having a notch 11a for wiring lead-out is formed around the intended bonding region, and PSG film 12b is deposited on the entire surface, then a base insulation film 12 is constituted with the films 12a and 12b. In the recess part of film 12 due to the presence of frame-like polycrystalline Si layer 11, Al layer 24A is deposited, and Al layer 24B to be connected to the electrode of circuit element is deposited on the outside of the film 12. Then, the entire surface is coated with PSG film 16, and openings 16a and 16b are provided to exposed part of film 12 and layer 24B, in which NiCr/Pd base metal layer 20 extending onto the film 16 is deposited. Again depositing PSG film 18, and opening 18b is provided, and Au bump electrode layer 22 to connect to the layer 20 is fitted.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14001477A JPS5473561A (en) | 1977-11-24 | 1977-11-24 | Electrode structure of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14001477A JPS5473561A (en) | 1977-11-24 | 1977-11-24 | Electrode structure of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5473561A true JPS5473561A (en) | 1979-06-12 |
Family
ID=15258918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14001477A Pending JPS5473561A (en) | 1977-11-24 | 1977-11-24 | Electrode structure of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5473561A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116642A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor device |
| JPS60262446A (en) * | 1984-06-08 | 1985-12-25 | Nec Kansai Ltd | Semiconductor pellet |
| US4680610A (en) * | 1983-11-30 | 1987-07-14 | Siemens Aktiengesellschaft | Semiconductor component comprising bump-like, metallic lead contacts and multilayer wiring |
-
1977
- 1977-11-24 JP JP14001477A patent/JPS5473561A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116642A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor device |
| US4680610A (en) * | 1983-11-30 | 1987-07-14 | Siemens Aktiengesellschaft | Semiconductor component comprising bump-like, metallic lead contacts and multilayer wiring |
| JPS60262446A (en) * | 1984-06-08 | 1985-12-25 | Nec Kansai Ltd | Semiconductor pellet |
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