JPS54108295A - Voltage non-linear resistor - Google Patents
Voltage non-linear resistorInfo
- Publication number
- JPS54108295A JPS54108295A JP1564478A JP1564478A JPS54108295A JP S54108295 A JPS54108295 A JP S54108295A JP 1564478 A JP1564478 A JP 1564478A JP 1564478 A JP1564478 A JP 1564478A JP S54108295 A JPS54108295 A JP S54108295A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- oxide
- voltage non
- sintering
- linear resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 6
- 238000005245 sintering Methods 0.000 abstract 3
- 239000011787 zinc oxide Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
PURPOSE: To improve voltage non-linearity and life by adding desired amount of one or more of T1, In, Y, or Ga to a material which comprises zinc oxide and desired amount of additional Bi and Co, and sintering.
CONSTITUTION: Adding one or more T1, In, Y, or Ga in the form of salt or oxide in an amount of 0.001 to 0.5 mol%, reduced to oxide, to a material which comprises major portion of zinc oxide and 0.1 to 3.0, 0.05 to 3.0, 0.05 to 3.0, 0.1 to 5.0, 0.02 to 3.0, 0.05 to 5.0, and 0.001 to 1.0 mol%, reduced to oxide, of Bi, Co, Mn, Sb, Cr, Si, and B, and sintering. For example, drying a slurry which comprises 0.001 to 0.5 mol% of one or more of T12O3, In2O3, Y2O3, or of Ga2O3 and ZnO of 96.75, Bi2O3 of 0.5, Co2O3 of 0.5, MnO2 of 0.5, Sb2O3 of 1.0, Cr2O3 of 0.5, SiO2 of 0.2, and B2O3 of 0.05 mol%, burning, adding binder, press molding to discs, and sintering at 1100 to 1300°C.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1564478A JPS54108295A (en) | 1978-02-14 | 1978-02-14 | Voltage non-linear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1564478A JPS54108295A (en) | 1978-02-14 | 1978-02-14 | Voltage non-linear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54108295A true JPS54108295A (en) | 1979-08-24 |
| JPS5749123B2 JPS5749123B2 (en) | 1982-10-20 |
Family
ID=11894414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1564478A Granted JPS54108295A (en) | 1978-02-14 | 1978-02-14 | Voltage non-linear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54108295A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1150306A2 (en) | 2000-04-25 | 2001-10-31 | Kabushiki Kaisha Toshiba | Current/voltage non-linear resistor and sintered body therefor |
-
1978
- 1978-02-14 JP JP1564478A patent/JPS54108295A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1150306A2 (en) | 2000-04-25 | 2001-10-31 | Kabushiki Kaisha Toshiba | Current/voltage non-linear resistor and sintered body therefor |
| EP1150306A3 (en) * | 2000-04-25 | 2003-04-02 | Kabushiki Kaisha Toshiba | Current/voltage non-linear resistor and sintered body therefor |
| EP1150306B2 (en) † | 2000-04-25 | 2015-07-01 | Kabushiki Kaisha Toshiba | Current/voltage non-linear resistor and sintered body therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5749123B2 (en) | 1982-10-20 |
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