JPH1174701A - Connection structure for dielectric waveguide line - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the connection structure for a dielectric waveguide line where a transmission loss in the connection section is small and the connection is easily attained with respect to the structure that is used for transmission of a high frequency signal for a printed circuit board applicable to a high frequency printed circuit board or a semiconductor element containing package or the like and where dielectric waveguide lines are connected and that is advantageous for miniaturization of the printed circuit board. SOLUTION: Waveguide regions 15A, 15B exposed to end faces of dielectric boards 11A, 11B are pressed into contact while being opposite to each other in a connection section between a 1st dielectric waveguide line 10A and a 2nd dielectric waveguide line 10B, an upper face conductor layer 12A of the 1st dielectric waveguide line 10A is extended onto an upper face conductor layer 12B of the 2nd dielectric waveguide line 12B, and a lower face conductor layer 13B of the 2nd dielectric waveguide line 10B is extended under a lower face conductor layer 13A of the 1st dielectric waveguide line 10A and they are connected respectively. Thus, a connection with a low loss is easily realized without leakage of electromagnetic waves.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection structure between dielectric waveguide lines for transmitting high-frequency signals in a microwave band, a millimeter wave band or the like.

[0002]

2. Description of the Related Art In the field of high-frequency circuits that handle high-frequency signals such as microwave bands and millimeter-wave bands, when high-frequency elements used in the circuits are small and a circuit system is formed on a single circuit board. However, in many cases, the circuit is divided into blocks for each function, and the circuit is connected between the blocks by a high-frequency transmission line. Conventionally, transmission lines for transmitting these high-frequency signals include waveguides, coaxial lines, microstrip lines, coplanar lines, and dielectric waveguide lines. The methods vary.

[0003] For example, in the case of a waveguide, a connection flange is formed at an end portion, and the waveguide is connected by screwing together. In the case of a coaxial line, it is connected using a dedicated connector having a coaxial structure. As described above, in the case of a waveguide or a coaxial line, they can be easily connected, but they cannot be formed on or in a substrate constituting a high-frequency circuit to reduce the size of the circuit.

On the other hand, a microstrip line or a coplanar line which is often formed in a wiring board used for a high-frequency circuit board or a package for accommodating a high-frequency semiconductor element is formed by bonding wires such as gold wires or bonding wires such as gold ribbons. The connection is made by connecting the signal line and the ground conductor layer using the ribbon, respectively, which is advantageous for miniaturization of the circuit.

Similarly, in the case of a dielectric waveguide line which is advantageous for miniaturization of a circuit, the end faces of dielectric waveguide lines having substantially the same size are brought into contact with each other and are formed above and below a dielectric substrate. The connection is made by electrically connecting the ground conductor layers with solder or the like.

[0006]

Generally, in a high-frequency region, signal intensity in a line is greatly attenuated, so that a transmission line is required to have low loss. Therefore, it is desirable that the loss at the connection part of the line is also small.

In the case of a waveguide or a coaxial line, the line can be easily connected with low loss. However, as described above, it is used for a wiring board constituting a high-frequency circuit such as a high-frequency semiconductor element storage package or a high-frequency circuit board. Had the problem of being too large.

On the other hand, in the case of a microstrip line or a coplanar line, the connection of the line is made by a gold wire or a gold ribbon as described above, so that the characteristic impedance at the connection portion becomes discontinuous and the high-frequency signal becomes high. There is a problem that it is difficult to connect the lines with low loss because reflection occurs and the high-frequency characteristics deteriorate.

Further, when a line is drawn out of a circuit in a package for housing a high-frequency semiconductor element by a microstrip line or a coplanar line to the outside of the package, these lines need to penetrate a wall for hermetically sealing the inside of the package. is there. In this case, since the dielectric constant around the line changes at the portion where the wall is present, there is a problem that the characteristic impedance changes and transmission characteristics deteriorate due to reflection of a high-frequency signal.

Further, according to the conventional connection of the dielectric waveguide lines, a gap is easily formed between the ground conductor layers at the contact portions of the dielectric waveguide lines, and depending on the mode of the high-frequency signal propagating through the lines. Electromagnetic waves of high-frequency signals leak from the gaps, and it is difficult to connect low-loss lines.

The present invention has been devised in view of the above circumstances, and has as its object to be used for transmission of a high-frequency signal in a wiring board applicable to a high-frequency circuit board, a semiconductor element housing package, and the like. An object of the present invention is to provide a connection structure of a dielectric waveguide line which has a small transmission loss at a connection portion and can be easily connected with respect to a structure for connecting the dielectric waveguide lines which is advantageous for miniaturization of a substrate. .

[0012]

The present inventor has studied the above problems, and as a result, has found that a structure for connecting dielectric waveguide lines as disclosed in Japanese Patent Laid-Open No. 6-53711. For each of the dielectric waveguide lines, the waveguide regions at the end faces of the dielectric waveguide lines are brought into contact with each other so that they are in contact with each other, and the ground conductor layers formed above and below the dielectric substrate are shifted from the contact positions. It has been found that the above problem can be solved by electrically connecting or attaching an auxiliary conductor plate that covers the waveguide region at the contact position and electrically connecting the ground conductor layers.

The connection structure of the dielectric waveguide of the present invention is as follows.
Two rows of through conductors for electrically connecting the upper conductor layer and the lower conductor layer are formed in a dielectric substrate sandwiched between the upper conductor layer and the lower conductor layer, and the upper conductor layer and the lower conductor layer are formed. A first dielectric waveguide line and a second dielectric waveguide line for transmitting a high-frequency signal by a waveguide region surrounded by the through-conductor and the through conductor are exposed at an end face of the dielectric substrate; The waveguide regions are brought into contact with each other so as to face each other, and the upper conductor layer of the first dielectric waveguide is extended on the upper conductor layer of the second dielectric waveguide. And electrically connects the upper conductor layers to each other, and extends the lower conductor layer of the second dielectric waveguide below the lower conductor layer of the first dielectric waveguide. It is characterized by being connected by electrically connecting them.

Further, in the connection structure for a dielectric waveguide line according to the present invention, the upper conductor layer and the lower conductor layer are electrically connected to each other in a dielectric substrate sandwiched between the upper conductor layer and the lower conductor layer. A first dielectric waveguide line for transmitting a high-frequency signal through a waveguide region surrounded by the upper conductor layer, the lower conductor layer, and the through conductor; And a dielectric waveguide line is abutted against each other such that the waveguide regions exposed on the end face of the dielectric substrate face each other, and the upper surface conductor layer of the first dielectric waveguide line is Is extended over the upper conductor layer of the second dielectric waveguide line to electrically connect the upper conductor layers, and the lower conductor layer of the first dielectric waveguide line is Extending below the lower conductor layer of the dielectric waveguide line of the first and electrically connecting the lower conductor layers to each other And a, is characterized in that it has connections.

Still further, the connection structure for a dielectric waveguide line according to the present invention is characterized in that the upper conductor layer and the lower conductor layer are electrically connected in a dielectric substrate sandwiched between the upper conductor layer and the lower conductor layer. Two rows of through conductors to be connected are formed, and two dielectric waveguide lines transmitting a high-frequency signal by a waveguide region surrounded by the upper conductor layer, the lower conductor layer, and the through conductor, The waveguide regions exposed on the end face of the dielectric substrate are brought into contact with each other so as to face each other, and the upper conductor layers and the lower conductor layers of each dielectric waveguide line are connected in the two rows of through conductors. Are electrically connected by a conductor plate having a width equal to or larger than the distance between the electrodes.

According to the connection structure of the dielectric waveguide lines of the present invention, at the connection portion of the two dielectric waveguide lines, the waveguide regions exposed on the end face of the dielectric substrate face each other. The upper conductor layer of one dielectric waveguide line is placed on the upper conductor layer of the other dielectric waveguide line beyond the contact part of the end faces of the dielectric substrates while being in contact with each other.
And the lower conductor layer of one dielectric waveguide line is extended below and electrically connected to the lower conductor layer of the other dielectric waveguide line. Is electrically connected across the abutting portion of the end faces of the dielectric substrates with a conductor plate having a width equal to or greater than the interval between two rows of through conductors, that is, a width equal to or greater than the width of the waveguide region. There is no gap between the upper conductor layer and the lower conductor layer at the upper and lower portions of the abutting portion between the substrates, thereby preventing leakage of high frequency signal electromagnetic waves from the abutting portion between the waveguide regions to the outside. A low loss connection between the waveguide lines is made possible, and the connection structure of the dielectric waveguide lines can be easily connected.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A connection structure of a dielectric waveguide according to the present invention will be described below with reference to the drawings. First, FIG. 7 is a perspective view showing an example of a dielectric waveguide line to which the connection structure of the present invention is applied. According to the dielectric waveguide line 1 shown in FIG. An upper conductor layer 3 and a lower conductor layer 4 are formed on the upper and lower surfaces of the substrate 2 so as to sandwich at least the line formation position of the dielectric substrate 2.

In addition, between the upper conductor layer 3 and the lower conductor layer 4 in the dielectric substrate 2, via-hole conductors are provided as two rows of through conductors for electrically connecting the upper conductor layer 3 and the lower conductor layer 4. Are provided to form two rows of via-hole conductor groups 5, whereby the upper conductor layer 3 and the lower conductor layer 4
And a region surrounded by the two rows of via-hole conductor groups 5 constitutes the dielectric waveguide line 1 having the waveguide region 6.

The via-hole conductor groups 5 are formed in two rows at a predetermined interval b and at a predetermined repetition interval c in the signal transmission direction, that is, the signal line forming direction. The predetermined interval b is set to be larger than 1/2 of the cutoff wavelength of the signal according to the high frequency signal transmitted in the waveguide region. There is no particular limitation on the distance a, but by setting it to about b / 2, it is possible to use the single-mode in which the upper conductor layer 3 and the lower conductor layer 4 are H-planes. On the other hand, a predetermined repetition interval c
Are formed at intervals less than half the wavelength of the high-frequency signal transmitted by the waveguide region 6, thereby forming an electrical wall.

As described above, the pitch c of the via-hole conductor group 5
Is less than one half of the signal wavelength λc, the electromagnetic wave of the high-frequency signal cannot be propagated in the direction perpendicular to the transmission line due to the electric side wall, and is propagated in the direction of the transmission line while being reflected. You. As a result, the waveguide line region 6 having a cross-sectional area of a × b surrounded by the upper conductor layer 3 and the lower conductor layer 4 and the two rows of via-hole conductor groups 5 is very similar to the dielectric waveguide. The obtained transmission characteristics are obtained.

By arranging the via-hole conductor groups 5 in four rows or six rows and forming pseudo conductor walls formed by the via-hole conductor groups 5 in two or three layers, leakage of electromagnetic waves from the conductor walls can be reduced. Can be more effectively prevented,
An auxiliary conductor layer for electrically connecting the via holes forming each row of the two rows of via hole conductor groups 5 may be appropriately formed as desired.

Further, the upper conductor layer 3 and the lower conductor layer 4
Are not necessarily formed by the via-hole conductors 5, for example, two rows (two sheets) of through-conductor layers electrically connecting the upper conductor layer 3 and the lower conductor layer 4 are formed. May be used.

According to such a waveguide line region 6, since the dielectric waveguide is formed, if the relative permittivity of the dielectric substrate 2 is set to ε, the waveguide size is 1 / the size of a normal waveguide.大 き^1/2 size. Therefore, when the dielectric substrate 2 is made of a material having a large relative dielectric constant, the waveguide size can be reduced, and the dielectric substrate 2 is used as a transmission line of a multilayer wiring board on which wiring is formed at a high density or a package for housing semiconductor elements. It will be as large as possible.

Next, an example of an embodiment of the connection structure of the dielectric waveguide line of the present invention is shown in FIG. 1 by an example in which the connection structure of the present invention is applied to such a dielectric waveguide line. . FIG. 1 is an exploded perspective view showing an example of an embodiment of the present invention in which two dielectric waveguide lines are connected.

In FIG. 1, reference numeral 10A denotes a first dielectric waveguide line, 10B denotes a second dielectric waveguide line, and 11A and 11A.
B is a dielectric substrate, 12A and 12B are upper conductor layers, 13A and 13B
Is a lower conductor layer, and the dielectric substrate 11A, 11B is sandwiched between upper conductor layers 12A, 12B and lower conductor layers 13A, 13B. 14A and 14B are two rows of via-hole conductor groups, each of which is constituted by a large number of via-hole conductors as two rows of through conductors for electrically connecting between the upper conductor layers 12A and 12B and the lower conductor layers 13A and 13B. Thereby, the upper conductor layer 12A
12B, lower conductor layers 13A and 13B and two rows of via hole conductors
Waveguide regions 15A and 15B are constituted by regions surrounded by 14A and 14B.

Here, in the first dielectric waveguide line 10A and the second dielectric waveguide line 10B, similarly to the dielectric waveguide line 1 shown in FIG. 11B has a predetermined thickness a and has two rows of via-hole conductor groups 14A and 14B.
Are formed in two rows at a predetermined interval b and at a predetermined repetition interval c in the direction in which the waveguide regions 15A and 15B are formed.

According to the connection structure of the dielectric waveguide line of the present invention shown in FIG. 1, the first dielectric waveguide line 10A is connected to the second dielectric waveguide line 10A.
And the respective dielectric substrates 11
The waveguide regions 15A and 15B exposed at the end faces of the A and 11B are brought into contact with each other so as to face each other, and the upper conductor layer 12A of the first dielectric waveguide line 10A is connected to the second dielectric waveguide. The upper surface conductor layer 12 extends on the upper surface conductor layer 12B of the pipe line 10B.
A and 12B are electrically connected to each other, and the lower conductor layer 13B of the second dielectric waveguide line 10B is connected to the first dielectric waveguide line.
Extending below the lower conductor layer 13A of 10A, the lower conductor layers 13A
B are electrically connected to each other to form a dielectric substrate 11A.
-It is characterized in that it is connected without leaving a gap between the conductor layers at the contact position of the end face of 11B.

As described above, the structure of the connection portion between the dielectric waveguide lines 10A and 10B is made stepwise, and the dielectric substrates 11A and 11B are formed.
The upper and lower conductor layers 12A and 12B and the lower conductor layers 13A and 13B are aligned at positions shifted from the end faces of the dielectric substrates 11A and 11B after matching so that the cross sections of the waveguide regions 15A and 15B exposed at the end faces of the dielectric layers 11A and 15B coincide. Are connected to each other with solder or the like. This makes the first
Dielectric waveguide line 10A and second dielectric waveguide line 10B
Are easily electrically and mechanically connected to each other, and there is no leakage of electromagnetic waves from the end face where the dielectric substrates 11A and 11B are brought into contact with each other when used in the TE10 mode in which the upper and lower conductor layers are H surfaces. It becomes a connection structure.

Next, another embodiment of the connection structure of the dielectric waveguide line according to the present invention is shown in FIG. 2 in an exploded perspective view similar to FIG.

In FIG. 2, reference numeral 20A denotes a first dielectric waveguide line, reference numeral 20B denotes a second dielectric waveguide line, and 21A and 21A.
B is a dielectric substrate, 22A and 22B are upper conductor layers, 23A and 23B
Is a lower conductor layer, and the dielectric substrate 21A / 21B is sandwiched between upper conductor layers 22A / 22B and lower conductor layers 23A / 23B. 24A and 24B are a group of via-hole conductors in two rows, and are constituted by a large number of via-hole conductors as two rows of through-hole conductors for electrically connecting the upper conductor layers 22A and 22B and the lower conductor layers 23A and 23B. Thereby, the upper conductor layer 22A
22B, lower conductor layers 23A and 23B and two rows of via-hole conductor groups
A region surrounded by 24A and 24B constitutes waveguide regions 25A and 25B.

Here, the first dielectric waveguide line 20A and the second dielectric waveguide line 20B also have a dielectric substrate 21A similar to the dielectric waveguide line 1 shown in FIG. Has a predetermined thickness a, the dielectric substrate 21B has a thickness smaller than the predetermined thickness a by the thickness of the upper conductor layer 22B and the lower conductor layer 23B, and the two rows of via-hole conductor groups 24A and 24B Are formed in two rows at a predetermined repetition interval c in the formation direction of the waveguide regions 25A and 25B.

According to the connection structure of the dielectric waveguide line of the present invention shown in FIG. 2, the first dielectric waveguide line 20A is connected to the second dielectric waveguide line 20A.
And the respective dielectric substrates 21
The waveguide regions 25A and 25B exposed at the end faces of the first and second waveguides A and 21B are brought into contact with each other so as to face each other, and the upper conductor layer 22A of the first dielectric waveguide line 20A is connected to the second dielectric waveguide. The upper conductor layer 22 extends on the upper conductor layer 22B of the pipe line 20B.
A and 22B are electrically connected to each other, and the lower conductor layer 23A of the first dielectric waveguide line 20A is connected to the second dielectric waveguide line.
The lower conductor layers 23A and 23 extend below the lower conductor layer 23B of 20B.
B are electrically connected to each other to form the dielectric substrate 21A.
-It is characterized in that it is connected to the contact position of the end face of 21B without leaving a gap between the conductor layers.

As described above, the structure of the connecting portion between the dielectric waveguide lines 20A and 20B is changed to the second connecting portion by the upper conductor layer 22A and the lower conductor layer 23A of the first dielectric waveguide line 20A. A waveguide region exposed on the end faces of the dielectric substrates 21A and 21B so as to sandwich the dielectric substrate 21B of the dielectric waveguide 20B.
After matching so that the cross sections of 25A and 25B coincide with each other, the upper surface conductor layer 22A is shifted from the end faces of the dielectric substrates 21A and 21B.
-Connect 22B to each other and lower surface conductor layers 23A and 23B by soldering or the like. As a result, the first dielectric waveguide line 20A and the second dielectric waveguide line 20B are easily electrically and mechanically connected to each other, and are used in the TE10 mode in which the upper and lower conductor layers are H-planes. In this case, the connection structure has no leakage of electromagnetic waves from the end face where the dielectric substrates 21A and 21B are in contact with each other.

Next, FIG. 3 is an exploded perspective view similar to FIGS. 1 and 2 showing another embodiment of the connection structure of the dielectric waveguide line according to the present invention.

In FIG. 3, 30A is a first dielectric waveguide line, 30B is a second dielectric waveguide line, and 31A and 31
B is a dielectric substrate, 32A and 32B are upper conductor layers, 33A and 33B
Is a lower conductor layer, and the dielectric substrate 31A, 31B is sandwiched between the upper conductor layers 32A, 32B and the lower conductor layers 33A, 33B. 34A and 34B are a group of via-hole conductors in two rows, each of which is constituted by a large number of via-hole conductors as two rows of through conductors for electrically connecting the upper conductor layers 32A and 32B and the lower conductor layers 33A and 33B. Thereby, the upper conductor layer 32A
32B, lower conductor layers 33A and 33B and two rows of via hole conductors
The region surrounded by 34A and 34B constitutes the waveguide regions 35A and 35B.

Here, in the first dielectric waveguide line 30A and the second dielectric waveguide line 30B, similarly to the dielectric waveguide line 1 shown in FIG. 7, the dielectric substrate 31A is formed.・ 31B
Has a predetermined thickness a and has two rows of via-hole conductor groups 34A and 34A.
B is formed in two rows at a predetermined interval b at a predetermined repetition interval c in the direction of forming the waveguide regions 35A and 35B.

According to the connection structure of the dielectric waveguide line of the present invention shown in FIG. 3, the first dielectric waveguide line 30A is connected to the second dielectric waveguide line 30A.
And the respective dielectric substrates 31
The waveguide regions 35A and 35B exposed at the end faces of the A and 31B are brought into contact with each other so as to face each other, and the upper conductor layers 32A and 32B of the respective dielectric waveguide lines 30A and 30B and the lower conductor layers are formed. 33A and 33B are electrically connected to each other by a conductor plate 36 having a width equal to or greater than the interval between two rows of through conductors.

In FIG. 3, the conductor plate 36 is formed on the upper conductor layer 32A.
The state before connecting to 32B and the lower conductor layers 33A and 33B is shown, and the waveguide regions 35A and 35B exposed at the end faces of the respective dielectric substrates 31A and 31B are brought into contact with each other so as to face each other. After that, in FIG. 3, the upper conductor layers 32A and 32B are indicated by the two-dot chain line and the one-dot chain line, and the lower conductor layers 33A and 33B are respectively indicated by the two-dot chain line and the one-dot chain line. The upper surface conductor layers 32A and 32B are attached by using a molten metal such as solder or a conductive paste such as silver paste, or by attaching them using screws or the like.
And the lower conductor layers 33A and 33B, respectively, and electrically connected to the upper conductor layers 32A and 32B and the lower conductor layers 33A and 33B.
33B are electrically connected to each other to form a dielectric waveguide line 30A / 30.
B are connected to each other.

As described above, the structure of the connecting portion between the dielectric waveguide lines 30A and 30B is adjusted so that the cross sections of the waveguide regions 35A and 35B exposed at the end faces of the dielectric substrates 31A and 31B coincide. Thereafter, the gap between the conductors between the upper conductor layers 32A and 32B and between the lower conductor layers 33A and 33B located at the end faces of the dielectric substrates 31A and 31B is electrically connected to the conductor plates 36 so as to cover the waveguide regions 35A and 35B. Connect to As a result, the first dielectric waveguide line 30A and the second dielectric waveguide line 30B are easily electrically and physically connected, and the upper conductor layer 32A is formed.
The gap between conductors between 32B and between the lower conductor layers 33A and 33B can be shielded by the conductor plate 36, and the dielectric substrate 31A can be used in the TE10 mode in which the upper and lower conductor layers are H surfaces.
-The connection structure has no leakage of electromagnetic waves from the end faces where the 31Bs are in contact with each other.

In addition to the metal plate and the like as described later, the conductor plate 36 may include upper surface conductor layers 32A and 32B and lower surface conductor layers 33A and 33 at the contact portions between the dielectric substrates 31A and 31B.
It is also possible to use a conductive paste such as a silver paste printed and applied on Bs.

In the above-described example of the connection structure of the dielectric waveguide line of the present invention, the contact surfaces between the dielectric substrates are all perpendicular to the waveguide region. This may be an oblique surface as long as the waveguide regions are abutted and joined without a gap so that they coincide with each other, and they fit into each other so that the waveguide regions can be easily aligned. The shape may be such that one is convex and the other is concave.

The dielectric substrate of the dielectric waveguide line according to the present invention is not particularly limited as long as it functions as a dielectric and does not hinder the transmission of high-frequency signals. It is desirable that the dielectric substrate be made of ceramics from the viewpoints of precision in forming the substrate and easiness of manufacture.

As such ceramics, ceramics having various relative dielectric constants have been known.
In order to transmit a high-frequency signal through the above-described waveguide line, a paraelectric material is desirable. This is because ferroelectric ceramics generally have large dielectric loss and high transmission loss in a high frequency range. Therefore, the relative dielectric constant ε _r of the dielectric substrate 1 is suitably about 4 to 100.

In general, the line width of a wiring layer formed on a multilayer wiring board or a package for housing a semiconductor element has a maximum of 1
mm, the minimum frequency that can be used is 15 GHz when a material having a relative dielectric constant of 100 is used and the upper surface is an H plane, that is, an electromagnetic field distribution in which the magnetic field is wound parallel to the upper surface. , And can be used in the microwave band region. On the other hand, a dielectric made of a resin generally used as a dielectric substrate has a relative dielectric constant ε _r of about 2, so that a line width of 1 mm cannot be used unless the line width is about 100 GHz or more. Become.

In addition, many of such paraelectric ceramics have very small dielectric loss tangents, such as alumina and silica, but not all paraelectric ceramics can be used. In the case of a dielectric waveguide line, there is almost no loss due to the conductor, and most of the loss during signal transmission is due to the dielectric, and the loss due to the dielectric α
(DB / m) is expressed as follows. α = 27.3 × tanδ / λ / ｛1- (λ / λc) ² ｝ ^1/2 where tanδ: dielectric loss tangent of dielectric λ: wavelength in dielectric λc: cut-off wavelength Standardized rectangular waveguide According to the (WRJ series) shape, {1- (λ / λc) ² } ^1/2 in the above equation is about 0.75.

Therefore, the transmission loss is practically usable.
In order to make it 100 (dB / m) or less, it is necessary to select a dielectric so that the following relationship is satisfied.

F × ε _r ^1/2 × tan δ ≦ 0.8 where f is the frequency (GHz) to be used.

Examples of such a dielectric substrate include alumina ceramics, glass ceramics, and aluminum nitride ceramics. For example, a ceramic raw material powder is mixed with an appropriate organic solvent and a solvent to form a slurry, which is conventionally formed. A plurality of ceramic green sheets are obtained by forming a sheet using a well-known doctor blade method, a calendar roll method, or the like, and thereafter,
Each of these ceramic green sheets is subjected to an appropriate punching process and laminated. It is manufactured by firing at a temperature.

As the upper conductor layer and the lower conductor layer, for example, when the dielectric substrate is made of alumina ceramics, an oxide such as alumina, silica, magnesia, or an organic solvent or solvent is used for a metal powder such as tungsten. The paste that was added and mixed was printed on a ceramic green sheet by a thick film printing method so as to completely cover at least the transmission line, and then fired at a high temperature of about 1600 ° C. to a thickness of about 10 to 15 μm. It is formed as follows. Further, as the metal powder, copper / gold / silver is preferable for glass ceramics, and tungsten / molybdenum is preferable for aluminum nitride ceramics.

In order to extend the upper conductor layer and the lower conductor layer at the connection portion of the dielectric waveguide, a dielectric layer may be formed further above or below it.

The two rows of through conductors may be formed by, for example, a via hole conductor group, a through hole conductor group, or the like as described above. And the like. These through conductors, for example, the same metal paste as the upper surface conductor layer and the lower surface conductor layer is embedded in a through hole produced by punching a ceramic green sheet, and then,
It may be formed by firing simultaneously with the dielectric substrate. When the through conductors are formed by via-hole conductor groups or through-hole conductor groups, it is appropriate that each through-conductor has a diameter of 50 to 300 μm.

Further, since the conductor plate 36 is for preventing electromagnetic waves from leaking from the gap between the conductor layers of the connecting portions, any conductive metal plate or metal paste, if it can cover the gap, can be used. Any of metal foil and the like may be used.

Next, FIG. 4 is a cross-sectional view showing an example in which the connection structure of the dielectric waveguide line of the present invention is applied to a package for housing a semiconductor element. FIG. 4 shows an example in which the connection structure shown in FIG. 1 is applied. In FIG. 4, reference numeral 40 denotes a circuit board, and 41A and 41B denote two semiconductor element housing packages mounted on the circuit board 40. Reference numerals 42A and 42B denote dielectric waveguide lines formed from the insides of the respective semiconductor element storage packages 41A and 41B to the end faces of the substrates.
B is sandwiched between the upper conductor layers 44A and 44B and the lower conductor layers 45A and 45B, and two rows of through conductors (not shown) are formed inside the dielectric substrates 43A and 43B to form a waveguide region. I have. At one end of the dielectric waveguide lines 42A and 42B, the high-frequency semiconductor elements 46A and 46B mounted inside the cavities of the semiconductor element housing packages 41A and 41B are connected to the waveguide region. It is electrically connected via a via hole and a bonding wire, and the other end is connected outside the cavity of the semiconductor element housing packages 41A and 41B by the connection structure of the present invention.

In the figure, a is a dielectric substrate 43A.
The contact position between 43B is indicated by b. The upper surface conductor layer 44A of the dielectric waveguide line 42A is connected to the dielectric substrate 43B of the dielectric waveguide line 42B.
The connection position between the upper conductor layers 44A and 44B extended upward
c is a lower conductor layer obtained by extending the lower conductor layer 45B of the dielectric waveguide line 42B below the dielectric substrate 43A of the dielectric waveguide line 42A.
The connection positions of 45A and 45B are shown.

By connecting the semiconductor element housing packages to each other by such a connection structure of the dielectric waveguide lines, the high-frequency transmission line is connected from the inside of the cavity of the semiconductor element housing packages 41A and 41B to the outside as in the conventional case. Reflection of high-frequency signals that occurs when the waveguides exit, and leakage or reflection of high-frequency signals at the connection between the dielectric waveguide lines outside the cavity do not occur, and the dielectric waveguide lines have good high-frequency characteristics. Can be connected.

[0056]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a 30 m long structure as shown in FIG.
m of dielectric waveguide lines were manufactured. In this dielectric waveguide line, four layers of ceramic dielectric sheets having a thickness of 0.2 mm are laminated, and b = 2 mm and c = 0.26 m as through conductors.
Two rows of via-hole conductor groups having a diameter of 0.1 mm were formed so as to have a diameter m. The power supply part for the high-frequency signal is 3 m from the top of the ceramic dielectric sheet on which the 0.1 mm via hole is laminated.
Layers were formed to allow pin feeding. The dielectric properties of the dielectric material are as follows: a glass ceramic having a relative dielectric constant of 5.0 and a dielectric loss tangent of 8 × 10 ^-4 at 60 GHz is used. The upper and lower conductor layers and the via hole conductor group are printed and coated with a copper metallizing paste. At 900 ° C. in a nitrogen atmosphere.

The transmission characteristics of a high-frequency signal were measured for the dielectric waveguide line thus manufactured. The measurement results are shown in a diagram in FIG.

In FIG. 5, the horizontal axis represents the frequency f (GHz).
And the vertical axis the transmission characteristic S (dB), the two characteristic curves represent the S ₁₁ and S _21, respectively. Figure 5 is shows the characteristics including the loss of the power supply pin, as can be seen from the characteristic curve of the S _21, good characteristics of -1dB in 45GHz is obtained from 40.

Next, two dielectric waveguide lines are prepared, and these dielectric substrates are brought into contact with the waveguide regions in alignment with each other and connected with a resin adhesive, and at the same time, as shown in FIG. A silver paste was used as the conductor plate in the above example, and a width of 3 mm or more in width in the direction of the waveguide region was set on the upper conductor layer and the lower conductor layer in contact with the dielectric substrate at a width of at least the distance between two rows of via hole conductor groups. It was applied with a thickness of 1 mm to produce a connection structure of the dielectric waveguide line of the present invention.

The transmission characteristics of high-frequency signals of the dielectric waveguide having the connection structure of the present invention were measured in the same manner. FIG. 6 shows the measurement result in the same diagram as FIG.

Also in FIG. 6, the horizontal axis is the frequency f (GHz).
And the vertical axis the transmission characteristic S (dB), the two characteristic curves represent the S ₁₁ and S _21, respectively. By comparing the result of FIG. 6 with the result of FIG. 5, there is almost no loss due to the connection structure, and the connection structure of the dielectric waveguide line of the present invention has a small transmission loss at the connection portion and is easy to use. It can be seen that the connection is possible.

[0062]

As described above in detail, according to the connection structure of the dielectric waveguide line of the present invention, the waveguide exposed at the end face of the dielectric substrate at the connection portion between the two dielectric waveguide lines. Tube regions are brought into contact with each other so as to be opposed to each other, and the upper surface conductor layer of one dielectric waveguide line is moved beyond the contact portion at the end face of the dielectric substrates to the other dielectric waveguide. Because the upper conductor layer of the line and the lower conductor layer of one dielectric waveguide line are extended under the lower conductor layer of the other dielectric waveguide line and electrically connected to each other, or The conductor layers and the lower conductor layers are electrically connected to each other by a conductor plate having a width equal to or greater than the distance between two rows of through conductors, that is, a width equal to or greater than the width of the waveguide region, across the contact portions of the end faces of the dielectric substrates. Connected to the upper and lower parts of the abutment between the dielectric substrates There is no gap between the upper conductor layer and the lower conductor layer, so that leakage of high frequency signal electromagnetic waves from the abutting portion of the waveguide regions to the outside is eliminated, and low-loss connection between the dielectric waveguide lines is achieved. A connection structure of a dielectric waveguide line which can be connected easily can be obtained.

According to the present invention, two dielectric waveguide lines are used for transmitting high-frequency signals on a wiring board applicable to a high-frequency circuit board or a package for accommodating a semiconductor element, and are advantageous for miniaturization of the board. With respect to the connection structure, a connection structure of a dielectric waveguide line having a small transmission loss at a connection portion and capable of being easily connected can be provided.

By applying the connection structure of the dielectric waveguide line of the present invention to a package for housing a semiconductor element or a wiring board of a high-frequency circuit, it is easy and highly reliable to connect the dielectric waveguide line in these. A low-cost high-frequency circuit connection structure can be provided.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing an example of an embodiment of a connection structure of a dielectric waveguide line according to the present invention.

FIG. 2 is an exploded perspective view showing another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention.

FIG. 3 is an exploded perspective view showing another example of the embodiment of the connection structure of the dielectric waveguide line of the present invention.

FIG. 4 is a cross-sectional view showing an example of an embodiment in which the connection structure of the dielectric waveguide line of the present invention is applied to a package for housing a semiconductor element.

FIG. 5 is a diagram showing transmission characteristics of the dielectric waveguide line shown in FIG. 7;

FIG. 6 is a diagram showing transmission characteristics of a connection structure of a dielectric waveguide line according to the present invention.

FIG. 7 is a perspective view showing an example of a dielectric waveguide line to which the connection structure of the dielectric waveguide line of the present invention is applied.

[Explanation of symbols]

1, 42A, 42B: dielectric waveguide line 10A, 20A, 30A: first dielectric Waveguide lines 10B, 20B, 30B... Second dielectric waveguide lines 2, 11A, 11B, 21A, 21B, 31A, 31B, 43A, 43B
... Dielectric substrate 3, 12A, 12B, 22A, 22B, 32A, 32B, 44A, 44B
... Top conductor layer 4, 13A, 13B, 23A, 23B, 33A, 33B, 45A, 45B
... lower surface conductor layer 5, 14A, 14B, 24A, 24B, 34A, 34B ... through conductor (via hole conductor group) 6, 15A, 15B, 25A, 25B, 35A, 35B ... waveguide region 36 ... Conductor plates

Claims (3)

[Claims] 1. A two-row through conductor that electrically connects the upper conductor layer and the lower conductor layer is formed in a dielectric substrate sandwiched between the upper conductor layer and the lower conductor layer, and the upper conductor layer A first dielectric waveguide line and a second dielectric waveguide line for transmitting a high-frequency signal through a waveguide region surrounded by the lower conductor layer and the through conductor; And the upper surface conductor layer of the first dielectric waveguide line is brought into contact with each other so that the waveguide regions exposed at the end surfaces of the second dielectric waveguide line face each other. The upper conductor layer is extended over the first conductor layer to electrically connect the upper conductor layers to each other, and the lower conductor layer of the second dielectric waveguide is connected to the first conductor layer.
A connection structure for a dielectric waveguide line, wherein the connection is established by extending below the lower conductor layer of the dielectric waveguide line and electrically connecting the lower conductor layers to each other. 2. A dielectric substrate sandwiched between an upper conductor layer and a lower conductor layer, wherein two rows of through conductors for electrically connecting the upper conductor layer and the lower conductor layer are formed, and the upper conductor layer is formed. A first dielectric waveguide line and a second dielectric waveguide line for transmitting a high-frequency signal through a waveguide region surrounded by the lower conductor layer and the through conductor; And the upper surface conductor layer of the first dielectric waveguide line is brought into contact with each other so that the waveguide regions exposed at the end surfaces of the second dielectric waveguide line face each other. The upper conductor layer is extended on the second conductor layer to electrically connect the upper conductor layers to each other, and the lower conductor layer of the first dielectric waveguide is connected to the second conductor waveguide.
A connection structure for a dielectric waveguide line, wherein the connection is established by extending below the lower conductor layer of the dielectric waveguide line and electrically connecting the lower conductor layers to each other. 3. A dielectric substrate sandwiched between an upper conductor layer and a lower conductor layer, two rows of through conductors for electrically connecting the upper conductor layer and the lower conductor layer are formed, and the upper conductor layer And two dielectric waveguide lines transmitting a high-frequency signal by a waveguide region surrounded by the lower conductor layer and the through conductor, the waveguide regions exposed on the end face of the dielectric substrate are connected to each other. Abut each other so as to face each other,
The upper conductor layers and the lower conductor layers of each dielectric waveguide line are electrically connected to each other by a conductor plate having a width equal to or larger than the distance between the two rows of through conductors. Connection structure of dielectric waveguide line.