JPH1140869A - Metal-ceramic laminated thin film and forming method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent mutual diffusion and diffusion between a substrate and an electrode material by a method wherein a barrier layer is provided in a specific alloy thin film, so as to restrain mutual diffusion, and furthermore a specific ferroelectric thin film is deposited thereon. SOLUTION: A Ti thin film serving as a barrier layer is deposited through a sputtering method on a laminated film formed of TiNi/SiO2 /Si substrate, so as to prevent mutual diffusion from occurring between Pt and TiNi. The barrier layer of Ti thin film is formed in thickness of 1 nm to 1 μm. Furthermore, a Pt thin film serving as a barrier layer for a ferroelectric body is formed on the laminated film, formed of TiNi/SiO2 /Si substrate where the Ti barrier layer is formed. Then, a thin film of lead titanate ferroelectric material is formed through a sol-gel method. by these processes, mutual diffusion can be restrained effectively. Thorough this setup, a superior metal-ceramic laminated thin film where two functional materials are effectively made use of can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ti-containing N
i-based alloy thin film or Ti-based alloy thin film containing Ni and P
Metals with good thin-film lamination structure without interdiffusion in functional fusion material using bTiO ₃ -based ferroelectric thin film
The present invention relates to a laminated thin film of ceramics and a method for forming the same.

[0002]

2. Description of the Related Art In recent years, a ferroelectric material exhibiting a piezoelectric effect, a magnetostrictive material utilizing a magnetostrictive phenomenon, a shape memory alloy utilizing a thermal effect, and the like have been used as an actuator for controlling a small displacement by forming a thin film. Is being considered (1)
G. Yi and M Sayer, Am. Ceram. Bull., 70 (1991) 1173.
2) T. Fukuda, H. Hosokai, H. Ohyama, H. Kashimoto and FA
rai, Proc. IEEE MEMS'91 Workshop, (1991) 210.3) A.
D.Johnson, JDBusch, CARay and C.Sloan, Mat.Res.So
c. Symp. Proc. 276 (1992) 151.). By using this thin film production technique to form a composite structure or laminate of phases having different functions, materials having higher intellectual functions are being developed. Under such circumstances, a stacked thin film structure of a Ni-based alloy containing Ti or a Ti-based alloy containing Ni, particularly a TiNi shape memory alloy and a lead titanate (PbTiO ₃ ) -based ferroelectric material exhibiting piezoelectricity is constructed. Thus, a new function fusion material that can selectively respond to temperature and electric field and complement each other can be considered.

When using a ferroelectric material, it should be noted that the main ferroelectric material is a crystalline film,
In order to obtain a ferroelectric crystal structure, heat treatment in a limited temperature range determined by the material is required. If this temperature is high, interdiffusion occurs between heterogeneous functional materials, or between electrodes, the selected substrate or base, etc., and the properties originally possessed by each material are lost. Adverse effects may occur. For this reason, in the case of a combination with a heterogeneous functional material, there is often a limit to the lamination as it is, and therefore, it is necessary to take other measures.

Further, characteristics required as an electrode material for a ferroelectric capacitor include a sufficiently low electric resistance, a small mismatch in lattice constant with the ferroelectric material, a high heat resistance, a low reactivity, High diffusion barrier properties and good adhesion to the underlayer and ferroelectric material are required, but the choice of which electrode material to use in conjunction with materials that exhibit different functions also poses a problem. . If there is no material suitable for such an electrode material, a laminated structure must be examined by combining materials suitable for the conditions. However, there are also side effects associated therewith, and selection of an electrode material under optimal conditions involves a difficult problem.

Further, in a Ti-containing Ni-based alloy such as the above-mentioned TiNi shape memory alloy or a Ni-containing Ti-based alloy, a lead titanate (Pb)
There is a lot of problem because considerably intense interdiffusion occurs between the ferroelectric substance and a TiO ₃ -based ferroelectric substance, for example, a new oxide layer is formed by reacting with oxygen at the interface. As described above, the TiNi layer has a problem that a reaction layer is formed not only with the ferroelectric material but also with the Si substrate and the Pt electrode material.

[0006] For this reason, conventionally, a Ni-based alloy thin film containing Ti, such as a TiNi shape memory alloy, or a Ti-based alloy thin film containing Ni and a PbTiO ₃ -based ferroelectric thin film are combined for practical use. A new and functional material has not been realized.

[0007]

SUMMARY OF THE INVENTION The present invention relates to a Ti-containing Ni-based alloy such as TiNi shape memory alloy or N-based alloy.
A new functional material is realized by fusing the functions of the Ti-based alloy containing i and the PbTiO ₃ -based ferroelectric material, and an effective barrier layer is formed between the two functional materials to prevent mutual diffusion and And a metal-ceramic laminated thin film capable of effectively preventing diffusion between a substrate and an electrode material, and a method for forming the same. In addition, in the present invention, both the dielectric constant and the dielectric loss are equivalent to those of a single-layer ferroelectric film, and a metal capable of easily obtaining a functional element in which such ferroelectric characteristics and shape memory characteristics are combined is easily obtained. -To provide a ceramic laminated thin film and a method for forming the same.

[0008]

According to the present invention, a barrier layer for suppressing interdiffusion is further provided on a Ni-based alloy thin film containing 1 Ti or a Ti-based alloy thin film containing Ni. metal, characterized in that it comprises a PbTiO ₃ based ferroelectric thin film - between the Ti-based alloy thin film and PbTiO ₃ based ferroelectric thin film containing Ni-based alloy thin film or Ni containing ceramic multilayer thin film 2 Ti In addition, as a barrier layer for suppressing mutual diffusion,
Ti and P on the i-based alloy thin film or Ti-based alloy thin film side
a metal-ceramic laminated thin film characterized in that a laminated thin film of Pt is provided on the bTiO ₃ -based ferroelectric thin film side 3 The Ni-based alloy thin film or the Ti-based alloy thin film is Ti4
The metal-ceramic laminated thin film 4 Ti thin film and the Pt thin film each having a barrier layer of 1 n each comprising a TiNi alloy of 0 to 60 at% and the balance being Ni.
(2) characterized in that it has a film thickness of m to 1 μm.
Or the metal-ceramic laminated thin film 5 described in 3 above, wherein the Ni-based alloy thin film contains 30 at% or more of Ni as a main component, and the Ti-based alloy thin film contains 30 at% or more of Ti as a main component. 6. The metal-ceramic laminated thin film according to any one of the above items 1 to 5, wherein the metal-ceramic laminated thin film is laminated on a Si substrate having an SiO ₂ layer formed on a surface thereof. 7. The PbTiO ₃ -based ferroelectric thin film is made of PZT (Pb
_{(Zr 1-x Ti x)} O 3, x <1) system strong metal according to each of the 1 to 6, characterized in that a dielectric thin film - the ceramic multilayer thin film 8 on the substrate, 1 by sputtering 3μm Ti
After forming a Ni-based alloy thin film containing Ni or a Ti-based alloy thin film containing Ni, a Ti thin film and a Pt thin film each having a thickness of 1 nm to 1 μm are formed as a barrier layer on the thin film by sputtering in this order. 9. A method for forming a metal-ceramic laminated thin film, wherein a lead titanate-based ferroelectric thin film is formed on a barrier layer by a sol-gel method. 10. The method for forming a metal-ceramic multilayer thin film according to the above 7, wherein a certain TiNi alloy thin film is formed by sputtering. 10. The metal-ceramic multilayer according to the above 8 or 9, wherein a Si substrate is used as a substrate. 1 above, and forming a SiO ₂ layer in advance by thermal oxidation method for forming 11 Si surface of the substrate of the thin film A method for forming a ceramic multilayer thin film - metal described.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION
The present invention relates to a Ni-based alloy containing Ti such as TiNi shape memory alloy or a Ni-containing Ti-based alloy such as a TiNi shape memory alloy and a PbTiO ₃ -based ferroelectric material, and a substrate or both functional materials. Interdiffusion, especially PbTiO ₃
Most of the ferroelectric thin films are crystalline films and require heat treatment, so that the problem of diffusion cannot be described without exception. First, for example, a TiNi shape memory alloy film is formed on a Si substrate. When a TiNi thin film is formed directly on a Si substrate, as shown in a comparative example described later, STi is formed in the TiNi layer.
i diffuses. As a method of preventing this diffusion, Si
It is effective to thermally oxidize the (100) substrate to form a SiO ₂ layer on the surface. FIG. 6 shows a cross-sectional structure of a TiNi film formed using a SiO ₂ / Si substrate at a substrate temperature of 450 ° C. FIG. 7 shows the result of X-ray diffraction of this laminated film. From FIG. 6, it can be seen that no reaction phase exists at the boundary between the SiO ₂ and the TiNi layer. Also, from the result of X-ray diffraction, Si was not diffused into the TiNi layer,
The O ₂ layer can prevent the diffusion of Si into the TiNi layer,
It can be seen that the iO ₂ layer is an effective barrier. In addition,
The TiNi film is made of Ti-4 under the same conditions as the embodiment described later.
8 at. % Ni alloy target. It was formed using an F magnetron sputtering apparatus.

Further, from the result of the X-ray diffraction, it was found that SiO ₂ / S
It was found that the TiNi thin film formed on the i-substrate showed a B2 structure which is an austenite phase and the (110) plane was preferentially oriented. In general, it is known that the preferential orientation of the film surface largely depends on the film forming method at the initial stage of film formation. Since the oxide has a large surface energy, it is considered that the (110) plane, which is the closest plane having the lowest surface energy in the B2 structure, is preferentially oriented. Thus, the SiO ₂ layer on the Si substrate is effective as a barrier.

Next, a PbTiO ₃ -based ferroelectric thin film and Ti
In the diffusion at the Ni interface, as shown in a comparative example described later, at the interface between the PbTiO ₃ -based ferroelectric thin film and TiNi, mutual diffusion occurs due to reaction with oxygen or formation of a compound over a wide range. . In this case, the lead titanate (PbTiO ₃ ) -based ferroelectric thin film was formed by a sol-gel method under the same conditions as in the examples described later. Pt, which is widely used as an electrode material for a PZT ferroelectric thin film, is considered as the diffusion blocking barrier. The main reason why Pt is used as an electrode material is that F has a small lattice mismatch with the ferroelectric material, low reactivity, excellent high-temperature resistance, and a close-packed structure.
Self-orientation is strong because it has a CC (face-centered cubic lattice) structure.

Therefore, Pb (Ti _0.9 Al _0.1 ) O ₃ and T
Pt was used as a diffusion blocking layer at the iNi interface. That is, a Pt film is formed on a TiNi / SiO ₂ / Si substrate by a sputtering method, and Pb (Ti _0.9 Al _0.1 ) is formed thereon.
O ₃ was laminated. FIG. 8 shows a cross section of the film thus manufactured. According to this, Pb (Ti _0.9 Al _0.1 ) O ₃
A good interface is formed between the Pt layer and the Pt layer. However, near the boundary of the Pt / TiNi layer, a reaction phase composed of fine grains and pores is formed. As a result of X-ray analysis, such a layer structure has Ti in the Pt layer and TiNi near the boundary.
It is considered that the presence of excessive Ni in the layer caused the Ti on the TiNi side to diffuse into the Pt layer, forming a reaction phase.

FIG. 9 shows an X-ray diffraction result of the laminated film structure. Compared with FIG. 5 described later, the formation of TiO ₂ is suppressed, and Pb (Ti _0.9 A
l _0.1 ) It can be seen that it shows the peak of the perovskite structure of O ₃ . However, peaks of Ti ₃ Ni ₄ and TiNi ₃ and a strong peak of PtTi as shown in the figure were observed, which were in agreement with the results of microstructure observation indicating the diffusion of Ti into the Pt layer and the presence of the Ni excess layer. From the above, the TiNi layer and Pb
When a Pt layer was formed at the boundary of (Ti _0.9 Al _0.1 ) O ₃ , it was possible to prevent oxygen from diffusing into the TiNi layer, but it was found that Ti diffused into the Pt layer. Therefore, in this state, it was recognized that there was still a defect as a barrier for preventing diffusion.

Therefore, it is necessary to provide another barrier at the interface between the Pt layer and the TiNi layer. In order to prevent interdiffusion between Pt and TiNi, an attempt has been made to form a barrier layer of a Ti thin film by sputtering. Was. As a result,
No reaction layer was formed between the Ti / TiNi layers, showing a good interface, and the Pt / Ti layer was composed of Pb (Ti _0.9 A
l _0.1 ) It was found to be extremely effective as a diffusion preventing layer between the O ₃ and TiNi layers. The details of this result will be described again in Examples. In the above description, TiNi has been mainly described. However, the present invention can be generally applied to Ti-containing Ni-based alloys or Ni-containing Ti-based alloys, and the present invention includes these. In particular, the effect is remarkable in a metal-ceramic laminated thin film containing 30 at% or more of Ni as a main component in a Ni-based alloy thin film and 30 at% or more in a Ti-based alloy thin film. Although Pb (Ti _0.9 Al _0.1 ) O ₃ has been particularly described as an example of a ferroelectric substance, the present invention can be similarly applied to other PbTiO ₃ -based ferroelectric substances. Ti in the above
The barrier layers of the thin film and the Pt thin film are each 1 nm to 1 μm.
m. If it is less than 1 nm, there is no diffusion preventing effect as a barrier layer, and if it exceeds 1 μm, a Ti-containing Ni-based alloy such as the above-mentioned TiNi shape memory alloy or Ni
Since the function of the Ti-based alloy containing PbTiO ₃ and the function of the PbTiO ₃ -based ferroelectric cannot be effectively utilized, it is preferable to set the thickness within the above range.

As apparent from the above, a barrier layer for suppressing interdiffusion between a Ni-containing alloy thin film containing Ti or a Ti-based alloy thin film containing Ni and a PbTiO ₃ -based ferroelectric thin film is provided. The multilayer thin film of Ti on the Ni-based alloy thin film or Ti-based alloy thin film side and Pt on the PbTiO ₃ -based ferroelectric thin film side
It turns out that it is extremely effective in integrating the functions of the ceramic laminated thin film. In the above description and examples described later, the PbTiO ₃ -based ferroelectric thin film is formed by the sol-gel method, and the TiNi thin film and Ti
And the formation of the Pt barrier layer has been described using the sputtering method. The method for forming these thin films is based on the metal of the present invention.
This is a stable and effective method for forming a ceramic laminated thin film. However, similar phenomena occur even in other thin film forming methods, and do not prevent the use of other thin film forming methods. Therefore, in the present invention, a thin film forming method other than the above can be arbitrarily applied, and the present invention includes a thin film forming method other than the above.

[0016]

Examples and Comparative Examples Next, examples will be described. As the substrate, an SiO ₂ / Si substrate having a SiO ₂ layer formed by thermally oxidizing a Si (100) substrate material was used. This SiO ₂ / Si substrate, Ti-48at. %
Using a Ni alloy target, Using an F magnetron sputtering apparatus, input power 400 W, substrate temperature 450
At 1 ° C., a TiNi thin film having a thickness of 1 to 3 μm was prepared.

In order to prevent interdiffusion between Pt and TiNi, a barrier layer of a Ti thin film was formed on the laminated film composed of the TiNi / SiO ₂ / Si substrate by sputtering. The thickness of the barrier layer of this Ti thin film is 1 nm to 1 μm.
m in the range of 150 nm in this embodiment.
And Further, Ti / Ti having the above-mentioned barrier layer formed thereon
A barrier layer Pt thin film for a ferroelectric was formed on a laminated film composed of a Ni / SiO ₂ / Si substrate. Also in this case, the film thickness is similarly adjusted in the range of 1 nm to 1 μm.

Next, a thin film of a lead titanate ferroelectric was formed by a sol-gel method. As a starting material, lead acetate trihydrate, titanium isopropoxide, and aluminum isopropoxide were used, and the final composition was Pb (Ti _0.9 Al _0.1 ) O ₃
A precursor solution was prepared such that Using this solution 3
Spin coating at 000 rpm, drying and 480 ° C
The organic matter pyrolysis was repeated 20 times, and then the temperature was raised 30 times.
Calcination at 600-700 ° C for 1 minute at ° C / sec.
₂ Pb (Ti _0.9 A)
l _0.1 ) O ₃ thin film is converted to Pt / Ti / TiNi / SiO ₂ /
It was formed on a laminated thin film composed of a Si substrate.

The thus obtained Pb (Ti _0.9 A)
l _0.1 ) O ₃ / Pt / Ti / TiNi / SiO ₂ / Si
FIG. 1 shows the crystal structure of the Pb (Ti _0.9 Al _0.1 ) O ₃ surface of the laminated film composed of the substrate. In addition, Pb (Ti _0.9 A
FIG. 2 shows the cross-sectional structure of the l _0.1 ) O ₃ / Pt / Ti / TiNi laminated structure, and FIG. 3 shows the result of X-ray diffraction. In evaluating the thin film, the crystal structure of the thin film was examined by X-ray diffraction.
In addition, the observation and interpretation of the crystal structure are based on the energy dispersive X
A scanning electron microscope (SEM) equipped with a line analyzer was used. In order to investigate the dielectric properties, a diameter of 0.5
mm Au electrode was prepared by a vapor deposition method, and the relative dielectric constant was measured.

As shown in FIG. 1, the average grain size is about 50
It can be seen that the structure is dense in nm. this is
Pb (Ti_1-x Al_x ) O_Three Crystal structure similar to single-layer film
It is. As is clear from FIG. 2, Ti / TiN
No reaction layer was formed between the i-layers, indicating a good interface.
doing. Furthermore, from the X-ray diffraction results of FIG.
Since the B2 structure is dominant in the Pt / Ti layer,
Pb (Ti_0.9Al_0.1 ) O_Three Of diffusion between Ti and TiNi layers
It turns out that it is effective as a layer.

Next, the dielectric properties of the Pb (Ti _0.9 Al _0.1 ) O ₃ film were examined. The dielectric constant (ε) of the film was 281 and the dielectric loss (tan δ) was 0.011. This was a dielectric property equivalent to that of the conventional Pb (Ti _1-x Al _x ) O ₃ single-layer film. (Pb (T fabricated on Pt substrate
i _1-x Al x) reported cases of O ₃ thin film "T.Iijim and N.Sana
da, Proceedings of the 2nd International Meeting of
Pacific Rim CeramicScieties., In pres ”) As is clear from the above, by using a Pt / Ti layer as a barrier (diffusion blocking layer), a ferroelectric Pb (Ti _0.9 Al _0.1 ) O is formed on the TiNi film. _It can be seen that _three layers can be formed without compromising their dielectric properties.

Next, a comparative example will be described. Ti directly on Si substrate
Ni layer and Pb (Ti_0.9Al_0.1) O_Three Was formed.
Since the method of forming the thin film is the same as that of the embodiment,
The description is omitted. FIG. 4 shows Pb fired at 700 ° C. for 1 minute.
(Ti_0.9Al_0.1) O_Three / TiNi / Si laminated film break
Shows the surface texture. As is clear from this figure,
It can be seen that a large diffusion layer appears between the layers. X-ray component
Pb (Ti_0.9Al_0.1 ) O_Three Between the TiNi layer
It was found that there was a Ni-excess region.

FIG. 5 shows the results of X-ray diffraction of this laminated film.
You. TiNi B2 phase and Pb (Ti_{0. 9}Al_0.1) O_Three of
In addition to the perovskite phase, rutile (TiO_Two ), TiN
i_Three , Ti_ThreeNi_Four And pyrochlore phase (Pb_TwoTi_Two
O₆ ) Peak is seen. TiO_Two Is the T of the TiNi layer
i is Pb (Ti_0.9Al_0.1 ) O_Three At the interface of
It is thought that it was formed by reacting with element. And this conclusion
Fruit Pb (Ti_0.9Al_{0 .1}) O_Three Ni over between TiNi layer
It is expected that an extra diffusion layer was formed. Also, TiNi
From the result of X-ray analysis, the diffusion layer at the interface between
It is considered that Si diffused into the i-layer. Any expansion
In addition, TiNi thin film and Pb (Ti_0.9Al_0.1) O_Three 
Preferred because it affects the crystal structure and composition of the thin film
Absent.

As shown in the above comparative example, a Ni-based alloy thin film containing Ti, such as a TiNi shape memory alloy, or Ni
In the case of producing a function-combined material using a Ti-based alloy thin film containing PbTiO ₃ and a PbTiO ₃ -based ferroelectric thin film, even if both functional materials are laminated in this state, the functions that should be possessed are significantly reduced. I will. Therefore, it is understood that it is necessary to prevent mutual diffusion between both of them and the substrate. From this, as shown in the embodiment of the present invention, T
Ni-based alloy thin film containing i or Ti containing Ni
Between the system alloy thin film and PbTiO ₃ based ferroelectric thin film, the Ni-based alloy thin film or a Ti-based alloy thin film side Ti, and by kicking Bei the laminated thin film of Pt in PbTiO ₃ based ferroelectric thin film side, Mutual diffusion can be effectively suppressed. As a result, an excellent metal-ceramic laminated thin film utilizing both functional materials can be obtained. It should be noted that some of the materials described in the above embodiments are merely examples, and various modifications can be made without departing from the spirit of the present invention. The present invention includes all of them.

[0025]

According to the present invention, a new functional material is obtained by combining the functions of a Ti-containing Ni-based alloy such as a TiNi shape memory alloy or a Ni-containing Ti-based alloy with a PbTiO ₃ -based ferroelectric. And a metal-ceramic laminated thin film capable of forming an effective barrier layer between both functional materials to prevent interdiffusion and also effectively prevent diffusion between the substrate and the electrode material. And a method for forming the same thin film. In addition, in the present invention, both the dielectric constant and the dielectric loss are equivalent to those of a single-layer ferroelectric film, and a metal capable of easily obtaining a functional element in which such ferroelectric characteristics and shape memory characteristics are combined is easily obtained. -It has the feature that a ceramic laminated thin film can be provided.

[Brief description of the drawings]

FIG. 1 is a graph showing Pt / Ti / TiNi / SiO ₂ /
5 is a microscope (SEM) photograph showing a single phase of perovskite of Pb (Ti _0.9 Al _0.1 ) O ₃ on a laminated film made of Si.

FIG. 2 shows Pb fired at 600 ° C. for 1 minute.
_{(Ti 0.9 Al 0.1) O 3} / Pt / Ti / TiNi microscope of the cross section of the laminated film (SEM) photographs.

FIG. 3 is an X-ray diffraction pattern of the laminated structure of FIG.

FIG. 4 shows Pb fired at 700 ° C. for 1 minute.
_{(Ti 0.9 Al 0.1) O 3} / TiNi / Si multilayer film of the cross section of the microscope (SEM) photographs.

FIG. 5 is an X-ray diffraction pattern of the laminated structure of FIG.

FIG. 6 shows TiNi / S formed at 450 ° C.
5 is a microscope (SEM) photograph of a cross section of the iO ₂ / Si film.

FIG. 7 is an X-ray diffraction pattern of the laminated structure of FIG.

FIG. 8 shows Pb fired at 600 ° C. for 1 minute.
_{(Ti 0.9 Al 0.1) O 3} / Pt / TiNi microscope of the cross section of the laminated film (SEM) photographs.

FIG. 9 is an X-ray diffraction pattern of the laminated structure of FIG.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01B 3/12 302 H01B 3/12 302 H01L 27/04 H01L 27/10 451 21/822 27/04 C 27/10 451 27 / 10 651 27/108 21/8242 // C22K 1:00 (72) Inventor Toshihiko Abe 4-2-1 Kutake, Miyagino-ku, Sendai, Miyagi Prefecture Inside Tohoku Institute of Technology

Claims (11)

[Claims] 1. A Ni-based alloy thin film containing Ti or N
A metal-ceramic laminated thin film comprising: a barrier layer for suppressing interdiffusion on a Ti-based alloy thin film containing i; and a PbTiO ₃ -based ferroelectric thin film on the barrier layer. 2. A Ni-based alloy thin film containing Ti or N
As a barrier layer for suppressing interdiffusion between the Ti-based alloy thin film containing i and the PbTiO ₃ -based ferroelectric thin film, T
A metal-ceramic multilayer thin film comprising a Pt multilayer thin film on the side of a PbTiO ₃ -based ferroelectric thin film. 3. The metal-ceramic multilayer thin film according to claim 1, wherein the Ni-based alloy thin film or the Ti-based alloy thin film is a TiNi alloy having a Ti content of 40 to 60 at% and a balance of Ni. 4. The metal-ceramic laminated thin film according to claim 2, wherein the barrier layers of the Ti thin film and the Pt thin film each have a thickness of 1 nm to 1 μm. 5. The Ni-based alloy thin film according to claim 1, wherein Ni as a main component is not less than 30 at%, and Ti as a main component is not less than 30 at% in the Ti-based alloy thin film. 5. The metal-ceramic laminated thin film according to 4. 6. The metal-ceramic laminated thin film according to claim 1, wherein the metal-ceramic laminated thin film is laminated on a Si substrate having a SiO ₂ layer formed on a surface thereof. 7. The PbTiO ₃ -based ferroelectric thin film is made of PZ
_{T (Pb (Zr 1-x} Ti x) O 3, x <1) system strong metal according to each of claims 1 to 6, characterized in that a dielectric thin film - ceramic multilayer thin film. 8. On a substrate, 1 to 3
After forming a Ni-based alloy thin film containing Ti or a Ti-based alloy thin film containing Ni, a 1 nm-1 μm thick Ti thin film and P
t thin film is formed by sputtering in this order, and a lead titanate-based ferroelectric thin film is further formed on this barrier layer by sol.
A method for forming a metal-ceramic laminated thin film, characterized by being formed by a gel method. 9. Ti40 to 60a of 1 to 3 μm on a substrate
The method for forming a metal-ceramic multilayer thin film according to claim 8, wherein the TiNi alloy thin film having t% and the balance of Ni is formed by sputtering. 10. The method for forming a metal-ceramic multilayer thin film according to claim 8, wherein a Si substrate is used as the substrate. 11. The surface of a Si substrate is previously subjected to thermal oxidation to form S
method of forming a ceramic multilayer thin film - metal according to claim 10, characterized in that to form the iO ₂ layers.