JPH1126521A - Apparatus for evaluating solid state imaging device - Google Patents
Apparatus for evaluating solid state imaging deviceInfo
- Publication number
- JPH1126521A JPH1126521A JP9182004A JP18200497A JPH1126521A JP H1126521 A JPH1126521 A JP H1126521A JP 9182004 A JP9182004 A JP 9182004A JP 18200497 A JP18200497 A JP 18200497A JP H1126521 A JPH1126521 A JP H1126521A
- Authority
- JP
- Japan
- Prior art keywords
- light
- state imaging
- imaging device
- solid
- solid state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、固体撮像素子の受
光特性を評価する固体撮像素子の評価装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device evaluation apparatus for evaluating the light receiving characteristics of a solid-state imaging device.
【0002】[0002]
【従来の技術】近年、固体撮像素子の光学サイズの縮小
化とともに、集光を行う光学レンズと固体撮像素子との
距離が縮まってきている。図3は従来の固体撮像素子の
評価装置を説明する模式断面図である。すなわち、この
評価装置1’は、発光源23aから出射された光を平行
光に変換するレンズ23bと、平行光を拡散させる拡散
板23cと、固体撮像素子が形成されたウエハ10の電
極パッドと接触するプローブ針21aを備えているプロ
ーブカード21と、プローブカード21から得た電気信
号に基づき所定の特性測定を行う回路を備えた測定用基
板22とを備えた構成となっている。2. Description of the Related Art In recent years, as the optical size of a solid-state image sensor has been reduced, the distance between an optical lens for condensing light and the solid-state image sensor has been reduced. FIG. 3 is a schematic cross-sectional view illustrating a conventional solid-state imaging device evaluation device. That is, the evaluation device 1 ′ includes a lens 23b that converts light emitted from the light emitting source 23a into parallel light, a diffusion plate 23c that diffuses the parallel light, and an electrode pad of the wafer 10 on which the solid-state imaging device is formed. The probe card 21 includes a probe needle 21a that comes into contact with the probe card 21a, and a measurement substrate 22 including a circuit that performs a predetermined characteristic measurement based on an electric signal obtained from the probe card 21.
【0003】この評価装置1’においては、拡散板23
cによって斜め方向に光を生成し、固体撮像素子に対し
て斜め方向の光を照射できるようになっている。[0003] In this evaluation device 1 ', the diffusing plate 23
Light is generated in an oblique direction by c, so that the solid-state imaging device can be irradiated with light in an oblique direction.
【0004】また、特開平3−190255号公報や特
開平8−227923号公報では、光源と固体撮像素子
との光路を複数の光路に分割して、各光路に対応する固
体撮像素子の受光部各々に光を照射するようにし、光の
入射角度を狭く限定する技術が開示されている。In Japanese Patent Application Laid-Open Nos. Hei 3-190255 and Hei 8-227923, an optical path between a light source and a solid-state imaging device is divided into a plurality of optical paths, and a light-receiving portion of the solid-state imaging device corresponding to each optical path. There is disclosed a technique in which light is applied to each of the light sources and the incident angle of the light is limited to a small value.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、固体撮
像素子の光学サイズの縮小化やこれを組み込む撮像装置
の小型化とともに光学レンズと固体撮像素子との距離が
縮まってきている。このため、実際の固体撮像素子にお
いて、その受光面の中央部分では平行光の成分が多く、
周辺部分では斜め光の成分が多くなっている。つまり、
上記のような固体撮像素子の評価装置では、実際の光学
系によって生成される光の成分に十分な対応がとれてい
ないため、正確な特性評価を行えないという問題が生じ
ている。However, the distance between the optical lens and the solid-state imaging device has been reduced with the reduction in the optical size of the solid-state imaging device and the miniaturization of an imaging device incorporating the same. For this reason, in an actual solid-state imaging device, there are many parallel light components in the central portion of the light receiving surface,
In the peripheral part, the oblique light component is increased. That is,
In the evaluation apparatus for a solid-state imaging device as described above, there is a problem that accurate characteristics cannot be evaluated because the components of light generated by an actual optical system are not sufficiently handled.
【0006】[0006]
【課題を解決するための手段】本発明はこのような課題
を解決するために成された固体撮像素子の評価装置であ
る。すなわち、本発明は、固体撮像素子の電極パッドに
接触するプローブ針を備えているプローブカードと、固
体撮像素子の受光面に対向して配置される光源と、光源
と固体撮像素子との間に配置され、光源から出射される
光を通過して固体撮像素子へ入射するにあたり、固体撮
像素子の受光面における中央部分から周辺部分へ向かう
に従い受光面に対する略垂直方向の光量より斜め方向の
光量を強くする光学手段とを備えている固体撮像素子の
評価装置である。SUMMARY OF THE INVENTION The present invention is an apparatus for evaluating a solid-state image sensor which has been made to solve such a problem. That is, the present invention provides a probe card including a probe needle that contacts an electrode pad of a solid-state imaging device, a light source disposed to face a light receiving surface of the solid-state imaging device, and a light source and the solid-state imaging device. When the light is emitted from the light source and is incident on the solid-state imaging device, the amount of light in the oblique direction is smaller than the amount of light in the direction substantially perpendicular to the light-receiving surface as going from the central portion to the peripheral portion of the light-receiving surface of the solid-state imaging device. This is an evaluation device for a solid-state imaging device including an optical unit for strengthening.
【0007】本発明では、光源から出射される光を光学
手段に通すことで、固体撮像素子の受光面における中央
部分から周辺部分に向かうに従い受光面に対する略垂直
方向の光量より斜め方向の光量を強くするようにしてい
る。これにより、実際の使用状態での受光面位置に対応
した光の入射角度およびその光量と、評価時における受
光面位置に対応した光の入射角度およびその光量とを合
わせることができるようになる。In the present invention, the light emitted from the light source is passed through the optical means, so that the amount of light in the oblique direction is smaller than the amount of light in the direction substantially perpendicular to the light receiving surface from the central portion to the peripheral portion of the light receiving surface of the solid-state image sensor. I try to be stronger. This makes it possible to match the incident angle and the light amount of the light corresponding to the light receiving surface position in the actual use state with the light incident angle and the light amount corresponding to the light receiving surface position at the time of evaluation.
【0008】[0008]
【発明の実施の形態】以下に、本発明における固体撮像
素子の評価装置の実施の形態を図に基づいて説明する。
図1は本発明の固体撮像素子の評価装置における主要部
を説明する模式断面図である。図2は評価装置の全体構
成を説明する図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of an apparatus for evaluating a solid-state image sensor according to the present invention.
FIG. 1 is a schematic cross-sectional view illustrating a main part of a solid-state imaging device evaluation apparatus according to the present invention. FIG. 2 is a diagram illustrating the overall configuration of the evaluation device.
【0009】図2に示すように、評価装置1としては、
主としてプローバー2と測定器3とを組み合わせた構成
となっている。このうちプローバー2は、固体撮像素子
(図示せず)が形成されたウエハ10の上に配置するプ
ローブカード21と、プローブカード21を取り付ける
測定用基板22と、固体撮像素子へ光を照射する光源2
3とから構成され、測定器3はプローバー2、測定用基
板22および光源23を制御する制御系を備えた構成と
なっている。As shown in FIG. 2, the evaluation device 1 includes:
The configuration is mainly a combination of the prober 2 and the measuring device 3. The prober 2 includes a probe card 21 disposed on the wafer 10 on which a solid-state imaging device (not shown) is formed, a measurement substrate 22 on which the probe card 21 is mounted, and a light source for irradiating the solid-state imaging device with light. 2
The measuring device 3 includes a control system for controlling the prober 2, the measurement substrate 22, and the light source 23.
【0010】また、図1に示すように、光源23にはラ
ンプから成る発光源23aと、発光源23aから出射さ
れた光を平行光に変換するレンズ23bとが設けられて
いる。さらに、プローブカード21にはプローブ針21
aが取り付けられており、このプローブ針21aを測定
対象のウエハ10に形成された固体撮像素子の電極パッ
ド(図示せず)に接触させることで信号の入出力を行
う。As shown in FIG. 1, the light source 23 is provided with a light source 23a composed of a lamp and a lens 23b for converting light emitted from the light source 23a into parallel light. Further, the probe card 21 has a probe needle 21.
The probe needle 21a is brought into contact with an electrode pad (not shown) of the solid-state imaging device formed on the wafer 10 to be measured, and a signal is input / output.
【0011】また、本実施形態における評価装置1で
は、光源23から出射される平行光を受けて、ウエハ1
0に形成された固体撮像素子の受光面における中央部分
から周辺部分へ向かうに従い受光面に対する略垂直方向
の光量より斜め方向の光量を強くする光学系21bを備
えている。The evaluation apparatus 1 according to the present embodiment receives the parallel light emitted from the light source 23 and
An optical system 21b is provided to increase the amount of light in the oblique direction from the amount of light in the direction substantially perpendicular to the light receiving surface as going from the central portion to the peripheral portion of the light receiving surface of the solid-state imaging device formed at 0.
【0012】この光学系21bとしては、実際の固体撮
像素子を用いた撮像装置で組み込まれるレンズ系と同じ
ものまたは同様な光学特性を備えたものを使用する。ま
た、光学系21bはプローブカード21にアングル21
cを介して取り付けられており、交換可能となってい
る。As the optical system 21b, an optical system having the same or similar optical characteristics as a lens system incorporated in an imaging apparatus using an actual solid-state imaging device is used. Further, the optical system 21 b is provided with an angle 21
c and is replaceable.
【0013】すなわち、評価を行う固体撮像素子で使用
するレンズ系と同じもしくは同様な光学特性のものを適
宜使用できるよう、アングル21cによって光学系21
bが着脱自在に取り付けられている。なお、光学系21
bの交換を行うにあたり、プローブカード21とともに
取り替えを行うものであってもよい。That is, the angle 21c allows the optical system 21 to have an optical system having the same or similar optical characteristics as the lens system used in the solid-state image sensor to be evaluated.
b is detachably attached. The optical system 21
When exchanging b, it may be exchanged with the probe card 21.
【0014】本実施形態における評価装置1で固体撮像
素子の特性評価を行うには、先ず、評価対象となる固体
撮像素子が形成されたウエハ10を図2に示すプローバ
ー2にセットし、そのウエハ10の上方に測定用基板2
2およびプローブカード21を配置する。In order to evaluate the characteristics of the solid-state imaging device by the evaluation apparatus 1 in this embodiment, first, the wafer 10 on which the solid-state imaging device to be evaluated is formed is set on the prober 2 shown in FIG. Measurement substrate 2 above 10
2 and the probe card 21 are arranged.
【0015】なお、このプローブカード21には、先に
説明したような光学系21b(図1参照)が取り付けら
れているものとする。次に、プローブカード21とウエ
ハ10との位置合わせを行い、評価対象となる固体撮像
素子の電極パッドにプローブ針21aを接触させる。It is assumed that the optical system 21b (see FIG. 1) described above is attached to the probe card 21. Next, the probe card 21 and the wafer 10 are aligned, and the probe needle 21a is brought into contact with the electrode pad of the solid-state imaging device to be evaluated.
【0016】次いで、特性測定を行うため、図1に示す
光源23の発光源23aから光を出射し、レンズ23b
を介して平行光を出射する。この平行光は光学系21b
によって実際の撮像装置で使用されるものと同様な光量
分布となって評価対象の固体撮像素子へ照射される。Next, in order to measure the characteristics, light is emitted from the light source 23a of the light source 23 shown in FIG.
, And emits parallel light. This parallel light is transmitted to the optical system 21b.
As a result, a light amount distribution similar to that used in an actual imaging device is emitted to the solid-state imaging device to be evaluated.
【0017】すなわち、この光学系21bにより、固体
撮像素子の受光面における中央部分では受光面に対して
略垂直な方向の光の成分が多く、周辺部分へ向かうに従
い受光面に対して斜め方向の光の成分が多くなるよう照
射される。That is, due to the optical system 21b, the central part of the light receiving surface of the solid-state image pickup device has a large amount of light components in a direction substantially perpendicular to the light receiving surface, and the light components in the oblique direction with respect to the light receiving surface toward the peripheral portion. Irradiation is performed to increase the light component.
【0018】次に、このような光学系21bを介して光
を照射した状態で、固体撮像素子の電極パッドから出力
される電気信号(光電変換によって得られた信号)を予
め電極パッドに接触させておいたプローブ針21aを介
して取り込み、プローブカード21から測定用基板22
へ送る。Next, an electric signal (signal obtained by photoelectric conversion) output from the electrode pad of the solid-state imaging device is brought into contact with the electrode pad in advance in a state where light is irradiated through the optical system 21b. The probe card 21 is taken in through the probe needle 21a, and the measurement substrate 22 is
Send to
【0019】取り込まれた電気信号は測定値として測定
用基板22から図2に示す測定器3に送られ、ここで所
定の演算によって特性評価が行われる。The fetched electric signal is sent as a measured value from the measuring board 22 to the measuring device 3 shown in FIG. 2, where the characteristic is evaluated by a predetermined calculation.
【0020】また、別の固体撮像素子の特性評価を行う
場合には、図2に示すプローバー2に評価対象の固体撮
像素子が形成された別のウエハをセットする。そして、
このウエハの上方に測定用基板22およびプローブカー
ド21を配置する。この際、配置するプローブカード2
1には、評価対象となる固体撮像素子に適用される実際
のレンズ系と同じものまたは同様な光学特性を備えた光
学系21bをセットする。または、このような光学系2
1bが予めセットされたプローブカード21を配置する
ようにする。To evaluate the characteristics of another solid-state imaging device, another wafer on which the solid-state imaging device to be evaluated is formed is set on the prober 2 shown in FIG. And
The measurement substrate 22 and the probe card 21 are arranged above the wafer. At this time, the probe card 2
An optical system 21b having the same or similar optical characteristics as the actual lens system applied to the solid-state imaging device to be evaluated is set to 1. Or such an optical system 2
The probe card 21 in which 1b is set in advance is arranged.
【0021】その後は先に説明した手順と同様に、光源
23から光を出射し、セットした光学系21bを介して
実際の撮像装置で使用されるものと同様な光量分布の光
を固体撮像素子へ照射する。そして、固体撮像素子の電
極パッドから出力される電気信号に基づき測定器3(図
2参照)で特性評価を行う。Thereafter, in the same manner as described above, light is emitted from the light source 23, and the light having the same light amount distribution as that used in the actual image pickup device is transmitted through the set optical system 21b to the solid-state image pickup device. Irradiation. Then, based on the electric signal output from the electrode pad of the solid-state imaging device, the characteristic is evaluated by the measuring device 3 (see FIG. 2).
【0022】[0022]
【発明の効果】以上説明したように、本発明によれば次
のような効果がある。すなわち、光学手段によって光源
から出射される光を固体撮像素子の受光面における中央
部分から周辺部分に向かうに従い受光面に対して斜め方
向の光量を強くしているため、実際の使用状態での光量
分布に合わせることができ、正確な特性評価を行うこと
が可能となる。As described above, the present invention has the following effects. In other words, the amount of light emitted from the light source by the optical means is increased in an oblique direction with respect to the light receiving surface as it goes from the central part to the peripheral part of the light receiving surface of the solid-state imaging device. It can be adjusted to the distribution, and accurate characteristic evaluation can be performed.
【図1】本実施形態における評価装置の主要部を説明す
る模式断面図である。FIG. 1 is a schematic cross-sectional view illustrating a main part of an evaluation device according to an embodiment.
【図2】評価装置の全体構成を説明する図である。FIG. 2 is a diagram illustrating an overall configuration of an evaluation device.
【図3】従来例を説明する模式断面図である。FIG. 3 is a schematic sectional view illustrating a conventional example.
1…評価装置、2…プローバー、3…測定器、21…プ
ローブカード、21b…光学系、22…測定用基板、2
3…光源DESCRIPTION OF SYMBOLS 1 ... Evaluation apparatus, 2 ... Prober, 3 ... Measuring instrument, 21 ... Probe card, 21b ... Optical system, 22 ... Measurement board, 2
3. Light source
Claims (2)
ローブ針を備えているプローブカードと、 前記固体撮像素子の受光面に対向して配置される光源
と、 前記光源と前記固体撮像素子との間に配置され、前記光
源から出射される光を通過して前記固体撮像素子へ入射
するにあたり、前記固体撮像素子の受光面における中央
部分から周辺部分へ向かうに従い前記受光面に対する略
垂直方向の光量より斜め方向の光量を強くする光学手段
とを備えていることを特徴とする固体撮像素子の評価装
置。A probe card having a probe needle that contacts an electrode pad of the solid-state imaging device; a light source arranged to face a light-receiving surface of the solid-state imaging device; and a light source and the solid-state imaging device. When the light emitted from the light source is incident on the solid-state imaging device through the light emitted from the light source, the amount of light in a direction substantially perpendicular to the light-receiving surface of the solid-state imaging device from the central portion to the peripheral portion thereof An evaluation device for a solid-state imaging device, comprising: an optical unit for increasing the amount of light in an oblique direction.
着脱自在に取り付けられていることを特徴とする請求項
1記載の固体撮像素子の評価装置。2. The apparatus according to claim 1, wherein the optical unit is detachably attached to the probe card.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9182004A JPH1126521A (en) | 1997-07-08 | 1997-07-08 | Apparatus for evaluating solid state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9182004A JPH1126521A (en) | 1997-07-08 | 1997-07-08 | Apparatus for evaluating solid state imaging device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1126521A true JPH1126521A (en) | 1999-01-29 |
Family
ID=16110647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9182004A Withdrawn JPH1126521A (en) | 1997-07-08 | 1997-07-08 | Apparatus for evaluating solid state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1126521A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004053451A1 (en) * | 2002-12-06 | 2004-06-24 | Inter Action Corporation | Instrument for testing solid-state imaging device |
JP2006064441A (en) * | 2004-08-25 | 2006-03-09 | Yokogawa Electric Corp | Light source for inspection and ic tester |
JP2006349522A (en) * | 2005-06-16 | 2006-12-28 | Fujifilm Holdings Corp | Method for testing solid-state image sensor and apparatus therefor |
JP2007150033A (en) * | 2005-11-29 | 2007-06-14 | Japan Electronic Materials Corp | Optical device test unit |
WO2008059767A1 (en) * | 2006-11-15 | 2008-05-22 | Japan Electronic Materials Corp. | Optical device inspecting apparatus |
JP2009162846A (en) * | 2007-12-28 | 2009-07-23 | Nikon Corp | Element inspection light source, and device and method for inspecting element |
JP2010192741A (en) * | 2009-02-19 | 2010-09-02 | Micronics Japan Co Ltd | Electrical connection device |
JP2011254528A (en) * | 2005-09-29 | 2011-12-15 | Cao Jin Science&Technology Co Ltd | Method of manufacturing imaging module of wafer level, and assembling facility |
JP2014021486A (en) * | 2012-07-13 | 2014-02-03 | Mjc Probe Inc | Optical measuring device |
US9201098B2 (en) | 2012-07-13 | 2015-12-01 | Mpi Corporation | High frequency probe card |
US9244018B2 (en) | 2012-07-13 | 2016-01-26 | Mpi Corporation | Probe holding structure and optical inspection device equipped with the same |
-
1997
- 1997-07-08 JP JP9182004A patent/JPH1126521A/en not_active Withdrawn
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004053451A1 (en) * | 2002-12-06 | 2004-06-24 | Inter Action Corporation | Instrument for testing solid-state imaging device |
JP2006064441A (en) * | 2004-08-25 | 2006-03-09 | Yokogawa Electric Corp | Light source for inspection and ic tester |
JP4513059B2 (en) * | 2004-08-25 | 2010-07-28 | 横河電機株式会社 | IC tester |
JP2006349522A (en) * | 2005-06-16 | 2006-12-28 | Fujifilm Holdings Corp | Method for testing solid-state image sensor and apparatus therefor |
JP2011254528A (en) * | 2005-09-29 | 2011-12-15 | Cao Jin Science&Technology Co Ltd | Method of manufacturing imaging module of wafer level, and assembling facility |
JP2007150033A (en) * | 2005-11-29 | 2007-06-14 | Japan Electronic Materials Corp | Optical device test unit |
WO2008059767A1 (en) * | 2006-11-15 | 2008-05-22 | Japan Electronic Materials Corp. | Optical device inspecting apparatus |
JP2009162846A (en) * | 2007-12-28 | 2009-07-23 | Nikon Corp | Element inspection light source, and device and method for inspecting element |
JP2010192741A (en) * | 2009-02-19 | 2010-09-02 | Micronics Japan Co Ltd | Electrical connection device |
JP2014021486A (en) * | 2012-07-13 | 2014-02-03 | Mjc Probe Inc | Optical measuring device |
US9201098B2 (en) | 2012-07-13 | 2015-12-01 | Mpi Corporation | High frequency probe card |
US9244018B2 (en) | 2012-07-13 | 2016-01-26 | Mpi Corporation | Probe holding structure and optical inspection device equipped with the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5283266B2 (en) | Inspection device for optical devices | |
JPH1126521A (en) | Apparatus for evaluating solid state imaging device | |
US6094263A (en) | Visual examination apparatus and visual examination method of semiconductor device | |
JPH0314124B2 (en) | ||
JPH0617777B2 (en) | Imaging method of printed wiring board | |
TW201022677A (en) | CIS circuit test probe card | |
JPS60310A (en) | Measuring device for surface structure, particularly, roughness | |
JP3628344B2 (en) | Semiconductor inspection equipment | |
JPH0674968B2 (en) | Optical measuring device | |
JP3375752B2 (en) | LED chip optical characteristics measurement sensor | |
JP3114410B2 (en) | Image sensor test method | |
JPH0694515A (en) | Light divergence characteristic measuring apparatus | |
US6366101B1 (en) | Method for laser analysis from the back side an electronic circuit formed on the front side of a semiconductor | |
CN111122924B (en) | Probe alignment apparatus | |
KR100913490B1 (en) | Apparatus for inspecting electrical condition of image sensor | |
JPH1048130A (en) | Refractive index measuring method and apparatus therefor | |
JP4214934B2 (en) | Orientation meter | |
JP2007085739A (en) | Orientation meter | |
JPH07280552A (en) | Distance measuring apparatus | |
JPH09113411A (en) | Light-receiving apparatus | |
JPH06230018A (en) | Lighting device for space filter type speedmeter | |
JPH0721427B2 (en) | Diffuse reflectance measuring device | |
JPH1062344A (en) | Method of measuring refractive index and device therefor | |
JPS58193426A (en) | Light detector | |
JPS58111335A (en) | Wafer prober for optical element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040427 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050510 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20050708 |