JPH11238925A - Magnetic element, magnetic part using the same and electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic element, whose magnetic resistance change rate is large and whose saturation magnetic field is small and whose resistance value is small, even if it is worked into a fine element form. SOLUTION: A stacked film having the ferromagnetic layer 13 (or ferromagnetic layer which is cut by a dielectric) of at least one layer, which is sandwiched by dielectric layers 12 and 14, and first and second metal layers 11 and 15 which are stacked/arranged with the ferromagnetic layer 13 (or ferromagnetic layer cut by a dielectric) through the dielectric layers 12 and 14 is provided. At least one of the first and second metal layers 11 and 15 is constituted of a ferromagnetic body, and the stacked film shows spin polarization tunnel effect through a discrete level formed in the ferromagnetic layer 13 (or ferromagnetic layer cut by a dielectric). The magnetic element shows the magnetic resistance change rate of not less than 30% at room temperature, for example.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic element including a ferromagnetic material and a dielectric material, and various magnetic components and electronic devices using the same, such as a magnetic head, a magnetic sensor, a magnetic storage element, and a diode element. Related to parts.

[0002]

2. Description of the Related Art The magnetoresistance effect is a phenomenon in which the electric resistance changes when a magnetic field is applied to a certain kind of magnetic substance. Such a magnetoresistive element utilizing the magnetoresistive effect (hereinafter, referred to as an MR element) is used for a magnetic head, a magnetic sensor, and the like, and a magnetoresistive effect memory and the like have been proposed. Such an MR element is required to have a high sensitivity to an external magnetic field and a high response speed.

[0003] An MR element using a ferromagnetic material has characteristics such as excellent temperature stability and a wide operating temperature range, and a thin film of a ferromagnetic alloy such as a NiFe alloy has been conventionally used. . However, its magnetoresistance ratio is 2-3%
Due to the small size, there is a problem that a magnetic head using the same cannot provide sufficient sensitivity.

On the other hand, in recent years, a laminated film in which a ferromagnetic layer and a non-magnetic metal layer are laminated with a period of several nm has attracted attention as a material exhibiting a giant magnetoresistance effect depending on the spin direction.
For example, Fe / Cr artificial lattice film (Phys. Rev. Lett. 61, 2
472 (1988)), Co / Cu artificial lattice film (J. Mag. Mag. Mate
r.94, L1 (1991)), etc., in which the interaction between ferromagnetic layers is antiferromagnetically coupled. However, the metal artificial lattice film using the antiferromagnetic coupling between the ferromagnetic layers has a problem that the saturation magnetic field is large and the hysteresis is very large because the antiferromagnetic exchange coupling constant is large.

In order to reduce the saturation magnetic field, the ferromagnetic layer /
By applying an exchange bias to one of the ferromagnetic layers of the sandwich laminated film of the non-magnetic layer / ferromagnetic layer to fix the magnetization and inverting the magnetization of the other ferromagnetic layer by an external magnetic field,
A so-called spin valve film that changes the relative angle between the magnetization directions of two ferromagnetic layers has been developed. However, since the spin-valve film has a low resistance of the laminated film and a small output voltage, it is necessary to increase the sense current in order to obtain a large output voltage. Therefore, a magnetic head using a spin valve film has problems such as electromigration. Even when a memory using an MR element is taken into consideration, there is a similar problem that a large output voltage cannot be obtained when a nonmagnetic metal is used as the intermediate layer.

[0006] Further, if a so-called perpendicular magnetoresistance effect, in which a current flows through a multilayer film (metal artificial lattice film) in a direction perpendicular to the film surface, is used, an extremely large magnetoresistance change rate can be obtained. (Phys. Rev. Let
t.66, 3060 (1991)). However, in this case, since the current path is small and the resistance is small because each layer is made of metal, there is a problem that the magnetoresistance effect at room temperature cannot be measured unless fine processing is performed to a submicron or less.

Further, unlike the above-described multilayer structure,
It has been found that a so-called granular magnetic film in which magnetic ultrafine particles are dispersed in a nonmagnetic metal matrix also exhibits a giant magnetoresistance effect based on spin-dependent conduction (Phys. Rev. Lett. 68, 3745 ( 1992)). In such a granular magnetic film, when the magnetic field is not applied, the spin of each magnetic ultrafine particle is oriented in an irregular direction due to the properties of the magnetic ultrafine particles, so that the electrical resistance is large. When the magnetic field is aligned in the direction of the magnetic field, the resistance decreases, and as a result, a spin-dependent magnetoresistance effect is exhibited. However, since the magnetic ultrafine particles in this case exhibit superparamagnetism, there is a problem that the saturation magnetic field is essentially very large.

On the other hand, a giant magnetoresistance effect based on a ferromagnetic tunnel effect, which has a different mechanism from spin-dependent scattering, has been found. In a sandwich film in which an insulating layer is inserted between two ferromagnetic metal layers, a current flows vertically to the film surface and the tunnel current of the insulating layer is used.For example, a ferromagnetic metal layer having a small coercive force is used. When only the spin of the ferromagnetic metal layer is inverted, a giant magnetoresistance effect is obtained because the tunnel current is greatly different between when the spins of the two ferromagnetic metal layers are parallel to each other and when they are antiparallel.

Although such a ferromagnetic tunnel junction device has a simple structure and can obtain a relatively large magnetoresistance change rate, when it is processed into a micro device of about several μm ² , the resistance value becomes as large as MΩ, and the response is increased. It has problems in speed, high frequency characteristics, and the like. Further, there is a problem that when the value of the current flowing through the ferromagnetic tunnel junction element is increased in order to obtain a desired output voltage value, the magnetoresistance change rate is greatly reduced (Phys. Rev. Lett. 74, 3273). (1995)).

It is theoretically expected that a large MR ratio can be obtained due to the spin-polarized resonance tunnel effect in a double tunnel junction having an Fe / Ge / Fe / Ge / ferromagnetic structure (Phys. Rev.). B56, 5484 (1997)). However, this is a result at cryogenic temperature (8K), and it is not expected that this phenomenon will occur at room temperature, and it is actually
There is no report on the fabrication of a double tunnel junction.

Further, Al ₂ O ₃ / granular (Co
A tunnel junction in which a fine particle-Al ₂ O ₃ matrix / Al ₂ O ₃ structure is sandwiched between magnetic layers has been reported (Phys. R
ev.B56, R5747 (1997)). However, in this case, the Co fine particles are as small as several nanometers, are superparamagnetic at 120 K or higher, and have irregular spins. Therefore, even at a low temperature, the granular layer does not spin-switch unless a large magnetic field of 0.5 T or higher is applied.
Therefore, no spin-polarized resonance tunneling effect is observed even when a voltage is applied.

[0012]

As described above, in a magnetoresistive element utilizing spin-dependent scattering, a metal artificial lattice film utilizing antiferromagnetic coupling suffers from the problem that the saturation magnetic field and hysteresis are extremely large. Have. In addition, the spin valve film has a problem that a large output voltage cannot be obtained unless a large sense current flows, and electromigration is likely to occur. Furthermore, the granular magnetic film has a problem that the saturation magnetic field is essentially large because the magnetic ultrafine particles exhibit superparamagnetism.

On the other hand, a ferromagnetic tunnel junction device has a characteristic that a relatively large magnetoresistance change rate can be obtained at room temperature and a small saturation magnetic field, but has a large resistance of MΩ when processed into a fine device. Therefore, there is a problem in terms of response speed and high-frequency characteristics, and there is a problem that when a current value flowing through the element to obtain a desired output voltage value is increased, a magnetoresistance change rate is greatly reduced. I have.

The present invention has been made to address such problems, and has a large rate of change in magnetoresistance and a small saturation magnetic field, and has a small resistance value even when processed into a fine element shape. To provide a magnetic element capable of obtaining a large output voltage (or output current) with a small decrease in the magnetoresistance ratio even if the current (or voltage) value supplied to the element is increased, and a magnetic component and an electronic component using the same. The purpose is.

[0015]

According to a first aspect of the present invention, a first magnetic element includes at least one ferromagnetic layer and a dielectric disposed so as to sandwich the ferromagnetic layer. A laminated film having a body layer and first and second metal layers laminated on the ferromagnetic layer via the dielectric layer, wherein at least one of the first and second metal layers is provided. Is made of a ferromagnetic material, and the laminated film exhibits a spin-polarized tunnel effect via discrete levels formed in the ferromagnetic layer.

According to a second aspect of the present invention, the second magnetic element includes a ferromagnetic layer in which a ferromagnetic material is divided by a dielectric, a dielectric layer disposed so as to sandwich the magnetic layer, A laminated film having first and second metal layers laminated with the ferromagnetic layer via the dielectric layer, wherein at least one of the first and second metal layers is a ferromagnetic material And the laminated film exhibits a spin-polarized tunnel effect via discrete levels formed in the ferromagnetic layer.

In a multiple or more double ferromagnetic tunnel junction formed by sandwiching a ferromagnetic layer or a ferromagnetic layer in which a ferromagnetic material is separated by a dielectric, the ferromagnetic layer is separated by a ferromagnetic layer. When a level is formed, a spin-polarized tunnel effect is obtained via the discrete level. And a large magnetoresistance change rate (MR change rate) can be obtained by this spin polarization tunnel effect. As described above, the present inventors have actually fabricated a multi-ferromagnetic tunnel junction, and as a result, at room temperature, via a discrete level formed in a ferromagnetic layer or a ferromagnetic layer in which a ferromagnetic material is separated by a dielectric. It has been found that a large MR ratio can be obtained by the spin-polarized tunnel effect.

FIG. 1 shows an energy potential diagram in a double multiple ferromagnetic tunnel junction. FIG. 1A shows a first ferromagnetic layer (first metal layer) 1 / dielectric layer 2 / second
A double ferromagnetic tunnel junction comprising a ferromagnetic layer 3 / dielectric layer 4 / third ferromagnetic layer (second metal layer) 5 of FIG.
(B) is composed of a first ferromagnetic layer 1 (first metal layer) / dielectric layer 2 / second ferromagnetic layer 3 / dielectric layer 4 / metal layer (second metal layer) 6. 1 shows a heavy ferromagnetic tunnel junction. The second metal layer may be either a ferromagnetic material or a non-magnetic material.

In such a double ferromagnetic tunnel junction, when the second ferromagnetic layer 3 is sufficiently thin, a discrete energy level dependent on the spin is applied to the second ferromagnetic layer 3 by a quantum effect. (Discrete levels) are formed. That is, the discrete energy level of the second ferromagnetic layer 3 is spin-split due to the exchange interaction, and the energy is the exchange energy γ in the upward spin (↑) and the downward spin (↓).
Only differ by minutes. Here, when the spin directions of the first ferromagnetic layer 1 and the second ferromagnetic layer 3 are the same (upward spin (↑) in FIG. 1), a voltage higher than a certain value in the double ferromagnetic tunnel junction Is applied, the resistance becomes small due to the spin-polarized tunnel effect via the discrete level formed in the second ferromagnetic layer 3. When the spin direction of one ferromagnetic layer (for example, the second ferromagnetic layer 3) is reversed from this state, the transmittance of the spin-polarized spin current decreases and the resistance value increases. In multiple ferromagnetic tunnel junctions,
By utilizing the spin-polarized tunnel effect obtained via the discrete levels formed in the ferromagnetic layer 3, a large MR change rate, for example, exceeding 30% at room temperature can be obtained.

In the above-described magnetoresistance effect based on the spin-polarized tunnel effect, the element resistance decreases when the voltage applied to the multiple ferromagnetic tunnel junction exceeds a certain voltage (threshold voltage). This is considered to be based on the spin-dependent resonance tunnel effect. That is, when a voltage is applied to the multiple ferromagnetic tunnel junction, a tunnel current flows from the first ferromagnetic layer 1 to the third ferromagnetic layer 5 or the metal layer 6. When this voltage exceeds a certain value, one of the discrete levels in the second ferromagnetic layer 3 (３spin in FIG. 1)
Is at the same level (resonant state) as the energy of the conduction electrons of the first ferromagnetic layer 1. The conduction electrons in the first ferromagnetic layer 1 having spins in the same direction as the spins of the discrete levels in this resonance state are not reflected by the dielectric layers 2 and 4 and are not reflected by the first ferromagnetic layer 1. Third ferromagnetic layer 5 or metal layer 6
Tunnel conduction through. This is the spin-dependent resonance tunnel effect. As described above, by controlling the discrete levels in the second ferromagnetic layer 3, an extremely large magnetoresistance effect based on the spin-dependent resonance tunnel effect can be obtained.

In a multiple ferromagnetic tunnel junction using a ferromagnetic layer divided by a dielectric, a spin-polarized tunnel effect can be obtained through a similar discrete level. In other words, the thickness of the ferromagnetic layer divided by the dielectric is sufficiently small, and the periphery is surrounded by the dielectric matrix.
The energy level of the ferromagnetic material is quantized to be discrete and spin-split. A spin-polarized tunnel effect is obtained through discrete levels formed in such a ferromagnetic layer, and at room temperature based on the spin-polarized tunnel effect.
A large MR change rate exceeding 30% can be obtained.

As described above, the magnetic element of the present invention is a magnetic element having a ferromagnetic layer or a laminated film of a ferromagnetic layer and a dielectric layer separated by a dielectric, and has a ratio of 30% or more at room temperature. It is characterized by showing a magnetoresistance change rate. Further, the magnetic element of the present invention is a magnetic element having a ferromagnetic layer or a laminated film of a ferromagnetic layer and a dielectric layer separated by a dielectric, and has a magnetoresistance that increases based on an applied voltage at room temperature. It is characterized by having a rate of change.

According to the magnetic element of the present invention, as described above, a large MR change rate of 30% or more at room temperature is obtained, the element resistance itself is low, and the current (or voltage) value flowing through the element is obtained. Does not decrease the MR change rate, so that a large output voltage (or output current) can be obtained.

A magnetic component according to the present invention includes the above-described magnetic element according to the present invention. Also,
An electronic component according to the present invention includes the above-described magnetic element according to the present invention.

[0025]

Embodiments of the present invention will be described below.

FIG. 2 is a view showing a basic film structure (basic structure) of the first magnetic element of the present invention. The magnetic element shown in FIG. 2 has a first metal layer 11 / dielectric layer 12 / ferromagnetic layer 13
/ Dielectric layer 14 / second metal layer 15. In such a laminated film, the first metal layer 1
1 is made of a ferromagnetic material. On the other hand, the second metal layer 15 may be either a ferromagnetic material or a non-magnetic material. The first and second metal layers 11 and 15 are electrode layers.

The ferromagnetic layer 13 comprises two thin dielectric layers 12,
14, that is, sandwiched between two tunnel layers, between the first metal layer (ferromagnetic material) 11 and the ferromagnetic layer 13 and between the ferromagnetic layer 13 and the second And a metal layer (ferromagnetic material or non-magnetic metal) 15. That is, a double multiple ferromagnetic tunnel junction is formed between the first metal layer 11, the ferromagnetic layer 13, and the second metal layer 15 via the dielectric layers 12, 14.
In such a laminated film, when the ferromagnetic layer 13 is sufficiently thin, a spin-dependent discrete level is formed in the ferromagnetic layer 13 by the quantum effect as shown in FIG. Then, as described above, an appropriate voltage is applied between the first metal layer 11 and the second metal layer 15 made of a ferromagnetic material,
By controlling (shifting) the discrete levels formed in the ferromagnetic layer 13, a spin-polarized tunnel effect can be generated. Further, as shown in FIG.
An electrode (gate electrode) G for controlling (shifting) the discrete level formed in 3 may be provided. The ferromagnetic layer 13 at this time
May be a ferromagnetic layer divided by a dielectric described later. At this time, by changing the direction of one of the spins of the first metal layer 11 and the ferromagnetic layer 13, a very large MR change rate based on the spin-polarized tunneling effect and the spin-polarized resonance tunneling effect can be obtained. Obtainable.

Further, in the first magnetic element of the present invention, the number of the ferromagnetic layers 13 forming discrete levels is not limited to one, and the ferromagnetic layers 13 are formed in a plurality of layers, and the plurality of ferromagnetic layers 13 are formed. Magnetic layers are alternately stacked with dielectric layers,
A configuration having three or more multiple ferromagnetic tunnel junctions may be employed. That is, it is possible to use a laminated film having a structure of first metal layer 11 / dielectric layer 12 / (ferromagnetic layer 13 / dielectric layer 14) _N / second metal layer 15 (N ≧ 1: the number of layers). it can. Also in such a multiple ferromagnetic tunnel junction, by forming a quantum level having different energy between the upward spin (↑) and the downward spin (↓) in the ferromagnetic layer 13 sandwiched between the dielectric layers 12 and 14. Thus, a large MR change rate based on the spin polarization tunnel effect can be obtained.

In the magnetic element shown in FIG. 1, the constituent materials of the ferromagnetic layer 13 and the first metal layer 11 made of a ferromagnetic material (including the case where a ferromagnetic material is used for the second metal layer 15) are as follows. There is no particular limitation, Fe-Ni alloys represented by permalloy, Fe, Co, Ni exhibiting ferromagnetism and alloys containing them, NiMnSb, half metals such as Heusler alloys such as PtMnSb, CrO ₂ ,
From various soft magnetic materials such as oxide half-metals such as magnetite and Mn perovskite and amorphous alloys to hard magnetic materials such as Co-Pt alloys, Fe-Pt alloys and transition metals and rare earth alloys. Ferromagnetic materials can be used.

Further, the first metal layer 11 and the ferromagnetic layer 1
In order to change only the direction of one of the three spins, for example, a difference in coercive force of a ferromagnetic material may be used,
Alternatively, the antiferromagnetic films may be stacked to fix the magnetization of the ferromagnetic layer by exchange coupling. As described above, the thickness of the ferromagnetic layer 13 is such that a discrete energy level depending on spin is formed by the quantum effect, specifically, about 10 nm or less. More preferably, it is 5 nm or less. The thickness of the first and second metal layers 11 and 15 is not particularly limited, and is preferably, for example, about 0.1 to 100 mm.

In the above embodiment, a magnetic element having a double or more multiple tunnel junction of a ferromagnetic material and a dielectric material has been described. However, the same applies to the case where a ferromagnetic layer separated by a dielectric material is used. A simple spin-polarized tunnel effect (further, a spin-polarized resonance tunnel effect) can be obtained at room temperature. This is the second magnetic element of the present invention.

That is, the magnetic element shown in FIG. 3 has a first metal layer (ferromagnetic material) 11 / dielectric layer 12 / ferromagnetic layer 16 divided by dielectric / dielectric layer 14 / second metal It has a laminated film composed of a layer (ferromagnetic or non-magnetic metal) 15. In such a laminated film, the ferromagnetic layer 16 divided by a dielectric is a ferromagnetic material 18 dispersed by a dielectric 17, and the ferromagnetic layer 16 divided by the dielectric exhibits superparamagnetism. Rather, it is a ferromagnetic material with a finite coercive force.
The ferromagnetic layer 16 divided by the dielectric may have some variation, and may be separated by the dielectrics 12 and 14.

The first electrode layer 11 and the second electrode layer 13 are arranged close to each other with the laminated films 12, 16 and 14 interposed therebetween, and are separated from the first electrode layer 11 by a dielectric. A tunnel current flows between the ferromagnetic layer 12, the ferromagnetic layer 12 separated by the dielectric, and the second electrode layer 13. That is, a double tunnel junction is formed between the ferromagnetic layer 12 separated by the dielectric and the electrode layers 11 and 13.

The ferromagnetic layer 16 separated by a dielectric is sandwiched between two thin dielectric layers 12 and 14, that is, two tunnel layers, and a first metal layer is formed through each of the dielectric layers 12 and 14. Between the layer (ferromagnetic material) 11 and the ferromagnetic layer 16 divided by the dielectric and the ferromagnetic layer 1 divided by the dielectric
A tunnel current flows between the first metal layer 6 and the second metal layer (ferromagnetic or non-magnetic metal) 15. That is, a double multiple ferromagnetic tunnel junction is formed between the first metal layer 11, the ferromagnetic layer 16 separated by the dielectric, and the second metal layer 15 via the dielectric layers 12 and 14. Have been.

In such a laminated film, since the thickness of the ferromagnetic material 18 in the ferromagnetic layer 16 divided by the dielectric material is sufficiently small, the energy level of the ferromagnetic material 18 is quantized and discrete. And spin-split. Therefore, similarly to the first embodiment, the first ferromagnetic material is used.
By applying an appropriate voltage between the first metal layer 11 and the second metal layer 15 to control (shift) the discrete levels formed in the ferromagnetic layer 16 separated by the dielectric, the spin polarization can be controlled. A polar tunnel effect can be created. At this time,
First metal layer 11 and ferromagnetic layer 1 separated by a dielectric
By changing the direction of one of the spins of No. 6, a very large MR change rate based on the spin-polarized tunneling effect and also the spin-polarized resonance tunneling effect, for example, at room temperature
A large MR change rate such as 30% or more can be obtained.

Further, in the second magnetic element of the present invention, the ferromagnetic layer 16 divided by a dielectric is not limited to one layer, but may be divided by a plurality of dielectrics as shown in FIG. The ferromagnetic layers 16a, 16b, 16c and the dielectric layers 14a, 14b, 14c are alternately stacked and arranged.
It is also possible to adopt a configuration having multiple or more multiple ferromagnetic tunnel junctions. That is, the first metal layer 11 / the dielectric layer 1
2 / (ferromagnetic layer 16 divided by dielectric / dielectric layer 1)
4) A laminated film having a structure of _N / second metal layer 15 (N ≧ 1: the number of laminated layers) can be used. Even in such a configuration, by controlling the discrete levels of the ferromagnetic layer divided by the dielectric, a large MR change rate based on the spin polarization tunnel effect can be obtained.

FIG. 5 shows a planar type element in which a current flows along the surface of the substrate, and the ferromagnetic layer 16 divided by a dielectric material.
a, 16b and dielectric layers 14a, 14b, 14c are alternately laminated on a first metal layer (ferromagnetic material) 11
And a second metal layer (ferromagnetic or non-magnetic metal) 15 are arranged in a separated state. Such a planar magnetic element can be easily manufactured by using a fine processing technique.

In the magnetic element shown in FIGS. 3 to 5, the ferromagnetic layer 16 divided by the dielectric is obtained by dividing the ferromagnetic material 18 by the dielectric 17 as described above. The spin of the ferromagnetic layer 16 separated by the dielectric does not exhibit superparamagnetism, and is a ferromagnetic material having a finite coercive force. Ideally, the spins are desirably aligned in one direction. In this case, a quantum level is formed in the ferromagnetic layer 16 divided by the dielectric.

Various ferromagnetic materials can be used for the ferromagnetic material 18. For example, when the ferromagnetic layer 16 separated by a dielectric is used as the magnetization fixed layer, Co, Co—Pt alloy, Fe—Pt alloy, transition metal—
It is preferable to use a rare earth alloy or the like. When the ferromagnetic layer 16 separated by a dielectric is used as a soft magnetic layer, the constituent material of the magnetic fine particles 18 is not particularly limited.
Fe, Co, Ni and alloys containing them, magnetite with high spin polarizability, CrO ₂ , RXMnO
_Use oxide-based magnetic materials such as _3-y (R is a rare earth metal, X is at least one element selected from Ca, Ba and Sr, y is a value close to 0), and Heusler alloys such as NiMnSb and PtMnSb can do.

In the case where the ferromagnetic layer 16 separated by a dielectric is used as a magnetization fixed layer, for example, FeMn, PtMn, Ir may be in contact with the ferromagnetic layer 16 separated by a dielectric.
If an antiferromagnetic film such as Mn, PtCrMn, NiMn, or NiO is arranged and the spin of the ferromagnetic layer 16 separated by the dielectric is fixed in one direction, various ferromagnetic materials can be applied to the ferromagnetic material 18. can do. Further, a pair of hard magnetic films are disposed adjacent to both ends of the ferromagnetic layer 16 separated by a dielectric, and the ferromagnetic layer 16 separated by a dielectric is separated from the hard magnetic film.
A spin magnetic field may be applied to fix the spin.

Dielectric 17 (and dielectric layers 12, 14)
Al ₂ O ₃ , SiO ₂ , MgO, AlN, B
Various dielectric materials such as i ₂ O ₃ , MgF ₂ , and CaF ₂ can be used, and the ferromagnetic layer 16 is obtained by dividing the ferromagnetic material 18 with such a dielectric 17. In the above-described oxide film, nitride film, fluoride film and the like, defects of respective elements generally exist, but there is no problem with such a dielectric film.

On the other hand, the first metal layer 11 made of a ferromagnetic material
As a constituent material (including a case where a ferromagnetic material is used for the second metal layer 15), various ferromagnetic materials can be used as shown in the above-described embodiment. Also,
Ferromagnetic materials are Ag, Cu, Au, Ta, B, C, Pd,
Even if it contains some nonmagnetic element such as Pt, Zr, Ir, W, Mo, and Nb, there is no particular problem as long as the ferromagnetism is not lost.

When the second metal layer 15 is made of a ferromagnetic material, the first metal layer 11 and the second metal layer 15 do not necessarily need to be made of the same material. In addition, these ferromagnetic layers are not limited to a single-layer structure, but are arranged via a non-magnetic layer.
A ferromagnetic film having two ferromagnetic layers and having the magnetizations of these ferromagnetic layers coupled antiparallel to each other.
Can also be configured. According to such laminated films connected in antiparallel, it is possible to prevent the magnetic flux from leaking from the ferromagnetic film 14 to the outside.

Further, a laminated film in which ferromagnetic layers and semiconductor layers are alternately laminated can be used as the first metal layer 11. In this case, since the spin can be inverted by heat or light irradiation, there is a feature that a magnetic field becomes unnecessary. As a semiconductor used for such a laminated film, B
An FeSi alloy having a 20-structure is exemplified.

The ferromagnetic layer 16 divided by the above-mentioned dielectric material
The ferromagnetic layer (at least the first metal layer 11) desirably has uniaxial magnetic anisotropy in the film plane. As a result, steep magnetization reversal can be caused, and the magnetization state can be stably maintained.

Also, the ferromagnetic layer 16 divided by a dielectric,
The thicknesses of the first metal 11 and the second metal layer 15 are not particularly limited, but are preferably in the range of, for example, 0.1 to 200 nm. Of these, the thickness of the ferromagnetic layer 16 divided by the dielectric is preferably as small as possible. However, a uniform film thickness can be maintained in the fabrication, and the thickness does not adversely affect the tunnel current. It is preferable that the thickness be, for example, 10 nm or less. Dielectric layers 12, 14
Is preferably as thin as 1 nm to several nm, but there is no particular limitation. Note that the thickness is preferably 10 nm or less from the viewpoint of manufacturing.

The magnetic element composed of such layers is typically in the form of a thin film, and is formed by a molecular beam epitaxy (ΜBE) method,
It can be manufactured by applying ordinary thin film forming methods such as various sputtering methods and vapor deposition methods. Further, the substrate on which the above-described laminated film is manufactured is not particularly limited, and there is no distinction between crystalline and amorphous, or magnetic and non-magnetic,
Various substrates can be used. For example, Si, S
Various substrates such as iO ₂ , Al ₂ O ₃ , spinel, MgO, and AlN can be used.

As described above, in the magnetic element of the present invention, the MR ratio increases at room temperature based on the applied voltage. For example, a large MR ratio of 30% or more at room temperature can be obtained. Such a magnetic element of the present invention can be applied to a magnetic component utilizing a magnetoresistive effect, such as a magnetoresistive magnetic head, a magnetic sensor, and a magnetic storage element. Furthermore, a spin diode element or the like can be manufactured by utilizing the negative resistance of the current-voltage characteristic generated in the magnetic element of the present invention. Further, it can be used in combination with a conventional semiconductor element such as a semiconductor transistor.

Next, an element structure when the magnetic element of the present invention is applied to a magnetic head will be described. 6 to 8 are sectional views showing examples of the film structure when the magnetic element of the present invention is used as a magnetic head. In these figures, 21
Is a ferromagnetic layer in which discrete levels are formed or a ferromagnetic layer divided by a dielectric (including a multilayer laminated film with a dielectric), 22 is a ferromagnetic layer (first metal layer), and 23 is a ferromagnetic layer The layer (second metal layer), 24 is a dielectric layer. In FIG. 8,
Numeral 25 denotes a multilayer laminated film of a ferromagnetic layer or a ferromagnetic layer divided by a dielectric and a dielectric.

As shown in FIGS. 6 to 8, when the magnetic element of the present invention is used as a magnetic head, the ferromagnetic layer 2
FeMn, in contact with ferromagnetic layers in which discrete levels are formed or ferromagnetic layers 21 and 25 separated by a dielectric.
PtMn, IrMn, PtCrMn, NiMn, Ni
It is preferable that an antiferromagnetic film 26 made of O, Fe ₂ O ₃ or the like is disposed, and a spin of the magnetic layer is fixed in one direction by applying a bias magnetic field from the antiferromagnetic film 26.

In each of the film structures for magnetic heads shown in FIGS. 6 to 8, the magnetic properties (soft magnetic and hard magnetic) of each layer are shown.
, A good magnetic head can be formed. For example, in FIG. 6, the ferromagnetic layer in which discrete levels are formed or the ferromagnetic layer 21 divided by a dielectric is a soft magnetic layer, and the ferromagnetic layers 22 and 23 are hard magnetic layers. In FIG. 7, a ferromagnetic layer 22 is a soft magnetic layer, a ferromagnetic layer in which discrete levels are formed, or a ferromagnetic layer 21 and a ferromagnetic layer 23 separated by a dielectric are hard magnetic layers. In FIG. 8, the ferromagnetic layer 22
Is a soft magnetic layer, a ferromagnetic layer in which discrete levels are formed, or a multilayer laminated film 25 of a dielectric and a ferromagnetic layer divided by a dielectric is a hard magnetic layer.

In the above-mentioned combination, by forming the spins of the adjacent magnetic layers substantially orthogonally by film formation in a magnetic field and heat treatment in a magnetic field, a good linear response to the leakage magnetic flux from the recording medium of the HDD can be obtained. Can be Such a structure can be used in any magnetic head structure.

Next, an element structure when the magnetic element of the present invention is applied to a magnetic storage element will be described. 9 to 1
2 is a sectional view showing an example of a film structure when the magnetic element of the present invention is used as a magnetic storage element.

FIGS. 9 and 10 show the element structure of the magnetic storage element in the case of assuming destructive reading. In this case,
In contact with the ferromagnetic layers 22 and 23 and the ferromagnetic layers in which discrete levels are formed or the ferromagnetic layers 21 and 25 separated by a dielectric,
FeMn, PtMn, IrMn, PtCrMn, NiM
Preferably, an antiferromagnetic film 26 of n, NiO or the like is disposed, and a spin of the magnetic layer is fixed in one direction by applying a bias magnetic field from the antiferromagnetic film 26. FIG.
In the above, the ferromagnetic layer 22 is a soft magnetic layer, the ferromagnetic layer in which discrete levels are formed, or the ferromagnetic layer 21 and the ferromagnetic layer 23 separated by a dielectric are hard magnetic layers. In FIG. 10, a ferromagnetic layer 22 is a soft magnetic layer, a ferromagnetic layer in which discrete levels are formed, or a multilayer laminated film 25 of a dielectric and a ferromagnetic layer divided by a dielectric is a hard magnetic layer.

FIGS. 11 and 12 show the element structure of a magnetic memory element assuming non-destructive readout. By appropriately combining a soft magnetic layer and a hard magnetic layer, a read layer and a write layer can be formed. The information in the writing layer can be read nondestructively by reversing the magnetization of the soft magnetic layer with the current magnetic field. In FIG. 11, a ferromagnetic layer 22 is a soft magnetic layer, a ferromagnetic layer in which discrete levels are formed, or a ferromagnetic layer 21 and a ferromagnetic layer 23 separated by a dielectric are hard magnetic layers. In FIG. 12, a ferromagnetic layer 22 is a soft magnetic layer, a ferromagnetic layer in which discrete levels are formed or a ferromagnetic layer 21 divided by a dielectric is a hard magnetic layer, and a second metal layer is a nonmagnetic metal. Layer 27.

As shown in FIG. 13, the ferromagnetic layers 22 and 23 have a magnetic material 2 in which the interaction between the layers is antiferromagnetically coupled.
A laminated film having a structure of 8 / nonmagnetic material 29 / magnetic material 30 may be used. When a semiconductor is used as the non-magnetic material 29, spin switching can be performed by light.

As shown in FIG. 14, the magnetic element 31 of the present invention as described above is replaced with a transistor 31, a write line 32, a read line 33, and a bit line 34.
By performing microfabrication on the substrate in a cell shape together with the above, a magnetic recording device can be manufactured.

As described above, the magnetic element of the present invention is not limited to magnetic parts such as a magnetic head and a magnetic storage element.
An electronic component such as a spin diode element can also be manufactured by utilizing the negative resistance of the current-voltage characteristic generated in the magnetic element of the present invention.

[0059]

Embodiments of the present invention will be described below.

In each of the embodiments described below, 100 × 1
Since the sample was prepared with a relatively large joint area of 00 μm,
In order to reduce the resistance of the electrode, a 200 nm thick Au layer is provided as an underlayer and overlayer of the ferromagnetic electrode.
However, when actually used, it is as small as a few μm, so that an Au layer is not particularly necessary.

Example 1 Fe, Co ₅ Fe ₃ Pt ₂ , A
Film formation in a magnetic field (giving uniaxial anisotropy) was performed at an Ar gas pressure of 1 × 10 ⁻³ Torr using 1 as a target. First, Si / A
Au (200 nm) / l ₂ O ₃ substrate using a metal mask
Fe (50 nm) / Co-Fe-Pt (0.5 nm) electrodes are laminated,
After replacing the metal mask in a vacuum, Al was deposited to a thickness of 1 nm, and the Al film was plasma-oxidized.

Next, Co-F is formed on the above Al ₂ O ₃ film.
After e-Pt is deposited to a thickness of 2 nm, Al is deposited to a thickness of 1 nm and plasma oxidized, then a negative resist is used as an interlayer insulating layer, and a Co ₉ Fe (40 nm) / Au (200 nm) electrode is deposited thereon. did. Thus, Fe / Co-Fe-Pt / A
l ₂ O ₃ / Co-Fe-Pt / Al ₂ O ₃ / Co ₉ Fe
The double tunnel junction 100 [mu] m ² corners of the structure (the structure shown in FIG. 2) was fabricated.

As a result of measuring the Kerr effect of the sample thus manufactured, Co—Fe—Pt having a large coercive force and Fe / Co—Fe—Pt, Co ₉ Fe
A two-step hysteresis curve with a coercive force difference, which is the sum of the hysteresis curves of the two, was observed.

FIG. 15 shows the measurement results of the magnetoresistance ratio of the sample and the dependence of the element voltage on the applied voltage. As the voltage value applied to the element is increased, the element resistance sharply decreases above a certain threshold voltage value, and the magnetoresistance effect increases. This is based on a spin-dependent tunnel effect via discrete quantum mechanical levels formed in Co-Fe-Pt. This indicates that an element having a large MR value and a low resistance can be realized by appropriately selecting the voltage applied to the element or the current flowing through the element.

Further, looking at the magnetoresistance effect curves shown in FIG. 16, the magnetoresistance effect of Fe and Co ₉ Fe sharply changes in a small magnetic field of about 10 Oe, and the magnetoresistance effect type head, magnetic sensor, It can be seen that good characteristics are obtained as a magnetic storage element. In addition, Si as a dielectric layer
O ₂ , AlN, MgO, Bi ₂ O ₃ , MgF ₂ , CaF
The same tendency was shown when using No. ₂ .

Example 2 A film was formed in a magnetic field (providing uniaxial anisotropy) at an Ar gas pressure of 1 × 10 ⁻³ Torr using a sputtering apparatus. First, thermal oxidation S
Au (200 nm) / Fe (40
nm), a 10 nm Co ₈ Pt ₂ film was formed. Next, after replacing the metal mask, Co ₈ Pt ₂ and Si
Using O ₂ as a target, alternate sputtering was performed so that the volume ratio of Co ₈ Pt ₂ to SiO ₂ was 1: 1. At this time, film formation was performed while applying a substrate bias of 400 W, and (S
A layered laminated film of (Co ₈ Pt ₂ layer / SiO ₂ ) separated by iO ₂ was prepared.

After a 1-nm thick SiO ₂ film is formed thereon, the metal mask is replaced to replace Co ₈ Pt ₂ (20.5 nm) / Co ₉ Fe.
(40 nm) / Au (200 nm). Thus, F
_{e / Co 8 Pt 2 / SiO} 2 / (Co 8 Pt 2 / SiO 2 was divided by _{SiO 2) / Co 8 Pt 2} / Co 9 Fe
Double tunnel junction 100 [mu] m ² corners of the structure (the structure shown in FIG. _{3), Fe / Co 8 Pt} 2 / SiO 2 / (Co 8 Pt 2 / SiO 2 was divided by _{SiO 2) 2 / Co 8 Pt} 2
/ Co ₉ to prepare a triple tunnel junction of 100 [mu] m ² corners of Fe structure.

As a result of measuring the Kerr effect of each sample manufactured in this manner, a Co ₈ Pt ₂ layer divided by SiO ₂ having a large coercive force and Fe / Co ₈ P having a relatively small coercive force were obtained.
At t ₂ , a two-stage hysteresis curve having a coercive force difference, which is the sum of the hysteresis curves of Co ₈ Pt ₂ / Co ₉ Fe, was observed.

FIG. 17 shows the measurement results of the magnetoresistance ratio of each sample and the dependence of the device voltage on the applied voltage. From FIG. 17, when the voltage value applied to the element is increased, the element resistance is reduced above a certain threshold voltage value, and the magnetoresistance effect is increased. The spin-dependent tunneling through discrete levels formed in Co ₈ Pt ₂ increases. It can be seen that the effect is obtained. Further, as shown in FIG. 18, the difference ΔR between the case where the spin is parallel and the case where the spin is parallel to the applied voltage increases. This indicates that an element having a large MR value and a low resistance as shown in FIG. 19 can be realized by appropriately selecting the voltage applied to the element or the current flowing through the element. Further, it exhibited good characteristics as a magnetoresistive head, a magnetic sensor, and a magnetic storage element.

The dielectric layer is made of Al ₂ O ₃ , AlN, M
Similar tendency was shown when gO, Bi ₂ O ₃ , MgF ₂ , and CaF ₂ were used.

Example 3 An element structure shown in FIG. 5 was fabricated on a thermally oxidized Si substrate using a sputtering apparatus and a fine pattern formed by a metal mask and lift-off. First, Co ₈ Pt ₂
And SiO ₂ as targets, Co ₈ Pt ₂ and SiO ₂
Alternate sputtering was performed so that the volume ratio of ₂ became 1: 1.
At that time, a metal mask was put on the substrate, and film formation was performed while applying a substrate bias of 400 w. After that, the SiO
₂ and 1nm deposition, SiO ₂ / (SiO of 100μm ² corners
The laminated film of shed _{Co 8 Pt 2 / SiO 2)} 2 structure ₂ was manufactured. The Ar gas pressure at that time was 1 × 10 ⁻³ Torr.

After patterning the resist thereon using a Cr mask exposure device, Co ₈ was used as an upper ferromagnetic layer.
Fe ₂ / Ni ₈ Fe ₂ is deposited and lifted off to 20 μm.
to produce a pattern of m ² corners. Thus, a tunnel junction having the structure shown in FIG. 5 was manufactured. afterwards,
Each sample was heat-treated at 200 ° C. in a magnetic field to give uniaxial anisotropy.

The sample thus fabricated was measured for the magnetoresistance ratio and the applied voltage dependency of the device voltage. FIG. 20 shows the result. It can be seen from FIG. 20 that when the voltage value applied to the element is increased, the element resistance decreases at a certain threshold voltage or more, and a spin-dependent resonance tunnel effect in which the magnetoresistance effect increases is obtained. This indicates that an element having a large MR value and a low resistance can be realized by appropriately selecting the voltage applied to the element or the current flowing through the element.

Looking at the magnetoresistive effect curve shown in FIG. 21, the Co ₈ Fe ₂ / Ni ₈ Fe ₂ layer has a magnetoresistive effect that changes steeply with a small magnetic field of about 6 Oe, It can be seen that good characteristics were obtained as a magnetic sensor and a magnetic storage element.

Note that Al ₂ O ₃ , Al
N, MgO, showed the same tendency in the case of using a _{Bi 2 O 3, MgF 2,} CaF 2.

Example 4 First, Au (200 nm) / Ir—Mn (15 nm) / Co ₉ was deposited on a thermally oxidized Si substrate by using a sputtering apparatus and a metal mask.
Fe (20 nm) was deposited at an Ar gas pressure of 1 × 10 ⁻³ Torr. Next, using Co ₈ Pd ₂ and Al ₂ O ₃ as targets,
o so that the volume ratio of o ₈ Pd ₂ to Al ₂ O ₃ is 1: 1.
Alternate sputtering was performed at an r gas pressure of 1 × 10 ⁻³ Torr and an O ₂ gas pressure of 1 × 10 ⁻⁵ Torr. At this time, the film was formed while applying a substrate bias of 300 W.

Next, by depositing a cap layer of _{Al 2 O 3 (1nm),} Al 2 O 3 / (Al 2 O 3 Co 8 Pd 2 / Al 2 O 3 were separated by) structure laminar Laminated film, A
l ₂ O ₃ / (Co ₈ Pd ₂ / A separated by Al ₂ O ₃
A layered laminated film having an l ₂ O ₃ ) ₂ structure was produced. Next, Al
After using ₂ O ₃ as an interlayer insulating film, Co ₈ Pd ₂ (0.8 nm) is sputtered thereon with an Ar gas pressure of 1 × 10 ⁻³ Torr.
/ Co ₉ Fe (10 nm) / NiFe (30 nm) / Au (200 nm). In this way, the 100 μm structure shown in FIG.
to prepare a double tunnel junction and triple tunnel junctions m ² corners. Thereafter, the sample was heat-treated in a magnetic field at 300 ° C. to give uniaxial anisotropy.

The sample thus manufactured was measured for the magnetoresistance ratio and the applied voltage dependency of the device voltage. The result is shown in FIG. FIG. 22 shows that when the voltage value applied to the element is increased, the element resistance decreases at a certain threshold voltage or more, and a spin-dependent tunnel effect in which the magnetoresistance effect increases is obtained. This can be achieved by appropriately selecting the voltage applied to the element or the current flowing through the element.
This shows that an element having a large MR value and a low resistance can be realized.

Looking at the magnetoresistive effect curve shown in FIG. 23, the magnetoresistive effect of the Co ₉ Fe / NiFe layer changes abruptly with a small magnetic field of about 5 Oe. It can be seen that the device has good characteristics.

Note that SiO ₂ , AlN,
Similar tendency was shown when MgO, Bi ₂ O ₃ , MgF ₂ and CaF ₂ were used.

Example 5 A thermally oxidized Si film was formed using a sputtering apparatus and a metal mask.
To produce a multiple tunnel junction of 100 [mu] m ² corners having the structure shown in Table 1 on the substrate. The manufacturing method is as described in Examples 1 to 5.
The same as above.

The magnetoresistance ratio of each sample and the dependence of the element voltage on the applied voltage were measured. As the voltage value applied to the element was increased, the element resistance was reduced at a certain threshold voltage or more, and the magnetoresistance was reduced. A spin-dependent tunneling effect was obtained through a quantum mechanical discrete level formed in the ferromagnetic layer with increasing. Table 1 also shows the magnetoresistance change rate and the element resistance when a current having the minimum resistance value was applied to each of these samples. These indicate that an element having a large MR value and a low resistance can be realized by appropriately selecting the voltage applied to the element or the current flowing through the element. In addition, good characteristics were obtained as a magnetoresistive head, a magnetic sensor, and a magnetic storage element.

[0083]

[Table 1]

[0084]

As described above, according to the magnetic element of the present invention, the rate of change in magnetoresistance increases with the applied voltage at room temperature based on the spin-polarized tunneling effect of the multiple ferromagnetic tunnel junction. A large magnetoresistance change rate of more than 30% can be obtained below. Therefore, according to such a magnetic element of the present invention, a large output voltage can be obtained, which greatly contributes to improvement of characteristics of a magnetoresistive head, a magnetic sensor, a magnetic storage element, and the like.

[Brief description of the drawings]

FIG. 1 is a diagram showing an energy potential in a double ferromagnetic tunnel junction.

FIG. 2 is a sectional view showing a basic film structure of one embodiment of the first magnetic element of the present invention.

FIG. 3 is a sectional view showing a basic film structure of an embodiment of the second magnetic element of the present invention.

FIG. 4 is a cross-sectional view showing a modification of the magnetic element shown in FIG.

FIG. 5 is a sectional view showing a basic film structure of another embodiment of the second magnetic element of the present invention.

FIG. 6 is a cross-sectional view showing one embodiment of a film structure when the magnetic element of the present invention is applied to a magnetic head.

FIG. 7 is a cross-sectional view showing another embodiment of a film structure when the magnetic element of the present invention is applied to a magnetic head.

FIG. 8 is a sectional view showing still another embodiment of the film structure when the magnetic element of the present invention is applied to a magnetic head.

FIG. 9 is a cross-sectional view showing one embodiment of a film structure when the magnetic element of the present invention is applied to a magnetic recording element.

FIG. 10 is a cross-sectional view showing another embodiment of a film structure when the magnetic element of the present invention is applied to a magnetic recording element.

FIG. 11 is a sectional view showing still another embodiment of the film structure when the magnetic element of the present invention is applied to a magnetic recording element.

FIG. 12 is a sectional view showing still another embodiment of a film structure when the magnetic element of the present invention is applied to a magnetic recording element.

FIG. 13 is a cross-sectional view showing another structural example of the magnetic element of the present invention.

FIG. 14 is a diagram showing an example of a cell structure of a magnetic recording element to which the magnetic element of the present invention is applied.

FIG. 15 is a diagram showing the magnetoresistance change rate and the applied voltage dependence of the element current of the magnetic element according to Example 1 of the present invention.

FIG. 16 is a diagram showing a magnetoresistance effect curve of the magnetic element according to the first embodiment of the present invention.

FIG. 17 is a diagram showing the applied voltage dependence of the magnetoresistance ratio and the device current of the magnetic device according to the second embodiment of the present invention.

FIG. 18 is a diagram showing the applied voltage dependence of the difference ΔR when the spin of the magnetic element according to the second embodiment of the present invention is parallel or antiparallel.

FIG. 19 is a diagram showing a magnetoresistance effect curve of the magnetic element according to the second embodiment of the present invention.

FIG. 20 is a diagram showing the magnetoresistance ratio of the magnetic element according to the third embodiment of the present invention and the applied voltage dependence of the element current.

FIG. 21 is a diagram showing a magnetoresistance effect curve of a magnetic element according to Embodiment 3 of the present invention.

FIG. 22 is a diagram showing the magnetoresistance change rate and the applied voltage dependence of element current of a magnetic element according to Example 4 of the present invention.

FIG. 23 is a view showing a magnetoresistance effect curve of a magnetic element according to Example 4 of the present invention.

FIG. 24 is a view showing a schematic structure of a magnetic element of the present invention in which a control electrode is provided.

[Description of Signs] 1... First ferromagnetic layer 2, 4, 12, 14... Dielectric layer 3... Second ferromagnetic layer 5... 3rd ferromagnetic layer 6. ... First metal layer 13 made of ferromagnetic material 13... Ferromagnetic layer 15... Second metal layer made of ferromagnetic material or non-magnetic material 16... Dielectric 18: Ferromagnetic

Claims (9)

[Claims] An at least one ferromagnetic layer, a dielectric layer disposed so as to sandwich the ferromagnetic layer, and first and second ferromagnetic layers laminated with the dielectric layer interposed therebetween. A stacked film having a second metal layer, wherein at least one of the first and second metal layers is made of a ferromagnetic material, and the stacked film is formed of discrete levels formed on the ferromagnetic layer. A magnetic element exhibiting a spin-polarized tunneling effect via a magnetic field. 2. A ferromagnetic layer in which a ferromagnetic material is divided by a dielectric, a dielectric layer disposed so as to sandwich the magnetic layer, and a stacked arrangement of the ferromagnetic layer via the dielectric layer. A stacked film having first and second metal layers formed, wherein at least one of the first and second metal layers is made of a ferromagnetic material, and the stacked film is formed on the ferromagnetic layer. A magnetic element exhibiting a spin-polarized tunneling effect through a given discrete level. 3. The magnetic element according to claim 1, wherein the laminated film exhibits a spin-polarized resonance tunnel effect. 4. The magnetic element according to claim 1, wherein the spin direction of one of the ferromagnetic layer and the metal layer made of the ferromagnetic material is changed to exhibit a magnetoresistance effect. A magnetic element, characterized in that: 5. The magnetic element according to claim 1, further comprising an electrode for controlling a discrete level formed in the ferromagnetic layer. 6. A magnetic element having a ferromagnetic layer or a laminated film of a ferromagnetic layer in which a ferromagnetic material is separated by a dielectric and a dielectric layer, wherein the magnetoresistance change at room temperature is 30% or more. A magnetic element showing a ratio. 7. A magnetic element having a laminated film of a ferromagnetic layer or a ferromagnetic layer in which a ferromagnetic material is divided by a dielectric and a dielectric layer, and increases at room temperature based on an applied voltage. A magnetic element having a magnetoresistance change rate. 8. A magnetic component comprising the magnetic element according to claim 1. Description: 9. An electronic component comprising the magnetic element according to claim 1. Description: