JPH1092702A - Method for normal-temperature junction of silicon wafer - Google Patents
Method for normal-temperature junction of silicon waferInfo
- Publication number
- JPH1092702A JPH1092702A JP8268028A JP26802896A JPH1092702A JP H1092702 A JPH1092702 A JP H1092702A JP 8268028 A JP8268028 A JP 8268028A JP 26802896 A JP26802896 A JP 26802896A JP H1092702 A JPH1092702 A JP H1092702A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- inert gas
- wafer
- seconds
- room temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 24
- 235000012431 wafers Nutrition 0.000 claims abstract description 69
- 239000011261 inert gas Substances 0.000 claims abstract description 17
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 8
- 238000000992 sputter etching Methods 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 238000003825 pressing Methods 0.000 abstract description 6
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 239000003643 water by type Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000005304 joining Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Particle Accelerators (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、シリコンウェハーの
接合法に関するものである。この技術は半導体の微細加
工技術により作成した電子部品及び機械部品の組み立て
及び封止に利用することが出来る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for bonding silicon wafers. This technology can be used for assembling and sealing electronic components and mechanical components created by semiconductor fine processing technology.
【０００２】[0002]
【従来の技術】集積回路のチップやマイクロマシン用の
部品等の製造において、シリコンからなる微細部品を接
合するする必要がある場合がある。このような場合、従
来の接合方法としては図７に示すように、シリコン部品
の接合面をＨ2 Ｏ2 ＋Ｈ2 ＳＯ4などの水溶性薬品を使
用して親水化処理して、水酸基を付与し、その接合面の
水酸基及び水分子間の結合をもとにして接合させ、さら
に、加熱処理により接合強度を高めている（Ｓｉウェハ
ーの直接接着技術 （応用物理 ６０（１９９１），７
９０）参照）。2. Description of the Related Art In the manufacture of integrated circuit chips and parts for micromachines, it is sometimes necessary to bond fine parts made of silicon. In such a case, as a conventional bonding method, as shown in FIG. 7, a bonding surface of a silicon component is subjected to a hydrophilic treatment using a water-soluble chemical such as H 2 O 2 + H 2 SO 4 to impart a hydroxyl group. Then, bonding is performed based on the bond between the hydroxyl group and water molecule on the bonding surface, and the bonding strength is further increased by heat treatment (direct bonding technology of Si wafer (Applied Physics 60 (1991), 7
90)).
【０００３】[0003]
【発明が解決しようとする課題】しかしこの従来の接合
方法では、ウェハーの表面に水酸基を付与することによ
り、接触時の結合力を得ているため、この段階での強度
が小さく、熱処理により、水素結合による結合をより強
固な結合に変える必要があり、このため加熱処理が必要
であった。しかし、これらの加熱処理は微細加工された
部品を破損させる恐れがあるために、適用が制限される
ことがあった．また接合時に押し付荷重や静電引力など
による接合面での接触の促進が必要となりる接合法は、
同様に微細加工した部品の破損の可能性から適用が制限
される。このようなことから、荷重による押し付けや加
熱処理を必要としないシリコンウェハーの接合技術の開
発が望まれている。この発明は上記のごとき事情に鑑み
てなされたものであって、大きな接合強度を持ち、かつ
荷重による押し付けや加熱処理を必要としないシリコン
ウェハーの接合方法を提供することを目的とするもので
ある。However, in this conventional bonding method, the bonding force at the time of contact is obtained by providing a hydroxyl group to the surface of the wafer. It was necessary to change the bond by the hydrogen bond to a stronger bond, which required a heat treatment. However, the application of these heat treatments was sometimes limited because they could damage microfabricated parts. In addition, when joining, it is necessary to promote contact on the joining surface by pressing load or electrostatic attraction, etc.
Similarly, the potential for breakage of micromachined parts limits its application. For this reason, there is a demand for the development of a silicon wafer bonding technique that does not require pressing by a load or heat treatment. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for bonding a silicon wafer having high bonding strength and not requiring pressing or heat treatment by a load. .
【０００４】[0004]
【課題を解決するための手段】この目的に対応して、こ
の発明のシリコンウェハーの常温接合法は、シリコンウ
ェハーとシリコンウェハーとを接合する方法であって、
両方のシリコンウェハーの接合面を接合に先立って室温
の真空中で不活性ガスイオンビームまたは不活性ガス高
速原子ビームで照射してスパッタエッチングすることを
特徴としている。In response to this object, a room temperature bonding method for a silicon wafer according to the present invention is a method for bonding a silicon wafer to a silicon wafer,
Prior to bonding, the bonding surfaces of both silicon wafers are irradiated with an inert gas ion beam or an inert gas fast atom beam in a vacuum at room temperature to perform sputter etching.
【０００５】[0005]
【発明の実施の形態】以下、この発明の詳細を一実施の
形態を示す図面について説明する。まずこの発明のウェ
ハー接合方法で使用するウェハー接合装置について説明
する。図１において、１はウェハー接合装置である。ウ
ェハー接合装置１は真空チャンバー２を有する。真空チ
ャンバー２のウェハー出し入れ口３は扉４によって開閉
可能である。真空チャンバー２内には対向して位置する
一対のウェハー保持部材５、６が配置されている。一方
のウェハー保持部材５は真空チャンバー２内に固定され
ており、他方のウェハー保持部材６はプッシュロッド７
の下端に取り付けられている。プッシュロッド７は真空
チャンバー２の気密を保った状態で直線移動可能で、保
持した他方のウェハー８ｂを一方のウェハー保持部材５
に保持された他方のウェハー８ａに接触させることが出
来る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the drawings showing an embodiment. First, a wafer bonding apparatus used in the wafer bonding method of the present invention will be described. In FIG. 1, reference numeral 1 denotes a wafer bonding apparatus. The wafer bonding apparatus 1 has a vacuum chamber 2. The wafer inlet 3 of the vacuum chamber 2 can be opened and closed by a door 4. A pair of opposed wafer holding members 5 and 6 are arranged in the vacuum chamber 2. One wafer holding member 5 is fixed in the vacuum chamber 2, and the other wafer holding member 6 is a push rod 7.
It is attached to the lower end. The push rod 7 can be moved linearly while keeping the airtightness of the vacuum chamber 2, and the other held wafer 8 b can be held in one of the wafer holding members 5.
Can be brought into contact with the other wafer 8a held in the above.
【０００６】さらに真空チャンバー２内には二つのビー
ム照射装置１１ａ、１１ｂが配置されている。一方のビ
ーム照射装置１１ａは一方のハウェハー８ａを照射する
ためのものであり、他方のビーム照射装置１１ｂは他方
のウェハー８ｂを照射するためのものである。それぞれ
のウェハーに対する照射角度は可変である。真空チャン
バー２の真空は真空排気口１２を通して、真空ポンプ
（図示せず）によって形成される。Further, two beam irradiation devices 11a and 11b are arranged in the vacuum chamber 2. One beam irradiation device 11a is for irradiating one wafer 8a, and the other beam irradiation device 11b is for irradiating the other wafer 8b. The irradiation angle for each wafer is variable. The vacuum in the vacuum chamber 2 is formed by a vacuum pump (not shown) through a vacuum exhaust port 12.
【０００７】この様に構成されたウェハー接合装置１を
使用して、この発明のウェハー接合方法は次のようにな
される。まず接合されるウェハー８ａ、８ｂの接合面を
洗浄する。洗浄操作の内容は従来のウェハー接合技術で
使用されている処理と同じものである。洗浄、乾燥後の
ウァハー８ａ、８ｂを真空チャンバー２内に設置し、一
対のウェハー保持部材５、６に取り付ける。次に真空チ
ャンバー２内を減圧する。減圧の程度は１０-3ｔｏｒｒ
以上である。次に両方のウェハー８ａ、８ｂの接合面を
室温で不活性ガスイオンビームまたは不活性ガス高速原
子ビームで１０秒から１８００秒、特に好ましくは１０
秒から３０秒照射してスパッタエッチングをする。この
発明ではこの照射時間が極めて重要な意義を有する。こ
の高圧不活性ガスイオンビームまたは不活性ガス高速原
子ビームのビームソースの印加電圧とプラズマ電流は、
使用するビーム源にかなり依存するが、例えば０．１〜
３．０ｋＶ及び１〜５０ｍＡである。スパッタエッチン
グのエッチング量は１ｎｍ〜４０ｎｍである。次に照射
の後にプッシュロッド７を下げてウェハー８ａ、８ｂの
接合面を重ね合わせる。この発明では重ね合わせた両ウ
ェハーを加圧することは重要な要素ではない。これによ
ってシリコンウェハーの接合は完了する。[0007] The wafer bonding method of the present invention using the wafer bonding apparatus 1 configured as described above is performed as follows. First, the bonding surfaces of the wafers 8a and 8b to be bonded are cleaned. The content of the cleaning operation is the same as the processing used in the conventional wafer bonding technology. The washed and dried wafers 8a and 8b are placed in the vacuum chamber 2 and attached to the pair of wafer holding members 5 and 6. Next, the pressure inside the vacuum chamber 2 is reduced. The degree of pressure reduction is 10 -3 torr
That is all. Next, the bonding surface of both wafers 8a and 8b is heated at room temperature with an inert gas ion beam or an inert gas fast atom beam for 10 seconds to 1800 seconds, particularly preferably 10 seconds.
Irradiation is performed for 30 seconds to 30 seconds to perform sputter etching. In the present invention, this irradiation time is extremely important. The applied voltage and plasma current of the beam source of this high-pressure inert gas ion beam or inert gas fast atom beam are
Depending considerably on the beam source used, for example from 0.1 to
3.0 kV and 1-50 mA. The etching amount of the sputter etching is 1 nm to 40 nm. Next, after irradiation, the push rod 7 is lowered, and the bonding surfaces of the wafers 8a and 8b are overlapped. In the present invention, pressurizing both superposed wafers is not an important factor. Thereby, the bonding of the silicon wafer is completed.
【０００８】[0008]
（実験設備）図３に示すような試料を約２０Ωcmの４イ
ンチＮ型シリコンウェハーからダイヤモンドソーで切り
出して使用した。試料は段付きのプラツトフォーム形状
に整形して接着に対するエッジの影響をなくした。この
形状は熱酸素膜をマスクとしてＫＯＨエッチングによっ
て行なった。エッチングの後、この試料を接合に先立っ
て洗浄した。洗浄操作の内容は従来のウェハー接合技術
で使用されている親水化処理と同じものである。試料を
図２に示す真空装置に設置し、真空装置内を１ｘ１０-8
ｔｏｒｒに減圧し、しかる後にＦＡＢ１１０（Ｉｏｎ
Ｔｅｃｈ Ｌｔｄ．社（英国）製）を２基ビームソース
として使用してアルゴン高速原子ビームを発生させて試
料の接合面を照射した。それぞれのビームソースの印加
電圧とプラズマ電流は１．２ｋＶ及び２０ｍＡであっ
た。ビーム照射角度は４５°、照射時間は１０秒から１
８００秒まで変化させた。(Experimental equipment) A sample as shown in FIG. 3 was cut out from a 4-inch N-type silicon wafer of about 20 Ωcm with a diamond saw and used. The sample was shaped into a stepped platform to eliminate edge effects on adhesion. This shape was formed by KOH etching using the thermal oxygen film as a mask. After etching, the sample was cleaned prior to bonding. The content of the cleaning operation is the same as the hydrophilic treatment used in the conventional wafer bonding technology. The sample was placed in the vacuum device shown in FIG. 2, and the inside of the vacuum device was 1 × 10 −8.
Torr, and then FAB110 (Ion
Tech Ltd. (UK) was used as a two-beam source to generate an argon fast atom beam to irradiate the joint surface of the sample. The applied voltage and plasma current of each beam source were 1.2 kV and 20 mA. Beam irradiation angle is 45 °, irradiation time is 10 seconds to 1
Changed up to 800 seconds.
【０００９】（実験結果）図４は引っ張り試験の結果を
示す図表である。試料を真空雰囲気中に数時間おいて
も、それだけでは両者は接合しないが、わずか１０秒で
もアルゴンビームを照射した場合には両者は接合する。
最大接着強度のものは３０秒間の照射のものであった。
照射時間と接着強度の関係では、照射時間が３０秒をこ
えると３００秒照射のものまでは接着強度に大きな差は
ない。３００秒をこえるとむしろ接合強度は低下する。
この接合強度は従来法の９００〜１１００℃の加熱を必
要とする湿式法での接合強度とほとんど同じである。接
合の際には荷重の付加は必要ない。付加する荷重と接合
強度の関係を図５に示す。図５から明らかなように接合
強度は荷重０．０２５Ｍｐａ〜１．８Ｍｐａの範囲でほ
とんど変化がなく、この値は従来法の１１００℃の加熱
を必要とする湿式法で得られる接合強度とほとんど同じ
である。このことから荷重の付加は本方法の接合強度に
は大きな要素ではないことが明らかである。(Experimental Results) FIG. 4 is a table showing the results of a tensile test. Even if the sample is kept in a vacuum atmosphere for several hours, the two are not joined by themselves, but when the argon beam is irradiated for only 10 seconds, the two are joined.
Those with the maximum adhesive strength were those irradiated for 30 seconds.
Regarding the relationship between the irradiation time and the adhesive strength, if the irradiation time exceeds 30 seconds, there is no significant difference in the adhesive strength up to the irradiation of 300 seconds. If it exceeds 300 seconds, the bonding strength is rather lowered.
This bonding strength is almost the same as the bonding strength in the wet method which requires heating at 900 to 1100 ° C. in the conventional method. No additional load is required for joining. FIG. 5 shows the relationship between the applied load and the joining strength. As is clear from FIG. 5, the bonding strength hardly changes in the range of the load of 0.025 Mpa to 1.8 Mpa, and this value is almost the same as the bonding strength obtained by the wet method which requires heating at 1100 ° C. in the conventional method. It is. It is clear from this that the addition of load is not a major factor in the joining strength of the present method.
【００１０】[0010]
【発明の効果】この発明のシリコンウァェハーの接合方
法ではウェハーの表面に存在する吸着ガスや自然酸化膜
などを真空中でウェハー表面をアルゴンなどの不活性ガ
スビームでエッチングすることにより除去し、表面に接
合するための結合力を付与し、ウェハーの表面が非常に
平滑であることを利用して、これを真空中で重ね合わせ
ることにより、ウェハー同志を無加熱、無加圧で接合す
ることが出来る。この発明のウェハーの接合方法では、
図６に示すように、シリコンウェハーの接合面はアルゴ
ンなどの不活性ガスビームでエッチングするため、表面
に水分子や酸化膜が存在せず、ウェハーの原子間の接合
が形成されるため、常温で強固な接合を形成することが
出来る。このため荷重による押し付けや加熱処理が破損
の原因となりうる微細加工された部品の接合にも適用す
ることが出来る。以上の説明から明らかな通り、この発
明によれば、大きな接合強度を持ち、かつ荷重による押
し付けや加熱処理を必要としないシリコンウェハーの接
合方法を得ることが出来る。According to the silicon wafer bonding method of the present invention, an adsorbed gas or a natural oxide film present on the wafer surface is removed by etching the wafer surface with an inert gas beam such as argon in a vacuum. Applying bonding force for bonding to the surface, utilizing the fact that the surface of the wafer is extremely smooth, and superimposing them in a vacuum to bond the wafers without heating and without pressure Can be done. In the method of bonding a wafer according to the present invention,
As shown in FIG. 6, since the bonding surface of the silicon wafer is etched with an inert gas beam such as argon, there is no water molecule or oxide film on the surface, and the bonding between the atoms of the wafer is formed. A strong bond can be formed. Therefore, the present invention can be applied to the joining of microfabricated parts that can be damaged by pressing or heat treatment by a load. As is clear from the above description, according to the present invention, it is possible to obtain a method for bonding silicon wafers having high bonding strength and not requiring pressing or heat treatment by a load.
【図１】シリコンウェハー接合装置を示す構成説明図FIG. 1 is a configuration explanatory view showing a silicon wafer bonding apparatus.
【図２】シリコンウェハー接合の実験装置を示す構成説
明図FIG. 2 is a configuration explanatory view showing an experimental apparatus for bonding silicon wafers.
【図３】試料を示す図FIG. 3 shows a sample.
【図４】引っ張り試験の結果を示す図表FIG. 4 is a table showing results of a tensile test.
【図５】付加する荷重と接合強度との関係を示す図表FIG. 5 is a table showing a relationship between an applied load and a joining strength.
【図６】この発明のシリコンウェハーの接合の原理を示
す説明図FIG. 6 is an explanatory view showing the principle of bonding silicon wafers of the present invention.
【図７】従来のシリコンウェハーの接合の原理を示す説
明図FIG. 7 is an explanatory view showing the principle of bonding of a conventional silicon wafer.
１ ウェハー接合装置 ２ 真空チャンバー ３ ウェハー出し入れ口 ４ 扉 ５、６ 一対のウェハー保持対部材 ７ プッシュロッド ８ａ、８ｂ ウェハー １１ａ、１１ｂ ビーム照射装置 １２ 真空排気口 DESCRIPTION OF SYMBOLS 1 Wafer bonding apparatus 2 Vacuum chamber 3 Wafer insertion / removal port 4 Door 5, 6 A pair of wafer holding pair members 7 Push rod 8a, 8b Wafer 11a, 11b Beam irradiation apparatus 12 Vacuum exhaust port
フロントページの続き (72)発明者 須賀 唯知 東京都目黒区駒場四丁目６番１号 東京大 学先端科学技術研究センター内 (72)発明者 鄭 澤龍 東京都目黒区駒場四丁目６番１号 東京大 学先端科学技術研究センター内Continuation of the front page (72) Inventor Yuichi Suga 4-6-1 Komaba, Meguro-ku, Tokyo Inside the Research Center for Advanced Science and Technology, University of Tokyo (72) Inventor Zheng Sawalong 4-6-1 Komaba, Meguro-ku, Tokyo No. Research Center for Advanced Science and Technology, University of Tokyo
Claims (7)
接合する方法であって、両方のシリコンウェハーの接合
面を接合に先立って室温の真空中で不活性ガスイオンビ
ームまたは不活性ガス高速原子ビームで照射してスパッ
タエッチングすることを特徴とするシリコンウェハーの
常温接合法1. A method for bonding a silicon wafer to a silicon wafer, wherein a bonding surface of both silicon wafers is irradiated with an inert gas ion beam or an inert gas fast atom beam in a vacuum at room temperature prior to bonding. Temperature bonding method for silicon wafers, characterized by performing sputter etching by sputtering
秒であることを特徴とする請求項１記載のシリコンウェ
ハーの常温接合法2. The irradiation time of the irradiation is from 10 seconds to 1800.
2. The room temperature bonding method for a silicon wafer according to claim 1, wherein
あることを特徴とする請求項１記載のシリコンウェハー
の常温接合法3. The method for bonding silicon wafers at room temperature according to claim 1, wherein the irradiation time of the irradiation is 10 seconds to 30 seconds.
ガス高速原子ビームのビームソースの印加電圧は０．１
〜３ｋＶであることを特徴とする請求項１記載のシリコ
ンウェハーの常温接合法4. An applied voltage of a beam source of the inert gas ion beam or the inert gas fast atom beam is 0.1.
2. The method for bonding silicon wafers at room temperature according to claim 1, wherein the voltage is 3 kV.
１ｎｍ〜４０ｎｍであることを特徴とする請求項１記載
のシリコンウェハーの常温接合法5. The method for bonding silicon wafers at room temperature according to claim 1, wherein the amount of said sputter etching is 1 nm to 40 nm.
を特徴とする請求項１記載のシリコンウェハーの常温接
合法6. The method for bonding silicon wafers at room temperature according to claim 1, wherein said vacuum is 10 -3 torr or more.
接合する方法であって、両方のシリコンウェハーの接合
面を室温の１０-3ｔｏｒｒ以上の真空中でそれぞれのビ
ームソースの印加電圧とプラズマ電流が１．２ｋＶ及び
２０ｍＡの不活性ガスイオンビームまたは不活性ガス高
速原子ビームで照射時間１０秒から１８００秒照射し、
しかる後に重ね合わせることを特徴とするシリコンウェ
ハーの常温接合法7. A method for bonding a silicon wafer to a silicon wafer, wherein a bonding surface of both silicon wafers is applied at a room temperature of 10 −3 torr or more under vacuum and the applied voltage of each beam source and the plasma current are reduced by 1%. Irradiation with an inert gas ion beam or an inert gas fast atom beam of 2 kV and 20 mA for an irradiation time of 10 seconds to 1800 seconds,
Room-temperature bonding of silicon wafers characterized by overlapping
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8268028A JP2791429B2 (en) | 1996-09-18 | 1996-09-18 | Room-temperature bonding of silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8268028A JP2791429B2 (en) | 1996-09-18 | 1996-09-18 | Room-temperature bonding of silicon wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1092702A true JPH1092702A (en) | 1998-04-10 |
| JP2791429B2 JP2791429B2 (en) | 1998-08-27 |
Family
ID=17452892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8268028A Expired - Lifetime JP2791429B2 (en) | 1996-09-18 | 1996-09-18 | Room-temperature bonding of silicon wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2791429B2 (en) |
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| JPWO2020138202A1 (en) * | 2018-12-28 | 2021-11-04 | 国立研究開発法人産業技術総合研究所 | Graphite thin film / silicon substrate laminate, its manufacturing method, substrate for high heat exhaust type electronic device |
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| US11676935B2 (en) | 2019-05-27 | 2023-06-13 | Waseda University | Bonding method and structure |
| CN116092953A (en) * | 2023-03-07 | 2023-05-09 | 天津中科晶禾电子科技有限责任公司 | Wafer bonding device and method and composite substrate assembly |
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| JP2791429B2 (en) | 1998-08-27 |
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