JPH10149996A - Semiconductor device manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately control the temperature of a line through which the easily liquefiable gas of a semiconductor manufacturing device is made to flow over the full length of the line. SOLUTION: A gas pipeline 20 is divided into a plurality of zones 25, 26, and 27 and heaters which can be supplied with electric powder independently from each other and temperature sensors 31, 32, and 33 are respectively installed to the zones. In addition, a temperature controller 35 which controls the power supply to the heaters based on the detected temperatures from the sensors 31, 32, and 33 is provided. Therefore, the temperature of the pipeline 20 can be controlled with higher accuracy and the energy consumption of a semiconductor device can be saved by independently controlling the temperature of the pipeline 20 in each zone.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device by performing a surface treatment such as formation of a thin film on a surface of a substrate such as a wafer, and more particularly to a modification of a reaction gas supply apparatus.

[0002]

2. Description of the Related Art FIG. 2 schematically shows a semiconductor manufacturing apparatus. In the figure, reference numeral 1 denotes a vertical reaction furnace, and a first reaction gas supply line 2 and a second reaction gas supply line are provided inside the vertical reaction furnace 1. Line 3
And the exhaust line 4 is in communication.

A wafer loaded in a boat (not shown) is loaded into the vertical reactor 1 and the reaction gas is supplied from the first reaction gas supply line 2 and the second reaction gas supply line 3 while the wafer is heated. Is supplied to perform necessary processing such as formation of a thin film, and the exhaust gas after the reaction is exhausted from the exhaust line 4.

Some of the reactant gases to be supplied have a high liquefaction temperature, and the entire line is conventionally heated to prevent liquefaction of the reactant gas being supplied. In the semiconductor manufacturing apparatus shown in FIG. 2, the first reactant gas supply line 2 supplies a reactant gas having a high liquefaction temperature, and a heater is wound around the pipe of the first reactant gas supply line 2 so that the reactant gas is supplied. It is heated so that it does not fall below the liquefaction temperature.

The first reaction gas supply line 2 is provided with a stop valve 5, an air valve 6, a flow controller 7, and an air valve 8 in this order from the upstream side, and the second reaction gas supply line 3 is provided with a stop valve 10 from the upstream side. , Air valve 1
1, a flow controller 12 is provided in sequence, and the flow controller 12
Branching further downstream, one branch line 13 is connected to the first
Merges into the reaction gas supply line 2 and the other branch line 1
Reference numeral 4 communicates with the vertical reactor 1. The one branch line 13 is provided with an air valve 15 and a stop valve 16 from the upstream side, and the other branch line 14 is provided with an air valve 17 and a stop valve 18 from the upstream side.

[0006] From the first reaction gas supply line 2, a gas which is easily liquefied, for example, SiH ₂ Cl ₂ , TEOS, Si ₂
A reaction gas such as H ₆ is supplied, and a purge gas, a dilution gas, or the like, for example, a nitrogen gas is supplied from the second reaction gas supply line 3.

When processing a wafer, the air valve 17 is closed and the air valve 15 and the air valve 1 are closed.
1 and the air valve 8 and the air valve 6 are opened to supply the reaction gas to the vertical reactor 1 while controlling the flow rate of the supply gas by the flow controllers 7 and 12.
When purging the inside of the vertical reactor 1 after the treatment, the air valve 8 and the air valve 6 are closed, the air valve 15 is closed, and the stop valve 18 and the air valve 1 are closed.
7 is opened to supply a purge gas into the vertical reactor 1. In the opening and closing of the valve, the stop valve is normally open, and only the air valve need be opened and closed without opening and closing each stop valve.

A conventional heating device for the first reaction gas supply line 2 will be described with reference to FIG.

[0009] A tape heater 21 is wound around the pipe 20, and the tape heater 21 is connected to a temperature controller 22. The temperature controller 22 includes a temperature controller 23 and a power supply power supply (not shown), and a temperature sensor 2 connected to the temperature controller 22.
Numeral 4 detects the temperature of the pipe 20 at a required position.

The heating temperature of the pipe 20 is set and input to the temperature controller 23, and the power supply to the tape heater 21 is controlled so that the temperature detected by the temperature sensor 24 becomes the set temperature. The temperature of the pipe 20 is maintained at a set temperature.

[0011]

In the above-described conventional heating apparatus, the temperature of the entire first reaction gas supply line 2 is controlled by detecting the temperature of a temperature sensor 24 provided at one place.
In one temperature detection, it is difficult to accurately control only the temperature near the temperature sensor 24. However, the total length of the first reaction gas supply line 2 is several meters, and 10 m depending on the device.
Some of them are close to each other, and it is extremely difficult to control the entire first reactant gas supply line 2 to a predetermined temperature, causing a phenomenon of causing partial liquefaction or heating more than necessary.

The present invention has been made in view of the above circumstances, and aims to accurately control the temperature of a line through which a gas that easily liquefies flows.

[0013]

According to the present invention, a gas pipe is divided into a plurality of zones, a heater capable of supplying electric power independently for each zone is provided, and a temperature sensor is provided for each zone. The present invention relates to a semiconductor manufacturing apparatus provided with a temperature controller for controlling electric power to the heater based on a temperature detected by the temperature sensor, and also to reduce a control target temperature of each of the plurality of zones toward an upstream side. The present invention relates to a manufacturing apparatus, and further relates to a semiconductor manufacturing apparatus in which the gas pipe is on a supply side.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

In the present embodiment, the main configuration of the semiconductor manufacturing apparatus itself is the same, so that the description thereof will be omitted, and the main part will be described with reference to FIG.

The pipe 20 is divided into a plurality of zones 25, 26, 27
(In the present embodiment, divided into three), and tape heaters 28, 29, and 30 are wound around each zone. Further, temperature sensors 31, 32, 33 are provided for each zone,
1, 32 and 33 are connected to the temperature controller 35. The temperature controller 35 includes temperature controllers 36, 37, and 38 to which the temperature sensors 31, 32, and 33 are connected, and a power supply (not shown).

The temperature controllers 36, 37 and 38 control the power supply to the tape heaters 28, 29 and 30 based on the detected temperatures from the temperature sensors 31, 32 and 33, and the respective zones are set. Control the temperature so that it becomes the temperature.

A target temperature is set for each of the temperature controllers 36, 37, and 38. The temperature controllers 36, 37, and 38 control the temperature detected by the temperature sensors 31, 32, and 33 and the target temperature. And the tape heaters 28, 29, and 30 are supplied from the power supply so that the detected temperature becomes the target temperature.
Control the power supply to the

The first reaction gas supply line 2 is divided into a plurality of zones, and the temperature can be controlled for each zone, so that the temperature control accuracy of the entire first reaction gas supply line 2 is improved. At the same time, efficient heating without waste becomes possible. For example, the temperature can be gradually increased toward the downstream side. For example, in the case of a reaction gas having a vaporization temperature of 50 ° C., the set temperature of the zone 25 on the upstream side is set to 45 °.
By setting the set temperature of the zone 26 to 47 ° C. and the set temperature of the zone 27 to 50 ° C., at least at the time when the reaction gas is supplied to the vertical reactor 1, the reaction gas is completely vaporized. Then, efficient and efficient temperature control can be achieved,
Energy saving can be achieved.

In the above embodiment, the number of divided zones is three, but it goes without saying that the number of divided zones may be two or four or more. In addition, the piping may be heated only on the reaction gas supply side, or the exhaust line 4 may be heated.

[0021]

As described above, according to the present invention, a pipe requiring heating is divided into a plurality of zones to perform temperature control, so that temperature control can be performed with high accuracy and the target temperature of each zone can be controlled. By changing the setting, efficient temperature control without unnecessary heating is possible, and energy saving can be achieved.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a main part of an embodiment of the present invention.

FIG. 2 is an explanatory view schematically showing a semiconductor manufacturing apparatus.

FIG. 3 is an explanatory diagram showing a main part of a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vertical reaction furnace 2 1st reaction gas supply line 3 2nd reaction gas supply line 4 Exhaust line 25 Zone 26 Zone 27 Zone 31 Temperature sensor 32 Temperature sensor 33 Temperature sensor 35 Temperature controller 36 Temperature controller 37 Temperature controller 38 Temperature controller

Claims (3)

[Claims] 1. A gas pipe is divided into a plurality of zones, a heater capable of supplying electric power independently for each zone is provided, and a temperature sensor is provided for each zone, and a temperature detected from the temperature sensor is detected. A semiconductor manufacturing apparatus, further comprising a temperature controller for controlling power to the heater based on the temperature controller. 2. The semiconductor manufacturing apparatus according to claim 1, wherein a control target temperature of each of said plurality of zones is lowered toward an upstream side. 3. The semiconductor manufacturing apparatus according to claim 1, wherein said gas pipe is on a supply side.