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JPH10144773A - Substrate holder - Google Patents

Substrate holder

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Publication number
JPH10144773A
JPH10144773A JP29489396A JP29489396A JPH10144773A JP H10144773 A JPH10144773 A JP H10144773A JP 29489396 A JP29489396 A JP 29489396A JP 29489396 A JP29489396 A JP 29489396A JP H10144773 A JPH10144773 A JP H10144773A
Authority
JP
Japan
Prior art keywords
substrate
substrate holder
heater
holder
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP29489396A
Other languages
Japanese (ja)
Inventor
Yoshimichi Yonekura
義道 米倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP29489396A priority Critical patent/JPH10144773A/en
Publication of JPH10144773A publication Critical patent/JPH10144773A/en
Withdrawn legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a holder which holds a substrate where a thin film is formed and capable of enhancing a thin film on the substrate in formation efficiency and reducing the substrate's defects caused by dusts attached to the substrate. SOLUTION: A substrate holder 11 holds a substrate 3 housed in a recessed part, where a recess 13 is provided to the substrate's surface opposite to its other surface where the substrate 3 is provided so as to make a part of the surface of the holder 11 corresponding to the substrate 3 different from the rest of the surface in a contacting area ratio to a heater 4, whereby the temperature of the surface 15 of the holder 11 is set equal to or lower than of the substrate 3.

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は基板ホルダーに関
し、特に半導体,絶縁体及び導体等の薄膜形成用の基板
ホルダーとして有用なものである。 【0002】 【従来の技術】各種基板上に薄膜を形成する際には基板
をヒーターで加熱し、温度を上げて行うことが多い。こ
のため基板の位置決めや搬送の際には基板ホルダーが必
要であり、基板を基板ホルダーに埋設・保持してヒータ
ー上に載置した状態で加熱することが多い。 【0003】従来技術に係る基板ホルダーの一例を図7
に示す。同図に示すように、基板ホルダー1は基板を埋
設・保持して位置決めするための位置決め用の凹部2を
有しており、SUS,インコネル,ハステロイ等の金属
またはカーボン、セラミックス等の内から一種類の材料
を選択して構成している。かかる基板ホルダー1は、図
8に示すように、基板3を凹部2に埋設した状態でヒー
ター4の上に載置し、ヒーター4に通電して加熱するこ
とにより基板3を加熱する。 【0004】 【発明が解決しようとする課題】上述の如き従来技術に
係る基板ホルダー1ではこの基板ホルダー1と基板3と
の材質の違いに起因して熱伝導度が異なるため、基板3
の表面の温度より基板ホルダー1の表面5の温度の方が
高くなり、基板3よりも基板ホルダー1の表面5の方に
膜が厚く形成される場合がある。熱CVD法等の薄膜形
成方法では温度が高い所に膜が厚く形成されるという性
質を有するためである。したがって、この場合には基板
3への成膜効率(膜となった量/供給した原料の量)が
低下するという問題があった。 【0005】また、このように基板ホルダー1の表面5
に膜が厚く堆積する場合には、堆積した膜が剥がれて基
板3の表面へ移動し、ゴミ付着による基板3の欠陥の原
因となっていた。このため、時々基板ホルダー1を洗浄
して堆積物を除去しなければならないという問題もあっ
た。特に、カーボン素材にセラミックスをコーティング
した基板ホルダー1の場合には、基板ホルダー1の洗浄
の際にセラミックスコーティングが剥離するという問題
があり、コーティングが剥がれたカーボン製の基板ホル
ダー1は高温の酸化性雰囲気で即座に酸化してしまうた
め、使用に供することができない。 【0006】さらに、基板ホルダー1の材質がSUS、
インコネル、ハステロイ等の金属の場合にはヒーター4
の温度が200℃以上になると基板ホルダー1の厚さが
薄い部分に熱応力が集中して図9に示すように基板ホル
ダー1が変形し、基板3と基板ホルダー1が離れてしま
うので、ヒーター4の熱が基板3に伝わらず、基板3の
温度が上がらないという問題があった。 【0007】また、基板ホルダー1の材料をカーボン、
セラミックスのような金属以外の材質にすれば、かかる
熱変形は生じないものの、基板ホルダー1の製作コスト
が高騰するばかりでなく、納期がかかるという問題があ
った。特にカーボンの場合、高温で酸化性雰囲気中では
カーボンが著しく酸化されてしまうため、カーボン素材
のみでは使用できず、カーボン素材の表面にセラミック
スの薄膜をコーティングすることが必要となり、このた
めには高度なコーティング技術を要する。このこととも
相俟ち製作コストがさらに高騰する。 【0008】本発明は、上記従来技術に鑑み、基板上へ
の成膜効率が向上し、ゴミ付着による基板の欠陥を低減
するとともに、安価な金属製でも熱変形を生じることな
く所定の基板加熱が可能な基板ホルダーを提供すること
を目的とする。 【0009】 【課題を解決するための手段】上記目的を達成する本発
明の構成は次の1)〜4)に記載する点を特徴とする。 【0010】1) 薄膜を成長させる基板を埋設・保持
する薄膜形成用等の基板ホルダーにおいて、この基板ホ
ルダーの基板に接する面と反対側の面であって、ヒータ
ーと接触する側の面に凹部を設けてヒーターとの接触面
積を減少させたこと。 【0011】本発明によれば凹部に対応する基板ホルダ
ーの表面温度を他の部分に比べて低く抑えることができ
る。 【0012】2) 1)に記載する基板ホルダーにおい
て、凹部は、基板ホルダーの基板を埋設・保持する部分
に対応する部分以外の部分に設けたこと。 【0013】本発明によれば基板ホルダーの、基板を埋
設・保持している部分以外の部分ではヒーターとの接触
面積比率が小さいので、この部分におけるヒーターから
基板ホルダーへの熱伝導による熱の流入を抑えることが
できる。一方、基板ホルダーの、基板を埋設・保持して
いる部分はヒーターと全面接触しているので、ヒーター
から基板ホルダーへの熱伝導による熱の流入が大きく、
この熱が基板へ流入して基板温度を効率良く上昇させ
る。すなわち、本発明のように、ヒーターからの熱伝導
による熱の流入量を基板の埋設・保持部とそれ以外の部
分とで異なる量にすることで基板ホルダーの表面の温度
を基板の表面と同じか、若しくはそれ以下とすることが
できる。 【0014】3) 薄膜を成長させる基板を埋設・保持
する薄膜形成用等の基板ホルダーにおいて、基板の面に
接する部分と接しない部分とをそれぞれ分離した構造と
すること。 【0015】4) 3)に記載する基板ホルダーにおい
て、基板の面に接する部分と接しない部分とをそれぞれ
異なる材質で構成したこと。 【0016】上記3)及び4)の発明によれば、基板の
埋設・保持部とその周辺部とを分離した構造とすること
で、各構成部材の板の厚みを均一にすることができ、そ
の結果基板ホルダーが熱変形を生じることはなく基板と
基板ホルダーが密着するので、基板にヒーターからの熱
が有効に伝達される。すなわち、多構成部材の厚みをそ
れぞれ均一にすることができるので、ヒーター上にホル
ダーを設置して加熱した時の熱応力が厚みの薄い等の特
定の部分に集中することはない。この結果基板ホルダー
が変形することはなく、基板と接する部材が熱変形する
こともないので、ヒーターの熱が基板に有効に伝わり、
基板をヒーター上に直接置いた場合と同程度に基板の温
度を上昇させることができる。 【0017】 【実施の形態】以下発明の実施の形態を図面に基づき詳
細に説明する。なお、従来技術及び相互の実施の形態間
で同一部分には同一番号を付し重複する説明は省略す
る。 【0018】図1は本発明の第1の実施の形態を示す断
面構造図である。同図に示すように、基板ホルダー11
の表面(上面)15には凹部2が設けられており、この
凹部2で基板3を埋設・保持するように構成してある。
一方、基板ホルダー11のヒーター4と接触する側の面
である裏面(下面)には、基板3の埋設・保持部である
凹部2に対応する部分以外の部分に凹部13が設けられ
ている。 【0019】図2に示すように、上記基板ホルダー11
をヒーター4上に載置すると、ヒーター4と基板ホルダ
ー11との間には、基板3の埋設・保持部である凹部2
に対応する部分以外の部分に形成した凹部13のために
ヒーター4に接しない空間ができる。この結果ヒーター
4に通電してこれを加熱すると、基板3は熱伝導により
温度が上昇するが、基板ホルダー11の表面15には凹
部13でできる空間を輻射で伝わってくる熱しか流入せ
ず、その量は熱伝導による熱量よりもはるかに小さいの
で、基板ホルダー11の表面15の温度は基板3の表面
(上面)の温度よりも高くなることがない。この状態で
熱CVD法により成膜を行うと、基板3の表面に基板ホ
ルダー11の表面よりも多くの膜が形成され、成膜効率
が向上する。 【0020】また、基板ホルダー11の表面には膜が然
程形成されないので、ここからの剥離によりゴミが基板
3の表面へ移ることが少なくなり、その分基板3の欠陥
の発生が低減される。 【0021】すなわち本形態は基板ホルダー11のヒー
ター4と接触する面の、凹部2に対応する部分とそれ以
外の部分とで接触面積比率を異なるようにすることで、
基板ホルダー11の表面15の温度を基板3の表面の温
度と同じかそれ以下とする構造としたものである。 【0022】図3は本発明の第2の実施の形態を示す断
面構造図である。同図に示すように本形態では、基板ホ
ルダー21とヒータ4との接触面積比率が第1の実施の
形態の場合よりも多くなるように凹部24a、24bを
形成し、基板ホルダー21の表面25の温度が第1の実
施の形態の場合よりも高くなるようにしたものである。
このようにヒーター4との接触面積比率を変えることに
より、基板ホルダー21の表面25の温度を所望の温度
に制御することができる。 【0023】図4は本発明の第3の実施の形態を示す断
面構造図である。同図に示すように、本形態に係る基板
ホルダー31は基板3の面に接するステンレス製の基板
埋設・保持部材31aと、基板3の面に接しないステン
レス製の周辺部材31bとを有しており、両者を組み合
わせて周辺部材31bを持ち上げた時に基板埋設・保持
部材31aが落下しないように0.3mm程度の厚みの
鍔部31c、31dを互いに設けてある。ここで基板埋
設・保持部材31aをヒーター4の上に置いた場合にヒ
ーター4の上面との接触を確実なものとするために、周
辺部材31bを持ち上げた時に基板埋設・保持部材31
aが下方に1mm程度出るように設計してある。また、
これら基板埋設・保持部材31a及び周辺部材31bは
独立して作製することができ、それぞれ均一の厚みを有
するように構成してある。 【0024】図5は基板3を基板埋設・保持部材31a
に埋設・保持し、ヒーター4の上に設置した時の状態を
示す。本形態に係る基板ホルダー31は各構成部材の厚
みが均一であるので、ヒーター4の温度を上げても基板
ホルダー31に対する熱応力が特定の位置に集中するこ
とがない。この結果基板ホルダー31に熱変形を生じる
ことはなく、基板3の温度を有効に上昇させることがで
きる。 【0025】図6は本発明の第4の実施の形態を示す断
面構造図である。同図に示すように、本形態に係る基板
ホルダー41は外形形状は第3の実施の形態に係る基板
ホルダー31と同様である。本形態では基板埋設・保持
部材41aの材質を周辺部材31bとは異なる材質で構
成したものであり、基板埋設・保持部材41aを熱伝導
率がステンレスよりも高いCu,Agあるいはそれらを
含む合金として基板3の加熱を一層効果的に行えるよう
にしたものである。 【0026】上記基板ホルダー31、41は薄膜形成用
の基板ホルダーとして特に有用なものではあるが、これ
に限定するものでは勿論ない。熱処理装置の基板ホルダ
ーにも適用し得る。 【0027】 【発明の効果】以上実施の形態とともに詳細に説明した
通り、本発明によれば基板の表面温度と基板ホルダーの
表面温度とを容易に制御することができる。このため本
発明を熱CVD法による薄膜形成用の基板ホルダーに適
用すれば基板上への成膜効率を上げることができ、ゴミ
付着による膜の欠陥も少なくすることができる。 【0028】また、本発明の基板ホルダーによれば基板
の加熱を有効に行うことができる。このため本発明をC
VD,PVD等の薄膜形成用の装置の基板ホルダーに適
用すれば、基板の加熱を基板ホルダーの変形を伴うこと
なく行えるので、基板の表面上の温度分布を均一にする
ことができ、均一な薄膜を形成することができる。 【0029】さらに、本発明を熱処理装置の基板ホルダ
ーに適用すれば、基板温度の分布を均一にできるので、
均一な熱処理効果を得ることができる。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holder, and more particularly, to a substrate holder useful for forming a thin film such as a semiconductor, an insulator, and a conductor. 2. Description of the Related Art When forming a thin film on various substrates, the substrate is often heated with a heater to increase the temperature. Therefore, a substrate holder is required for positioning and transporting the substrate, and the substrate is often buried and held in the substrate holder and heated in a state of being placed on a heater. FIG. 7 shows an example of a substrate holder according to the prior art.
Shown in As shown in FIG. 1, a substrate holder 1 has a positioning recess 2 for embedding / holding a substrate for positioning. The substrate holder 1 is made of metal such as SUS, Inconel, Hastelloy, or carbon, ceramics or the like. The material is selected and configured. As shown in FIG. 8, the substrate holder 1 is placed on the heater 4 with the substrate 3 buried in the recess 2, and the substrate 4 is heated by energizing and heating the heater 4. [0004] The substrate holder 1 according to the prior art as described above has a different thermal conductivity due to a difference in the material between the substrate holder 1 and the substrate 3.
In some cases, the temperature of the surface 5 of the substrate holder 1 is higher than the temperature of the surface of the substrate 3, and the film may be formed thicker on the surface 5 of the substrate holder 1 than on the substrate 3. This is because a thin film forming method such as a thermal CVD method has a property that a thick film is formed at a high temperature. Therefore, in this case, there is a problem that the efficiency of film formation on the substrate 3 (amount of the film / amount of the supplied material) is reduced. In addition, the surface 5 of the substrate holder 1 is
When a thick film is deposited on the substrate 3, the deposited film is peeled off and moved to the surface of the substrate 3, causing a defect of the substrate 3 due to adhesion of dust. For this reason, there has been a problem that the substrate holder 1 must sometimes be washed to remove deposits. In particular, in the case of the substrate holder 1 in which a carbon material is coated with ceramics, there is a problem that the ceramic coating is peeled off when the substrate holder 1 is washed. Since it is immediately oxidized in an atmosphere, it cannot be used. Further, the material of the substrate holder 1 is SUS,
Heater 4 for metals such as Inconel and Hastelloy
When the temperature of the substrate holder is 200 ° C. or higher, thermal stress concentrates on the thin portion of the substrate holder 1 and the substrate holder 1 is deformed as shown in FIG. 9, and the substrate 3 and the substrate holder 1 are separated from each other. There is a problem that the heat of No. 4 is not transmitted to the substrate 3 and the temperature of the substrate 3 does not rise. Further, the material of the substrate holder 1 is carbon,
If a material other than metal such as ceramics is used, such thermal deformation does not occur, but there is a problem that not only the production cost of the substrate holder 1 rises but also the delivery time is required. In particular, in the case of carbon, carbon is remarkably oxidized in an oxidizing atmosphere at high temperatures, so it cannot be used with carbon material alone, and it is necessary to coat a ceramic thin film on the surface of the carbon material. Requires a special coating technique. This, combined with this, further increases the production cost. In view of the above prior art, the present invention improves the efficiency of film formation on a substrate, reduces defects of the substrate due to dust adhesion, and heats a predetermined substrate without causing thermal deformation even with inexpensive metal. It is an object of the present invention to provide a substrate holder capable of performing the following. [0009] The structure of the present invention that achieves the above object is characterized by the following points 1) to 4). 1) In a substrate holder for forming a thin film for burying and holding a substrate on which a thin film is to be grown, a concave portion is formed on a surface of the substrate holder opposite to the surface in contact with the substrate and on the side in contact with the heater. To reduce the contact area with the heater. According to the present invention, the surface temperature of the substrate holder corresponding to the concave portion can be suppressed lower than that of other portions. 2) In the substrate holder described in 1), the concave portion is provided in a portion other than the portion corresponding to the portion of the substrate holder in which the substrate is embedded and held. According to the present invention, the portion of the substrate holder other than the portion where the substrate is buried / held therein has a small contact area ratio with the heater, so that heat flows into the substrate holder from this heater by heat conduction. Can be suppressed. On the other hand, the part of the substrate holder that embeds and holds the substrate is in full contact with the heater, so the heat inflow from the heater to the substrate holder due to heat conduction is large,
This heat flows into the substrate and efficiently raises the substrate temperature. That is, as in the present invention, the temperature of the surface of the substrate holder is made the same as the surface of the substrate by making the amount of heat inflow due to heat conduction from the heater different between the buried / holding portion of the substrate and the other portions. Or less. 3) In a substrate holder for forming a thin film for burying and holding a substrate on which a thin film is to be grown, a structure in which a portion in contact with a surface of the substrate and a portion not in contact with the substrate are separated from each other. 4) In the substrate holder described in 3), a portion that is in contact with the surface of the substrate and a portion that is not in contact with the substrate are made of different materials. According to the inventions of 3) and 4) above, since the embedded / holding portion of the substrate and the peripheral portion are separated from each other, the thickness of each component member can be made uniform. As a result, the substrate holder does not undergo thermal deformation and the substrate and the substrate holder adhere to each other, so that heat from the heater is effectively transmitted to the substrate. That is, since the thickness of each of the multi-component members can be made uniform, the thermal stress when the holder is placed on the heater and heated is not concentrated on a specific portion such as a thin portion. As a result, the substrate holder is not deformed, and the members in contact with the substrate are not thermally deformed, so that the heat of the heater is effectively transmitted to the substrate,
The temperature of the substrate can be raised to the same extent as if the substrate were placed directly on the heater. Embodiments of the present invention will be described below in detail with reference to the drawings. Note that the same portions are denoted by the same reference numerals in the related art and the embodiments, and the overlapping description is omitted. FIG. 1 is a sectional structural view showing a first embodiment of the present invention. As shown in FIG.
The surface (upper surface) 15 is provided with a concave portion 2, and the substrate 3 is embedded and held in the concave portion 2.
On the other hand, on the back surface (lower surface) of the substrate holder 11 on the side in contact with the heater 4, a concave portion 13 is provided in a portion other than the portion corresponding to the concave portion 2, which is the embedding / holding portion of the substrate 3. As shown in FIG. 2, the substrate holder 11
Is mounted on the heater 4, the recess 2, which is an embedded / holding portion of the substrate 3, is provided between the heater 4 and the substrate holder 11.
Due to the recess 13 formed in a portion other than the portion corresponding to the above, there is a space not in contact with the heater 4. As a result, when the heater 4 is energized and heated, the temperature of the substrate 3 rises due to heat conduction. However, only heat transmitted by radiation in the space formed by the concave portion 13 flows into the surface 15 of the substrate holder 11, Since the amount is much smaller than the amount of heat due to heat conduction, the temperature of the surface 15 of the substrate holder 11 does not become higher than the temperature of the surface (upper surface) of the substrate 3. When a film is formed by the thermal CVD method in this state, more films are formed on the surface of the substrate 3 than on the surface of the substrate holder 11, and the film forming efficiency is improved. Further, since a film is not formed on the surface of the substrate holder 11 to a large extent, dust is less likely to be transferred to the surface of the substrate 3 due to peeling from the surface, and the occurrence of defects on the substrate 3 is reduced accordingly. . That is, in this embodiment, the contact area ratio between the portion corresponding to the concave portion 2 and the other portion of the surface of the substrate holder 11 which contacts the heater 4 is different.
The temperature of the surface 15 of the substrate holder 11 is equal to or lower than the temperature of the surface of the substrate 3. FIG. 3 is a sectional structural view showing a second embodiment of the present invention. As shown in the figure, in the present embodiment, the recesses 24a and 24b are formed so that the contact area ratio between the substrate holder 21 and the heater 4 is larger than in the first embodiment, and the surface 25 of the substrate holder 21 is formed. Is higher than that in the first embodiment.
By changing the contact area ratio with the heater 4 in this manner, the temperature of the surface 25 of the substrate holder 21 can be controlled to a desired temperature. FIG. 4 is a sectional structural view showing a third embodiment of the present invention. As shown in the figure, the substrate holder 31 according to the present embodiment has a stainless steel substrate embedding / holding member 31a in contact with the surface of the substrate 3 and a stainless steel peripheral member 31b not in contact with the surface of the substrate 3. In addition, flanges 31c and 31d having a thickness of about 0.3 mm are provided to prevent the substrate burying / holding member 31a from dropping when the peripheral member 31b is lifted by combining them. Here, when the substrate embedding / holding member 31a is placed on the heater 4, the contact between the substrate embedding / holding member 31a and the upper surface of the heater 4 is ensured.
a is designed so as to protrude downward by about 1 mm. Also,
The substrate burying / holding member 31a and the peripheral member 31b can be manufactured independently, and each is configured to have a uniform thickness. FIG. 5 shows a state where the substrate 3 is embedded in the substrate
2 shows a state when it is buried and held, and installed on the heater 4. Since the thickness of each component of the substrate holder 31 according to the present embodiment is uniform, even when the temperature of the heater 4 is increased, the thermal stress on the substrate holder 31 does not concentrate on a specific position. As a result, no thermal deformation occurs in the substrate holder 31, and the temperature of the substrate 3 can be effectively increased. FIG. 6 is a sectional structural view showing a fourth embodiment of the present invention. As shown in the drawing, the outer shape of a substrate holder 41 according to the present embodiment is the same as that of the substrate holder 31 according to the third embodiment. In the present embodiment, the material of the substrate burying / holding member 41a is made of a material different from that of the peripheral member 31b, and the substrate burying / holding member 41a is made of Cu, Ag having a higher thermal conductivity than stainless steel, or an alloy containing them. The heating of the substrate 3 can be performed more effectively. The substrate holders 31 and 41 are particularly useful as substrate holders for forming a thin film, but are not limited to these. The present invention can also be applied to a substrate holder of a heat treatment apparatus. As described above in detail with the embodiments, according to the present invention, the surface temperature of the substrate and the surface temperature of the substrate holder can be easily controlled. Therefore, if the present invention is applied to a substrate holder for forming a thin film by a thermal CVD method, the efficiency of film formation on a substrate can be increased, and the defect of the film due to adhesion of dust can be reduced. According to the substrate holder of the present invention, the substrate can be effectively heated. For this reason, the present invention
If the present invention is applied to a substrate holder of an apparatus for forming a thin film such as VD or PVD, the substrate can be heated without deforming the substrate holder, so that the temperature distribution on the surface of the substrate can be made uniform and uniform. A thin film can be formed. Further, if the present invention is applied to a substrate holder of a heat treatment apparatus, the distribution of the substrate temperature can be made uniform, so that
A uniform heat treatment effect can be obtained.

【図面の簡単な説明】 【図1】本発明の第1の実施の形態に係る基板ホルダー
を示す断面構造図。 【図2】図1に示す基板ホルダーをヒーター上に設置し
て加熱する時の態様を示す断面構成図。 【図3】本発明の第2の実施の形態に係る基板ホルダー
を示す断面構造図。 【図4】本発明の第3の実施の形態に係る基板ホルダー
を示す断面構造図。 【図5】図4に示す基板ホルダーをヒーター上に設置し
て加熱する時の態様を示す断面構成図。 【図6】本発明の第4の実施の形態に係る基板ホルダー
を示す断面構造図。 【図7】従来技術に係る基板ホルダーを示す断面構造
図。 【図8】図7に示す基板ホルダーをヒーター上に設置し
て加熱する時の態様を示す断面構成図。 【図9】図7に示す基板ホルダーをヒーター上に設置し
て加熱する時の態様(熱応力による変形を生起した状
態)を示す断面構成図。 【符号の説明】 3 基板 4 ヒーター 11、21、31、41 基板ホルダー 13、24a、24b 凹部 12 基板埋設部 13,15 基板ホルダー表面 31a、41a 基板埋設・保持部材 31b 周辺部材
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional structural view showing a substrate holder according to a first embodiment of the present invention. FIG. 2 is a cross-sectional configuration diagram showing a mode when the substrate holder shown in FIG. 1 is placed on a heater and heated. FIG. 3 is a sectional structural view showing a substrate holder according to a second embodiment of the present invention. FIG. 4 is a sectional structural view showing a substrate holder according to a third embodiment of the present invention. FIG. 5 is a cross-sectional configuration diagram showing a mode when the substrate holder shown in FIG. 4 is placed on a heater and heated. FIG. 6 is a sectional structural view showing a substrate holder according to a fourth embodiment of the present invention. FIG. 7 is a sectional structural view showing a substrate holder according to the related art. FIG. 8 is a cross-sectional configuration diagram showing an aspect in which the substrate holder shown in FIG. 7 is placed on a heater and heated. FIG. 9 is a cross-sectional configuration diagram showing an aspect (state in which deformation due to thermal stress has occurred) when the substrate holder shown in FIG. 7 is placed on a heater and heated. [Description of Signs] 3 Substrate 4 Heaters 11, 21, 31, 41 Substrate holders 13, 24a, 24b Concave portion 12 Substrate burying portion 13, 15 Substrate holder surface 31a, 41a Substrate burying / holding member 31b Peripheral member

─────────────────────────────────────────────────────
【手続補正書】 【提出日】平成8年12月26日 【手続補正1】 【補正対象書類名】明細書 【補正対象項目名】符号の説明 【補正方法】変更 【補正内容】 【符号の説明】 、11、21、31、41 基板ホルダー 基板埋設部 3 基板 4 ヒーター 、15、25 基板ホルダー表面 13、24a、24b 凹部 31a、41a 基板埋設・保持部材 31b 周辺部材31c、31d 鍔部
────────────────────────────────────────────────── ───
[Procedure amendment] [Submission date] December 26, 1996 [Procedure amendment 1] [Document name to be amended] Description [Item name to be amended] Explanation of sign [Amendment method] Change [Content of amendment] Description: 1 , 11, 21, 31, 41 Substrate holder 2 Substrate embedding part 3 Substrate 4 Heater 5 , 15, 25 Substrate holder surface 13, 24a, 24b Depression 31a, 41a Substrate embedding / holding member 31b Peripheral members 31c, 31d Flange Department

Claims (1)

【特許請求の範囲】 【請求項1】 薄膜を成長させる基板を埋設・保持する
薄膜形成用等の基板ホルダーにおいて、この基板ホルダ
ーの基板に接する面と反対側の面であって、ヒーターと
接触する側の面に凹部を設けてヒーターとの接触面積を
減少させたことを特徴とする基板ホルダー。 【請求項2】 〔請求項1〕に記載する基板ホルダーに
おいて、凹部は、基板ホルダーの基板を埋設・保持する
部分に対応する部分以外の部分に設けたことを特徴とす
る基板ホルダー。 【請求項3】 薄膜を成長させる基板を埋設・保持する
薄膜形成用等の基板ホルダーにおいて、基板の面に接す
る部分と接しない部分とをそれぞれ分離した構造とする
ことを特徴とする基板ホルダー。 【請求項4】 〔請求項3〕に記載する基板ホルダーに
おいて、基板の面に接する部分と接しない部分とをそれ
ぞれ異なる材質で構成したことを特徴とする基板ホルダ
ー。
Claims 1. A substrate holder for burying and holding a substrate on which a thin film is to be grown, for forming a thin film or the like, the surface being opposite to the surface of the substrate holder in contact with the substrate and being in contact with the heater. A substrate holder characterized in that a concave area is provided on a surface on the side to be contacted to reduce a contact area with a heater. 2. The substrate holder according to claim 1, wherein the recess is provided in a portion other than a portion corresponding to a portion of the substrate holder in which the substrate is embedded and held. 3. A substrate holder for forming a thin film for embedding and holding a substrate on which a thin film is to be buried, wherein a portion in contact with a surface of the substrate and a portion not in contact with the surface of the substrate are separated from each other. 4. The substrate holder according to claim 3, wherein a portion that is in contact with the surface of the substrate and a portion that is not in contact are formed of different materials.
JP29489396A 1996-11-07 1996-11-07 Substrate holder Withdrawn JPH10144773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29489396A JPH10144773A (en) 1996-11-07 1996-11-07 Substrate holder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29489396A JPH10144773A (en) 1996-11-07 1996-11-07 Substrate holder

Publications (1)

Publication Number Publication Date
JPH10144773A true JPH10144773A (en) 1998-05-29

Family

ID=17813622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29489396A Withdrawn JPH10144773A (en) 1996-11-07 1996-11-07 Substrate holder

Country Status (1)

Country Link
JP (1) JPH10144773A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526394A (en) * 2002-05-13 2005-09-02 クリー インコーポレイテッド MOCVD reactor susceptor
JP2008153316A (en) * 2006-12-15 2008-07-03 Hitachi High-Tech Instruments Co Ltd Individual piece carrying apparatus
JP2009270170A (en) * 2008-05-09 2009-11-19 Taiyo Nippon Sanso Corp Vapor phase growth method
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
JP2013513236A (en) * 2009-12-02 2013-04-18 ビーコ インストゥルメンツ インコーポレイテッド Method for improving the performance of a substrate carrier
JP2017098441A (en) * 2015-11-26 2017-06-01 クアーズテック株式会社 Susceptor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005526394A (en) * 2002-05-13 2005-09-02 クリー インコーポレイテッド MOCVD reactor susceptor
US8372204B2 (en) 2002-05-13 2013-02-12 Cree, Inc. Susceptor for MOCVD reactor
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
JP2008153316A (en) * 2006-12-15 2008-07-03 Hitachi High-Tech Instruments Co Ltd Individual piece carrying apparatus
JP2009270170A (en) * 2008-05-09 2009-11-19 Taiyo Nippon Sanso Corp Vapor phase growth method
JP2013513236A (en) * 2009-12-02 2013-04-18 ビーコ インストゥルメンツ インコーポレイテッド Method for improving the performance of a substrate carrier
US9269565B2 (en) 2009-12-02 2016-02-23 Veeco Instruments Inc. Method for improving performance of a substrate carrier
US10262883B2 (en) 2009-12-02 2019-04-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
JP2017098441A (en) * 2015-11-26 2017-06-01 クアーズテック株式会社 Susceptor

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Effective date: 20040203