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JPH0394841U - - Google Patents

Info

Publication number
JPH0394841U
JPH0394841U JP1990003223U JP322390U JPH0394841U JP H0394841 U JPH0394841 U JP H0394841U JP 1990003223 U JP1990003223 U JP 1990003223U JP 322390 U JP322390 U JP 322390U JP H0394841 U JPH0394841 U JP H0394841U
Authority
JP
Japan
Prior art keywords
resonant coil
frequency band
oscillation
circuit
oscillation transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990003223U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990003223U priority Critical patent/JPH0394841U/ja
Priority to GB9022514A priority patent/GB2240227B/en
Priority to DE4036866A priority patent/DE4036866C2/de
Publication of JPH0394841U publication Critical patent/JPH0394841U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
    • H03B2200/0042—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor the capacitance diode being in the feedback path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0056—Circuit elements of oscillators including a diode used for switching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Channel Selection Circuits, Automatic Tuning Circuits (AREA)
  • Superheterodyne Receivers (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の第１の実施例の構成を示す
回路図、第２図は同実施例のハイバンド受信時の
等価回路図、第３図は同実施例のローバンド受信
時の等価回路図、第４図は同考案の第２の実施例
の構成を示す回路図、第５図は同実施例のハイバ
ンド受信時の回路構成を示す等価回路図、第６図
は同実施例のローバンド受信時の等価回路図、第
７図は第１の従来例の構成を示す回路図、第８図
は同従来例のハイバンド受信時の等価回路図、第
９図は同従来例のローバンド受信時の等価回路図
、第１０図は第２の従来例の構成を示す回路図、
第１１図は同従来例のハイバンド受信時の等価回
路図、第１２図は同従来例のローバンド受信時の
等価回路図である。 １……ローバンド同調用コイル（第２の周波数
帯用共振コイル）、２……ハイバンド同調用コイ
ル（第１の周波数帯用共振コイル）、１３……ス
イツチダイオード、１６……トランジスタ（発振
用トランジスタ）、２１，２２……帰還容量。

Claims (1)

  1. 【実用新案登録請求の範囲】 発振用トランジスタのコレクタとベースとの間
    に、第１の周波数帯用共振コイルおよび第２の周
    波数帯用共振コイルを順次直列に接続し、前記第
    ２の周波数帯用共振コイルを短絡状態または非短
    絡状態に切り換えることによつて該回路の発振周
    波数を切り換える発振回路において、 前記第１の周波数帯用共振コイルと前記第２の
    周波数帯用共振コイルとの接続点と、前記発振用
    トランジスタのエミツタとの間に帰還容量を接続
    したことを特徴とする局部発振回路。
JP1990003223U 1990-01-18 1990-01-18 Pending JPH0394841U (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1990003223U JPH0394841U (ja) 1990-01-18 1990-01-18
GB9022514A GB2240227B (en) 1990-01-18 1990-10-17 Local oscillation circuit
DE4036866A DE4036866C2 (de) 1990-01-18 1990-11-19 Überlagerungsoszillatorschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990003223U JPH0394841U (ja) 1990-01-18 1990-01-18

Publications (1)

Publication Number Publication Date
JPH0394841U true JPH0394841U (ja) 1991-09-27

Family

ID=11551448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990003223U Pending JPH0394841U (ja) 1990-01-18 1990-01-18

Country Status (3)

Country Link
JP (1) JPH0394841U (ja)
DE (1) DE4036866C2 (ja)
GB (1) GB2240227B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194976B1 (en) * 1999-03-29 2001-02-27 Qualcomm Incorporated Multiple band voltage controlled oscillator using impedance scaling
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US6466099B2 (en) * 2001-01-03 2002-10-15 Motorola, Inc. Voltage controlled oscillator (VCO) in colpitts configuration
US6937195B2 (en) 2001-04-11 2005-08-30 Kyocera Wireless Corp. Inverted-F ferroelectric antenna
ATE405986T1 (de) * 2001-04-11 2008-09-15 Kyocera Wireless Corp Abstimmbare anpassschaltung
US6690251B2 (en) 2001-04-11 2004-02-10 Kyocera Wireless Corporation Tunable ferro-electric filter
US7746292B2 (en) 2001-04-11 2010-06-29 Kyocera Wireless Corp. Reconfigurable radiation desensitivity bracket systems and methods
US7720443B2 (en) 2003-06-02 2010-05-18 Kyocera Wireless Corp. System and method for filtering time division multiple access telephone communications
DE10337981A1 (de) * 2003-08-19 2005-03-17 Deutsche Thomson-Brandt Gmbh Schaltbarer abstimmbarer Schwingkreis mit reduzierten parasitären Kapazitäten
WO2005125004A1 (ja) 2004-06-18 2005-12-29 Mitsubishi Denki Kabushiki Kaisha 電圧制御発振器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1121439A (en) * 1965-08-03 1968-07-24 Int Standard Electric Corp Electronic tunable oscillator circuit
US3940714A (en) * 1973-12-27 1976-02-24 Alps Electric Co., Ltd. AFC circuit with improved sensitivity
US4288875A (en) * 1980-02-08 1981-09-08 Rca Corporation Controlled local oscillator with apparatus for extending its frequency range
DE3716878A1 (de) * 1987-05-20 1988-12-15 Philips Patentverwaltung Zf-oszillator fuer hf-tuner

Also Published As

Publication number Publication date
GB9022514D0 (en) 1990-11-28
DE4036866A1 (de) 1991-07-25
GB2240227A (en) 1991-07-24
GB2240227B (en) 1994-01-12
DE4036866C2 (de) 1996-10-02

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