JPH0373937B2 - - Google Patents
Info
- Publication number
- JPH0373937B2 JPH0373937B2 JP57124626A JP12462682A JPH0373937B2 JP H0373937 B2 JPH0373937 B2 JP H0373937B2 JP 57124626 A JP57124626 A JP 57124626A JP 12462682 A JP12462682 A JP 12462682A JP H0373937 B2 JPH0373937 B2 JP H0373937B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous thin
- recording medium
- thermal
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 10
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 150000001787 chalcogens Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000010512 thermal transition Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002737 metalloid compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
〔利用分野〕
本発明は光学的な記録媒体に関するものであ
り、レーザ光等の光及び熱エネルギーを用いて情
報を高密度に記録し、且つ再生可能な記録媒体に
関する。[Detailed Description of the Invention] [Field of Application] The present invention relates to an optical recording medium, and relates to a recording medium in which information can be recorded at high density using light such as a laser beam and thermal energy, and which can be reproduced. .
レーザ光線を利用して高密度な情報の記録・再
生を行う装置及び技術は公知である。そして光学
的記録材については、レーザ光の照射により、ビ
ツト（凹部）を形成するものと、照射部の光学的
特性（例えば、反射率、吸収係数、屈折率）を変
化させるものとがある。 Devices and techniques for recording and reproducing high-density information using laser beams are well known. Regarding optical recording materials, there are those that form bits (concave portions) by laser beam irradiation, and those that change the optical characteristics (eg, reflectance, absorption coefficient, refractive index) of the irradiated area.
前者は、レーザ光等のエネルギービームを照射
して、基板上の金属等の薄膜を溶解あるいは蒸発
させビツトを形成するものである。この方式の記
録材料の代表例としては、低融点金属であるBi、
Se、Te、Ge、In等の単体金属及び合金である。
後者は、レーザ光照射により、基板上の薄膜の光
学的な性質の変化を生ぜしめるものである。即
ち、物質の相転移あるいは原子間の結合状態を替
えて、反射率、透過率あるいは屈折率等の光学的
性質の変化を行うものである。本発明は、斯かる
後者の方式に関する。 The former method involves melting or vaporizing a thin film of metal or the like on a substrate by irradiating it with an energy beam such as a laser beam, thereby forming a bit. Typical examples of recording materials for this method include Bi, a low melting point metal;
Single metals and alloys such as Se, Te, Ge, In, etc.
The latter causes a change in the optical properties of a thin film on a substrate by laser beam irradiation. That is, optical properties such as reflectance, transmittance, or refractive index are changed by changing the phase transition of a substance or the bonding state between atoms. The present invention relates to the latter method.
前記光学的性質の変化を利用する記録材料の代
表例としてカルコゲン化物が知られている。即
ち、酸素を除く周期率表の第六族の元素Ｓ、Se、
Te等の金属あるいは半金属の化合物薄膜である。
例えば、特公昭54−3725号にテルル低酸化物
TeOx（Ｏ＜ｘ＜2.0）を主成分とする材料につい
て報告されている。
Chalcogenides are known as typical examples of recording materials that utilize the change in optical properties. That is, elements S, Se, and Group 6 elements of the periodic table excluding oxygen.
It is a thin film of a metal or metalloid compound such as Te.
For example, in Special Publication No. 54-3725, tellurium low oxide
Materials whose main component is TeOx (O<x<2.0) have been reported.
これは、非晶質状態から結晶状態あるいは他の
非晶質状態への相転移による光学的特性への変化
によるものである。テルル低酸化物はレーザ光照
射による加熱昇温により黒化する。熱黒化転移温
度はTe成分の量により異なり、Te成分が多いと
転移温度が低く、反対にTe成分が少ないと転移
温度は高い。ｘ＝0.3〜1.2の間で、熱黒化転移温
度は80℃〜150℃である。TeOx、ｘ＝1.1の薄膜
（厚み1200Å）について、半導体レーザ波長で透
過率が15％から５％へと減少し、反射率が15％か
ら30％へと増加する。 This is due to a change in optical properties due to a phase transition from an amorphous state to a crystalline state or another amorphous state. Tellurium low oxide turns black when heated and heated by laser beam irradiation. Thermal blackening transition temperature varies depending on the amount of Te component; the higher the Te component, the lower the transition temperature; conversely, the lower the Te component, the higher the transition temperature. When x=0.3-1.2, the thermal blackening transition temperature is 80°C-150°C. For a thin film of TeOx, x=1.1 (thickness 1200 Å), the transmittance decreases from 15% to 5% and the reflectance increases from 15% to 30% at the semiconductor laser wavelength.
ところで、信号を記録再生する場合、Ｓ／Ｎ比
の点から光学的特性変化が大きいことが望まし
い。従来の記録材料では、光学的特性変化が未だ
不充分である。 By the way, when recording and reproducing signals, it is desirable that the optical characteristics change largely from the viewpoint of the S/N ratio. Conventional recording materials still have insufficient changes in optical properties.
光学的特性変化特に透過率の変化が大きい記録
媒体を提供することを目的とする。そして、記録
媒体の透過率の変化を利用しながら、読出し（再
生）形式を反射型（再生用レーザ照射手段と読出
し手段がデイスクの同一側にある型式）とするこ
とを可能とするものである。
It is an object of the present invention to provide a recording medium that exhibits large changes in optical characteristics, particularly in transmittance. It also makes it possible to use a reflective type readout (reproduction) format (a type in which the reproduction laser irradiation means and the readout means are on the same side of the disk) while making use of changes in the transmittance of the recording medium. .
カルコゲン元素Teと他の酸化物により、効果
的に非晶質状態を得て、カルコゲン元素の特徴
（光学的変化）を用いるものである。酸化物を用
いる理由は、一般に酸化物は透明のものが多く、
初期光学的濃度を小さく出来るからである。そし
て、この非晶質薄膜に対して、反射層を設けるこ
とにより、反射型続出しを可能とする。
This method effectively obtains an amorphous state by using the chalcogen element Te and other oxides, and uses the characteristics (optical changes) of the chalcogen element. The reason for using oxides is that oxides are generally transparent;
This is because the initial optical density can be reduced. Further, by providing a reflective layer on this amorphous thin film, reflective type continuous application is made possible.
さらに、非晶質薄膜と反射層との間に介在され
る熱絶縁層を設けることにより、熱定数を調整す
る、すなわち熱拡散を防止する。また、非晶質薄
膜の入射光表面の光反射を防止する反射防止膜を
設けることにより、記録または再生時の照射ビー
ムの散乱を防止する。 Furthermore, by providing a thermal insulating layer interposed between the amorphous thin film and the reflective layer, the thermal constant is adjusted, that is, thermal diffusion is prevented. Furthermore, by providing an antireflection film that prevents light reflection on the surface of the amorphous thin film upon which light is incident, scattering of the irradiation beam during recording or reproduction is prevented.
本発明に係る記録媒体はテルル（Te）、シリコ
ン（Si）及び酸素（Ｏ）からなる。即ち、透過率
の高い酸化シリコンSiOx（０＜Ｘ≦２）とテルル
（Te）とからなる非晶質薄膜を用いる。薄膜の組
成は
TeYSiOx100-Y
（Ｙはモル％、０＜Y100、０＜ｘ≦２）
である。Ｙ＝45、Ｘ＝２、膜厚1500Åなる場合、
第１図に示すような熱転移による反射率及び透過
率の変化をした。熱転移温度は約130℃である。
この熱転移により半導体レーザ波長（8000Å）に
於いて透過率は56％から20％へと減少し、また反
射率は20％から40％へと増加した。
The recording medium according to the present invention is made of tellurium (Te), silicon (Si), and oxygen (O). That is, an amorphous thin film made of silicon oxide SiOx (0<X≦2) with high transmittance and tellurium (Te) is used. The composition of the thin film is Te Y SiOx 100-Y (Y is mol%, 0<Y100, 0<x≦2). When Y = 45, X = 2, and the film thickness is 1500 Å,
The reflectance and transmittance changed due to thermal transition as shown in FIG. The thermal transition temperature is approximately 130°C.
Due to this thermal transition, the transmittance decreased from 56% to 20% at the semiconductor laser wavelength (8000 Å), and the reflectance increased from 20% to 40%.
一酸化シリコン（SiO）とテルル（Te）との
非晶質状態に於いても殆んど同様の効果が得られ
た。即ち、SiO2がSiOx（０＜ｘ≦２）となつて
も、形成される非晶質状態薄膜の転移温度及び光
学的特性変化に大きな差がないことを示してい
る。 Almost the same effect was obtained in the amorphous state of silicon monoxide (SiO) and tellurium (Te). That is, it is shown that even if SiO 2 becomes SiOx (0<x≦2), there is no significant difference in the transition temperature and optical property change of the formed amorphous state thin film.
次に第２図を参照して、上記材料を利用した記
録媒体について説明する。基板１としては、ガラ
ス板若しくはポリメチルメタクレート樹脂、ポリ
塩化ビニール樹脂、ポリカーボネート樹脂、ポリ
エチルテレフタレート樹脂等の合成樹脂シート若
しくはフイルムを用いる。この基板１上に反射層
２を設ける。この反射層としてはAg、Al、Au等
再生レーザ光波長（8000Å）に於いて反射率の高
いものを用いる。厚みは300〜2000Å程度する。
この上に熱定数等を調整する為に熱絶縁層３を設
ける。これは、テルル・酸化シリコン薄膜の熱黒
化転移を低パワーのレーザ光にて生ぜしめる為の
ものである。この熱絶縁層として、酸化シリコ
ン、プラズマ重合膜、合成樹脂等が効果的であ
る。この上に、テルル・酸化シリコンの非晶質薄
膜４を形成する。その組成は上述した通りであ
る。更にこの上に、非晶質薄膜４の反射防止膜５
を設ける。例えば、酸化シリンコンを用いると、
好都合である。この第２図に示す実施例の場合に
は、上方（基板側でない方）より再生レーザ光を
照射し、非晶質薄膜４を通過し、反射層２にて反
射されたレーザ光を、同じく上方に配置された読
出し手段（図示せず）で受けることにより、情報
を再生することができる。 Next, a recording medium using the above material will be explained with reference to FIG. As the substrate 1, a glass plate or a synthetic resin sheet or film such as polymethyl methacrylate resin, polyvinyl chloride resin, polycarbonate resin, or polyethyl terephthalate resin is used. A reflective layer 2 is provided on this substrate 1. As this reflective layer, a material having a high reflectance at the reproduction laser beam wavelength (8000 Å), such as Ag, Al, or Au, is used. The thickness is approximately 300 to 2000 Å.
A thermal insulating layer 3 is provided on this in order to adjust the thermal constant and the like. This is to cause a thermal blackening transition in the tellurium/silicon oxide thin film using a low power laser beam. Silicon oxide, plasma polymerized film, synthetic resin, etc. are effective as this thermal insulating layer. On top of this, an amorphous thin film 4 of tellurium/silicon oxide is formed. Its composition is as described above. Furthermore, on top of this, an antireflection coating 5 of the amorphous thin film 4 is applied.
will be established. For example, using silicon oxide,
It's convenient. In the case of the embodiment shown in FIG. 2, the reproduction laser beam is irradiated from above (the side other than the substrate side), and the laser beam that passes through the amorphous thin film 4 and is reflected by the reflective layer 2 is also The information can be reproduced by being received by a reading means (not shown) disposed above.
第３図は他の実施例を示すものであり、基板１
上に、反射防止膜５、非晶質薄膜４、熱絶縁層
３、反射層２をこの順序にて積層したものであ
る。この場合には、再生レーザ光源及び読出し手
段は共に、基板側に配置される。 FIG. 3 shows another embodiment, in which the substrate 1
An antireflection film 5, an amorphous thin film 4, a thermal insulation layer 3, and a reflective layer 2 are laminated thereon in this order. In this case, both the reproducing laser light source and the reading means are arranged on the substrate side.
カルコゲン元素特有の光学的特性変化を示すテ
ルル・酸化シリコンからなる非晶質薄膜を用いた
ので、従来に比例して大きな光学的特性変化（特
に透過率の変化）が得られた。そして、反射層を
設けたので、透過率の変化を利用しながら、反射
型の読出し形式が可能である。
Since we used an amorphous thin film made of tellurium/silicon oxide, which exhibits changes in optical properties unique to chalcogen elements, we were able to obtain large changes in optical properties (especially changes in transmittance) in proportion to conventional methods. Since a reflective layer is provided, a reflective readout format is possible while utilizing changes in transmittance.
また、非晶質薄膜と反射層との間に介在される
熱絶縁層を設けたため、記録時の熱拡散を防ぎ、
記録効率を高めることができる。また、非晶質薄
膜の入射光表面の光反射を防止する反射防止膜を
設けることにより、記録または再生時の照射ビー
ムを散乱させることなく媒体内に導くことがで
き、記録及び再生時の照射ビームの利用効率を高
めることができる。 In addition, a thermal insulation layer is provided between the amorphous thin film and the reflective layer to prevent heat diffusion during recording.
Recording efficiency can be improved. In addition, by providing an anti-reflection film that prevents light reflection on the surface of the amorphous thin film where incident light is incident, the irradiation beam during recording or reproduction can be guided into the medium without scattering. Beam usage efficiency can be increased.
第１図は本発明に係る記録媒体の特性を示す
図、第２図は本発明に係る記録媒体の一実施例の
構成を示す図、第３図は他の実施例を示す図であ
る。
１……基板、２……反射層、４……非晶質薄
膜。
FIG. 1 is a diagram showing the characteristics of a recording medium according to the invention, FIG. 2 is a diagram showing the configuration of one embodiment of the recording medium according to the invention, and FIG. 3 is a diagram showing another embodiment. 1...Substrate, 2...Reflection layer, 4...Amorphous thin film.
Claims (1)
光学特性変化を得る光学記録媒体であつて、テル
ル（Te）と酸化シリコン（SiOx）を主成分とす
る非晶質薄膜と、この薄膜を透過した光を反射す
る反射層と、前記非晶質薄膜と反射層との間に介
在され熱定数を調整する熱絶縁層と、前記非晶質
薄膜の入射光表面の光反射を防止する反射防止膜
とを有することを特徴とする光学記録媒体。 ２ 前記非晶質薄膜が、TeYSiOx100-Y（但し、０
＜ｘ≦２、０＜Ｙ＜100、Ｙはモル％）を主成分
とすることを特徴とする特許請求の範囲第１項記
載の光学記録媒体。[Claims] 1. An optical recording medium whose optical characteristics change by optical or thermal energy irradiation, which comprises an amorphous thin film whose main components are tellurium (Te) and silicon oxide (SiOx); a reflective layer that reflects light transmitted through the thin film; a thermal insulation layer that is interposed between the amorphous thin film and the reflective layer to adjust a thermal constant; and prevents light reflection on the surface of the amorphous thin film upon which light is incident. An optical recording medium comprising an antireflection film. 2 The amorphous thin film is Te Y SiOx 100-Y (however, 0
The optical recording medium according to claim 1, characterized in that the main component is <x≦2, 0<Y<100, where Y is mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124626A JPS5916154A (en) | 1982-07-16 | 1982-07-16 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124626A JPS5916154A (en) | 1982-07-16 | 1982-07-16 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5916154A JPS5916154A (en) | 1984-01-27 |
| JPH0373937B2 true JPH0373937B2 (en) | 1991-11-25 |
Family
ID=14890068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57124626A Granted JPS5916154A (en) | 1982-07-16 | 1982-07-16 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916154A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005078297A1 (en) | 2004-02-12 | 2005-08-25 | Ntn Corporation | Shell type needle roller bearing, support structure of compressor spindle, and support structure of piston pump drive part |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH066393B2 (en) * | 1984-03-07 | 1994-01-26 | 株式会社日立製作所 | How to record and delete information |
| JPS6144690A (en) * | 1984-08-10 | 1986-03-04 | Res Dev Corp Of Japan | Photo-recording material |
| US4653024A (en) * | 1984-11-21 | 1987-03-24 | Energy Conversion Devices, Inc. | Data storage device including a phase changeable material |
| JP2833556B2 (en) * | 1995-12-15 | 1998-12-09 | 株式会社日立製作所 | Information recording member |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57208648A (en) * | 1981-06-12 | 1982-12-21 | Rca Corp | Recording medium |
| JPS5854338A (en) * | 1981-09-28 | 1983-03-31 | Matsushita Electric Ind Co Ltd | Optical recording medium |
| JPS58222891A (en) * | 1982-06-22 | 1983-12-24 | Sanyo Electric Co Ltd | Optical recording medium |
-
1982
- 1982-07-16 JP JP57124626A patent/JPS5916154A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57208648A (en) * | 1981-06-12 | 1982-12-21 | Rca Corp | Recording medium |
| JPS5854338A (en) * | 1981-09-28 | 1983-03-31 | Matsushita Electric Ind Co Ltd | Optical recording medium |
| JPS58222891A (en) * | 1982-06-22 | 1983-12-24 | Sanyo Electric Co Ltd | Optical recording medium |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005078297A1 (en) | 2004-02-12 | 2005-08-25 | Ntn Corporation | Shell type needle roller bearing, support structure of compressor spindle, and support structure of piston pump drive part |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5916154A (en) | 1984-01-27 |
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