JPH03250605A - Manufacture of voltage non-linearity resistor - Google Patents
Manufacture of voltage non-linearity resistorInfo
- Publication number
- JPH03250605A JPH03250605A JP2045727A JP4572790A JPH03250605A JP H03250605 A JPH03250605 A JP H03250605A JP 2045727 A JP2045727 A JP 2045727A JP 4572790 A JP4572790 A JP 4572790A JP H03250605 A JPH03250605 A JP H03250605A
- Authority
- JP
- Japan
- Prior art keywords
- bismuth oxide
- added
- oxide
- baking
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 36
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011787 zinc oxide Substances 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 238000010304 firing Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 1
- 238000009736 wetting Methods 0.000 abstract 1
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 8
- 239000000843 powder Substances 0.000 description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011268 mixed slurry Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- -1 ethylene, propylene Chemical group 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RMAZHXJOTXQSHU-HVYFOGIKSA-N (2s)-6-amino-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-amino-4-methylpentanoyl]amino]-3-methylbutanoyl]amino]-4-carboxybutanoyl]amino]-3-hydroxypropanoyl]amino]-3-hydroxypropanoyl]amino]hexanoic acid Chemical compound CC(C)C[C@H](N)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(=O)N[C@H](C(O)=O)CCCCN RMAZHXJOTXQSHU-HVYFOGIKSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は酸化亜鉛を主成分とする電圧非直線抵抗体の製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a voltage nonlinear resistor containing zinc oxide as a main component.
(従来の技術)
酸化亜鉛を主成分とする電圧非直線抵抗体は、そのすぐ
れた非直線電圧−電流特性から電圧安定化あるいはサー
ジ吸収を目的とした避雷器やサージアブソーバに広く利
用されている。この電圧非直線抵抗体は、主成分の酸化
亜鉛に電圧非直線性を発現する少量のビスマス、アンチ
モン、コバルト、マンガン等の酸化物を添加し、混合、
造粒、成形したのち焼成し、好ましくは側面高抵抗層を
形成するため無機物質を塗布した後再度焼成し、その焼
結体に電極を取り付けることにより作製することかでき
る。(Prior Art) Voltage nonlinear resistors containing zinc oxide as a main component are widely used in lightning arresters and surge absorbers for the purpose of voltage stabilization or surge absorption because of their excellent nonlinear voltage-current characteristics. This voltage nonlinear resistor is made by adding small amounts of oxides such as bismuth, antimony, cobalt, manganese, etc. that exhibit voltage nonlinearity to the main component, zinc oxide.
It can be produced by granulating, molding, firing, preferably applying an inorganic substance to form a side surface high resistance layer, firing again, and attaching electrodes to the sintered body.
こうした電圧非直線抵抗体を製造する際、従来は密閉筐
体内部に敷粉等を敷設し、積極的に筐体内の雰囲気保護
を行っていた。そして、焼成時には、生成分である酸化
亜鉛粒子を液相によって均一に濡らせるように、液相と
なる添加成分、特に酸化ビスマスを所定量必ず加える必
要かある。When manufacturing such a voltage nonlinear resistor, conventionally, a bedding powder or the like was placed inside a sealed casing to actively protect the atmosphere inside the casing. During firing, it is necessary to always add a predetermined amount of additive components, particularly bismuth oxide, to form a liquid phase so that the produced zinc oxide particles are uniformly wetted by the liquid phase.
(発明か解決しようとする課題)
しかし、酸化ビスマスは、焼成後も酸化亜鉛に固溶せず
、酸化亜鉛粒子間に粒界を形成する。このため、酸化ビ
スマスの添加量が多いと、この粒界か厚くなり、これに
起因して電圧非直線抵抗体のサージ耐量、課電寿命及び
誘電率特性か低下し、平坦率か増大した。(Problems to be Solved by the Invention) However, even after firing, bismuth oxide does not form a solid solution in zinc oxide, and grain boundaries are formed between zinc oxide particles. For this reason, when the amount of bismuth oxide added is large, this grain boundary becomes thicker, and as a result, the surge withstand capacity, electrification life, and dielectric constant characteristics of the voltage nonlinear resistor decrease, and the flatness ratio increases.
その一方、酸化ビスマスの添加量を少なくすると、焼成
時に酸化亜鉛粒子表面の濡れか不充分となり、酸化亜鉛
粒子の焼結か進まない。On the other hand, if the amount of bismuth oxide added is small, the surface of the zinc oxide particles will not be sufficiently wetted during firing, and the sintering of the zinc oxide particles will not proceed.
本発明の課題は、上記の問題を克服でき、放電耐量、課
電寿命、誘電率の向上か可能で、平坦率を低減できるよ
うな電圧非直線抵抗体の製造方法を提供することである
。An object of the present invention is to provide a method for manufacturing a voltage nonlinear resistor that can overcome the above-mentioned problems, improve discharge withstand capacity, energized life, and dielectric constant, and reduce flatness.
(課題を解決するための手段)
本発明は、酸化亜鉛を主成分として含有しかつ少なくと
も酸化ビスマスを添加成分として含有する混合物を、造
粒、成形、焼成して電圧非直線抵抗体を製造する方法に
おいて、前記混合物へ添加した酸化ビスマスの添加重量
のうち10%以上を前記焼成時に飛散除去し、焼成後の
酸化ビスマスの電圧非直線抵抗体中における含有率を6
重量%以下としたことを特徴とする電圧非直線抵抗体の
製造方法に係るものである。(Means for Solving the Problems) The present invention produces a voltage nonlinear resistor by granulating, molding, and firing a mixture containing zinc oxide as a main component and at least bismuth oxide as an additive component. In the method, at least 10% of the added weight of bismuth oxide added to the mixture is scattered and removed during the firing, and the content of bismuth oxide in the voltage nonlinear resistor after firing is reduced to 6.
The present invention relates to a method for manufacturing a voltage nonlinear resistor, characterized in that the amount is less than or equal to % by weight.
(作 用)
本発明に係る電圧非直線抵抗体の製造方法によれは、焼
成後の酸化ビスマスの電圧非直線抵抗体中における含有
率を6重量06以下(好ましくは0.5〜4重量96)
としたのて、酸化ビスマスか粒界層に過剰に存在するこ
とによる酸化亜鉛素子の特性に及ぼす悪影響を抑制でき
、平坦率、誘電率、放電耐量を良好とてきる。仮に、こ
の酸化ヒスマスの含有率か6重量%を越えると平坦率か
増大し、誘電率及び放電耐量か低下する。(Function) According to the method for manufacturing a voltage nonlinear resistor according to the present invention, the content of bismuth oxide in the voltage nonlinear resistor after firing is 6% by weight or less (preferably 0.5 to 4% by weight). )
Therefore, the adverse effect on the characteristics of the zinc oxide element due to the excessive presence of bismuth oxide in the grain boundary layer can be suppressed, and the flatness, dielectric constant, and discharge durability can be improved. If the content of hismuth oxide exceeds 6% by weight, the flatness will increase and the dielectric constant and discharge withstand capacity will decrease.
そして、本発明においては、注目すべきことに、混合物
へと添加した酸化ビスマスの添加量のうち10%以上(
好ましくは15〜25重量%)を焼成時に飛散除去して
いる。従って、最初は酸化ビスマスをその最適添加量よ
りも、焼成時に飛散除去する分だけ過剰に添加すること
かできる。即ち、最初の混合物の段階では酸化ビスマス
を過剰に添加し、焼成時に酸化亜鉛粒子表面の濡れ性を
高め、かつ焼成時にこの酸化ビスマスの添加量のうち1
0%以上を飛散除去することて、最終的に焼結体中の酸
化亜鉛の含有率を6重量%以下とてきるのである。In the present invention, it is noteworthy that 10% or more of the amount of bismuth oxide added to the mixture (
Preferably 15 to 25% by weight) is scattered and removed during firing. Therefore, initially, bismuth oxide can be added in excess of its optimum addition amount by the amount to be scattered and removed during firing. That is, at the initial mixture stage, bismuth oxide is added in excess to increase the wettability of the zinc oxide particle surface during firing, and at the time of firing, one of the added amounts of bismuth oxide is
By scattering and removing 0% or more, the final content of zinc oxide in the sintered body can be reduced to 6% by weight or less.
この際、酸化ビスマスの添加量のうち10%以上を焼成
時に飛散除去したのは、これか1096未満ては放電耐
量及び誘電率の向上かさほど認められないからである。At this time, 10% or more of the added amount of bismuth oxide was scattered and removed during firing because if it was less than 1096, no significant improvement in discharge withstand capacity and dielectric constant was observed.
このように、焼成時に酸化ビスマスを飛散除去するには
、例えば以下の方法を採用することか好ましい。In order to scatter and remove bismuth oxide during firing in this way, it is preferable to employ, for example, the following method.
即ち、従来は、前記したように焼成用の筐体を密封し、
雰囲気保護を行なうことか必須のものと考えられていた
。That is, conventionally, as described above, the firing casing was sealed,
It was considered essential to protect the atmosphere.
しかし、本発明の構成を実現するには、この常識とは全
く逆に、焼成用の筐体に例えば窓を設けて通気性とし、
本焼成時に雰囲気を減圧状態として酸化ビスマスを飛散
させる。この際、更に好ましくは、1000〜1300
°C(好ましくは1100〜1250°C)の温度で密
閉状態でまず焼成を行い、次いて一旦900°C以上の
温度(好ましくは900〜1050°C)へと下げた後
に減圧状態とし、所定時間保持して酸化ビスマスの飛散
除去を行う。However, in order to realize the configuration of the present invention, contrary to this common sense, for example, a window is provided in the baking casing to make it breathable.
During the main firing, the atmosphere is reduced in pressure to scatter bismuth oxide. At this time, more preferably 1000 to 1300
First, firing is performed in a closed state at a temperature of 1100 to 1250 °C, and then once the temperature is lowered to 900 °C or higher (preferably 900 to 1050 °C), the pressure is reduced to a predetermined temperature. Hold for a certain amount of time to remove bismuth oxide.
酸化ビスマスの飛散を行う際、筐体内圧力は100〜7
00Torrとすると好ましく、250〜550 To
rrとすると更に好ましい。これか100 Torr以
下てはバリスタ特性か低下し、700 Torrを越え
ると酸化ヒスマスの飛散量か低下する。また、この際、
一定時間、温度を900°C以上、例えは1000°C
に保持する場合には、この温度保持時間は4〜10時間
とするのか好ましい。When scattering bismuth oxide, the pressure inside the housing is 100-7
It is preferable to set it to 00Torr, and 250 to 550Torr.
It is more preferable to set it to rr. If the temperature is less than 100 Torr, the varistor characteristics will deteriorate, and if it exceeds 700 Torr, the amount of hismuth oxide scattered will decrease. Also, at this time,
Temperature of 900°C or higher, for example 1000°C, for a certain period of time
When the temperature is maintained at a temperature of 4 to 10 hours, it is preferable to maintain the temperature for 4 to 10 hours.
酸化ヒスマスを三酸化ヒスマスとした場合は特に顕著な
効果か得られ好ましい。It is preferable to use hismuth trioxide instead of hismuth oxide because a particularly remarkable effect can be obtained.
なお、本発明によって製造した電圧非直線抵抗体を、ギ
ャップ付避雷器に適用すると、この抵抗体の誘電率を高
くてきる(例えは600以上)ことから、既存の鉄塔に
予め取り付けられているアークホーンとの絶縁強調の点
て非常に有利となる。In addition, when the voltage nonlinear resistor manufactured according to the present invention is applied to a lightning arrester with a gap, the dielectric constant of this resistor becomes high (for example, 600 or more). This is very advantageous in terms of insulation from the horn.
即ち、ギャップ付避雷器とは、概念的には碍子装置のア
ークホーンに避雷機能を持たせたもので、限流要素部と
直列ギャップとから構成される。限流要素部は電圧非直
線抵抗特性を有する酸化亜鉛素子を直列に接続し、絶縁
物(碍管)内に収納し、あるいは絶縁物(エチレン、プ
ロピレンゴム)によりモールドしたものである。これに
より、送電線への落雷で鉄塔電位か上昇したときに直列
ギャップで放電させ、短時間のうちに限流要素部の非直
線抵抗特性を利用して続流を遮断し、変電所の遮断器か
動作することによる停電の防止を狙っている。That is, a lightning arrester with a gap is conceptually an arc horn of an insulator device provided with a lightning arresting function, and is composed of a current limiting element portion and a series gap. The current limiting element is made by connecting zinc oxide elements having non-linear voltage resistance characteristics in series and housing them in an insulator (porcelain tube) or molded with an insulator (ethylene, propylene rubber). As a result, when the potential of the steel tower rises due to a lightning strike on a power transmission line, it is discharged in the series gap, and the non-linear resistance characteristics of the current limiting element are used to interrupt the follow-on current in a short period of time, shutting down the substation. The aim is to prevent power outages due to equipment operation.
しかし、こうしたギャップ付避雷器では、限流要素部を
既存の鉄塔間に新たに挿入し、取り付けなければならな
いので、既存のアークホーンとの絶縁協調か問題であり
、落雷時に直列ギャップに閃絡させてアークホーンでの
閃絡を防止する必要がある。この点、本発明によって製
造した電圧非直線抵抗体であれば、誘電率が高いので、
直列ギャップで閃絡するフラッシュオーバー電圧を低減
することかできるため、既存のアークホーンとの絶縁強
調が容易である。However, with such a lightning arrester with a gap, the current limiting element must be newly inserted and installed between the existing towers, so there is a problem with insulation coordination with the existing arcing horn, and there is a risk of flashing across the series gap in the event of a lightning strike. It is necessary to prevent flashovers at the arc horn. In this regard, since the voltage nonlinear resistor manufactured according to the present invention has a high dielectric constant,
Since it is possible to reduce the flashover voltage that occurs in the series gap, it is easy to enhance insulation with existing arcing horns.
(実施例)
酸化亜鉛を主成分とする電圧非直線抵抗体を得るには、
まず所定の粒度に調整した酸化亜鉛原料と所定の粒度に
調整した酸化ビスマス、酸化コバルト、酸化マンガン、
酸化アンチモン、酸化クロム、好ましくは非晶質の酸化
ケイ素、酸化ニッケル、酸化ホウ素、酸化銀等よりなる
添加物の所定量を混合する。なお、この場合酸化銀、酸
化ホウ素の代わりに硝酸銀、ホウ酸を用いてもよい。好
ましくは銀を含むホウケイ酸ヒスマスガラスを用いると
よい。また、添加物を800〜1000°Cて仮焼した
後粉砕し、所定粒度に調整したものと酸化亜鉛原料を混
合してもよい。この際、これらの原料粉末に対して所定
量のポリビニルアルコール水溶液等を加える。(Example) To obtain a voltage nonlinear resistor whose main component is zinc oxide,
First, zinc oxide raw material adjusted to a predetermined particle size, bismuth oxide, cobalt oxide, manganese oxide, adjusted to a predetermined particle size,
A predetermined amount of additives such as antimony oxide, chromium oxide, preferably amorphous silicon oxide, nickel oxide, boron oxide, silver oxide, etc. are mixed. In this case, silver nitrate or boric acid may be used instead of silver oxide or boron oxide. Preferably, hismuth borosilicate glass containing silver is used. Alternatively, the additive may be calcined at 800 to 1000°C, then pulverized and adjusted to a predetermined particle size, and the zinc oxide raw material may be mixed with the additive. At this time, a predetermined amount of polyvinyl alcohol aqueous solution or the like is added to these raw material powders.
次に好ましくは200 mmHg以下の真空度で減圧脱
気を行い、混合泥漿の水分量は30〜3sivt%程度
に、またその混合泥漿の粘度は100±50cpとする
のか好ましい。次に得られた混合泥漿を噴霧乾燥装置に
供給して平均粒径50〜150μm1好ましくは80〜
120μIで、水分量か0.5〜2.0wt%、より好
ましくは0.9〜1.5wt%の造粒粉を造粒する。次
に得られた造粒粉を、成形工程において、成形圧力80
0〜1000kg/ cm 2の下で所定の形状に成形
する。Next, degassing is preferably carried out under a vacuum degree of 200 mmHg or less, and the water content of the mixed slurry is preferably about 30 to 3 sivt%, and the viscosity of the mixed slurry is preferably 100±50 cp. Next, the obtained mixed slurry is fed to a spray dryer to obtain an average particle size of 50 to 150 μm, preferably 80 to 150 μm.
Granulated powder with a moisture content of 0.5 to 2.0 wt%, more preferably 0.9 to 1.5 wt%, is granulated at 120 μI. Next, the obtained granulated powder was subjected to a molding process at a molding pressure of 80
It is molded into a predetermined shape under 0 to 1000 kg/cm2.
次に、その成形体を昇降温速度50〜70°C/hr、
温度800〜900°C1保持時間1〜5時間という条
件で仮焼成する。なお、仮焼成の前に成形体を昇降温速
度10〜100°C/hrて400〜600°C1保持
時間1〜10時間で結合剤等有機成分を飛散除去すると
好ましい。Next, the molded body was heated and cooled at a heating and cooling rate of 50 to 70°C/hr.
Preliminary firing is performed at a temperature of 800 to 900° C. and a holding time of 1 to 5 hours. Note that, before calcining, it is preferable to remove organic components such as the binder by scattering the molded body at a heating/lowering rate of 10 to 100°C/hr and holding time at 400 to 600°C for 1 to 10 hours.
次に、仮焼体の側面に高抵抗層を形成する。本例てはB
i2O3,5b203. ZnO,5io2等の所定量
に有機結合剤としてエチルセルロース、ブチルカルピト
ール、酢酸nブチル等を加えた絶縁被覆用混合物ペース
トを、60〜300μmの厚さに仮焼体の側面に塗布す
る。Next, a high resistance layer is formed on the side surface of the calcined body. In this example, B
i2O3,5b203. An insulating coating mixture paste prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to a predetermined amount of ZnO, 5io2, etc. is applied to the side surface of the calcined body to a thickness of 60 to 300 μm.
次に、これを昇降温速度20〜100°C/hr、最高
保持温度1000〜1300°C好ましくは1050〜
1250°Cという条件で本焼成する。そして、本発明
の電圧非直線抵抗体を製造するためには、前記したよう
に、−旦高温で本焼成した後、900〜1050°Cま
て温度を下げ、この温度で筐体内を減圧し、所定時間温
度を一定に保持して三酸化ビスマスの飛散除去を行う。Next, this is heated at a temperature raising/lowering rate of 20 to 100°C/hr and a maximum holding temperature of 1000 to 1300°C, preferably 1050 to 1000°C.
Main firing is performed at 1250°C. In order to manufacture the voltage nonlinear resistor of the present invention, as described above, - after first firing at a high temperature, the temperature is lowered to 900 to 1050°C, and the pressure inside the housing is reduced at this temperature. , the temperature is held constant for a predetermined period of time to remove bismuth trioxide by scattering.
なお、ガラス粉末に有機結合剤としてエチルセルロース
、ブチルカルピトール、酢酸nブチル等を加えたガラス
ペーストを前記側面の高抵抗層上に100〜300μm
の厚さに塗布し、空気中で昇降温速度50〜200°C
/hr、400〜900 ’C1保持時間0.5〜4時
間という条件て熱処理することによりガラス層を形成す
ると好ましい。In addition, a glass paste made by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder is applied to the high resistance layer on the side surface to a thickness of 100 to 300 μm.
Apply the coating to a thickness of 50-200°C in air
It is preferable to form the glass layer by heat treatment under the conditions of /hr, 400 to 900'C1 holding time of 0.5 to 4 hours.
その後、得られた電圧非直線抵抗体の両端面をSiC,
Al2O3,ダイヤモンド等の#400〜# 2000
相当の研磨剤により水好ましくは油を研磨液として使用
して研磨する。次に、研磨面を洗浄後、研磨した両端面
に例えばアルミニウム等によって電極を例えば溶射によ
り設けて電圧非直線抵抗体を得る。After that, both end faces of the obtained voltage nonlinear resistor were bonded to SiC,
#400 to #2000 such as Al2O3, diamond, etc.
Polishing is performed with a suitable abrasive using water, preferably oil, as the polishing fluid. Next, after cleaning the polished surface, electrodes made of aluminum or the like are provided on both polished end surfaces by, for example, thermal spraying to obtain a voltage nonlinear resistor.
以下、実際に本発明の範囲内および範囲外の電圧非直線
抵抗体において、各種特性を測定した結果について説明
する。Hereinafter, the results of actually measuring various characteristics of voltage nonlinear resistors within and outside the scope of the present invention will be described.
実施例1
上述した方法に従って、表1に示す所定量のB120a
、 CO2O31,0モル%、Mn0z 0.5モル
%、5b2031.0モル0う、Cr2(L+ 0.5
モルOも、NiO1,0モル06、SiO□1.0モル
%および残部かZnOからなる原料に、ホウケイ酸ヒス
マスガラスを外記て0.1wt%添加し、この混合物を
成形、仮焼、高抵抗層形成、焼成等し、直径47皿、厚
さ22.5mmの表1に示す本発明例及び比較例の電圧
非直線抵抗体を製造した。但し、本焼成工程は、図面に
示すような昇温−温度保持−降温スケジュールで行った
。即ち、まず常圧で50℃/hrの速度で昇温し、12
00℃で5時間保持し、60°C/hrの速度で100
0°Cまて降温した。次いて、筐体内(窯内)を表1に
示す圧力にまで減圧し、1000°Cの温度て表1に示
す所定時間の間保持した。次いて、窯内を常圧に戻し、
60°C/hrの速度で隆温しな。IQOO’Cての保
持時間とこのときの窯内圧力を種々変化させることによ
り、三酸化ビスマスの飛散量を変化させた。Example 1 A predetermined amount of B120a shown in Table 1 was prepared according to the method described above.
, CO2O3 1.0 mol%, Mn0z 0.5 mol%, 5b2031.0 mol 0u, Cr2(L+ 0.5
For the mol O, 0.1 wt% of hismuth borosilicate glass is added to a raw material consisting of 1.0 mol 06 of NiO, 1.0 mol% of SiO□ and the balance ZnO, and this mixture is molded, calcined, and has a high resistance. By forming layers, firing, etc., voltage nonlinear resistors of the present invention examples and comparative examples shown in Table 1 having a diameter of 47 plates and a thickness of 22.5 mm were manufactured. However, the main firing step was performed according to a temperature increase-temperature maintenance-temperature decrease schedule as shown in the drawings. That is, first, the temperature was raised at a rate of 50°C/hr at normal pressure, and 12
Hold at 00°C for 5 hours and 100°C at a rate of 60°C/hr.
The temperature dropped to 0°C. Next, the pressure inside the housing (inside the kiln) was reduced to the pressure shown in Table 1, and the temperature was maintained at 1000°C for the predetermined time shown in Table 1. Next, return the inside of the kiln to normal pressure,
Heat up at a rate of 60°C/hr. The amount of bismuth trioxide scattered was varied by varying the holding time of IQOO'C and the pressure inside the kiln at this time.
こうして得た各電圧非直線抵抗体につき、それぞれ誘電
率(ε)、ΔV、。A (%)及び平坦率V 40 K
A/ V I mAを測定した。△V1..A (%
)は、雷サージ(100KA)印加後のV ImAの変
化率てあり、
平坦率vaoい/■
は40KAと1 m、4とにおけ
る制限電圧の比である。For each voltage nonlinear resistor obtained in this way, the dielectric constant (ε) and ΔV, respectively. A (%) and flatness rate V 40 K
A/VI mA was measured. △V1. .. A (%
) is the rate of change in V ImA after the application of a lightning surge (100 KA), and the flatness ratio vao/■ is the ratio of the limiting voltage at 40 KA and 1 m, 4.
これらの測定結果を表1 に示す。These measurement results are shown in Table 1. Shown below.
表1の結果から解るように、本発明に従うことにより、
△v1ffiA、平坦率を小さくてき、同時に誘電率を
大きくすることかできる。また、1000°Cての保持
時間、窯内圧力を変化させることて、三酸化ビスマスの
飛散量を制御できる二とか明らかである。As can be seen from the results in Table 1, by following the present invention,
Δv1ffiA, it is possible to decrease the flatness rate and increase the dielectric constant at the same time. It is also clear that the amount of bismuth trioxide scattered can be controlled by changing the holding time at 1000°C and the pressure inside the kiln.
実施例2
実施例1におけると全く同様にして、表2に示す本発明
例及び比較例の各電圧非直線抵抗体を製造した。但し、
本実施例では、三酸化ビスマスの飛散量の割合はいずれ
も10%以上とし、焼成後の焼結体中の三酸化ビスマス
量を種々変化させた。Example 2 In exactly the same manner as in Example 1, voltage nonlinear resistors of the present invention examples and comparative examples shown in Table 2 were manufactured. however,
In this example, the proportion of the amount of bismuth trioxide scattered was 10% or more in all cases, and the amount of bismuth trioxide in the sintered body after firing was varied.
これらの各電圧非直線抵抗体につき、実施例1と同様の
測定を行った。結果を表2に示す。The same measurements as in Example 1 were performed for each of these voltage nonlinear resistors. The results are shown in Table 2.
表2に示す結果から解るように、焼結体中に残る三酩化
ヒスマスの量を6.0重量94以下とすることか重要で
ある。As can be seen from the results shown in Table 2, it is important to keep the amount of hismuth trierupide remaining in the sintered body to 6.0% by weight or less.
実施例3
実施例1と同様にして電圧非直線抵抗体を製造した。但
し、本実施例では、三酸化ビスマスの添加量は6.7重
量%に統一し、また1000°Cて三酸化ビスマスを飛
散させる際の保持時間はいずれも5時間とし、この時の
窯内圧力のみを表3に示すように種々変化させ、焼成時
のBizO+の飛散量を変化させて表3に示す各電圧非
直線抵抗体を製造した。そして、これらの各抵抗体につ
き、実施例1と同様の測定を行い、その結果を表3に示
した。Example 3 A voltage nonlinear resistor was manufactured in the same manner as in Example 1. However, in this example, the amount of bismuth trioxide added was unified to 6.7% by weight, and the holding time for scattering the bismuth trioxide at 1000°C was 5 hours in each case. Each voltage nonlinear resistor shown in Table 3 was manufactured by varying only the pressure as shown in Table 3 and varying the amount of BizO+ scattered during firing. Then, the same measurements as in Example 1 were performed for each of these resistors, and the results are shown in Table 3.
(発明の効果)
本発明に係る電圧非直線抵抗体の製造方法によれば、焼
成後の酸化ビスマスの電圧非直線抵抗体中における含有
率を6重量%以下としたので、焼結体中における酸化ビ
スマスの粒界層による悪影響を抑制でき、平坦率、誘電
率、放電耐量を良好とできる。(Effects of the Invention) According to the method for manufacturing a voltage non-linear resistor according to the present invention, the content of bismuth oxide in the voltage non-linear resistor after firing is 6% by weight or less. The adverse effects of the grain boundary layer of bismuth oxide can be suppressed, and the flatness, dielectric constant, and discharge resistance can be improved.
そして、混合物へと添加した酸化ビスマスの添加量のう
ち10%以上を焼成時に飛散除去しているので、混合物
へと添加する時点では、酸化ビスマスをその最適量より
も、焼成時に飛散除去する分だけ過剰に添加することが
できる。即ち、最初の段階では酸化ビスマスを過剰に添
加し、焼成時に酸化亜鉛粒子表面の濡れ性を高め、かつ
焼成時にこの酸化ビスマスの添加量のうち10%以上を
飛散除去することて、最終的に焼結体中の酸化ビスマス
粒界層を減らし、含有率を6重量%以下とてきる。従っ
て、焼成時に酸化亜鉛粒子の濡れ性の不足によって支障
か生ずることはなく、誘電率、放電耐量が劣化すること
はない。Since more than 10% of the amount of bismuth oxide added to the mixture is removed by scattering during firing, at the time of addition to the mixture, the amount of bismuth oxide to be removed by scattering during firing is less than the optimum amount. Can only be added in excess. That is, in the first stage, excessive bismuth oxide is added to increase the wettability of the zinc oxide particle surface during firing, and at least 10% of the added amount of bismuth oxide is removed by scattering during firing. The bismuth oxide grain boundary layer in the sintered body is reduced to bring the content to 6% by weight or less. Therefore, no problems occur due to insufficient wettability of the zinc oxide particles during firing, and the dielectric constant and discharge resistance do not deteriorate.
第1図は、本焼成工程において三酸化ビスマスを飛散除
去するための温度スケジュールを示すグラフである。
特
許
出
願
人
日
本
碍
子
株
式
%式%FIG. 1 is a graph showing a temperature schedule for scattering and removing bismuth trioxide in the main firing step. Patent applicant Nippon Insulator stock% formula%
Claims (1)
ビスマスを添加成分として含有する混合物を、造粒、成
形、焼成して電圧非直線抵抗体を製造する方法において
、前記混合物へと添加した酸化ビスマスの添加重量のう
ち10%以上を前記焼成時に飛散除去し、焼成後の酸化
ビスマスの電圧非直線抵抗体中における含有率を6重量
%以下としたことを特徴とする電圧非直線抵抗体の製造
方法。1. In a method for producing a voltage nonlinear resistor by granulating, molding, and firing a mixture containing zinc oxide as a main component and at least bismuth oxide as an additive component, the addition of bismuth oxide to the mixture. A method for manufacturing a voltage nonlinear resistor, characterized in that 10% or more of the weight of the voltage nonlinear resistor is scattered and removed during the firing, and the content of bismuth oxide in the voltage nonlinear resistor after firing is 6% by weight or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2045727A JPH0831362B2 (en) | 1990-02-28 | 1990-02-28 | Method of manufacturing voltage non-linear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2045727A JPH0831362B2 (en) | 1990-02-28 | 1990-02-28 | Method of manufacturing voltage non-linear resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03250605A true JPH03250605A (en) | 1991-11-08 |
JPH0831362B2 JPH0831362B2 (en) | 1996-03-27 |
Family
ID=12727354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2045727A Expired - Lifetime JPH0831362B2 (en) | 1990-02-28 | 1990-02-28 | Method of manufacturing voltage non-linear resistor |
Country Status (1)
Country | Link |
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JP (1) | JPH0831362B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116835973A (en) * | 2023-06-16 | 2023-10-03 | 华中科技大学 | Bismuth oxide coated zinc oxide powder and preparation method and application thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662301A (en) * | 1979-10-26 | 1981-05-28 | Tokyo Shibaura Electric Co | Method of manufacturing metal oxide nonnlinear resistor |
JPS5828802A (en) * | 1981-08-13 | 1983-02-19 | 株式会社東芝 | Method of producing voltage non-linear resistor |
-
1990
- 1990-02-28 JP JP2045727A patent/JPH0831362B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662301A (en) * | 1979-10-26 | 1981-05-28 | Tokyo Shibaura Electric Co | Method of manufacturing metal oxide nonnlinear resistor |
JPS5828802A (en) * | 1981-08-13 | 1983-02-19 | 株式会社東芝 | Method of producing voltage non-linear resistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116835973A (en) * | 2023-06-16 | 2023-10-03 | 华中科技大学 | Bismuth oxide coated zinc oxide powder and preparation method and application thereof |
CN116835973B (en) * | 2023-06-16 | 2024-06-04 | 华中科技大学 | Bismuth oxide coated zinc oxide powder and preparation method and application thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0831362B2 (en) | 1996-03-27 |
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