JPH03227008A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH03227008A JPH03227008A JP2292490A JP2292490A JPH03227008A JP H03227008 A JPH03227008 A JP H03227008A JP 2292490 A JP2292490 A JP 2292490A JP 2292490 A JP2292490 A JP 2292490A JP H03227008 A JPH03227008 A JP H03227008A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ceramic heater
- uniformity
- infrared rays
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 230000002787 reinforcement Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はＬＥＪ工の半導体製造装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus for LEJ manufacturing.
第２図は従来の半導体製造装置構成を示す正面図で、図
において、（１）はウェハ、（２）はプロキシミティ用
のビン、（３）はホットプレート、（４）はヒーターで
ある。FIG. 2 is a front view showing the configuration of a conventional semiconductor manufacturing apparatus. In the figure, (1) is a wafer, (2) is a bin for proximity, (3) is a hot plate, and (4) is a heater.
次に動作について説明する。ヒーター（４）によってプ
レート（３）は加熱され、このプレート（３）の上に、
プロキシミテイ用ビン（２）で約１ｍｍ 浮かしたウェ
ハ（１）は、所定の温度で所定の時間加熱される。次い
で、ウェハ（１）はプレート（３）から次の工程へ移動
する０
〔発明が解決しようとする課題〕
従来の半導体製造装置は以上のように構成されていたの
で、ホットプレートからの熱は空気を介した熱伝導のた
めウェハ温度の昇温特性が悪く、またウニへの大口径化
に伴ない、均一性を維持することが困難であるなどの問
題点があった。Next, the operation will be explained. The plate (3) is heated by the heater (4), and on this plate (3),
The wafer (1) suspended by about 1 mm in the proximity bin (2) is heated at a predetermined temperature for a predetermined time. Next, the wafer (1) is moved from the plate (3) to the next process. [Problem to be solved by the invention] Since the conventional semiconductor manufacturing equipment was configured as described above, the heat from the hot plate is There were problems such as poor heating characteristics of the wafer temperature due to heat conduction through air, and difficulty in maintaining uniformity as the diameter of the urchin became larger.
この発明は上記のような問題点を解消するためになされ
たもので、ウェハのベーク時の温度の昇温特性と均一性
がよく、ウニへの界面まで均一にレジストを硬化するこ
とのできる半導体装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and it is a semiconductor that has good temperature rise characteristics and uniformity when baking the wafer, and can harden the resist uniformly up to the interface with the wafer. The purpose is to obtain equipment.
この発明に係る半導体製造装置は、ニクロム式のヒータ
ーをなくシ、かわりに、遠赤外線にてつエムを加熱する
セラミック製のヒーターを設けたものである。The semiconductor manufacturing apparatus according to the present invention does not have a nichrome type heater, and instead is provided with a ceramic heater that heats the TM with far infrared rays.
この発明におけるホットプレートをなすセラ宝ツク製ヒ
ータは、従来通シの熱伝導の他に、遠赤外線の輻射の熱
を発生しウェハを加熱する。In addition to conventional heat conduction, the ceramic heater forming the hot plate in this invention generates far-infrared radiation heat to heat the wafer.
以下、この発明の一実施例を図について説明する。第１
図において、（５）はウェハ、（６）はプロキシミテイ
用ビン、（７）は赤外線の透過率の高い表面保ｌ膜、（
８１はセラミックヒータ−１（９）はヒーター下部の補
強材、ＣＩＯはセラミックヒータ−の電極である０
次に動作について説明する。ウェハ（５）はセラミック
ヒータ−（８）からの遠赤外線の輻射熱により加熱され
る。このため、ウェハ（５）の昇温特性が従来のプロキ
シミテイベークに比べ改善される。また、ウェハ面内の
温度均一性が向上する。しかも、遠赤外線を用いている
ため、レジストの深部が十分にベークされるためベーク
の均一性が向上する０なお、上記実施例ではセラミック
ヒータ−（８）をウェハ（５ンの下に置いた場合を示し
たが、セラミックヒータ−（８）をウェハ（５）の上に
追加してもよい。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (5) is the wafer, (6) is the proximity bottle, (7) is the surface retention film with high infrared transmittance, (
81 is a ceramic heater 1 (9) is a reinforcing material at the bottom of the heater, and CIO is an electrode of the ceramic heater.0 Next, the operation will be explained. The wafer (5) is heated by far-infrared radiant heat from the ceramic heater (8). Therefore, the temperature increase characteristics of the wafer (5) are improved compared to the conventional proximity bake. Furthermore, temperature uniformity within the wafer surface is improved. Moreover, since far infrared rays are used, the deep part of the resist is sufficiently baked, which improves the baking uniformity. In the above example, the ceramic heater (8) was placed under the wafer (5 mm). Although the case is shown, a ceramic heater (8) may be added on top of the wafer (5).
また、ウェハの下のヒーターは従来型のニクロムヒータ
ーで、ウェハの上に設けられるプレートをセラミックに
してもよい０
また、赤外線透過型表面保護膜（７）を介せずに直接平
面型のセフミックヒーター（８）としても同様の効果を
奏する０
〔発明の効果〕
以上のようにこの発明によれば、ホットプレートをセラ
ミック ヒータにしたので、ウェハ面内の温度の昇温特
性と均一性が向上し、またレジストのベーク均一性も向
上するという効果がある０In addition, the heater under the wafer is a conventional nichrome heater, and the plate provided above the wafer may be made of ceramic. [Effects of the Invention] As described above, according to the present invention, since the hot plate is a ceramic heater, the heating characteristics and uniformity of the temperature within the wafer surface are improved. It has the effect of improving the bake uniformity of the resist as well as improving the bake uniformity of the resist.
第１図はこの発明の一実施例による半導体製造装置を示
す断面正面図、第２図は従来の半導体製造装置を示す断
面正面図である０
図において、（５）はウェハ、（６）はプロキシミテイ
用ピン、（７）は赤外線透過型表面保護膜、（８）はセ
ラミックヒータ−１（９）は下部補強材、ＧＯはセラミ
ックヒータ−の電極を示す０FIG. 1 is a cross-sectional front view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional front view showing a conventional semiconductor manufacturing apparatus. Proximity pin, (7) is infrared transmitting surface protective film, (8) is ceramic heater 1 (9) is lower reinforcing material, GO is electrode of ceramic heater 0
Claims (1)
トを塗布する工程で、ウェハの加熱を遠赤外線を発生す
るセラミックヒーターにより行うことを特徴とする半導
体製造装置。A semiconductor manufacturing apparatus characterized in that, in the process of manufacturing an LSI, the wafer is heated by a ceramic heater that generates far infrared rays in the process of coating the wafer with photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2292490A JPH03227008A (en) | 1990-01-31 | 1990-01-31 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2292490A JPH03227008A (en) | 1990-01-31 | 1990-01-31 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03227008A true JPH03227008A (en) | 1991-10-08 |
Family
ID=12096189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2292490A Pending JPH03227008A (en) | 1990-01-31 | 1990-01-31 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03227008A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275434A (en) * | 1992-03-24 | 1993-10-22 | Ngk Insulators Ltd | Ceramic heater for heating semiconductor and its manufacture |
| JP2004072095A (en) * | 1999-02-10 | 2004-03-04 | Ibiden Co Ltd | Hot plate unit |
-
1990
- 1990-01-31 JP JP2292490A patent/JPH03227008A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275434A (en) * | 1992-03-24 | 1993-10-22 | Ngk Insulators Ltd | Ceramic heater for heating semiconductor and its manufacture |
| JP2004072095A (en) * | 1999-02-10 | 2004-03-04 | Ibiden Co Ltd | Hot plate unit |
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