JPH031530A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPH031530A JPH031530A JP13519089A JP13519089A JPH031530A JP H031530 A JPH031530 A JP H031530A JP 13519089 A JP13519089 A JP 13519089A JP 13519089 A JP13519089 A JP 13519089A JP H031530 A JPH031530 A JP H031530A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- processed
- substance
- plasma
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000004380 ashing Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 5
- 239000007789 gas Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 235000011149 sulphuric acid Nutrition 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体や電子部品の製造に使用される高分子
有機膜灰化装置、特にドライエツチング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a polymeric organic film ashing device, particularly a dry etching device, used in the production of semiconductors and electronic components.
（従来の技術）
高分子有機膜の灰化方法としては、Ｈ２ＳＯ４／Ｈ２０
２によるウェット法と、ドライエツチング装置により発
生させた酸素ガス（０２）プラズマを使用するドライ法
とがある。(Prior art) As a method of ashing a polymeric organic film, H2SO4/H20
There are two methods: a wet method according to No. 2, and a dry method using oxygen gas (02) plasma generated by a dry etching device.
前者はＨ２ＳＯ４を使用しているためＡＩのような金属
膜には適用できないという欠点があり、専ら後者の方法
が用いられている。Since the former method uses H2SO4, it has the disadvantage that it cannot be applied to metal films such as AI, so the latter method is exclusively used.
第２図は、高分子有機膜の灰化に際して、現在数も多く
使用されているバレル型のドライエツチング装置を例示
している。FIG. 2 shows an example of a barrel-type dry etching apparatus, which is currently widely used in the ashing of polymeric organic films.
同図の装置において、真空容器からなる反応室１内の載
置台２上に、被処理物３を載置し、ガス導入管４より反
応室１内に酸素ガスを導入する。In the apparatus shown in the figure, a workpiece 3 is placed on a mounting table 2 in a reaction chamber 1 made of a vacuum container, and oxygen gas is introduced into the reaction chamber 1 through a gas introduction pipe 4.
反応室１の上下に配置した電極５．６間に、高周波電源
７より高周波電圧を印加し、酸素ガスを励起させて０２
プラズマを発生させる。A high frequency voltage is applied from a high frequency power source 7 between the electrodes 5 and 6 placed above and below the reaction chamber 1 to excite the oxygen gas.
Generate plasma.
この０２プラズマは、被処理物３上の高分子有機膜の主
成分である炭素と反応して炭酸ガスまたは−酸化炭素と
なり、高分子有機膜の剥離が行われる。このようにして
発生したガスはガス排気管８を通して排出される。This 02 plasma reacts with carbon, which is the main component of the organic polymer film on the object 3 to be treated, to form carbon dioxide gas or -carbon oxide, and the organic polymer film is peeled off. The gas thus generated is exhausted through the gas exhaust pipe 8.
（発明が解決しようとする課題）
上述した従来のバレル型ドライエツチング装置において
は、処理中にプラズマ、反応熱あるいはヒーターからの
熱によって被処理物の温度か上昇し、高分子有機膜が変
質したり、硬化したりする危険性があり、また高分子有
機膜を完全に除去しきれずに、第３図に示すように被処
理物３の表面に残さ１０として残ることがある。(Problem to be Solved by the Invention) In the conventional barrel-type dry etching apparatus described above, the temperature of the object to be processed rises during processing due to plasma, reaction heat, or heat from the heater, causing deterioration of the polymeric organic film. There is a risk that the organic polymer film may be hardened or hardened, and the polymeric organic film may not be completely removed and may remain as a residue 10 on the surface of the object 3 as shown in FIG.
なお、第３図において、１１はＳｉ基板、１２は５ｉ０
２膜、１３はＡｌ−８ｉ−Ｃｕのスパッタ層を示す。In addition, in FIG. 3, 11 is a Si substrate, 12 is a 5i0
2 film, 13 shows a sputtered layer of Al-8i-Cu.
また、被処理物３が直接プラズマに曝されるため、被処
理物３中に汚染物が打込まれ、損傷を引起こしやすくな
るという欠点がある。Furthermore, since the workpiece 3 is directly exposed to plasma, there is a drawback that contaminants are implanted into the workpiece 3, which tends to cause damage.
（発明の目的）
本発明は従来技術における上述のごとき欠点を解決すべ
くなされたもので、被処理物が直接プラズマに曝されな
いようにするとともに、処理中の被処理物の温度を１２
０℃以下に制御することにより、損傷が少なく、しかも
高分子有機膜の残さが生じないドライエツチング装置を
提供することを目的とするものである。(Object of the Invention) The present invention has been made to solve the above-mentioned drawbacks in the prior art, and it prevents the workpiece from being directly exposed to plasma and reduces the temperature of the workpiece during processing by 12
The object of the present invention is to provide a dry etching apparatus which causes less damage and does not leave any residue of a polymeric organic film by controlling the temperature to 0° C. or lower.
（課題を解決するための手段）
本発明のドライエツチング装置は、上記目的を達成する
ため、プラズマ発生装置を反応室と分離して設けた高分
子有機膜灰化装置において、高分子有機膜灰化時の被処
理物を冷却する被処理物冷却装置と、前記被処理物の温
度を測定する温度測定手段と、この温度測定手段からの
出力に基づいて前記被処理物の高分子有機膜灰化時の温
度を１２０℃以下に制御する温度制御装置とを具備する
ことを特徴とするものである。(Means for Solving the Problems) In order to achieve the above object, the dry etching apparatus of the present invention is a polymer organic film ashing apparatus in which a plasma generator is separated from a reaction chamber. a to-be-treated object cooling device for cooling the to-be-treated object during oxidation; a temperature measuring means for measuring the temperature of the to-be-processed object; The present invention is characterized by comprising a temperature control device for controlling the temperature at 120° C. or lower during the oxidation.
（作 用）
上述のように本発明のドライエツチング装置においては
、プラズマ発生装置を反応室と分離して設けるとともに
、高分子有機膜灰化時における被処理物の温度を１２０
℃以下に制御するようにしたので、被処理物を低損傷で
、しかも高分子有機膜を完全に灰化することができる。(Function) As described above, in the dry etching apparatus of the present invention, the plasma generation device is provided separately from the reaction chamber, and the temperature of the object to be treated during ashing of the polymeric organic film is kept at 120°C.
Since the temperature is controlled to be below .degree. C., it is possible to completely incinerate the polymeric organic film with little damage to the object to be treated.
（実施例）
以下、図面を参照して本発明の詳細な説明する。なお、
第２図におけると同一部分には同一の符号を付しである
。(Example) Hereinafter, the present invention will be described in detail with reference to the drawings. In addition,
The same parts as in FIG. 2 are given the same reference numerals.
第１図は本発明のドライエツチング装置の一例を示すも
ので、反応室１内には被処理物３を搭載する載置台２が
設けられている。裁置台２は静電吸着装置２０を備えて
おり、高電圧発生装置２１から高電圧を印加すると、被
処理物３は静電吸着装置２０に静電的に吸着され、密着
する。FIG. 1 shows an example of a dry etching apparatus according to the present invention, in which a stage 2 on which a workpiece 3 to be processed is mounted is provided in a reaction chamber 1. As shown in FIG. The processing table 2 is equipped with an electrostatic chuck device 20, and when a high voltage is applied from a high voltage generator 21, the workpiece 3 is electrostatically attracted to the electrostatic chuck device 20 and brought into close contact with the workpiece 3.
載置台２には冷凍機等の被処理物冷却装置２２が連結さ
れており、載置台２上の静電吸着装置２０に密着してい
る被処理物３を冷却する。また、載置台２には被処理物
３の温度を測定する熱雷対などの温度測定手段（図示せ
ず）が取付けられている。この温度測定手段から引出さ
れたリード線２３は温度制御装置２４に接続されている
。A workpiece cooling device 22 such as a refrigerator is connected to the mounting table 2 and cools the workpiece 3 that is in close contact with the electrostatic adsorption device 20 on the mounting table 2 . Furthermore, a temperature measuring means (not shown) such as a thermocouple for measuring the temperature of the object 3 to be processed is attached to the mounting table 2 . A lead wire 23 drawn out from this temperature measuring means is connected to a temperature control device 24.
温度制御装置２４は前記温度測定手段によって計測され
た温度信号に基づいて、被処理物冷却装置２２を制御し
、被処理物３の温度が、処理時間中、常に１２０℃以下
となるようにフィードバック制御する。The temperature control device 24 controls the processing object cooling device 22 based on the temperature signal measured by the temperature measuring means, and provides feedback so that the temperature of the processing object 3 is always below 120° C. during the processing time. Control.
反応室１の上方部には、ガス導入管４が接続されており
、このガス導入管の途中にはプラズマ発生装置２５が介
挿されている。A gas introduction pipe 4 is connected to the upper part of the reaction chamber 1, and a plasma generator 25 is inserted in the middle of this gas introduction pipe.
プラズマ発生装置２５は、石英製の放電管２６と、その
外側に設置された導波管２７とから構成されており、導
波管２７を介してマイクロ波を印加することにより、放
電管２６内を流れる反応性ガスは活性化され、ｏ２プラ
ズマとなって反応室１に流込み、被処理物３をケミカル
エツチングする。The plasma generator 25 is composed of a discharge tube 26 made of quartz and a waveguide 27 installed outside the discharge tube 26. By applying microwaves through the waveguide 27, the inside of the discharge tube 26 is The reactive gas flowing through is activated, becomes O2 plasma, flows into the reaction chamber 1, and chemically etches the object to be processed 3.
反応室１の底壁にはエツチング後のガスを排出するガス
排気管８が接続されており、このガス排気管には真空ポ
ンプ（図示せず）が接続されている。A gas exhaust pipe 8 for discharging gas after etching is connected to the bottom wall of the reaction chamber 1, and a vacuum pump (not shown) is connected to this gas exhaust pipe.
第４図は被処理物３を例示するもので、Ｓｉ基板１１上
には、熱酸化法により、５ｉ０２膜１２が形成されてお
り、その上にはＡ Ｉ −Ｓ ｉ −Ｃｕのスパッタ層
１３が設けられている。このスパッタ層１３は、その上
にマスク形成されたポジ型レジスト（高分子有機膜）１
４によりマスキングされ、所定のパターンにエツチング
されている。FIG. 4 shows an example of the object to be processed 3, in which a 5i02 film 12 is formed on a Si substrate 11 by a thermal oxidation method, and a sputtered layer 13 of A I -S i -Cu is formed thereon. is provided. This sputtered layer 13 is formed by a positive resist (polymer organic film) 1 with a mask formed thereon.
4 and etched into a predetermined pattern.
このような構成の被処理物３を第１図に示した本発明の
ドライエツチング装置の反応室１内の静電吸着装置２０
に密着させ、プラズマ発生装置２６から反応性ガスを反
応室１内に送り込み、高分子有機膜を灰化させた。この
場合、反応性ガスとしてＣＦ４ ＋０２の混合ガスを用
い、温度制御装置２４により被処理物冷却装置２２をフ
ィードバック制御して被処理物３の温度を１２０℃以下
に保持した。その結果、得られた被処理物３は第５図に
示すように、ポジ型レジスト１４は完全に灰化除去され
、またレジスト１４の変質、硬化も発生していなかった
。An electrostatic adsorption device 20 in the reaction chamber 1 of a dry etching apparatus according to the present invention shown in FIG.
A reactive gas was sent into the reaction chamber 1 from the plasma generator 26 to incinerate the polymeric organic film. In this case, a mixed gas of CF4+02 was used as the reactive gas, and the temperature control device 24 feedback-controlled the object cooling device 22 to maintain the temperature of the object 3 at 120° C. or lower. As a result, as shown in FIG. 5, in the obtained object 3, the positive resist 14 was completely removed by ashing, and neither deterioration nor hardening of the resist 14 occurred.
次に、本発明の他の適用例として、Ｓｉ基板上に熱酸化
法により５ｉ０２膜を形成し、その上に気相成長法によ
り多結晶Ｓｔ層を堆積させ、ポジ型レジストによりマス
キングした後、エツチングを行った。Next, as another application example of the present invention, a 5i02 film is formed on a Si substrate by a thermal oxidation method, a polycrystalline St layer is deposited thereon by a vapor phase epitaxy method, and after masking with a positive resist, I did etching.
第６図はその性能を耐圧特性で示すもので、曲線■は本
発明装置による場合を、曲線■は第２図のバレル型装置
による場合を、また曲線■はＨ２ＳＯ４／Ｈ２０２を用
いたウェットエツチングによる場合を示している。Figure 6 shows its performance in terms of pressure resistance characteristics, where curve (■) is for the case using the apparatus of the present invention, curve (2) is for the case using the barrel type apparatus in Figure 2, and curve (■) is for wet etching using H2SO4/H202. The case is shown below.
この図から明らかなように、曲線■の本発明装置による
場合は、低電界域において、曲線■て示す従来のバレル
型装置による場合よりも素箔不良率が大幅に低下してい
る。また、曲線■と曲線■とを対比すれば明らかなよう
に、本発明による場合は、ウェットエツチングによる場
合とほぼ同様に、低い不良率に収まっている。As is clear from this figure, in the case of the device of the present invention shown by curve (2), the bare foil defect rate is significantly lower in the low electric field region than in the case of the conventional barrel-type device shown by curve (2). Furthermore, as is clear from a comparison of curves (2) and (2), the defective rate in the case of the present invention is almost as low as in the case of wet etching.
なお、上述の例では、温度測定手段として熱電対を使用
した例につき述べたが、本発明はこれに限定されるもの
ではなく、例えば赤外線温度計や蛍光温度計を用いても
よい。In addition, although the above-mentioned example described the example which used a thermocouple as a temperature measurement means, this invention is not limited to this, For example, an infrared thermometer or a fluorescence thermometer may be used.
以上説明したように、本発明によれば、損傷が少なく、
しかも高分子有機膜の残さが生じないドライエツチング
装置を得ることができる。As explained above, according to the present invention, there is less damage and
Moreover, it is possible to obtain a dry etching apparatus that does not leave any residue of the polymeric organic film.
被処理物冷却装置、２３・・・リード線、２４・・・温
度制御装置、２５・・・プラズマ発生装置、２６・・・
放電管、２７・・・導波管。Processed object cooling device, 23... Lead wire, 24... Temperature control device, 25... Plasma generation device, 26...
Discharge tube, 27... waveguide.
第１図は本発明のドライエツチング装置を例示する概略
図、第２図は従来のドライエツチング装置を例示する概
略図、第３図は従来方法によりエツチング処理された被
処理物を例示する断面図、第４図は本発明方法が適用さ
れる被処理物を例示する断面図、第５図は本発明装置に
よりエツチング処理された被処理物を例示する断面図、
第６図は本発明および従来装置の効果を説明するグラフ
である。FIG. 1 is a schematic diagram illustrating a dry etching apparatus of the present invention, FIG. 2 is a schematic diagram illustrating a conventional dry etching apparatus, and FIG. 3 is a sectional view illustrating a workpiece etched by a conventional method. , FIG. 4 is a cross-sectional view illustrating a workpiece to which the method of the present invention is applied, and FIG. 5 is a cross-sectional view illustrating a workpiece etched by the apparatus of the present invention.
FIG. 6 is a graph explaining the effects of the present invention and the conventional device.
Claims (1)
膜灰化装置において、高分子有機膜灰化時の被処理物を
冷却する被処理物冷却装置と、前記被処理物の温度を測
定する温度測定手段と、この温度測定手段からの出力に
基づいて前記被処理物の高分子有機膜灰化時の温度を１
２０℃以下に制御する温度制御装置とを具備することを
特徴とするドライエッチング装置。In a polymer organic film ashing device in which a plasma generator is installed separately from a reaction chamber, a processing object cooling device is used to cool the processing object during polymer organic membrane ashing, and the temperature of the processing object is measured. and temperature measuring means to set the temperature at the time of incineration of the polymeric organic film of the object to be treated to 1 based on the output from the temperature measuring means.
A dry etching apparatus comprising: a temperature control device for controlling the temperature to 20°C or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13519089A JPH031530A (en) | 1989-05-29 | 1989-05-29 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13519089A JPH031530A (en) | 1989-05-29 | 1989-05-29 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH031530A true JPH031530A (en) | 1991-01-08 |
Family
ID=15145945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13519089A Pending JPH031530A (en) | 1989-05-29 | 1989-05-29 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH031530A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5334251A (en) * | 1990-04-09 | 1994-08-02 | Anelva Corporation | Method of and apparatus for controlling temperature in the processing of a substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208636A (en) * | 1986-02-14 | 1987-09-12 | Fujitsu Ltd | Resist stripping method |
| JPS62281423A (en) * | 1986-05-30 | 1987-12-07 | Hitachi Ltd | Method and device for dry etching |
| JPS6459819A (en) * | 1987-08-31 | 1989-03-07 | Tokuda Seisakusho | Dry etching |
-
1989
- 1989-05-29 JP JP13519089A patent/JPH031530A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208636A (en) * | 1986-02-14 | 1987-09-12 | Fujitsu Ltd | Resist stripping method |
| JPS62281423A (en) * | 1986-05-30 | 1987-12-07 | Hitachi Ltd | Method and device for dry etching |
| JPS6459819A (en) * | 1987-08-31 | 1989-03-07 | Tokuda Seisakusho | Dry etching |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5334251A (en) * | 1990-04-09 | 1994-08-02 | Anelva Corporation | Method of and apparatus for controlling temperature in the processing of a substrate |
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