JPH03154771A - Polishing device - Google Patents
Polishing deviceInfo
- Publication number
- JPH03154771A JPH03154771A JP1293561A JP29356189A JPH03154771A JP H03154771 A JPH03154771 A JP H03154771A JP 1293561 A JP1293561 A JP 1293561A JP 29356189 A JP29356189 A JP 29356189A JP H03154771 A JPH03154771 A JP H03154771A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- liquid
- workpiece
- polishing pad
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 102
- 239000007788 liquid Substances 0.000 claims abstract description 50
- 230000003746 surface roughness Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体材料や光学材料の高精度研磨を行う研
磨装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a polishing apparatus that performs high-precision polishing of semiconductor materials and optical materials.
従来、シリコン単結晶や化合物半導体の基板を高精度、
無歪に加工する研磨装置としては、図面には示さないが
、研磨バットを接着した研磨皿と、−この研磨皿上に研
磨液を供給させる導液路とを備え、被加工物の加工面に
研磨パッドを対向接触させて、前記研磨パッドと前記被
加工物の相対運動により前記被加工物の表面を研磨して
いる。Conventionally, silicon single crystal and compound semiconductor substrates have been processed with high precision.
Although it is not shown in the drawing, the polishing device that performs distortion-free processing is equipped with a polishing plate to which a polishing bat is bonded, and a liquid guide path for supplying polishing liquid onto the polishing plate. A polishing pad is brought into opposing contact with the polishing pad, and the surface of the workpiece is polished by relative movement between the polishing pad and the workpiece.
また、この研磨装置の研磨液供給法としては、研磨パッ
ド面の被加工物直前や、回転中心付近に上から研磨液を
注入する方法が用いられている。Further, as a method of supplying polishing liquid to this polishing apparatus, a method is used in which the polishing liquid is injected from above onto the surface of the polishing pad immediately before the workpiece or near the center of rotation.
上述したような従来の研磨装置では、被加工物に対する
研磨液の供給が被加工物の外周から行わ・れるため、被
加工物の外周部分と中心近傍における研磨液供給状態に
差が生じ、特に被加工物が大きくなると中心近傍では研
磨液が供給不足になり、研磨面が曇ったり、表面粗さが
大きくなり十分な表面状態が得られない場合があった。In the conventional polishing apparatus described above, the polishing liquid is supplied to the workpiece from the outer periphery of the workpiece, so there is a difference in the polishing liquid supply state between the outer periphery and the vicinity of the center of the workpiece. When the workpiece becomes large, the supply of polishing liquid becomes insufficient near the center, and the polishing surface becomes cloudy or the surface roughness becomes large, and a sufficient surface condition may not be obtained.
本発明の目的は、従来の上記問題点を解決して被加工物
表面全体に均一な研磨液供給が行える研磨装置を提供す
るものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a polishing apparatus capable of uniformly supplying polishing liquid to the entire surface of a workpiece by solving the above-mentioned conventional problems.
本発明の研磨装置は、回転可能な研磨面の上面に接着さ
れた研磨パッド上に、被加工物を該研磨パッドに対向し
て配置させ、研磨液を供給しながら研磨パッドと被加工
物の相対運動によって被加工物を加工する研磨装置に於
いて、研磨面に垂直方向に通液性のある構造の前記研磨
パッドと、内部から上面に通じる導液路を有する前記研
磨面と、前記導液路に研磨液を供給する機能とを有して
いる。The polishing apparatus of the present invention places a workpiece on a polishing pad bonded to the upper surface of a rotatable polishing surface, facing the polishing pad, and while supplying polishing liquid, the workpiece is placed between the polishing pad and the workpiece. In a polishing apparatus that processes a workpiece by relative motion, the polishing pad has a structure that allows liquid to pass in a direction perpendicular to the polishing surface, the polishing surface has a liquid guide path leading from the inside to the upper surface, and the polishing surface has a liquid guide path that leads from the inside to the upper surface. It also has the function of supplying polishing liquid to the liquid path.
本発明は、研磨液の供給を研磨パッドの下から透過させ
て、被加工物の加工面に直接作用させることにより、被
加工物表面の均一に供給し、良好な研磨面を得たことで
ある。The present invention allows the supply of polishing liquid to pass through from below the polishing pad and directly act on the machined surface of the workpiece, thereby uniformly supplying the polishing liquid to the surface of the workpiece and obtaining a good polished surface. be.
次に、本発明の実施例について図面を参照して詳細に説
明する。Next, embodiments of the present invention will be described in detail with reference to the drawings.
第1図は本発明の研磨装置の一実施例を示す断面図であ
る。この研磨装置は、同図に示すように薄板状の被加工
物1を接着等の方法によりその下面に保持する円板状の
ホルダ2と、このホルダ2の上面中心に接続されるとと
もにアーム4の穴に挿入保持され、かつ回転する円板状
の研磨パッド5の表面に追従及び従動回転が可能な丸棒
状の支持棒3と、アーム4の他端を固定する本体6と、
円板状の研磨面7の上面に接着される研磨パッド5と、
研磨面7と一体に構成される軸8と、研磨面7の内部に
あるとともに軸8から上面に設け?=。FIG. 1 is a sectional view showing an embodiment of the polishing apparatus of the present invention. As shown in the figure, this polishing device includes a disc-shaped holder 2 that holds a thin plate-shaped workpiece 1 on its lower surface by a method such as gluing, and an arm 4 that is connected to the center of the upper surface of this holder 2. a round rod-shaped support rod 3 that is inserted into and held in the hole and can follow and follow the surface of a rotating disk-shaped polishing pad 5; and a main body 6 that fixes the other end of the arm 4;
a polishing pad 5 adhered to the upper surface of a disc-shaped polishing surface 7;
A shaft 8 integrated with the polishing surface 7, and a shaft 8 located inside the polishing surface 7 and provided above the shaft 8? =.
れな複数の穴に通じる導液路9と、この導液路9と軸8
のT形式10とに通じ、がっ軸8の外周部には軸を回転
可能に保持して回転する軸8のT形式10に外部から研
磨液を供給する導入環11、と、軸8の外周部との間に
は液が漏れない様にシール12と、軸8の端に回転軸が
接続されているとともに軸8を介して研磨面7と研磨パ
ッド5を回転させるモータ13と、研磨液をポンプ15
、管16を通して導入環11に供給し、T形式10.導
液路9を通って研磨パッド5の裏面に供給する研磨液タ
ンク14とで構成されている。A liquid guide path 9 that leads to a plurality of holes, and a shaft 8 that connects this liquid guide path 9 with the shaft 8.
An introduction ring 11 is connected to the outer periphery of the shaft 8 to rotatably hold the shaft and supply polishing liquid from the outside to the rotating T-type 10 of the shaft 8. A seal 12 is provided to prevent liquid from leaking between the outer circumferential part, a motor 13 has a rotating shaft connected to the end of the shaft 8, and rotates the polishing surface 7 and the polishing pad 5 via the shaft 8. Pump the liquid15
, into the inlet ring 11 through the tube 16 and into the T-type 10. The polishing liquid tank 14 is configured to supply a polishing liquid to the back surface of the polishing pad 5 through a liquid guide path 9.
第2図に本発明の研磨装置の一実施例の被加工物近傍の
拡大図を示す。また、この研磨装置の研磨パッドは、同
図に示すように微細樹脂粒を加熱焼結することにより成
形され、間に空間を有する構造で、パッドの裏面がら表
面に研磨液が通過することができる。次に、本実施例の
研磨装置を使用して、被加工物を研磨する場合について
述べる。まず、モータ13を回転させ、研磨面7及び研
磨パッド5を回転させた状態で、ポンプ15を作動させ
て研磨液を管16.導入環11.T形穴10、導液路9
.研磨パッド5を介して被加工物の加工面に下から供給
する。このことにより、研磨液は被加工物表面に均一に
供給されるため、研磨面か曇ったり表面粗さが大きくな
ることが無く、良好な加工面を得ることができる。FIG. 2 shows an enlarged view of the vicinity of the workpiece of an embodiment of the polishing apparatus of the present invention. In addition, as shown in the figure, the polishing pad of this polishing device is formed by heating and sintering fine resin particles, and has a structure with a space between them, so that the polishing liquid can pass from the back side of the pad to the front surface. can. Next, a case will be described in which a workpiece is polished using the polishing apparatus of this embodiment. First, while the motor 13 is rotated to rotate the polishing surface 7 and polishing pad 5, the pump 15 is operated to pump the polishing liquid into the tube 16. Introduction ring 11. T-shaped hole 10, liquid guide path 9
.. It is supplied from below to the processing surface of the workpiece through the polishing pad 5. As a result, the polishing liquid is uniformly supplied to the surface of the workpiece, so that the polished surface does not become cloudy or the surface roughness becomes large, and a good machined surface can be obtained.
ここで、上記の構成の研磨装置と、例えば、被加工物と
して直径150mmのシリコン単結晶ウェハ、研磨パッ
ドとして焼結ポリエチレンート(平均粒径:100μm
)、研磨液として市販のコロイダルシリカ10%水溶液
(日照化学製、商品名ニスノーテックス30)を使用し
て研磨を行ったところ、ウェハの端近値から中心まで表
面粗さ5nm以下の鏡面を得ることができた。同条件で
研磨液供給方法のみを従来方法で行うと、ウェハの端近
値では同様の鏡面が得られるのに対し、中心部分では研
磨液の供給が不足して曇り・が発生し、表面粗さは20
nm以上に悪化する。Here, with a polishing apparatus having the above configuration, for example, a silicon single crystal wafer with a diameter of 150 mm is used as a workpiece, and a sintered polyethylene oxide (average particle size: 100 μm) is used as a polishing pad.
), when polishing was performed using a commercially available 10% colloidal silica aqueous solution (manufactured by Nissero Kagaku, trade name Nisnortex 30) as a polishing liquid, a mirror surface with a surface roughness of 5 nm or less from the edge to the center of the wafer was obtained. I was able to get it. If only the conventional polishing liquid supply method is used under the same conditions, a similar mirror surface will be obtained at the edges of the wafer, but at the center, the supply of polishing liquid will be insufficient and clouding will occur, resulting in surface roughness. Saha 20
It gets worse than nm.
なお、本実施例では、研磨パッドの構造として樹脂の焼
結構造の場合を述べたが、本実施例を実現するためには
研磨パッドの断面方向に液体が通過することが必要で、
通常の発泡ポリウレタン研磨パッドや、ポリエステル不
織布研磨パッドに微小穴や溝を形成した場合でも同様の
効果が得られる。又、導液路の構造として研磨パッドと
接する面に設けた穴から研磨液を供給する構造を述べた
が、これは溝や多孔質材料の穴から供給しても同様な効
果が得られる。In addition, in this example, the case where the structure of the polishing pad is a sintered resin structure has been described, but in order to realize this example, it is necessary for liquid to pass in the cross-sectional direction of the polishing pad.
A similar effect can be obtained by forming microholes or grooves in a regular foamed polyurethane polishing pad or a polyester nonwoven polishing pad. Furthermore, although the structure of the liquid guiding path has been described in which the polishing liquid is supplied from a hole provided in the surface in contact with the polishing pad, the same effect can be obtained even if the polishing liquid is supplied from a groove or a hole in a porous material.
以上説明したように本発明は、研磨液が透過する研磨パ
ッドを設け、さらに、この研磨パッドの下面から研磨面
に研磨液を通過させる手段を設けることによって、被加
工物に均一な研磨液供給が可能となるため、被加工物が
大きくなっても曇りや表面粗さが大きくなること無く、
良好な研磨面が加工出来る研磨装置が得られるという効
果がある。As explained above, the present invention provides a polishing pad through which a polishing liquid passes, and further provides means for passing the polishing liquid from the bottom surface of the polishing pad to the polishing surface, thereby uniformly supplying the polishing liquid to the workpiece. Even if the workpiece becomes larger, cloudiness or surface roughness will not increase.
This has the effect of providing a polishing device that can process a good polished surface.
第1図は本発明の研磨装置の一実施例を示す断面図、第
2図は本発明の研磨装置の一実施例の被加工物近傍の拡
大図である。
1・・・被加工物、2・・・ホルダ、3・・・支持棒、
4・・・アーム、5・・・研磨パッド、6・・・本体、
7・・・研摩皿、8・・・軸、9・・・導液路、10・
・・T形式、11・・・導入環、12・・・シール、1
3・・・モータ、14・・・研磨液タンク、15・・・
ポンプ、16・・・管。FIG. 1 is a sectional view showing an embodiment of the polishing apparatus of the present invention, and FIG. 2 is an enlarged view of the vicinity of the workpiece of the embodiment of the polishing apparatus of the present invention. 1... Workpiece, 2... Holder, 3... Support rod,
4... Arm, 5... Polishing pad, 6... Main body,
7... Polishing plate, 8... Shaft, 9... Liquid guide path, 10...
...T type, 11...Introduction ring, 12...Seal, 1
3...Motor, 14...Polishing liquid tank, 15...
Pump, 16...tube.
Claims (1)
、被加工物を該研磨パッドに対向して配置させ、研磨液
を供給しながら研磨パッドと被加工物の相対運動によっ
て被加工物を加工する研磨装置に於いて、研磨面に垂直
方向に通液性のある構造の前記研磨パッドと、内部から
上面に通じる導液路を有する前記研磨皿と、前記導液路
に研磨液を供給する機能とを有ることを特徴とする研磨
装置。A workpiece is placed facing the polishing pad bonded to the top surface of a rotatable polishing plate, and the workpiece is moved by relative movement between the polishing pad and the workpiece while supplying polishing liquid. In a polishing apparatus for processing, the polishing pad has a structure that allows liquid to pass in a direction perpendicular to the polishing surface, the polishing dish has a liquid guide path leading from the inside to the upper surface, and a polishing liquid is supplied to the liquid guide path. A polishing device characterized by having the function of
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1293561A JPH03154771A (en) | 1989-11-10 | 1989-11-10 | Polishing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1293561A JPH03154771A (en) | 1989-11-10 | 1989-11-10 | Polishing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03154771A true JPH03154771A (en) | 1991-07-02 |
Family
ID=17796343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1293561A Pending JPH03154771A (en) | 1989-11-10 | 1989-11-10 | Polishing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03154771A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007501717A (en) * | 2003-08-08 | 2007-02-01 | インテグリス・インコーポレーテッド | Methods and materials for making monolithic porous pads cast on a rotatable base |
CN104440509A (en) * | 2014-11-29 | 2015-03-25 | 河南省广天铸件有限公司 | Grinding miller for pot |
US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
JP2020078850A (en) * | 2018-11-14 | 2020-05-28 | 国立大学法人九州工業大学 | Polishing pad and polishing device having the same |
-
1989
- 1989-11-10 JP JP1293561A patent/JPH03154771A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007501717A (en) * | 2003-08-08 | 2007-02-01 | インテグリス・インコーポレーテッド | Methods and materials for making monolithic porous pads cast on a rotatable base |
US7984526B2 (en) | 2003-08-08 | 2011-07-26 | Entegris, Inc. | Methods and materials for making a monolithic porous pad cast onto a rotatable base |
US8533895B2 (en) | 2003-08-08 | 2013-09-17 | Entegris, Inc. | Methods and materials for making a monolithic porous pad cast onto a rotatable base |
US10040226B2 (en) | 2003-08-08 | 2018-08-07 | Entegris, Inc. | Methods and materials for making a monolithic porous pad cast onto a rotatable base |
CN104440509A (en) * | 2014-11-29 | 2015-03-25 | 河南省广天铸件有限公司 | Grinding miller for pot |
US9902038B2 (en) | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
JP2020078850A (en) * | 2018-11-14 | 2020-05-28 | 国立大学法人九州工業大学 | Polishing pad and polishing device having the same |
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