JPH027613A - Multiplex mode resonator type surface acoustic wave filter and its band pass characteristic adjusting method - Google Patents
Multiplex mode resonator type surface acoustic wave filter and its band pass characteristic adjusting methodInfo
- Publication number
- JPH027613A JPH027613A JP10690288A JP10690288A JPH027613A JP H027613 A JPH027613 A JP H027613A JP 10690288 A JP10690288 A JP 10690288A JP 10690288 A JP10690288 A JP 10690288A JP H027613 A JPH027613 A JP H027613A
- Authority
- JP
- Japan
- Prior art keywords
- conductor pattern
- acoustic wave
- surface acoustic
- wave filter
- type surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 7
- 239000004020 conductor Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 14
- 239000011787 zinc oxide Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、複数の共振器を弾性的に結合させた多重モー
ド共振器型表面弾性波フィルタと、そのフィルタの帯域
通過特性を調整する方法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention provides a multimode resonator type surface acoustic wave filter in which a plurality of resonators are elastically coupled, and a method for adjusting the bandpass characteristics of the filter. It is related to.
二個の表面弾性波(SAW)共振器を近接して配置し、
それらを弾性的に結合させると、二つの振動モードを生
じる。すなわち、対称モードと反対称モートの二つの振
動モードで、対称モードの共振周波数と反対称モードの
反共振周波数を一致させて、二重モードSAWフィルタ
を構成する。Two surface acoustic wave (SAW) resonators are placed close to each other,
When they are elastically coupled, two modes of vibration occur. That is, in two vibration modes, a symmetric mode and an anti-symmetric mode, the resonant frequency of the symmetric mode and the anti-resonant frequency of the anti-symmetric mode are made to match, thereby forming a dual mode SAW filter.
第4図はその二重モードSAWフィルタの一例の平面図
で、水晶等の基板40の表面にインターデジタル電極(
IDT)41とそれを挟む反射器42によって共振器が
構成され、SAWの伝播方向と直角の方向にもう一つの
共振器が配置されたものである。FIG. 4 is a plan view of an example of the dual mode SAW filter, in which interdigital electrodes (
A resonator is configured by the IDT 41 and the reflector 42 sandwiching it, and another resonator is arranged in a direction perpendicular to the SAW propagation direction.
共振器を三個以上配置して、多重モードフィルタを構成
することもできる。このような多重モード共振器型表面
弾性波フィルタは、電子)11信学会超音波研究会資料
US−77−33(1977年)等に示されている。ま
た、インターデジタル電極を各共振器に二個配置した2
ボートタイプなどもある。A multimode filter can also be configured by arranging three or more resonators. Such a multi-mode resonator type surface acoustic wave filter is shown in Electronics) 11 IEICE Ultrasound Study Group Material US-77-33 (1977) and the like. In addition, two interdigital electrodes were placed in each resonator.
There are also boat types.
上記のような多重モード共振器型表面弾性波フィルタに
おいて、一方のモー1′と他方のモードの周波数スペー
スを増して、広帯域化しようとすると、第5図の実線5
3で示したように波形のストップバンドが生じる。In the multi-mode resonator type surface acoustic wave filter as described above, if you try to widen the band by increasing the frequency space of one mode 1' and the other mode, the solid line 5 in Fig. 5
A waveform stop band is generated as shown in 3.
また、Qが1万程度と非常に高いので、第二の雰点付近
での特性インピーダンスが低くなり、通過帯域の限界付
近に、第6図の実線63で示したように、肩が生じる。Furthermore, since the Q is very high, about 10,000, the characteristic impedance near the second atmosphere point is low, and a shoulder appears near the limit of the passband, as shown by the solid line 63 in FIG.
本発明は、このような問題を解決して、通過帯域特性の
良好な多重モード共振器型表面弾性波フィルタを得よう
とするものである。The present invention aims to solve these problems and obtain a multimode resonator type surface acoustic wave filter with good passband characteristics.
また、最小のスペースで効率よく特性を改善しようとす
るものである。Furthermore, it is an attempt to efficiently improve the characteristics using the minimum space.
さらに、特性の調整も同時に可能とするものである。Furthermore, the characteristics can be adjusted at the same time.
本発明は、共振器間のIDTの接続導体パターンと接地
導体との間に容量を形成することによって、上記の課題
を解決するものである。The present invention solves the above problem by forming a capacitance between a connecting conductor pattern of an IDT between resonators and a ground conductor.
すなわち、圧電性基板表面にインターデジタル電極とそ
れを挟む反射器とから成る共振器を複数個配置し、その
弾性的結合を利用する多重モード共振器型フィルタにお
いて、該インターデジタル電極を接続する導体パターン
から伸びる第一の導体バクーンと接地された第二の導体
パターンが対向するように配置され、該第一および第二
の導体パターン間の基板表面に誘電体膜を具えたことに
特@、を有するものである。That is, in a multi-mode resonator filter that utilizes the elastic coupling of a plurality of resonators each consisting of interdigital electrodes and reflectors sandwiching them on the surface of a piezoelectric substrate, a conductor connecting the interdigital electrodes is used. Particularly, the first conductive conductor extending from the pattern and the grounded second conductive pattern are arranged to face each other, and a dielectric film is provided on the substrate surface between the first and second conductive patterns. It has the following.
また、言い換えれば、圧電性基板表面にインターデジタ
ル電極とそれを挟む反射器とから成る共振器を複数個配
置し、その弾性的結合を利用する多重モード共振器型フ
ィルタの帯域通過特性調整方法において、該・インター
デジタル電極を接続する導体パターンから伸びる第一の
導体パターンと接地された第二の導体パターンが対向す
るように配置し、該第一および第二の導体パターン間の
基板表面に誘電体膜を形成し、二つの導体パターン間に
容量を形成することに特徴を有するものである。In other words, in a method for adjusting the bandpass characteristics of a multimode resonator filter, which utilizes the elastic coupling of a plurality of resonators each consisting of an interdigital electrode and a reflector sandwiching the interdigital electrodes on the surface of a piezoelectric substrate. A first conductive pattern extending from the conductive pattern connecting the interdigital electrodes and a grounded second conductive pattern are arranged to face each other, and a dielectric is applied to the substrate surface between the first and second conductive patterns. The feature is that a body film is formed and a capacitance is formed between two conductor patterns.
容量を形成する1瓶パターンは種々あり、また誘電体の
量の調整によって、容量の調整も可能である。There are various bottle patterns that form a capacitance, and the capacitance can also be adjusted by adjusting the amount of dielectric material.
C実施例〕
以下、図面を参照して、本発明の実施例について説明す
る。C Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1図は、本発明の実施例を示す平面図である。FIG. 1 is a plan view showing an embodiment of the present invention.
水晶等の圧電性の基板10の表面にIDTIIとその両
側に配置された反射器12から成る共振器が、二個配置
されたものである。反射器の各電極は両端が接続された
構造となっている。Two resonators each consisting of an IDT II and reflectors 12 placed on both sides thereof are arranged on the surface of a piezoelectric substrate 10 made of crystal or the like. Each electrode of the reflector has a structure in which both ends are connected.
二個のIDTを接続する導体パターンから導体パターン
15が伸びており、これは反射器の接続導体パターンと
平行に対向して伸びるように形成ざれている。そして、
その導体パターン15と反射器の接続導体パターン間の
基板表面には、酸化亜鉛等の誘電体膜18が形成されて
いる。A conductor pattern 15 extends from the conductor pattern connecting the two IDTs, and is formed so as to extend parallel to and opposite to the connection conductor pattern of the reflector. and,
A dielectric film 18 such as zinc oxide is formed on the surface of the substrate between the conductor pattern 15 and the connection conductor pattern of the reflector.
上記の対抗する導体パターン間で容量が形成される。ま
た、その上に誘電体膜が形成されているので、容量の値
はより大きくなる。誘電体膜18を形成する前には0.
1〜1pFであった容量は、酸化亜鉛の誘電体膜18を
形成した後には1〜59Fとなっていた。A capacitance is formed between the opposing conductor patterns. Furthermore, since a dielectric film is formed thereon, the capacitance value becomes larger. 0.0 before forming the dielectric film 18.
The capacitance, which was 1 to 1 pF, became 1 to 59 F after forming the dielectric film 18 of zinc oxide.
第2図は、本発明の他の実施例を示す平面図である。I
DT21と反射器22は前記の例と同じであるが、ID
T間の導体パターンから伸びる電極25だけでなく、ア
ース電位に接続された反射器22に接続された導体パタ
ーン26をも形成したものである。導体パターン25と
導体パターン26は近接して平行に伸び、対向して配置
されている。これら二つの導体パターン上には酸化亜鉛
等の誘電体膜28が形成されている。FIG. 2 is a plan view showing another embodiment of the invention. I
DT21 and reflector 22 are the same as in the previous example, but with ID
In addition to electrodes 25 extending from the conductor pattern between the T's, a conductor pattern 26 is also formed which is connected to a reflector 22 connected to ground potential. The conductor pattern 25 and the conductor pattern 26 extend close to each other in parallel and are arranged to face each other. A dielectric film 28 made of zinc oxide or the like is formed on these two conductor patterns.
このように、二本の導体パターンを近接して配置すれば
、容量値を大きくすることができる。また、更に容量値
を大きくするときには、IDTに似た構造の電極を形成
し、複数の導体パターン同士が対向する構造とすればよ
い。In this way, by arranging two conductive patterns close to each other, the capacitance value can be increased. Furthermore, in order to further increase the capacitance value, an electrode having a structure similar to an IDT may be formed so that a plurality of conductor patterns face each other.
二本の導体パターンの上およびその間に誘電体膜が形成
された状態を第3図に示した。基板30上の平行な導体
パターン35.36の上に誘電体膜38が塗布されてい
る。通常電極の厚みはQ、3ミクlIシ程度であり、誘
電体膜の厚みは[りoン程度とすればよい。FIG. 3 shows a state in which a dielectric film is formed on and between two conductor patterns. A dielectric film 38 is applied over the parallel conductor patterns 35, 36 on the substrate 30. The thickness of the electrode is usually about 3 microns, and the thickness of the dielectric film is about 100 mils.
水晶基板上に酸化亜鉛膜を形成したとき、膜の形成前に
AI主電極1mm対向していたときの容量が0、05p
Fであったのに対して、酸化亜鉛膜を形成したときには
、1mmあたり0.14pFの容量が得られた。When a zinc oxide film is formed on a crystal substrate, the capacitance is 0.05p when the AI main electrode is 1mm opposite to the main electrode before the film is formed.
In contrast, when a zinc oxide film was formed, a capacitance of 0.14 pF per mm was obtained.
誘電体膜としては、酸化亜鉛(誘電率10)の他に、二
酸化シリコン(4,5)、窒化アルミニウム(8,5)
、アルミナ(10,5) 、酸化チタン(130)等を
もちいることができる。形成方法としては、スパンタリ
ング法、CVD法等を利用できる。In addition to zinc oxide (dielectric constant 10), silicon dioxide (4,5) and aluminum nitride (8,5) are used as dielectric films.
, alumina (10,5), titanium oxide (130), etc. can be used. As a forming method, a sputtering method, a CVD method, etc. can be used.
上記のように、誘電体膜の材料によって誘電率が異なる
ので、材料を変えたり、■を変えることによって導体パ
ターン間の容量を任意に設定することが可能となる。そ
れによって、素子の特性のばらつきを補正することも可
能となる。As mentioned above, since the dielectric constant differs depending on the material of the dielectric film, it is possible to arbitrarily set the capacitance between the conductor patterns by changing the material or changing . This also makes it possible to correct variations in device characteristics.
なお、容量を形成する導体パターンを設ける位置は上記
の例に限られないが、共振器間に設けることによって、
近接して配置した場合の不要な弾性的結合を切ることの
できる効果もある。また、アース電位に直接接続された
導体パターンを対向して配置させてもよい。Note that the position where the conductor pattern forming the capacitance is provided is not limited to the above example, but by providing it between the resonators,
It also has the effect of breaking unnecessary elastic bonds when they are placed close to each other. Further, conductor patterns directly connected to the ground potential may be arranged facing each other.
以上の説明は、多重モード共振器型フィルタの例につい
てであるが、共振器を多段に形成するタイプのフィルタ
全般に応用できる。The above explanation is about an example of a multi-mode resonator type filter, but it can be applied to all types of filters in which resonators are formed in multiple stages.
本発明によれば、フィルタとしての帯域通過特性が大幅
に改善される。これは、共振周波数のずれが容量の形成
によって補償されるためである。According to the present invention, bandpass characteristics as a filter are significantly improved. This is because the shift in resonance frequency is compensated by the formation of capacitance.
また、インピーダンスの改善も寄与している。Improving impedance also contributes.
また、そのための導体パターンを形成するのも共振器間
の小さいスペースで済むので、装置の小型化の面でも有
利である。Further, since the conductor pattern for this purpose can be formed in a small space between the resonators, it is advantageous in terms of miniaturization of the device.
更に、容量の調整が容易であり、特性の調整も容易とな
る。Furthermore, the capacitance can be easily adjusted, and the characteristics can also be easily adjusted.
第1図、第2図は本発明の実施例を示す平面図であり、
第3図は同じ〈実施例の部分側面断面図である。第4図
は従来の二重モー1′共振器型フイルタの平面図、第5
図、第6図はその特性の説明図である。1 and 2 are plan views showing embodiments of the present invention,
FIG. 3 is a partial side sectional view of the same embodiment. Figure 4 is a plan view of a conventional dual motor 1' resonator filter;
FIG. 6 is an explanatory diagram of its characteristics.
Claims (6)
挟む反射器とから成る共振器を複数個配置し、その弾性
的結合を利用する多重モード共振器型フィルタにおいて
、該インターデジタル電極を接続する導体パターンから
伸びる第一の導体パターンと接地された第二の導体パタ
ーンが対向するように配置され、該第一および第二の導
体パターン間の基板表面に誘電体膜を具えたことを特徴
とする多重モード共振器型表面弾性波フィルタ。(1) A plurality of resonators consisting of interdigital electrodes and reflectors sandwiching them are arranged on the surface of a piezoelectric substrate, and the interdigital electrodes are connected in a multimode resonator filter that utilizes the elastic coupling. A first conductive pattern extending from the conductive pattern and a grounded second conductive pattern are arranged to face each other, and a dielectric film is provided on the substrate surface between the first and second conductive patterns. Multimode resonator type surface acoustic wave filter.
する導体パターンである請求項第1項記載の多重モード
共振器型表面弾性波フィルタ。(2) The multimode resonator type surface acoustic wave filter according to claim 1, wherein the second conductive pattern is a conductive pattern connecting a grounded reflector.
され、該第一の導体パターンと平行である請求項第1項
記載の多重モード共振器型表面弾性波フィルタ。(3) The multimode resonator type surface acoustic wave filter according to claim 1, wherein the second conductor pattern is connected to a grounded reflector and is parallel to the first conductor pattern.
少なくとも一方が平行な二本以上の導体パターンに分割
され、他方の導体パターンを挟んで対向した請求項第1
項または第3項記載の多重モード共振器型表面弾性波フ
ィルタ。(4) Claim 1, wherein at least one of the first conductor pattern and the second conductor pattern is divided into two or more parallel conductor patterns, which face each other with the other conductor pattern in between.
The multimode resonator type surface acoustic wave filter according to item 1 or 3.
挟む反射器とから成る共振器を複数個配置し、その弾性
的結合を利用する多重モード共振器型フィルタの帯域通
過特性調整方法において、該インターデジタル電極を接
続する導体パターンから伸びる第一の導体パターンと接
地された第二の導体パターンが対向するように配置し、
該第一および第二の導体パターン間の基板表面に誘電体
膜を形成し、二つの導体パターン間に容量を形成するこ
とを特徴とする多重モード共振器型表面弾性波フィルタ
の帯域通過特性調整方法。(5) A method for adjusting the bandpass characteristics of a multimode resonator filter in which a plurality of resonators each consisting of interdigital electrodes and reflectors sandwiching the interdigital electrodes are arranged on the surface of a piezoelectric substrate and the elastic coupling thereof is utilized. A first conductor pattern extending from a conductor pattern connecting the interdigital electrodes and a grounded second conductor pattern are arranged so as to face each other,
Bandpass characteristic adjustment of a multimode resonator type surface acoustic wave filter, characterized in that a dielectric film is formed on the substrate surface between the first and second conductor patterns, and a capacitance is formed between the two conductor patterns. Method.
求項第5項記載の多重モード共振器型表面弾性波フィル
タの帯域通過特性調整方法。(6) The method for adjusting bandpass characteristics of a multimode resonator type surface acoustic wave filter according to claim 5, wherein the capacitance is adjusted by adjusting the coating amount of the dielectric film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10690288A JPH027613A (en) | 1988-04-28 | 1988-04-28 | Multiplex mode resonator type surface acoustic wave filter and its band pass characteristic adjusting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10690288A JPH027613A (en) | 1988-04-28 | 1988-04-28 | Multiplex mode resonator type surface acoustic wave filter and its band pass characteristic adjusting method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH027613A true JPH027613A (en) | 1990-01-11 |
Family
ID=14445388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10690288A Pending JPH027613A (en) | 1988-04-28 | 1988-04-28 | Multiplex mode resonator type surface acoustic wave filter and its band pass characteristic adjusting method |
Country Status (1)
Country | Link |
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JP (1) | JPH027613A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03278609A (en) * | 1990-03-28 | 1991-12-10 | Toko Inc | Surface acoustic wave multiplex mode filter and its pass band characteristic adjusting method |
JPH0435516A (en) * | 1990-05-31 | 1992-02-06 | Toko Inc | Surface acoustic wave multiple mode filter and its passing band characteristic adjusting method |
JPH0440705A (en) * | 1990-06-06 | 1992-02-12 | Murata Mfg Co Ltd | Longitudinal double mode surface acoustic wave filter |
JPH0438128U (en) * | 1990-07-26 | 1992-03-31 | ||
JPH0438129U (en) * | 1990-07-26 | 1992-03-31 | ||
JPH0438130U (en) * | 1990-07-26 | 1992-03-31 | ||
JPH04126034A (en) * | 1990-09-18 | 1992-04-27 | Handa Tekkosho:Kk | Drying of marine product or the like |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50144069A (en) * | 1974-05-10 | 1975-11-19 | ||
JPS61230419A (en) * | 1985-04-03 | 1986-10-14 | Toyo Commun Equip Co Ltd | Two-port idt excitation type resonator and resonance filter |
JPS6261413A (en) * | 1985-09-11 | 1987-03-18 | Toyo Commun Equip Co Ltd | Shield pattern for multi-stage connection saw multiplex mode filter |
-
1988
- 1988-04-28 JP JP10690288A patent/JPH027613A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50144069A (en) * | 1974-05-10 | 1975-11-19 | ||
JPS61230419A (en) * | 1985-04-03 | 1986-10-14 | Toyo Commun Equip Co Ltd | Two-port idt excitation type resonator and resonance filter |
JPS6261413A (en) * | 1985-09-11 | 1987-03-18 | Toyo Commun Equip Co Ltd | Shield pattern for multi-stage connection saw multiplex mode filter |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03278609A (en) * | 1990-03-28 | 1991-12-10 | Toko Inc | Surface acoustic wave multiplex mode filter and its pass band characteristic adjusting method |
JPH0435516A (en) * | 1990-05-31 | 1992-02-06 | Toko Inc | Surface acoustic wave multiple mode filter and its passing band characteristic adjusting method |
JPH0440705A (en) * | 1990-06-06 | 1992-02-12 | Murata Mfg Co Ltd | Longitudinal double mode surface acoustic wave filter |
JPH0438128U (en) * | 1990-07-26 | 1992-03-31 | ||
JPH0438129U (en) * | 1990-07-26 | 1992-03-31 | ||
JPH0438130U (en) * | 1990-07-26 | 1992-03-31 | ||
JPH04126034A (en) * | 1990-09-18 | 1992-04-27 | Handa Tekkosho:Kk | Drying of marine product or the like |
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