JPH0256958A - Manufacture of resin seal type semiconductor device - Google Patents
Manufacture of resin seal type semiconductor deviceInfo
- Publication number
- JPH0256958A JPH0256958A JP20922088A JP20922088A JPH0256958A JP H0256958 A JPH0256958 A JP H0256958A JP 20922088 A JP20922088 A JP 20922088A JP 20922088 A JP20922088 A JP 20922088A JP H0256958 A JPH0256958 A JP H0256958A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- mold
- leads
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 27
- 229920005989 resin Polymers 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229920001187 thermosetting polymer Polymers 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing a resin-sealed semiconductor device.
従来、樹脂封止型半導体装置は第３図に示す様に、ダイ
パッド２、リード３、タイバー４、吊りリード５等から
構成されるリードフレーム１のダイパッド２上に半導体
チップ２０を固定したのち、封止樹脂】０によりダイパ
ッド部とリード３の一部を樹脂封止して製造されていた
。この樹脂封止型半導体装置に用いられるリードフレー
ムは、封止樹脂１０との密着性を向上させるために、ダ
イパッド２とリード３の先端部を除く部分には、酸化膜
６や窒化膜などが形成されていた。Conventionally, as shown in FIG. 3, in a resin-sealed semiconductor device, a semiconductor chip 20 is fixed onto a die pad 2 of a lead frame 1 consisting of a die pad 2, leads 3, tie bars 4, hanging leads 5, etc. The die pad part and part of the leads 3 were sealed with resin using Sealing Resin]0. The lead frame used in this resin-sealed semiconductor device has an oxide film 6, a nitride film, etc. on the parts other than the die pad 2 and the tips of the leads 3 in order to improve the adhesion with the sealing resin 10. had been formed.
上述した従来の樹脂封止型半導体装置の製造に用いるリ
ードフレーム１の表面には、酸化膜や窒化膜が形成され
ているため、樹脂封止後、リードフレーム１の金型のゲ
ート対応部１１に密着する封止樹脂からなるランナー１
０Ａが剥離しにくいという欠点がある。Since an oxide film or a nitride film is formed on the surface of the lead frame 1 used for manufacturing the conventional resin-sealed semiconductor device described above, after the resin sealing, the gate corresponding part 11 of the mold of the lead frame 1 is removed. Runner 1 made of sealing resin that adheres to
There is a drawback that 0A is difficult to peel off.
また最近、耐湿性向上やクラック対策のため、リードフ
レームとの密着性が向上した樹脂が開発されてきている
。このようにリードフレームや樹脂の改善により、リー
ドフレームと樹脂の密着は向上したが、リードフレーム
から取り外さなければならないゲート部のランナーまで
も密着性がよくなってしまっている。そのために樹脂封
止型半導体装置の製造工程における作業性が悪くなって
いる。さらに、リードフレームの金型のゲート対応部上
に封止樹脂が剥離されずに残り、ゲートへり、パリ残り
が多くなるという欠点もある。Recently, resins with improved adhesion to lead frames have been developed to improve moisture resistance and prevent cracks. As described above, improvements in the lead frame and resin have improved the adhesion between the lead frame and the resin, but the adhesion has also improved even to the runner of the gate portion, which must be removed from the lead frame. For this reason, workability in the manufacturing process of resin-sealed semiconductor devices has deteriorated. Furthermore, there is also a drawback that the sealing resin remains on the gate corresponding portion of the mold of the lead frame without being peeled off, resulting in a large amount of gate edge and chipping remaining.
本発明の樹脂封止型半導体装置の製造方法は、半導体チ
ップを固定したリードフレームのダイパッド部とリード
の一部を樹脂封止する樹脂封止型半導体装置の製造方法
において、樹脂封止時に樹脂が注入される金型のゲート
に対応する前記リードフレームの表面に、あらかじめ封
止樹脂を剥離するための有機膜を形成しておくものであ
る。The method for manufacturing a resin-sealed semiconductor device of the present invention is a method for manufacturing a resin-sealed semiconductor device in which a die pad portion of a lead frame to which a semiconductor chip is fixed and a part of the leads are sealed with resin. An organic film for peeling off the sealing resin is formed in advance on the surface of the lead frame corresponding to the gate of the mold into which the resin is injected.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例を説明するためのリード
フレームの上面図である。FIG. 1 is a top view of a lead frame for explaining a first embodiment of the present invention.
第１図に示すように、ダイパッド２、リード３、タイバ
ー４及び吊りリード５等から構成されたリードフレーム
１のダイパッド２上に半導体チップ２０を固定したのち
、リード３と半導体チップ２０上のポンディングパッド
をボンディングワイヤ（図示せず）で接続する。尚６は
ダイパッド２とリード３の一部を覆う酸化膜である。As shown in FIG. 1, after the semiconductor chip 20 is fixed on the die pad 2 of the lead frame 1, which is composed of the die pad 2, leads 3, tie bars 4, hanging leads 5, etc., the leads 3 and the semiconductor chip 20 are Connect the bonding pads with bonding wires (not shown). Note that 6 is an oxide film that covers part of the die pad 2 and leads 3.
次に金型を用いて半導体チップ２０等を樹脂封止する前
に、リードフレーム１上の金型のゲート対応部１１にワ
ックスを滴下し、熱硬化や乾燥等によりワックス膜７を
形成する。以下常法に従って封止樹脂を用いて半導体チ
ップ２０からリード３の一部まで樹脂封止する。Next, before resin-sealing the semiconductor chip 20 and the like using a mold, wax is dropped onto the gate corresponding portion 11 of the mold on the lead frame 1, and a wax film 7 is formed by thermal curing, drying, or the like. Thereafter, parts of the leads 3 from the semiconductor chip 20 are sealed with a sealing resin according to a conventional method.
このように第１の実施例によれば、リードフレーム１の
金型のゲート対応部１１にワックス膜７を形成したのち
樹脂封止するため、金型のゲート対応部１１におけるラ
ンナーは容易に剥離されるので、ゲート残りやパリ残り
が発生することはなくなる。尚、ワックス膜１１の代り
にシリコンオイル等の他の有機膜を形成してもよく、そ
の形状は円形でなくてもよいことは勿論である。According to the first embodiment, since the wax film 7 is formed on the gate corresponding part 11 of the mold of the lead frame 1 and then sealed with resin, the runner in the gate corresponding part 11 of the mold is easily peeled off. Therefore, gate residuals and Paris residuals will not occur. Note that other organic films such as silicone oil may be formed in place of the wax film 11, and the shape does not necessarily have to be circular.
第２図は本発明の第２の実施例を説明するためのリード
フレームの上面図である。FIG. 2 is a top view of a lead frame for explaining a second embodiment of the present invention.
この第２の実施例ではダイパッド２上に半導体チップを
固着する前に、酸化膜６が被覆されているリードフレー
ムの、金型のゲート対応部１１に粘着材を付着している
シリコンテープ８を接着させる。接着方法としては、シ
リコンテープを所定の形状に切断後、熱圧着によりリー
ドフレームに接着する、以下常法に従って樹脂封止を行
なう。In this second embodiment, before fixing the semiconductor chip on the die pad 2, a silicon tape 8 with an adhesive attached to the gate corresponding part 11 of the mold of the lead frame covered with the oxide film 6 is applied. Glue. The bonding method is to cut the silicone tape into a predetermined shape and then bond it to the lead frame by thermocompression bonding, followed by resin sealing according to a conventional method.
この第２の実施例では、第１の実施例に比べ熱硬化や乾
燥工程が省かれるため、作業が簡便になる利点がある。The second embodiment has the advantage of simplifying the work since heat curing and drying steps are omitted compared to the first embodiment.
以上説明したように本発明は、リードフレームの、金型
のゲート対応部に封止樹脂を剥離するための有機膜を形
成したのち樹脂封止を行うことにより、リードフレーム
上のゲート残り、パリ残りを低減できると共に、リード
フレーム上のランナーを簡単に剥離できるため、作業性
を向上させることができるという効果がある。As explained above, the present invention forms an organic film for peeling off the sealing resin on the part of the lead frame that corresponds to the gate of the mold, and then performs resin sealing to remove the remaining gate on the lead frame. Not only can the amount of residue be reduced, but also the runner on the lead frame can be easily peeled off, which has the effect of improving workability.
第１図及び第２図は本発明の第１及び第２の実施例を説
明するためのリードフレームの上面図、第３図は従来の
樹脂封止型半導体装置の製造方法を説明するためのリー
ドフレームの上面図である。
１・・・リードフレーム、２・・・ダイパッド、３・・
・リード、４・・・タイバー ５・・・吊りリード、６
・・・酸化膜、７・・・ワックス膜、８・・・シリコン
テープ、９・・・封止樹脂、ＩＯＡ・・・ランナー、１
１・・・金型のゲート対応部、２０・・・半導体チップ
。1 and 2 are top views of a lead frame for explaining the first and second embodiments of the present invention, and FIG. 3 is a top view of a lead frame for explaining a conventional method of manufacturing a resin-sealed semiconductor device. FIG. 3 is a top view of the lead frame. 1...Lead frame, 2...Die pad, 3...
・Lead, 4...Tie bar 5...Hanging lead, 6
... Oxide film, 7... Wax film, 8... Silicone tape, 9... Sealing resin, IOA... Runner, 1
1... Gate corresponding part of the mold, 20... Semiconductor chip.
Claims (1)
とリードの一部を樹脂封止する樹脂封止型半導体装置の
製造方法において、樹脂封止時に樹脂が注入される金型
のゲートに対応する前記リードフレームの表面に、あら
かじめ封止樹脂を剥離するための有機膜を形成しておく
ことを特徴とする樹脂封止型半導体装置の製造方法。In a method for manufacturing a resin-sealed semiconductor device, in which a die pad portion of a lead frame to which a semiconductor chip is fixed and a part of the leads are sealed with resin, the lead frame corresponds to a gate of a mold into which resin is injected during resin sealing. 1. A method for manufacturing a resin-sealed semiconductor device, comprising forming an organic film on the surface of the semiconductor device in advance for peeling off the sealing resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20922088A JPH0256958A (en) | 1988-08-22 | 1988-08-22 | Manufacture of resin seal type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20922088A JPH0256958A (en) | 1988-08-22 | 1988-08-22 | Manufacture of resin seal type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0256958A true JPH0256958A (en) | 1990-02-26 |
Family
ID=16569336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20922088A Pending JPH0256958A (en) | 1988-08-22 | 1988-08-22 | Manufacture of resin seal type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0256958A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412157A (en) * | 1992-07-17 | 1995-05-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| JP2013026550A (en) * | 2011-07-25 | 2013-02-04 | Apic Yamada Corp | Method of manufacturing semiconductor device |
-
1988
- 1988-08-22 JP JP20922088A patent/JPH0256958A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412157A (en) * | 1992-07-17 | 1995-05-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| JP2013026550A (en) * | 2011-07-25 | 2013-02-04 | Apic Yamada Corp | Method of manufacturing semiconductor device |
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