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JPH025246A - Optical information recording/reproducing/erasing member and its production - Google Patents

Optical information recording/reproducing/erasing member and its production

Info

Publication number
JPH025246A
JPH025246A JP63153929A JP15392988A JPH025246A JP H025246 A JPH025246 A JP H025246A JP 63153929 A JP63153929 A JP 63153929A JP 15392988 A JP15392988 A JP 15392988A JP H025246 A JPH025246 A JP H025246A
Authority
JP
Japan
Prior art keywords
recording
thin film
layer
resistant layer
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63153929A
Other languages
Japanese (ja)
Other versions
JPH07109663B2 (en
Inventor
Takeo Ota
太田 威夫
Kazuo Inoue
和夫 井上
Masami Uchida
内田 正美
Katsumi Kawahara
克巳 河原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63153929A priority Critical patent/JPH07109663B2/en
Publication of JPH025246A publication Critical patent/JPH025246A/en
Publication of JPH07109663B2 publication Critical patent/JPH07109663B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To improve the C/N and the erasion factor characteristics in a multi- cycle recording and erasing actions by crystallizing a recording thin film layer formed on a substrate containing a heat resistant layer to increase the density of said thin film layer and providing a heat resistant layer on the thin film layer. CONSTITUTION:A 1st heat resistant layer 2 is formed on a substrate 1 and a recording thin film layer 3 is formed on the layer 2. Then a 2nd heat resistant layer is provided in a state where the layer 3 is crystallized for reduction of its volume. Thus it is possible to prevent the change of the signal quality corresponding to the heating cycle of a recording medium which records and erases the information with use of a means which heats up the film of the layer 3 to secure the crystal states A and B or a means which ensures a melting/ quenching amorphous state and a heating crystallization state. In such a way, the C/N and the erasion factor characteristics can be improved in a multi-cycle recording and erasing actions.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はレーザービーム等により、情報を高密度、大容
量で記録再生、及び消去できる光学情報記録再生消去部
材とその製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical information recording/reproducing/erasing member capable of recording, reproducing, and erasing information with high density and large capacity using a laser beam or the like, and a method for manufacturing the same.

従来の技術 光デイスクメモリに関しては、TeとTea。Conventional technology Regarding optical disk memory, Te and Tea.

を主成分とするTeOx  (0<x<2.0)薄膜を
用いた追記型のディスクがある。さらに、レーザ光によ
り薄膜を加熱し、溶融し、急冷することにより、非晶質
化し情報を記録しまたこれを加熱し、徐冷することによ
り結晶化し、消去することができる材料としては、ニス
・アール・オプシンスキ(S 、 R、Ovshins
ky)氏等のカルコゲン材料Ge15Te81sbz 
Sz等が知られている。また、Asz S、やAs、S
e=あるいはSb、Se。
There is a write-once type disk using a thin film of TeOx (0<x<2.0) whose main component is TeOx (0<x<2.0). Furthermore, varnish is a material that can record information by heating a thin film with laser light, melting it, and rapidly cooling it, and then crystallizing and erasing information by heating and slowly cooling it.・R. Ovshinski (S, R, Ovshins)
Chalcogen material Ge15Te81sbz by Mr. ky) et al.
Sz etc. are known. Also, Asz S, and As, S
e=or Sb, Se.

等カルコゲン元素と周期律表第■族あるいはGe等の第
■族元素等の組み合せからなる薄膜等が広く知られてい
る。これらの薄膜にレーザ光で情報を記録し、その情報
を消去する方法としては、あらかじめ薄膜を結晶化させ
ておき、これにφ1μmに絞ったレーザ光を情報に対応
させて強度変調を施し、例えば、円盤状の記録ディスク
を回転せしめて照射し、このレーザ光照射部位は、薄膜
の融点以上に昇温し、かつ急冷し、非晶質化したマーク
として情報の記録がおこなえる。この情報を消去するに
際しては薄膜を加熱昇温させ、再び結晶化させる方法が
しられている。相変化を利用した光ディスクは、一般に
耐熱層を設けたディスク基板に記録薄膜を形成し、その
記録薄膜の上にさらに耐熱層を設け、熱変形等による劣
化を防止する構成を用いている。これらの層を形成した
のちに、記録薄膜層を初期化つまり結晶化させて光ディ
スクとして用いる方法が知られている。
Thin films made of a combination of an isochalcogenic element and an element from group Ⅰ of the periodic table or a group ① element such as Ge are widely known. In order to record information on these thin films with laser light and erase that information, the thin film is crystallized in advance, and a laser light focused on a diameter of 1 μm is intensity-modulated in accordance with the information, for example. A disc-shaped recording disk is rotated and irradiated, and the area irradiated with the laser beam is heated to a temperature higher than the melting point of the thin film and rapidly cooled, so that information can be recorded as an amorphous mark. A known method for erasing this information is to heat the thin film to raise its temperature and crystallize it again. Optical discs that utilize phase change generally use a configuration in which a recording thin film is formed on a disc substrate provided with a heat-resistant layer, and a heat-resistant layer is further provided on the recording thin film to prevent deterioration due to thermal deformation or the like. A method is known in which, after forming these layers, the recording thin film layer is initialized, that is, crystallized, and used as an optical disk.

発明が解決しようとする課題 薄膜を加熱昇温し、結晶状MA、結晶状態Bを形成する
手段を用いる情報記録および消去可能な記録媒体あるい
は、溶融急冷非晶質化および加熱昇温結晶化の手段を用
いる情報記録および消去可能な記録媒体における課題は
加熱サイクルに対応して信号品質が変動することである
。この変動要因としては、記録スポット光および消去ス
ポット光による400℃以上の急速な加熱、冷却の多数
回のくりかえし刺激による基板材質の熱的、機械的な損
傷がある。さらに、記録薄膜の熱的、機械的な損傷があ
る。記録薄膜については、記録状態つまりアモルファス
状態と、消去状態つまり結晶状態の間で密度差が生じる
。基板あるいは記録膜が以上のような変化を生じた場合
、記録再生、消去のサイクルにおいて、ノイズの増大を
生じ、サイクル特性の劣化が発生するという課題があっ
た。
Problems to be Solved by the Invention Information recording and erasable recording media using a means of heating a thin film to form crystalline MA and crystalline state B, or a method of melting and quenching amorphousization and heating and temperature-raising crystallization. A problem with electronic information recording and erasable recording media is that the signal quality fluctuates in response to heating cycles. Factors contributing to this variation include thermal and mechanical damage to the substrate material due to repeated stimulation of rapid heating and cooling of 400° C. or higher by the recording spot light and the erasing spot light many times. Furthermore, there is thermal and mechanical damage to the recording thin film. Regarding the recording thin film, a density difference occurs between the recorded state, that is, the amorphous state, and the erased state, that is, the crystalline state. When the substrate or the recording film undergoes the above changes, there is a problem in that noise increases during recording/reproducing and erasing cycles, resulting in deterioration of cycle characteristics.

本発明の第一の目的はサイクル特性の安定な部材を提供
することである。第二の目的は記録部材の初期化感度を
向上させることである。
The first object of the present invention is to provide a member with stable cycle characteristics. The second purpose is to improve the initialization sensitivity of the recording member.

課題を解決するための手段 本発明は、レーザ光等の照射により熱的に薄膜の状態を
変化させて情報を記録および消去する部材において、薄
膜材料として、Ge、Te、Sbの混合体とし、これを
耐熱層を設けた基板の上に形成して、あらかじめこの記
録薄膜層を結晶化させておき、密度の高い状態にし、し
かるのちにこの上に耐熱層を設けてなることを特徴とす
る光学情報記録再生消去部材とその製造方法を提供する
ものである。
Means for Solving the Problems The present invention provides a member for recording and erasing information by thermally changing the state of the thin film through irradiation with laser light or the like, which uses a mixture of Ge, Te, and Sb as the thin film material; This recording thin film layer is formed on a substrate provided with a heat-resistant layer, the recording thin film layer is crystallized in advance to a high density state, and then a heat-resistant layer is provided thereon. The present invention provides an optical information recording/reproducing/erasing member and a method for manufacturing the same.

作用 以上の構成により、多サイクル記録および消去において
C/N、消去率特性がすぐれている。また、記録部材の
初期化感度が高いという特徴が得られる。
Function: The structure described above provides excellent C/N and erasure rate characteristics in multi-cycle recording and erasing. Further, the recording member has a high initialization sensitivity.

実施例1 以下本発明の一実施例について、図面を参照しながら説
明する。
Example 1 An example of the present invention will be described below with reference to the drawings.

記録層である薄膜を形成する基板としては、あらかじめ
、レーザ光案内用の溝あるいは、ピント列を形成したポ
リカーボネイト等の樹脂基板あるいは、ガラス板を用い
る。この表面にあらかじめ耐熱性のすぐれたZnSある
いはSin、等の第一の無機誘電体層を形成しておく。
As the substrate on which the thin film serving as the recording layer is formed, a resin substrate made of polycarbonate or the like, or a glass plate, on which grooves or focus lines for guiding laser light are formed in advance, is used. A first inorganic dielectric layer, such as ZnS or Sin, which has excellent heat resistance, is formed on this surface in advance.

この誘電体層としてはStagを15モル%以上含ませ
たZnS誘電体層が好ましい。
This dielectric layer is preferably a ZnS dielectric layer containing 15 mol % or more of Stag.

この上に、G e s T e s S bからなる混
合薄膜を形成する。薄膜形成の方法としては、真空蒸着
あるいは、スパッタ法が使用できる。かかる状態におい
ては、記録薄膜層はアモルファス状態である。そこで記
録薄膜層を加熱し結晶化させることが本発明の特徴であ
り、加熱源としてはArレーザ、半導体レーザあるいは
ハロゲンランプ等が使用できる。結晶化すなわち初期化
することによりディスクの反射率は増大する。しかるの
ちに、第二の無機誘電体層を耐熱層として、この記録薄
膜層の上に形成する。さらにこの無機誘電体層の上に反
射層を設けることにより、ディスクの記録、消去感度の
向上をはかることもできる。この薄膜の膜厚として80
nmを選ぶ。さらに第二の耐熱層の上に保護板としてポ
リカーボネイト板を接着剤で密着する。
A mixed thin film consisting of G e s T e s S b is formed on this. As a method for forming a thin film, vacuum evaporation or sputtering can be used. In such a state, the recording thin film layer is in an amorphous state. Therefore, a feature of the present invention is to heat and crystallize the recording thin film layer, and an Ar laser, a semiconductor laser, a halogen lamp, or the like can be used as the heating source. Crystallization or initialization increases the reflectance of the disk. Thereafter, a second inorganic dielectric layer is formed as a heat-resistant layer on this recording thin film layer. Furthermore, by providing a reflective layer on this inorganic dielectric layer, it is possible to improve the recording and erasing sensitivity of the disc. The thickness of this thin film is 80
Select nm. Furthermore, a polycarbonate plate is adhered as a protective plate onto the second heat-resistant layer with an adhesive.

130 amのディスクとして、1800rpm回転で
f1=3.43Mtlzの信号と、f 2 =1.OM
t(zの信号のオーバーライド特性を測定する。オーバ
ーライドは、1ケのサークルスポットφ1μmのレーザ
光によす、高いパワーレベル16IIW、低いパワーレ
ベル8m−のパワーレベル間の変調で、高いパワーレベ
ルで非晶質化マークを形成し、低いパワーレベルで非晶
質化マークを結晶化して消去する同時消録の方法である
As a 130 am disk, a signal of f1 = 3.43 Mtlz at 1800 rpm rotation and f 2 = 1. OM
Measure the override characteristics of the signal t(z.The override is modulation between a high power level of 16IIW and a low power level of 8m- using a laser beam of one circle spot φ1μm. This is a simultaneous erasing method in which an amorphous mark is formed and the amorphous mark is crystallized and erased at a low power level.

第1図に記録薄膜の加熱結晶化状態の模式図をしめす。FIG. 1 shows a schematic diagram of the heated crystallization state of the recording thin film.

蒸着状態に比べ加熱結晶化した部分は密度が増大してい
る。加熱結晶化初期化するのに必要なパワーは第2の誘
電体を形成し、これに保護板を接着したものに比較して
約半分のパワーで可能であり、初期化感度が高い。サイ
クル特性については、ディスク構成後に結晶化初期化し
たものに比較して100万サイクル測定においてノイズ
レベルの変動は3dB以内で安定している。
The density of the heated and crystallized portion is increased compared to the vapor-deposited state. The power required to initialize the crystallization by heating is about half that of a method in which a second dielectric is formed and a protective plate is bonded to this, and the initialization sensitivity is high. As for the cycle characteristics, the noise level fluctuation is stable within 3 dB after 1 million cycle measurements compared to the case where the crystallization was initialized after the disk configuration.

実施例2 結晶化初期化は記録膜形成時におこなうことも可能であ
る。真空チャンバー内においてハロゲンランプを用いて
基板を加熱しながら記録膜を形成する。あらかじめ基板
の上に第一の誘電体層を設け、この上に記録薄膜層を加
熱しながら形成する。
Example 2 Crystallization initialization can also be performed at the time of recording film formation. A recording film is formed while heating the substrate using a halogen lamp in a vacuum chamber. A first dielectric layer is provided on the substrate in advance, and a recording thin film layer is formed thereon while being heated.

記録薄膜層は形成すると同時に結晶化初期化がなされる
。つぎにこの結晶化した記t!薄膜層の上に第2の耐熱
層誘電体層を設ける。しかるのちに接着剤により保護板
をはり合わせる。記録薄膜の組成としてG e + T
 e +  S bの混合体を用いることにより1つの
ビームでオーバライドできるディスクを得る。記録特性
はC/N比50dB以上、消去特性は消去率30dB以
上を得る。
The recording thin film layer is initialized for crystallization at the same time as it is formed. Next, this crystallized record! A second heat-resistant dielectric layer is provided on the thin film layer. After that, the protective plates are attached with adhesive. G e + T as the composition of the recording thin film
By using a mixture of e + S b we obtain a disk that can be overridden with one beam. As for recording characteristics, a C/N ratio of 50 dB or more is obtained, and as for erasing characteristics, an erasure rate of 30 dB or more is obtained.

実施例3 基板上に第一の耐熱層を設け、その上に記録薄膜層を形
成し、この記録薄膜層の結晶化において、加熱条件を結
晶化飽和パワーより低パワーに設定する。これにより、
この記録薄膜の結晶化収縮率は小さくなる。同様に記録
薄膜形成時における加熱条件を下げることにより収縮率
を小さくできる。
Example 3 A first heat-resistant layer is provided on a substrate, a recording thin film layer is formed thereon, and in crystallizing the recording thin film layer, heating conditions are set to a power lower than the crystallization saturation power. This results in
The crystallization shrinkage rate of this recording thin film becomes small. Similarly, the shrinkage rate can be reduced by lowering the heating conditions during formation of the recording thin film.

この状態で第二の耐熱層を記録薄膜層の上に形成し、保
護板を設ける。かかるディスクに信号記録をほどこすと
、トランク上に非晶質マークと結晶部分が交互に配列し
て信号記録がおこなえる。この場合は、元の中間的な収
縮状態と信号記録時の収縮状態の平均的な密度が等価に
なり、体積差が減少し、サイクル特性が安定になる。
In this state, a second heat-resistant layer is formed on the recording thin film layer, and a protective plate is provided. When signal recording is performed on such a disk, amorphous marks and crystalline portions are arranged alternately on the trunk, allowing signal recording to be performed. In this case, the average density of the original intermediate contracted state and the contracted state at the time of signal recording become equivalent, the volume difference decreases, and the cycle characteristics become stable.

発明の効果 レーザ光による記録再生消去をおこなう部材において、
記録薄膜層を耐熱層でサンドインチする構成で、記録薄
膜を加熱結晶化した後に、この上に第2の耐熱層を形成
して構成する光学記録再生消去部材はつぎの効果を有す
る。
Effects of the invention In a member that performs recording, reproducing and erasing using a laser beam,
An optical recording/reproducing/erasing member constructed by sandwiching a recording thin film layer with a heat-resistant layer and forming a second heat-resistant layer thereon after heating and crystallizing the recording thin film has the following effects.

(1)  多サイクル記録および消去においてC/N。(1) C/N in multi-cycle recording and erasing.

消去率特性がすぐれる。Excellent erasure rate characteristics.

(2)  記録部材の初期化感度が高い。(2) The initialization sensitivity of the recording member is high.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における光学情報記録再生消
去部材の記録薄膜形成後一部活晶化した状態の略図と加
熱光ビームの模式図、第2図は記録薄膜形成時に加熱結
晶化する方法の説明図である。 1・・・・・・基板、2・・・・・・第一の耐熱層、3
・・・・・・記録薄膜層、4・・・・・・記録薄膜層結
晶化部位、5・・・・・・加熱光ビーム、6・・・・・
・記録薄膜蒸着源、7・・・・・・膜加熱ランプ、8・
・・・・・真空チャンバー・代理人の氏名 弁理士 中
尾敏男 はか1名第 図 第 図
Fig. 1 is a schematic diagram of an optical information recording/reproducing/erasing member according to an embodiment of the present invention in a partially activated crystallized state after formation of a recording thin film, and a schematic diagram of a heating light beam, and Fig. 2 is a schematic diagram of heating crystallization during formation of a recording thin film. It is an explanatory diagram of a method. 1...Substrate, 2...First heat-resistant layer, 3
... Recording thin film layer, 4 ... Recording thin film layer crystallization site, 5 ... Heating light beam, 6 ...
・Recording thin film deposition source, 7... Film heating lamp, 8.
...Vacuum chamber/Name of agent: Patent attorney Toshio Nakao (1 person)

Claims (6)

【特許請求の範囲】[Claims] (1)レーザー光の照射により、そのエネルギーを吸収
して昇温し、構造変化し、光学定数がかわる性質を有す
る記録薄膜を用い、前記レーザー光の強度変調により情
報を記録する部材において、前記記録薄膜層の上面およ
び下面に耐熱層を有する構成で、基盤上に第一の耐熱層
を設け次に前記記録薄膜層を設け前記記録薄膜層の体積
を収縮させた状態で第二の耐熱層を設けてなることを特
徴とする光学情報記録再生消去部材。
(1) A member that records information by modulating the intensity of the laser beam, using a recording thin film that absorbs the energy of the laser beam, raises its temperature, changes its structure, and changes its optical constants. The structure has a heat resistant layer on the upper and lower surfaces of the recording thin film layer, and a first heat resistant layer is provided on the substrate, and then the recording thin film layer is provided, and the second heat resistant layer is formed with the volume of the recording thin film layer contracted. An optical information recording/reproducing/erasing member characterized by comprising:
(2)第一の耐熱層の上に記録薄膜層を結晶状態で形成
し、次にその上に第二の耐熱層を形成してなることを特
徴とする請求項(1)記載の光学情報記録再生消去部材
(2) Optical information according to claim (1), characterized in that a recording thin film layer is formed in a crystalline state on the first heat-resistant layer, and then a second heat-resistant layer is formed thereon. Recording, reproducing and erasing member.
(3)第一の耐熱層の上に記録薄膜層を設け、その後に
前記記録薄膜層を加熱し、結晶状態に変化せしめ、しか
る後に第二の耐熱層を形成してなることを特徴とする光
学情報記録再生消去部材の製造方法。
(3) A recording thin film layer is provided on the first heat-resistant layer, and then the recording thin film layer is heated to change it to a crystalline state, and then a second heat-resistant layer is formed. A method of manufacturing an optical information recording/reproducing/erasing member.
(4)第一の耐熱層の上に記録薄膜層を設け、該記録薄
膜層の体積をアモルファス状態と結晶状態のほぼ平均の
体積にせしめて、その上に第二の耐熱層を形成してなる
ことを特徴とする請求項(1)記載の光学情報記録再生
消去部材。
(4) A recording thin film layer is provided on the first heat resistant layer, the volume of the recording thin film layer is made to be approximately the average volume of the amorphous state and the crystalline state, and a second heat resistant layer is formed thereon. The optical information recording/reproducing/erasing member according to claim (1).
(5)耐熱層としてSiO_2を含ませてなるZnSを
用いることを特徴とする請求項(1)記載の光学情報記
録再生消去部材。
(5) The optical information recording/reproducing/erasing member according to claim (1), wherein ZnS containing SiO_2 is used as the heat-resistant layer.
(6)記録薄膜層としてTe、Ge、Sbからなる材料
を用いることを特徴とする請求項(1)記載の光学情報
記録再生消去部材。
(6) The optical information recording/reproducing/erasing member according to claim (1), wherein a material consisting of Te, Ge, and Sb is used for the recording thin film layer.
JP63153929A 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member and manufacturing method thereof Expired - Fee Related JPH07109663B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63153929A JPH07109663B2 (en) 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63153929A JPH07109663B2 (en) 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH025246A true JPH025246A (en) 1990-01-10
JPH07109663B2 JPH07109663B2 (en) 1995-11-22

Family

ID=15573166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63153929A Expired - Fee Related JPH07109663B2 (en) 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH07109663B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627012A (en) * 1995-02-13 1997-05-06 Tdk Corporation Method for preparing phase change optical recording medium
US5965323A (en) * 1997-02-27 1999-10-12 Tdk Corporation Method for preparing optical recording medium
US6242157B1 (en) 1996-08-09 2001-06-05 Tdk Corporation Optical recording medium and method for making
US6537721B2 (en) 1999-02-15 2003-03-25 Tdk Corporation Optical recording medium and method for its initialization
WO2003034420A1 (en) * 2001-10-12 2003-04-24 Tdk Corporation Optical recording medium manufacturing method and optical recording medium manufacturing apparatus
US6683275B2 (en) 2000-06-23 2004-01-27 Memex Optical Media Solutions Ag Method and apparatus for fabricating phase-change recording medium

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627012A (en) * 1995-02-13 1997-05-06 Tdk Corporation Method for preparing phase change optical recording medium
US6242157B1 (en) 1996-08-09 2001-06-05 Tdk Corporation Optical recording medium and method for making
US5965323A (en) * 1997-02-27 1999-10-12 Tdk Corporation Method for preparing optical recording medium
US6537721B2 (en) 1999-02-15 2003-03-25 Tdk Corporation Optical recording medium and method for its initialization
US6683275B2 (en) 2000-06-23 2004-01-27 Memex Optical Media Solutions Ag Method and apparatus for fabricating phase-change recording medium
WO2003034420A1 (en) * 2001-10-12 2003-04-24 Tdk Corporation Optical recording medium manufacturing method and optical recording medium manufacturing apparatus

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Publication number Publication date
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