JPH0235727A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0235727A JPH0235727A JP18598288A JP18598288A JPH0235727A JP H0235727 A JPH0235727 A JP H0235727A JP 18598288 A JP18598288 A JP 18598288A JP 18598288 A JP18598288 A JP 18598288A JP H0235727 A JPH0235727 A JP H0235727A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- bonding pad
- discoloration
- semiconductor device
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000001039 wet etching Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 abstract description 8
- 238000002845 discoloration Methods 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 7
- 238000005406 washing Methods 0.000 abstract description 5
- 238000006386 neutralization reaction Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体装置の製造方法に関し、特に半導体装置
の製造工程のうち、金属電極配線形成後、表面保護膜を
エツチングしたあとの洗浄方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and particularly relates to a method of cleaning after forming a metal electrode wiring and etching a surface protective film in the manufacturing process of a semiconductor device. be.
従来の技術
従来の半導体装置の製造方法について、第２図に示した
工程流れ図を参照しながら説明する。この流れ図は、半
導体ウェハー上に金属電極配線層を形成し、表面保護膜
を形成した後、ボンディングパッド領域の表面保護膜の
エツチングから洗浄までの流れを示したものである。こ
の工程は、拡散等により半導体素子が形成された半導体
ウェハー上に金属電極配線層を形成した後、ＰＳＧ等に
よる表面保護膜を形成し、写真食刻法によりボンディン
グパッド領域の表面保護膜をフッ酸等の強酸にて第１槽
で数分間エツチングするウェットエツチング工程１、第
２槽で半導体ウェハーに付いた強酸を純水にて薄めるデ
イツプ置換を数秒間行なう純水デイツプ置換工程２およ
び第３層３で、流水の純水にて数分間水洗し、強酸を完
全に洗い流す純水オーバーフロー洗浄工程３より成り立
っている。2. Description of the Related Art A conventional method for manufacturing a semiconductor device will be described with reference to the process flowchart shown in FIG. This flowchart shows the flow from forming a metal electrode wiring layer on a semiconductor wafer and forming a surface protective film to etching and cleaning the surface protective film in the bonding pad area. In this process, a metal electrode wiring layer is formed on a semiconductor wafer on which semiconductor elements have been formed by diffusion, etc., then a surface protection film made of PSG or the like is formed, and the surface protection film in the bonding pad area is fluorinated by photolithography. A wet etching step 1 involves etching with a strong acid such as acid for a few minutes in the first tank, and a pure water dip replacement step 2 and 3 involves diluting the strong acid attached to the semiconductor wafer with pure water for a few seconds in the second tank. Layer 3 consists of a pure water overflow cleaning step 3 in which the layer 3 is washed with running pure water for several minutes to completely wash away the strong acid.
発明が解決しようとする課題
しかしながら上記従来の工程における洗浄方法では、半
導体ウェハーをデイツプ置換液へ浸漬した時、エツチン
グにより露出したボンディングパッド領域の金属電極の
一部の表面が強酸と純水の反応により荒らされて、変色
し、あとの組立工程で、ボンディングパッド領域に金属
細線（ワイヤー）を接続する際、ワイヤーボンディング
強度が弱くなる欠点を有していた。Problems to be Solved by the Invention However, in the conventional cleaning method described above, when the semiconductor wafer is immersed in the dip replacement liquid, the surface of a part of the metal electrode in the bonding pad area exposed by etching may react with strong acid and pure water. This has the disadvantage that the wire bonding strength is weakened when thin metal wires (wires) are connected to the bonding pad area in the subsequent assembly process.
本発明は、上記従来の問題点を解決するもので、デイツ
プ置換液を変更することにより金属電極の変色を防止す
ることを目的とするものである。The present invention solves the above-mentioned conventional problems, and aims to prevent discoloration of metal electrodes by changing the dip replacement liquid.
課題を解決するための手段
この目的を達成するために本発明の半導体装置の製造方
法は、半導体素子が形成された半導体ウェハー上に金属
電極配線層を形成した後、表面保ＭＭを形成し、ボンデ
ィングパッド領域の前記表面保護膜をウェットエツチン
グした後、純水とエチレングリコールを混合した液で洗
浄し、この後、流水の純水で洗浄するものである。Means for Solving the Problems To achieve this object, the method for manufacturing a semiconductor device of the present invention includes forming a metal electrode wiring layer on a semiconductor wafer on which semiconductor elements are formed, and then forming a surface protection MM. After the surface protective film in the bonding pad area is wet-etched, it is washed with a mixture of pure water and ethylene glycol, and then washed with running pure water.
作用
本発明の半導体装置の製造方法によれば、表面保護膜を
エツチングした後、エチレングリコールと純水を混合し
た液を用いて洗浄するため、エツチング後の半導体ウェ
ハー上の露出した金属電極表面を、中和方向に促進し変
色を防止することができる。According to the method of manufacturing a semiconductor device of the present invention, after etching the surface protective film, cleaning is performed using a mixture of ethylene glycol and pure water, so that the exposed metal electrode surface on the semiconductor wafer after etching is cleaned. , it can promote neutralization and prevent discoloration.
実施例
以下、本発明の半導体装置の製造方法の実施例について
第１図で示した工程流れ図にそって説明する。EXAMPLE Hereinafter, an example of the method for manufacturing a semiconductor device of the present invention will be described along the process flowchart shown in FIG.
この工程は、拡散により半導体素子が形成された半導体
ウェハー上に金属電極配線層を形成したのち、リンを含
んだシリコンガラス（ＰＳＧ）等による表面保護膜を形
成し、写真食刻法によりボンディングパッド領域の表面
保護膜をフッ酸等の強酸にて、第１槽で数分間エツチン
グするウェットエツチング工程１、第２層で半導体ウェ
ハーに付いた強酸を従来の純水とは異なり、純水とエチ
レングリコールを容量比１：１の割合で混合した液で洗
浄を行う純水とエチレングリコールのデイツプ置換工程
４および第３槽で流水の純水で数分間水洗する純水オー
バーフロー洗浄工程３とから成り立っている。このよう
なデイツプ置換液を用いることにより、表面保護膜をエ
ツチングした後、半導体ウェハー上のボンディングパッ
ド領域に露出した金属電極表面を中和方向に促進し、変
色を防止する作用によりボンディングパッド表面の変色
や荒れの発生を防止することができる。In this process, a metal electrode wiring layer is formed on a semiconductor wafer on which semiconductor elements have been formed by diffusion, and then a surface protection film made of phosphorus-containing silicon glass (PSG) or the like is formed, and bonding pads are formed by photolithography. Wet etching process 1 involves etching the surface protective film of the area with a strong acid such as hydrofluoric acid for several minutes in the first bath.In the second layer, the strong acid attached to the semiconductor wafer is removed using pure water and ethylene, unlike conventional pure water. The process consists of a dip replacement step 4 of pure water and ethylene glycol in which washing is performed with a liquid mixed with glycol at a volume ratio of 1:1, and a pure water overflow washing step 3 in which washing is performed for several minutes with running pure water in a third tank. ing. By using such a dip replacement liquid, after etching the surface protective film, it promotes neutralization of the metal electrode surface exposed in the bonding pad area on the semiconductor wafer and prevents discoloration, thereby neutralizing the surface of the bonding pad. Discoloration and roughness can be prevented.
なお、純水とエチレングリコールの混合比は厳密に１＝
１でなくてもよく、はぼ１：工程度であればよい。In addition, the mixing ratio of pure water and ethylene glycol is strictly 1=
It doesn't have to be 1, it just needs to be 1: process level.
発明の効果
本発明の半導体装置の製造方法によれば、デイツプ置換
液として純水とエチレングリコールを混合したものを用
いることにより、ボンディングパッドの変色の発生がな
くなり、ワイヤをボンディングしたとき、ボンディング
強度を高めることができる。Effects of the Invention According to the method for manufacturing a semiconductor device of the present invention, by using a mixture of pure water and ethylene glycol as the dip replacement liquid, discoloration of the bonding pads is eliminated, and the bonding strength is improved when bonding wires. can be increased.
第１図は本発明の一実施例における半導体装置の製造方
法の工程流れ図、第２図は従来例の工程流れ図である。
１・・・・・・ウェットエツチング工程、３・・・・・
・純水オーバーフロー工程、４・・・・・・純水とエチ
レングリコールのデイツプ置換工程。FIG. 1 is a process flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a process flowchart of a conventional example. 1...Wet etching process, 3...
・Pure water overflow step, 4... Deep replacement step of pure water and ethylene glycol.
Claims (1)
線層を形成した後、表面保護膜を形成し、ボンディング
パッド領域の前記表面保護膜をウェトエッチングした後
、純水にエチレングリコールを混合した液を用いて洗浄
し、この後、流水の純水で洗浄することを特徴とする半
導体装置の製造方法。After forming a metal electrode wiring layer on a semiconductor wafer on which semiconductor elements are formed, a surface protection film is formed, and after wet etching the surface protection film in the bonding pad area, a solution of pure water mixed with ethylene glycol is etched. 1. A method for manufacturing a semiconductor device, which comprises cleaning the semiconductor device using a water filter, and then cleaning the semiconductor device with running pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18598288A JPH0235727A (en) | 1988-07-26 | 1988-07-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18598288A JPH0235727A (en) | 1988-07-26 | 1988-07-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0235727A true JPH0235727A (en) | 1990-02-06 |
Family
ID=16180289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18598288A Pending JPH0235727A (en) | 1988-07-26 | 1988-07-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0235727A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6156292A (en) * | 1991-09-17 | 2000-12-05 | Sonus Pharmaceuticals, Inc. | Gaseous ultrasound contrast media and method for selecting gases for use as ultrasound contrast media |
| US6875420B1 (en) | 1991-09-17 | 2005-04-05 | Amersham Health As | Method of ultrasound imaging |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270833A (en) * | 1985-05-25 | 1986-12-01 | New Japan Radio Co Ltd | Manufacture of semiconductor device |
| JPS6356921A (en) * | 1986-08-28 | 1988-03-11 | Tokyo Ohka Kogyo Co Ltd | Treating method of substrate |
-
1988
- 1988-07-26 JP JP18598288A patent/JPH0235727A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270833A (en) * | 1985-05-25 | 1986-12-01 | New Japan Radio Co Ltd | Manufacture of semiconductor device |
| JPS6356921A (en) * | 1986-08-28 | 1988-03-11 | Tokyo Ohka Kogyo Co Ltd | Treating method of substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6156292A (en) * | 1991-09-17 | 2000-12-05 | Sonus Pharmaceuticals, Inc. | Gaseous ultrasound contrast media and method for selecting gases for use as ultrasound contrast media |
| US6875420B1 (en) | 1991-09-17 | 2005-04-05 | Amersham Health As | Method of ultrasound imaging |
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