JPH02203353A - Charge holding medium having protective film - Google Patents
Charge holding medium having protective filmInfo
- Publication number
- JPH02203353A JPH02203353A JP1067243A JP6724389A JPH02203353A JP H02203353 A JPH02203353 A JP H02203353A JP 1067243 A JP1067243 A JP 1067243A JP 6724389 A JP6724389 A JP 6724389A JP H02203353 A JPH02203353 A JP H02203353A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- charge retention
- protective film
- layer
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 54
- 230000014759 maintenance of location Effects 0.000 claims description 125
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 239000002985 plastic film Substances 0.000 claims description 6
- 229920006255 plastic film Polymers 0.000 claims description 5
- 238000010030 laminating Methods 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 99
- 238000000034 method Methods 0.000 description 29
- 229920005989 resin Polymers 0.000 description 27
- 239000011347 resin Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 23
- -1 Silver halide Chemical class 0.000 description 20
- 108091008695 photoreceptors Proteins 0.000 description 19
- 238000003860 storage Methods 0.000 description 14
- 229920002545 silicone oil Polymers 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 6
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 6
- 229920006267 polyester film Polymers 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000013032 Hydrocarbon resin Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920006270 hydrocarbon resin Polymers 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001748 polybutylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- YLBSSCSMPJBXRD-UHFFFAOYSA-N (4-hydroxycyclohexyl) prop-2-enoate Chemical compound OC1CCC(OC(=O)C=C)CC1 YLBSSCSMPJBXRD-UHFFFAOYSA-N 0.000 description 1
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical compound C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 description 1
- QRIMLDXJAPZHJE-UHFFFAOYSA-N 2,3-dihydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CO QRIMLDXJAPZHJE-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- IEVADDDOVGMCSI-UHFFFAOYSA-N 2-hydroxybutyl 2-methylprop-2-enoate Chemical compound CCC(O)COC(=O)C(C)=C IEVADDDOVGMCSI-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- GNSFRPWPOGYVLO-UHFFFAOYSA-N 3-hydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCO GNSFRPWPOGYVLO-UHFFFAOYSA-N 0.000 description 1
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 description 1
- JRJNSEMUYTUGLA-UHFFFAOYSA-N 3-phenoxypropyl prop-2-enoate Chemical compound C=CC(=O)OCCCOC1=CC=CC=C1 JRJNSEMUYTUGLA-UHFFFAOYSA-N 0.000 description 1
- NDWUBGAGUCISDV-UHFFFAOYSA-N 4-hydroxybutyl prop-2-enoate Chemical compound OCCCCOC(=O)C=C NDWUBGAGUCISDV-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical group [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229920001893 acrylonitrile styrene Polymers 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
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- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- MPFUOCVWJGGDQN-UHFFFAOYSA-N butan-1-ol;1,2-xylene Chemical compound CCCCO.CC1=CC=CC=C1C MPFUOCVWJGGDQN-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 239000000839 emulsion Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 229920006228 ethylene acrylate copolymer Polymers 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
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- 150000004665 fatty acids Chemical class 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
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- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
- 150000003097 polyterpenes Chemical class 0.000 description 1
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- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
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- 230000003595 spectral effect Effects 0.000 description 1
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- 239000011593 sulfur Substances 0.000 description 1
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
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Landscapes
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電圧印加時露光方法等により情報を静電的に
記録し、任意時点で情報再生を行うことができる電荷保
持媒体に関し、特に電荷保持特性に優れた電荷保持媒体
に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a charge-retaining medium that can electrostatically record information using an exposure method when voltage is applied, etc., and that can reproduce information at any time. The present invention relates to a charge retention medium with excellent charge retention properties.
(従来の技術〕
従来、高感度撮影技術として銀塩写真法が知られている
。この写真法においては、1最影像は現像工程を経て、
記録媒体としてのフィルム等に記録され、画像を再現す
る場合には銀塩乳剤(印画紙等)を用いるか、または現
像フィルムを光学走査して陰極線管(以下CRT)に再
現させる等により行われている。(Prior art) Silver halide photography is conventionally known as a high-sensitivity photographing technique.In this photography method, one most visible image is produced through a developing process.
Images are recorded on film, etc. as a recording medium, and are reproduced by using silver salt emulsion (photographic paper, etc.) or by optically scanning a developed film and reproducing it on a cathode ray tube (hereinafter referred to as CRT). ing.
また、光導電層に電極を蒸着し、暗所で光導電層上にコ
ロナ帯電により全面帯電させ、次いで強い光で露光して
光の当たった部位の光導電層を導電性にし、その部位の
電荷をリークさせて除去することにより静電荷潜像を光
導電層の面上に光学的に形成させ、その残留静電荷と逆
橿性の電荷(または同鴇性の電荷)を有するトナーを行
者させて、祇等に静電転写して現像する電子写真技術が
あるが、これは主として複写用に用いられておリ、一般
に低感度のため撮影用としては使用できず、記録媒体と
しての光伝導層における静電荷の保持時間が短いために
静電潜像形成後、直ちにトナー現像するのが普通である
。In addition, electrodes are deposited on the photoconductive layer, the entire surface of the photoconductive layer is charged by corona charging in a dark place, and then exposed to strong light to make the photoconductive layer conductive in the areas exposed to the light. By leaking and removing the charge, an electrostatic latent image is optically formed on the surface of the photoconductive layer, and the toner having a charge opposite to that of the residual electrostatic charge (or a charge having the same polarity) is removed by the operator. In addition, there is an electrophotographic technology that involves electrostatic transfer and development, but this is mainly used for copying and cannot be used for photography due to its low sensitivity; Since the electrostatic charge retention time in the conductive layer is short, toner development is usually carried out immediately after the electrostatic latent image is formed.
銀塩写真法は被写体像を保存する手段として優れている
が、銀塩像を形成させるために現像工程を必要とし、像
再現においてはハードコピー、ソフトコピー(CRT出
力)等に至る複雑な光学的、電気的、または化学的処理
が必要である。Silver halide photography is an excellent means of preserving images of subjects, but it requires a developing process to form silver halide images, and image reproduction involves complex optical processes such as hard copy and soft copy (CRT output). physical, electrical, or chemical treatment is required.
電子写真技術は、得られた静電潜像の顕像化は銀塩写真
法よりも簡単、迅速であるが潜像保存は極めて短く、現
像剤の解雇性、画質等は銀塩に劣る。In electrophotographic technology, visualization of the obtained electrostatic latent image is easier and faster than in silver salt photography, but the storage time of the latent image is extremely short, and developer release properties, image quality, etc. are inferior to silver salt.
TV撮影技術は撮像管で得られた電気的像信号を取り出
し、また記録するためには線順次走査が必要となる。線
順次走査は撮像管内では電子ビームで、ビデオ記録では
磁気ヘッドで行うが、解像性は走査線数に依存するため
、銀塩写真のような面状アナログ記録に比して著しく劣
化する。TV photographing technology requires line-sequential scanning in order to extract and record electrical image signals obtained by an image pickup tube. Line-sequential scanning is performed using an electron beam in the image pickup tube and a magnetic head for video recording, but since resolution depends on the number of scanning lines, it is significantly degraded compared to planar analog recording such as silver halide photography.
また、近年発達しつつある固体撮像素子(CCD等)を
利用したTV撮像系も解像性に関しては本質的に同様で
ある。Furthermore, TV imaging systems using solid-state imaging devices (CCDs, etc.), which have been developing in recent years, are essentially the same in terms of resolution.
これらの技術の内蔵する問題点は画像記録が高品質、高
解像であれば処理工程が複雑であり、工程が簡便であれ
ば記憶機能の欠如、あるいは画質の基本的劣化等があっ
た。Problems inherent in these technologies include a complicated processing process if the image recording is of high quality and high resolution, and a lack of storage function or basic deterioration of image quality if the process is simple.
本発明は上記問題点を解決するためのもので、高品質、
高解像であると共に、処理工程が簡便で、長時間の記憶
が可能で、記憶した文字、線画、画像、コード、(1,
0)情報を目的に応した画質で任意に反復再生すること
ができる電荷保持媒体における電荷保持特性の改良を課
題とする。The present invention is intended to solve the above problems, and has high quality,
In addition to high resolution, the processing process is simple and long-term storage is possible.Memorized characters, line drawings, images, codes, (1,
0) The objective is to improve the charge retention characteristics of a charge retention medium that can arbitrarily and repeatedly reproduce information with an image quality suitable for the purpose.
そのために本発明の電荷保持媒体は、電極層と電荷保持
層とからなる電荷保持媒体において、電荷保持層上に保
護膜を積層して電荷保持特性を向上させたことを特徴と
する特に保護膜が絶縁性プラスチックフィルムであるか
、又は絶縁性プラスチック溶液をコーティングすること
により形成されるか、更に絶縁性溶融プラスチックを溶
融転写により形成されることを特徴とするものである。For this purpose, the charge retention medium of the present invention is a charge retention medium consisting of an electrode layer and a charge retention layer, and is characterized in that a protective film is laminated on the charge retention layer to improve charge retention properties. is an insulating plastic film, or is formed by coating an insulating plastic solution, or is further formed by melt-transferring an insulating molten plastic.
以下、本発明の電荷保持媒体を説明する。The charge retention medium of the present invention will be explained below.
第1図は本発明の電荷保持媒体の各態様を、断面図又は
斜視図で説明するための図であり、第1図(イ)は実施
例を示すもの、第1図(ロ)は他の実施例を示すもの、
第1図(ハ)は第1図(ロ)に示す他の実施例の斜視図
、図中2はスペーサー、3は電荷保持媒体、11は電荷
保持層、13は電荷保持媒体電極、15は電荷保持層支
持体、20は保護膜である。FIG. 1 is a diagram for explaining each aspect of the charge retention medium of the present invention using a cross-sectional view or a perspective view. FIG. 1 (A) shows an example, and FIG. illustrating an example of
FIG. 1(C) is a perspective view of another embodiment shown in FIG. 1(B), in which 2 is a spacer, 3 is a charge retention medium, 11 is a charge retention layer, 13 is a charge retention medium electrode, and 15 is a charge retention medium electrode. The charge retention layer support 20 is a protective film.
電荷保持層11は電荷の移動を抑えるため高絶縁性の高
分子材料からなるものであり、比抵抗で1014Ω・c
m以上の絶縁性を有することが要求される。また電荷保
持層を構成する高分子材料としてはそのガラス転移温度
が使用環境温度以上であることが必要である。The charge retention layer 11 is made of a highly insulating polymer material in order to suppress the movement of charges, and has a specific resistance of 1014 Ω·c.
It is required to have an insulation property of m or more. Furthermore, it is necessary that the glass transition temperature of the polymeric material constituting the charge retention layer be higher than the operating environment temperature.
このような高分子材料は、熱可塑性樹脂、或いは熱硬化
性樹脂、紫外線硬化性樹脂、電子線硬化性樹脂等のエネ
ルギー線硬化樹脂、或いはエンジニアリングプラスチッ
ク等を使用することができる。As such a polymer material, a thermoplastic resin, a thermosetting resin, an energy beam curing resin such as an ultraviolet curing resin, an electron beam curing resin, or an engineering plastic can be used.
熱可塑性樹脂としては、例えばポリエチレン、塩化ビニ
ル樹脂、ポリプロピレン、スチレン樹脂、ABS樹脂、
ポリビニルアルコール、アクリル樹脂、アクリロニトリ
ル−スチレン系樹脂、塩化ビニリデン樹脂、AAS (
ASA)樹脂、ABS樹脂、繊維素誘導体樹脂、熱可塑
性ポリウレタン、ポリビニルブチラール、ポリ−4−メ
チルペンテン−1,ポリブテン−1、ロジンエステル樹
脂等、更に弗素樹脂、例えばポリテトラフルオロエチレ
ン、弗素化エチレンプロピレン、テトラフルオロエチレ
ン−パーフルオロアルキルビニルエーテル共重合体、ま
たそれらのディスバージョンタイプ、または変性タイプ
(コーティングタイプ)、またポリエーテルエーテルケ
トン樹脂、ポリパラキシリレンの下記構造式で示される
もの、
(尚、上記Cタイプは上記構造のもののみでなく、ベン
ゼン環における主鎖結合部位以外の部位の内1つが塩素
で置換されているもの、またDタイプはその2つが塩素
で置換されているものであればよい、)等、
また熱硬化性樹脂としては、例えば不飽和ポリエステル
樹脂、エポキシ樹脂、フェノール樹脂、ユリア樹脂、メ
ラミン樹脂、ジアリルフタレート樹脂、シリコーン樹脂
等、
更に紫外線硬化性樹脂、電子線硬化性樹脂等のエネルギ
ー線硬化樹脂としては、ラジカル重合性アクリレート系
化合物があり、例えばアクリル酸又はメタアクリル酸若
しくはこれらの誘導体のエステル化合物であって、両末
端に水酸基を有するものであり、具体的にはヒドロキシ
エチルアクリレート、ヒドロキシプロピルアクリレート
、ヒドロキシブチルアクリレート、ヒドロキシエチルメ
タアクリレート、ヒドロキシプロピルメタアクリレート
、ヒドロキシブチルメタアクリレート、4−ヒドロキシ
シクロへキシルアクリレート、5−ヒドロキシンクロオ
クチルアクリレート、2−ヒドロキシ−3−フェニルオ
キシプロピルアクリレート等の重合性不飽和基1個有す
る(メタ)アクリル酸エステル化合物を始め、式
%式%
で示される重合性不飽和基2個を有する化合物等を使用
することができる。Examples of thermoplastic resins include polyethylene, vinyl chloride resin, polypropylene, styrene resin, ABS resin,
Polyvinyl alcohol, acrylic resin, acrylonitrile-styrene resin, vinylidene chloride resin, AAS (
ASA) resin, ABS resin, cellulose derivative resin, thermoplastic polyurethane, polyvinyl butyral, poly-4-methylpentene-1, polybutene-1, rosin ester resin, etc., and fluororesins such as polytetrafluoroethylene, fluorinated ethylene Propylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymers, their dispersion types or modified types (coating types), polyether ether ketone resins, polyparaxylylene shown by the following structural formula, ( In addition, the above C type is not limited to those with the above structure, but also those in which one of the sites other than the main chain binding site in the benzene ring is substituted with chlorine, and the D type is in which two of the sites are substituted with chlorine. ), etc. Thermosetting resins include unsaturated polyester resins, epoxy resins, phenol resins, urea resins, melamine resins, diallyl phthalate resins, silicone resins, etc., as well as ultraviolet curable resins and electron beams. Energy ray-curable resins such as curable resins include radically polymerizable acrylate compounds, such as ester compounds of acrylic acid or methacrylic acid or derivatives thereof, which have hydroxyl groups at both ends. Specifically, hydroxyethyl acrylate, hydroxypropyl acrylate, hydroxybutyl acrylate, hydroxyethyl methacrylate, hydroxypropyl methacrylate, hydroxybutyl methacrylate, 4-hydroxycyclohexyl acrylate, 5-hydroxychlorooctyl acrylate, 2-hydroxy-3 In addition to (meth)acrylic acid ester compounds having one polymerizable unsaturated group such as phenyloxypropyl acrylate, compounds having two polymerizable unsaturated groups represented by the formula % can be used.
2個の水酸基と1個又は2個以上のラジカル重合性不飽
和基を有する硬化性化合物としては、例えばグリセロー
ルメタアクリレートや下記一般弐(但しR,R’ はメ
チル基、または水素であり、R1はエチレングリコール
、プロピレングリコール、ジエチレングリコール、ブタ
ンジオール、1゜6−ヘキサンジオール等の短鎖ジオー
ル残基である。)により示されるアクリレート類を使用
することができる。Examples of the curable compound having two hydroxyl groups and one or more radically polymerizable unsaturated groups include glycerol methacrylate and the following general 2 (where R and R' are methyl groups or hydrogen, and R1 is a short chain diol residue such as ethylene glycol, propylene glycol, diethylene glycol, butanediol, 1°6-hexanediol, etc.) can be used.
またエンジニアリングプラスチックとしてはポリカーボ
ネート、ポリアミド、アセタール樹脂、ポリフェニレン
オキシド、ポリブチレンチレフクレート、ポリエチレン
テレフタレート、ポリエチレンナフタレート、ポリフェ
ニレンサルファイド、ポリイミド樹脂、ポリスルフォン
、芳香族ポリエステル、ポリアクリレート等が使用でき
る。Further, as engineering plastics, polycarbonate, polyamide, acetal resin, polyphenylene oxide, polybutylene lentilphrate, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide, polyimide resin, polysulfone, aromatic polyester, polyacrylate, etc. can be used.
電荷保持層の積層方法としては、まず第1図(a)に示
す電荷保持媒体の場合には電極上に樹脂、ゴム類を蒸着
、スパック法等により、または)蓄剤に溶解させてコー
ティング、ディッピングすることにより層形成すること
ができる。In the case of the charge-retaining medium shown in FIG. 1(a), the charge-retaining layer is first coated with a resin or rubber on the electrode by vapor deposition, spuck method, etc., or) by dissolving it in a storage agent. Layers can be formed by dipping.
また電荷保持IJ11として、ラングミュア−・プロシ
ェド法により形成される単分子膜、または単分子累積膜
も使用することができる。Further, as the charge retention IJ11, a monomolecular film or a monomolecular cumulative film formed by the Langmuir-Proschede method can also be used.
更に電荷保持層11としてはシリコンフィルム、ポリエ
ステルフィルム、ポリイミドフィルム、含弗素ポリマー
フィルム、ポリエチレンフィルム、ポリプロピレンフィ
ルム、ポリパラバン酸フィルム、ポリカーボネートフィ
ルム、ポリアミドフィルム等を接着剤等を介して貼着す
ることにより層形成させてもよい。Further, as the charge retention layer 11, a layer such as a silicone film, a polyester film, a polyimide film, a fluorine-containing polymer film, a polyethylene film, a polypropylene film, a polyparabanic acid film, a polycarbonate film, a polyamide film, etc. is attached via an adhesive or the like. It may be formed.
或いはフィルムの片面に蒸着、スパッタ、又はコーティ
ング等により電極を形成させてもよい。Alternatively, an electrode may be formed on one side of the film by vapor deposition, sputtering, coating, or the like.
更にその上に電極を保護するための層をもうけてもよく
、更に機械的強度を必要とする場合には、より機械強度
を有するフィルム等と貼り合わせてもよい。Furthermore, a layer for protecting the electrode may be provided thereon, and if further mechanical strength is required, a film or the like having higher mechanical strength may be attached.
またこれら絶縁性を有する高分子材料中に電荷蓄積のた
めに光導電性、又は導電性微粒子を存在させてもよい。Further, photoconductive or conductive fine particles may be present in these insulating polymer materials for charge accumulation.
光導電性微粒子材料としてはアモルファスシリコン、結
晶シリコン、アモルファスセレン、結晶セレン、硫化カ
ドミウム、酸化亜鉛等の無機系光IN材料、またポリビ
ニルカルバゾール、フタロシアニン、アゾ系顔料等の有
機系光導電材料が使用される。As photoconductive fine particle materials, inorganic photo-IN materials such as amorphous silicon, crystalline silicon, amorphous selenium, crystalline selenium, cadmium sulfide, and zinc oxide, and organic photoconductive materials such as polyvinyl carbazole, phthalocyanine, and azo pigments are used. be done.
また導電性材料としては、周期律表第1A族(アルカリ
金属)、同IB族(銅族)、同11A族(アルカリ土類
金属)、同IlB族(亜鉛族)、同IIIA族(アルミ
ニウム族)、同IIIB族(布上類)、同TVB族(チ
タン族)、同VB族(バナジウム族)、同VIB族(ク
ロム族)、同■B族(マンガン族)、同■族(鉄族、白
金族)、また同IVA族(炭素族)としては炭素、珪素
、ゲルマニウム、錫、鉛、同VA族(窒素族)としては
アンチモン、ビスマス、同VIA族(酸素族)としては
硫黄、セレン、テルルが微細粉状で使用される。また上
記元素単体のうち金属類は金属イオン、微細粉状の合金
、有機金属、錯体の形態としても使用することができる
。更に上記元素単体は酸化物、燐酸化物、硫酸化物、ハ
ロゲン化物の形態で使用することができる。特に炭素、
金、銅、アルミニウム等が好ましく使用される。Conductive materials include Group 1A (alkali metals), Group IB (copper group), Group 11A (alkaline earth metals), Group IIB (zinc group), and Group IIIA (aluminum group) of the periodic table. ), Group IIIB (fabric group), Group TVB (titanium group), Group VB (vanadium group), Group VIB (chromium group), Group ■B (manganese group), Group ■ (iron group). The IVA group (carbon group) includes carbon, silicon, germanium, tin, and lead; the VA group (nitrogen group) includes antimony and bismuth; the VIA group (oxygen group) includes sulfur and selenium. , tellurium is used in fine powder form. Further, among the above elements, metals can be used in the form of metal ions, fine powder alloys, organic metals, and complexes. Furthermore, the above elements can be used in the form of oxides, phosphorus oxides, sulfides, and halides. Especially carbon,
Gold, copper, aluminum, etc. are preferably used.
この微粒子層はその形成材料を電極上、又は電荷保持層
上に低圧蒸着装置を使用して蒸着させることにより形成
される。粒子層形成材料は、10TOrr〜10−’T
orr程度の低圧下で蒸発させると凝集し、10〜0゜
1μm径程度の超微粒子状態となり、電権又は電荷保持
層表面に積層されるものである。This fine particle layer is formed by vapor depositing its forming material onto the electrode or the charge retention layer using a low pressure vapor deposition apparatus. The particle layer forming material is 10 TOrr to 10-'T
When it is evaporated under a low pressure of about 100.degree.
またコーティングにらり電荷保持層を形成させる場合は
、電荷保持層形成材料溶液中に微粒子+A料を分散させ
、電荷保持層上にコーティングすることにより形成して
もよい。Further, when a charge retention layer is formed by coating, it may be formed by dispersing fine particles + material A in a charge retention layer forming material solution and coating the mixture on the charge retention layer.
またこれら電荷保持層11には、電極面との間、または
電荷保持層11上に電荷保持強化層を設けることができ
る。電荷保持強化層とは、強電界(10’V/cm以上
)が印加された時には電荷が注入するが、低電界(10
’V/cm以下)では電荷が注入しない層のことをいう
。電荷保持強化層としては、例えばSiO□、A1□0
3 、SiC、、SiN等が使用でき、有機系物質とし
ては例えばポリエチレン蒸着膜、ポリバラキシレン蒸着
膜が使用できる。Further, a charge retention reinforcing layer can be provided between the charge retention layer 11 and the electrode surface or on the charge retention layer 11. A charge retention enhancement layer is a layer in which charge is injected when a strong electric field (10'V/cm or more) is applied, but when a low electric field (10'V/cm or more) is applied, charge is injected.
'V/cm or less) refers to a layer in which no charge is injected. As the charge retention reinforcing layer, for example, SiO□, A1□0
3, SiC, SiN, etc. can be used, and as the organic material, for example, a polyethylene vapor deposited film or a polyvaraxylene vapor deposited film can be used.
また静電荷をより安定に保持させるために、電荷保持層
11に、電子供与性を有する物質(ドナー材料)、ある
いは電子受容性を有する物質(アクセプター材料)を添
加するとよい。ドナー材料としてはスチレン系、ピレン
系、ナフタレン系、アントラセン系、ピリジン系、アジ
ン系化合物があり、具体的にはテトラチオフルバレン(
TTF)、ポリビニルピリジン、ポリビニルナフタレン
、ポリビニルアントラセン、ボリアジン、ポリビニルピ
レン、ポリスチレン等が使用され、−1ffi、または
混合して用いられる。またアクセプター材料としてはハ
ロゲン化合物、シアン化合物、ニトロ化合物等があり、
具体的にはテトラシアノキノジメタン(TCNQ)
トリニトロフルオレノン(TNF)等が使用され、一種
、または混合して使用される。ドナー材料、アクセプタ
ー材料は、樹脂等に対して0.001〜10%程度添加
して使用される。Further, in order to more stably hold static charges, it is preferable to add a substance having electron donating properties (donor material) or a substance having electron accepting properties (acceptor material) to the charge retention layer 11. Donor materials include styrene, pyrene, naphthalene, anthracene, pyridine, and azine compounds, specifically tetrathiofulvalene (
TTF), polyvinylpyridine, polyvinylnaphthalene, polyvinylanthracene, polyazine, polyvinylpyrene, polystyrene, etc. are used, and -1ffi or a mixture thereof is used. In addition, acceptor materials include halogen compounds, cyanide compounds, nitro compounds, etc.
Specifically, tetracyanoquinodimethane (TCNQ)
Trinitrofluorenone (TNF) and the like are used alone or in combination. The donor material and acceptor material are used by adding about 0.001 to 10% to the resin and the like.
電荷保持層11は、絶縁性の点からは少なくても100
0人(0,1μm)以上の厚みが必要であり、フレキシ
ビル性の点からは1100IJ以下が好ましい。From the viewpoint of insulation, the charge retention layer 11 has a thickness of at least 100%.
A thickness of 0.1 μm or more is required, and from the viewpoint of flexibility, a thickness of 1100 IJ or less is preferable.
本発明の電荷保持媒体は、情報記録後、電荷保持媒体表
面の破損、また情報電荷の減衰を防止するために電荷保
持媒体表面に保護膜を積層することを特徴とする。The charge holding medium of the present invention is characterized in that a protective film is laminated on the surface of the charge holding medium to prevent damage to the surface of the charge holding medium and attenuation of information charges after information is recorded.
保護膜としてはまず、情報再生時に!、11離して読み
取るために粘着性を有する再生ゴム、スチレン−ブタジ
ェンゴム、ポリイソプレン、ブチルゴム、ブナ−N(ブ
タジェン・アクリロニトリルゴム)、ポリビニルエーテ
ル(エチル基、又はそれ以上の炭化水素基をアルコール
残基として有するもの)、ポリアクリレートエステル(
エチル基、又はそれ以上の炭化水素基を有するもの)、
シリコンゴム、ポリテルペン樹脂、ガムロジン、ロジン
エステル、及びロジン誘導体、油溶性フェノール樹脂、
クマロン・インデン樹脂、石油系炭化水素樹脂の1種、
若しくは2種以上混合したものを、膜厚数百人〜数十μ
mのフィルム状にし、電荷保持媒体表面に貼着すること
により形成されるもの、また絶縁性プラスチックフィル
ムを剥離可能な密着剤を使用して貼着してもよく、密着
剤としては比抵抗1014Ω・cm以上のシリコンオイ
ル、ジメチルシリコンオイル、メチルフェニル7リコン
オイル、高級脂肪酸変性シリコンオイル、メチル塩素化
フェニルシリコンオイル、アルキル変性シリコンオイル
、メチルハイドロジエンシリコンオイル、環状ポリジメ
チルシロキサン、シリコンポリエーテル共重合体、アミ
ノ変性シリコンオイル、エポキシ変性シリコンオイル、
絶縁性油等を1種、又は2種以上混合して使用するとよ
い。As a protective film, first of all, when reproducing information! , 11 Recycled rubber with tack to read away, styrene-butadiene rubber, polyisoprene, butyl rubber, Buna-N (butadiene-acrylonitrile rubber), polyvinyl ether (ethyl group or higher hydrocarbon group with alcohol residue) ), polyacrylate ester (
(having an ethyl group or more hydrocarbon group),
Silicone rubber, polyterpene resin, gum rosin, rosin ester, and rosin derivatives, oil-soluble phenolic resin,
Coumaron/indene resin, a type of petroleum-based hydrocarbon resin,
Or a mixture of two or more types with a film thickness of several hundred to several tens of microns.
It can be formed by forming a film of m and sticking it on the surface of a charge holding medium, or it can be formed by sticking an insulating plastic film using a removable adhesive, and the adhesive has a specific resistance of 1014Ω.・Silicone oil of cm or more, dimethyl silicone oil, methylphenyl 7 recon oil, higher fatty acid modified silicone oil, methyl chlorinated phenyl silicone oil, alkyl modified silicone oil, methylhydrogen silicone oil, cyclic polydimethylsiloxane, silicone polyether Polymer, amino-modified silicone oil, epoxy-modified silicone oil,
It is preferable to use one type of insulating oil or a mixture of two or more types.
また絶縁性プラスチックフィルムを接着剤を使用して電
荷保持層上に積層してもよい。Alternatively, an insulating plastic film may be laminated onto the charge retention layer using an adhesive.
また絶縁性プラスチックを溶剤に溶解し、乾燥時P14
′fg−数百人〜数十μmになるように蒸着法、スピン
ナーコーティング法等により塗布し形成してもよい。In addition, insulating plastic is dissolved in a solvent, and when dry, P14
It may be formed by coating by a vapor deposition method, a spinner coating method, etc. to a thickness of several hundred to several tens of micrometers.
また溶融転写材料としては、EVA (エチレン−酢酸
ビニル共重合体)、EEA(エチレン−エチレンアクリ
レート共重合体)、ポリアミド樹脂、ロジン系樹脂、水
添石油樹脂、ピネン系樹脂、炭化水素系樹脂、合成ロジ
ン系樹脂、テルペン系樹脂、ワックス等が使用でき、必
要に応じて二種以上の上記材料を混合するか、或いは無
機質粉末を加えてもよい。更に電荷保持層上の電荷が加
熱により減衰しない程度の温度で保護層を溶融転写がで
きる材料が好ましい。Melt transfer materials include EVA (ethylene-vinyl acetate copolymer), EEA (ethylene-ethylene acrylate copolymer), polyamide resin, rosin resin, hydrogenated petroleum resin, pinene resin, hydrocarbon resin, Synthetic rosin resins, terpene resins, waxes, etc. can be used, and if necessary, two or more of the above materials may be mixed, or inorganic powder may be added. Furthermore, it is preferable to use a material that allows the protective layer to be melt-transferred at a temperature that does not attenuate the charges on the charge retention layer due to heating.
情報読み取りは保護膜上から可能であり、読み取りの解
像度を向上させるためには保護膜の膜厚は薄い方が好ま
しい。これは解像度よく読み取るためには読み取りのた
めのセンサをより電荷が蓄積されている部位に近づける
方がよいためである。Information can be read from above the protective film, and in order to improve the resolution of reading, it is preferable that the protective film be thin. This is because in order to read with high resolution, it is better to place the reading sensor closer to the area where electric charge is accumulated.
読み取りの解像度を問題にしない場合には保護膜は厚く
でもかまわない。If reading resolution is not an issue, the protective film may be thick.
また保護膜を上述のような粘着タイプとすれば、その保
護膜を剥離して電荷保持層表面の情報を再生してもよい
。Further, if the protective film is of the adhesive type as described above, the information on the surface of the charge retention layer may be reproduced by peeling off the protective film.
また第1図(ロ)に示すように非接触の状態で保護膜2
0を積層してもよい。この場合には保護膜としてプラス
チックフィルムを使用し、電荷保持Jillにスペーサ
ー2を介して積層するとよい。In addition, as shown in Figure 1 (b), the protective film 2 is placed in a non-contact state.
0 may be stacked. In this case, it is preferable to use a plastic film as a protective film and to laminate it on the charge-retaining Jill with a spacer 2 interposed therebetween.
電荷保持層と保護膜の間隔は1〜50μmが適当であり
、またスペーサー2は、プラスチック等の有機材を使用
するとよく、この場合記録した情報を再生するには保護
膜20を電荷保持層11から剥離し、電荷保持層11上
の情報電荷を読み取るとよく、スペーサー2と電荷保持
層11の接着は、剥離可能に接着される必要があり、上
記シリコンオイル等の密着剤を使用して密着させるとよ
い。The appropriate distance between the charge retention layer and the protective film is 1 to 50 μm, and the spacer 2 is preferably made of an organic material such as plastic. The spacer 2 and the charge retention layer 11 should be peeled off from each other and the information charge on the charge retention layer 11 can be read.The spacer 2 and the charge retention layer 11 must be adhesively bonded in a removable manner. It's good to let them do it.
電荷保持媒体電極13は、電荷保持層支持体に金属のも
のが使用される場合を除いて電荷保持層支持体上に形成
され、その材質は比抵抗値が106Ω・cm以下であれ
ば限定されなく、金属導電膜、無機金属酸化物導電膜、
四級アンモニウム塩等の有機導電膜である。このような
電荷保持層電極はその支持体上に蒸着、スパッタ法、C
VD法、コーティング、メツキ、ディッピング、電解重
合等により形成される。またその厚みは電荷保持層電極
を構成する材質の電気特性、及び情報の記録の際の印加
電圧により変化させる必要があるが、例えばアルミニウ
ムであれば100〜3000人程度である。電荷保持層
電極は情報光を入射させる必要がある場合には支持体同
様の光学的特性が要求され、例えば情報光が可視光(4
00〜700Ωm)であれば、l ’p O([nzO
)−5now) 、また酸化錫等をスパッタリング、蒸
着させるか、またはこれらの微粉末をバインダーと共に
インキ化してコーティングしたような透明電極や、金、
アルミニウム、銀、ニッケル、クロム等を蒸着、または
スパッタリングすることにより作製される半透明電極、
テトラシアノキノジメタン(TCN口)、ポリアセチレ
ン等のコーティングによる有機透明電極等が使用される
。The charge retention medium electrode 13 is formed on the charge retention layer support unless a metal is used for the charge retention layer support, and the material thereof is limited as long as the specific resistance value is 106 Ω·cm or less. Metal conductive film, inorganic metal oxide conductive film,
It is an organic conductive film made of quaternary ammonium salt, etc. Such a charge retention layer electrode is formed by vapor deposition, sputtering, C
It is formed by VD method, coating, plating, dipping, electrolytic polymerization, etc. Further, the thickness needs to be changed depending on the electrical properties of the material constituting the charge retention layer electrode and the applied voltage when recording information; for example, in the case of aluminum, the thickness is about 100 to 3000. The charge retention layer electrode is required to have the same optical properties as the support when it is necessary to input information light; for example, if the information light is visible light (4
00 to 700 Ωm), then l'p O([nzO
)-5now), transparent electrodes made by sputtering or vapor-depositing tin oxide, or coating fine powders of these with a binder, gold,
Translucent electrodes made by vapor deposition or sputtering of aluminum, silver, nickel, chromium, etc.
Organic transparent electrodes coated with tetracyanoquinodimethane (TCN), polyacetylene, etc. are used.
また情報光が赤外光(700Ωm以上)の場合にも上記
電極材料を使用することができるが、場合によっては可
視光をカットするために着色された可視光吸収電極も使
用できる。The above electrode material can also be used when the information light is infrared light (700 Ωm or more), but in some cases, colored visible light absorbing electrodes can also be used to cut visible light.
更に情報光が紫外光(400n+i以下)の場合も、上
記電極材料を使用できるが、紫外光を吸収するような有
機高分子材料、ソーダガラス等は好ましくなく、石英ガ
ラスのような紫外光を透過する材料を使用するとよい。Furthermore, when the information light is ultraviolet light (400n+i or less), the above electrode materials can be used, but organic polymer materials that absorb ultraviolet light, soda glass, etc. are not preferred, and quartz glass that transmits ultraviolet light is not preferable. It is recommended to use materials that
電荷保持層支持体15は、電荷保持層を強度的に支持す
るものであるが、光透過性も同様に要求される場合があ
る。具体的には、電荷保持媒体3がフレキシブルなフィ
ルム、テープ、ディスク形状をとる場合には、フレキシ
ブル性のあるプラスチックフィルムが使用され、強度が
要求される場合には剛性のあるシート、ガラス等の無機
材料等が使用される。The charge retention layer support 15 supports the charge retention layer with strength, but may also be required to have light transmittance. Specifically, when the charge retention medium 3 takes the form of a flexible film, tape, or disk, a flexible plastic film is used, and when strength is required, a rigid sheet, glass, etc. is used. Inorganic materials etc. are used.
電荷保持媒体3は、感光体1と共に用いられて、電荷保
持媒体3を構成する電荷保持層11の表面、もしくはそ
の内部に情報を静電荷の分布として記録するものであり
、電荷保持媒体自体が記録媒体として使用されるもので
ある。従って記録される情報、あるいは記録の方法によ
りこの電荷保持媒体の形状は種々の形状をとることがで
きる。例えば静電カメラ(同一出願人による特願昭63
−121591号)に用いられる場合には、一般のフィ
ルム(単コマ、連続コマ用)形状、あるいはディスク状
となり、レーザー等によりデジタル情報、またはアナロ
グ情報を記録する場合には、テープ形状、ディスク形状
、あるいはカード形状となる。The charge retention medium 3 is used together with the photoconductor 1 to record information as a distribution of static charges on the surface or inside of the charge retention layer 11 that constitutes the charge retention medium 3, and the charge retention medium itself It is used as a recording medium. Therefore, the shape of this charge retention medium can take various shapes depending on the information to be recorded or the recording method. For example, an electrostatic camera (patent application filed in 1983 by the same applicant)
-121591), it is in the shape of a general film (single frame or continuous frame) or in the shape of a disk, and when recording digital information or analog information with a laser etc., it is in the shape of a tape or disk. , or in the form of a card.
次ぎにこの電荷保持媒体を使用した静電画像記録方法に
ついて、第2図により説明する。図中1は感光体、5は
光導電層支持体、7は感光体電極、9は光導電層、17
は電源である。Next, an electrostatic image recording method using this charge retention medium will be explained with reference to FIG. In the figure, 1 is a photoreceptor, 5 is a photoconductive layer support, 7 is a photoreceptor electrode, 9 is a photoconductive layer, 17
is the power source.
第2図においては、感光体1側から露光を行う態様であ
り、まず1胴厚のガラスからなる光導電層支持体5上に
1000人厚のIrOからなる透明な感光体電極7を形
成し、この上に10μm程度の光導電層9を形成して感
光体lを構成している。この感光体1に対して、10μ
m程度の空隙を介して電荷保持媒体3が配置される。電
荷保持媒体3はIM厚のガラスからなる電荷保持層支持
体15上に1000人厚のIr電極を蒸着し、この電極
上に10tIm厚の電荷保持層11を形成したものであ
る。In FIG. 2, exposure is performed from the side of the photoreceptor 1. First, a transparent photoreceptor electrode 7 made of IrO with a thickness of 1000 mm is formed on a photoconductive layer support 5 made of glass with a thickness of 1 body. A photoconductive layer 9 having a thickness of about 10 μm is formed thereon to constitute a photoreceptor l. For this photoreceptor 1, 10μ
The charge retention medium 3 is arranged with a gap of about m. The charge retention medium 3 was obtained by depositing an Ir electrode with a thickness of 1000 m on a charge retention layer support 15 made of glass with an IM thickness, and forming a charge retention layer 11 with a thickness of 10 tIm on this electrode.
まず、同図(イ)に示すように感光体1に対して、10
77m程度の空隙を介して電荷保持媒体3をセットし、
同図(ロ)に示すように電源17により電極7.13間
に電圧を印加する。暗所であれば光導電層9は高抵抗体
であるため、電極間には何の変化も生じない。感光体1
側より光が入射すると、光が入射した部分の光導電層9
は導電性を示し、電荷保持層11との間に放電が生じ、
電荷保持層11に電荷が蓄積される。First, as shown in the same figure (a), 10
Charge holding medium 3 is set through a gap of about 77 m,
As shown in FIG. 3B, a voltage is applied between the electrodes 7 and 13 by the power source 17. In a dark place, since the photoconductive layer 9 is a high-resistance material, no change occurs between the electrodes. Photoreceptor 1
When light enters from the side, the photoconductive layer 9 in the part where the light entered
exhibits conductivity, and a discharge occurs between it and the charge retention layer 11,
Charges are accumulated in the charge retention layer 11 .
露光が終了したら、同図(ハ)に示すように電圧をOF
Fにし、次いで同図(ニ)に示すように電荷保持媒体3
を取り出すことにより静電潜像の形成が終了する。When the exposure is completed, turn off the voltage as shown in the same figure (c).
F, and then charge retention medium 3 as shown in the same figure (d).
By taking out the electrostatic latent image, the formation of the electrostatic latent image is completed.
なお、感光体1と電荷保持媒体3とは上記のように非接
触でなく接触代でもよく、接触代の場合には、感光体電
極7側から光導電層9の露光部に正または負の電荷が注
入され、この電荷は電荷保持媒体3例の電極13に引か
れて光導TL層9を通過し、電荷保持層11簡に達した
所で電荷移動が停止し、その部位に注入電荷が蓄積され
る。そして、感光体1と電荷保持媒体3とを分離すると
、電荷保持層11は電荷を蓄積したままの状態で分離さ
れる。この記録方法は面状アナログ記録とした場合、銀
塩写真法と同様に高解像度が得られる。Note that the photoreceptor 1 and the charge holding medium 3 may be in contact rather than in non-contact as described above, and in the case of contact, a positive or negative charge is applied from the photoreceptor electrode 7 side to the exposed portion of the photoconductive layer 9. Charge is injected, this charge is attracted to the electrode 13 of the three charge retention media, passes through the light guide TL layer 9, and when it reaches the charge retention layer 11, the charge movement stops, and the injected charge is transferred to that part. Accumulated. Then, when the photoreceptor 1 and the charge retention medium 3 are separated, the charge retention layer 11 is separated with the charge stored therein. When this recording method is used as planar analog recording, high resolution can be obtained like silver salt photography.
このようにし′C画像が情報電荷として蓄積された電荷
保持層11の表面電荷は空気環境に曝されるが、本発明
はこの電荷保持層上に絶縁性保護膜を積層することによ
り情報電荷は明所、暗所に関係なく放電せず長期間保存
される。情報電荷は単に表面に蓄積させる場合もあり、
また微視的には絶縁体表面付近内部に侵入し、その物質
の構造内に電子またはホールがトラップされる場合もあ
るので長期間の保存が行われる。In this way, the surface charges of the charge retention layer 11 where the 'C image is accumulated as information charges are exposed to the air environment, but in the present invention, the information charges are removed by laminating an insulating protective film on the charge retention layer. It can be stored for a long time without discharging regardless of whether it is in the light or the dark. Information charges may simply accumulate on the surface;
In addition, microscopically, electrons or holes may penetrate into the interior near the surface of an insulator and become trapped within the structure of the material, resulting in long-term storage.
本発明の電荷保持媒体への情報人力方法としては、高解
像度静電カメラによる方法、またレーザーによる記録方
法がある。まず本願発明で使用される高解像度静電カメ
ラは、通常のカメラに使用されている写真フィルムの代
わりに、前面に感光体電極7を設けた光導電N9からな
る感光体1と、感光体1に対向し、後面に電荷保持媒体
電極13を設けた電荷保持層11からなる電荷保持媒体
とにより記録部材を構成し、画電極へ電圧を印加し、入
射光に応じて光導電層を導電性として入射光量に応じて
電荷保持層上に電荷を蓄積させることにより入射光学像
の静電潜像を電荷蓄積媒体上に形成するもので、機械的
なシャッタも使用しうるし、また電気的なシャッタも使
用しうるちのであり、また静電潜像は明所、暗所に関係
なく長期間保持することが可能である。またプリズムに
より光情報を、R,G、B光成分に分離し、平行光とし
て取り出すカラーフィルターを使用し、R,G、B分解
した電荷保持媒体3セントで1コマを形成するか、また
は1平面上にR,GSB像を並べて1セントで1コマと
することにより、カラー1最影することもできる。Manual methods for recording information on the charge retention medium of the present invention include a method using a high-resolution electrostatic camera and a recording method using a laser. First, the high-resolution electrostatic camera used in the present invention consists of a photoconductor 1 made of photoconductive N9 with a photoconductor electrode 7 provided on the front surface, instead of the photographic film used in ordinary cameras; A recording member is constituted by a charge retention medium consisting of a charge retention layer 11 which is opposed to the charge retention layer 11 and has a charge retention medium electrode 13 on the rear surface, and a voltage is applied to the picture electrode to make the photoconductive layer conductive in accordance with incident light. A latent electrostatic image of an incident optical image is formed on a charge storage medium by accumulating charges on a charge storage layer according to the amount of incident light.A mechanical shutter can also be used, and an electric shutter can also be used. Also, the electrostatic latent image can be retained for a long period of time regardless of bright or dark places. In addition, a prism separates the optical information into R, G, and B light components, and a color filter is used to extract them as parallel light, and one frame is formed with 3 cents of charge-retaining media separated into R, G, and B, or one By arranging R and GSB images on a plane and making one frame worth 1 cent, it is also possible to create a color 1 shadow.
またレーザーによる記録方法としては、光源としてはア
ルゴンレーザー(514,488nm)、ヘリウム−ネ
オンレーザ−(633nm)、半導体レーザー(780
nm、810nm等)が使用でき、感光体と電荷保持媒
体を面状で表面同志を、密着させるか、一定の間隔をお
いて対向させ、電圧印加する。この場合感光体のキャリ
アの極性と同じ極性に感光体電極をセットするとよい。For recording methods using lasers, the light sources include argon laser (514,488 nm), helium-neon laser (633 nm), and semiconductor laser (780 nm).
(nm, 810 nm, etc.), and a voltage is applied to the photoreceptor and the charge holding medium with their surfaces brought into close contact with each other or facing each other at a fixed interval. In this case, it is preferable to set the photoreceptor electrode to the same polarity as the carrier of the photoreceptor.
この状態で画像信号、文字信号、コード信号、線画信号
に対応したレーザー露光をスキャニングにより行うもの
である0画像のようなアナログ的な記録は、レーザーの
光強度を変調して行い、文字、コード、線画のようなデ
ジタル的な記録は、レーザー光の0N−OFF制御によ
り行う。また画像において網点形成されるものには、レ
ーザー光にドットジェ不し−クー〇N−0FF制御をか
けて形成するものである。尚、感光体における光導電1
gの分光特性は、パンクロマティックである必要はなく
、レーザー光源の波長に感度を有していればよい。In this state, laser exposure corresponding to image signals, character signals, code signals, and line drawing signals is performed by scanning. Analog recording such as 0 images is performed by modulating the light intensity of the laser, , Digital recording such as line drawings is performed by ON-OFF control of laser light. Halftone dots in the image are formed by subjecting the laser beam to dot-jet control. In addition, photoconductivity 1 in the photoreceptor
The spectral characteristics of g do not need to be panchromatic, but only need to be sensitive to the wavelength of the laser light source.
次ぎに記録された静電画像の再生方法について説明する
。Next, a method for reproducing a recorded electrostatic image will be explained.
第3図は本発明の電荷保持媒体の静電画像再生方法にお
ける電位読み取り方法の例を示す図で、第1図と同一番
号は同一内容を示している。なお、図中、10は保i膜
、21は電位読み取り部、23は検出電極、25はガー
ド電極、27はコンデンサ、29は電圧計である。FIG. 3 is a diagram showing an example of a potential reading method in the electrostatic image reproduction method of a charge holding medium of the present invention, and the same numbers as in FIG. 1 indicate the same contents. In the figure, 10 is an insulating film, 21 is a potential reading section, 23 is a detection electrode, 25 is a guard electrode, 27 is a capacitor, and 29 is a voltmeter.
電位読み取り部21を電荷保持媒体3の電荷蓄積面にそ
の保護膜上から対向させると、検出TI 4M23に電
荷保持媒体3の電荷保持層11上に蓄積された電荷によ
って生じる電界が作用し、検出電極面上に電荷保持媒体
上の電荷と等量の誘導電荷が生ずる。この誘導電荷と逆
極性の等量の電荷でコンデンサ27が充電されるので、
コンデンサの電極間に蓄積電荷に応じた電位差が生じ、
この値を電圧計29で読むことによって電荷保持体の電
位を求めることができる。そして、電位読み取り部21
で電荷保持媒体面上を走査することにより静電潜像を電
気信号として出力することができる。When the potential reading section 21 is placed to face the charge storage surface of the charge storage medium 3 from above its protective film, an electric field generated by the charges accumulated on the charge storage layer 11 of the charge storage medium 3 acts on the detection TI 4M23, and the detection An induced charge equal to the charge on the charge storage medium is generated on the electrode surface. Since the capacitor 27 is charged with an equal amount of charge of opposite polarity to this induced charge,
A potential difference occurs between the electrodes of the capacitor depending on the accumulated charge,
By reading this value with a voltmeter 29, the potential of the charge carrier can be determined. Then, the potential reading section 21
The electrostatic latent image can be output as an electric signal by scanning the surface of the charge holding medium with the .
なお、検出電極23だけでは電荷保持媒体の検出電極対
向部位よりも広い範囲の電荷による電界(電気力線)が
作用して分解能が落ちるので、検出電極の周囲に接地し
たガード電極25を配置するようにしてもよい。これに
よって、電気力線は面に対して垂直方向を向くようにな
るので、検出電極23に対向した部位のみの電気力線が
作用するようになり、検出電極面積に略等しい部位の電
位を読み取ることができる。電位読み取りの精度、分解
能は検出電極、ガード電極の形状、大きさ、及び電荷保
持媒体との間隔によって大きく変わるため、要求される
性能に合わせて最適条件を求めて設計する必要がある。Note that if only the detection electrode 23 is used, the electric field (electric line of force) due to charges in a wider area than the area of the charge holding medium that faces the detection electrode will act, reducing resolution, so a grounded guard electrode 25 is placed around the detection electrode. You can do it like this. As a result, the lines of electric force are oriented perpendicularly to the surface, so that the lines of electric force only act on the area facing the detection electrode 23, and the potential of the area approximately equal to the area of the detection electrode 23 is read. be able to. Since the accuracy and resolution of potential reading vary greatly depending on the shape and size of the detection electrode and guard electrode, and the distance between them and the charge retention medium, it is necessary to find and design optimal conditions according to the required performance.
第4図は静電画像再生方法の概略構成を示す図で、図中
、61は電位読み取り装置、63は増幅器、65はCR
T、67はプリンタである。FIG. 4 is a diagram showing a schematic configuration of an electrostatic image reproduction method, in which 61 is a potential reading device, 63 is an amplifier, and 65 is a CR
T, 67 is a printer.
図において、電位読み取り装置61で電荷電位を検出し
、検出出力を増幅器63で増幅してCRT65で表示し
、またプリンタ67でプリンI−アウトすることができ
る。この場合、任意の時に、読み取りたい部位を任意に
選択して出力させることができ、また反復再生すること
が可能である。In the figure, a potential reading device 61 detects the charge potential, and an amplifier 63 amplifies the detected output, which can be displayed on a CRT 65 and printed out using a printer 67. In this case, it is possible to arbitrarily select and output the part to be read at any time, and it is also possible to reproduce it repeatedly.
また電界により光学的性質が変化する材料、例えば電気
光学結晶等を用いて光学的に読み取ることもできる。ま
た静電潜像が電気信号として得られるので、必要に応じ
て他の記録媒体への記録等に利用することも可能である
。It is also possible to read optically using a material whose optical properties change depending on an electric field, such as an electro-optic crystal. Furthermore, since the electrostatic latent image is obtained as an electrical signal, it can also be used for recording on other recording media, etc., if necessary.
電荷保持媒体は、電荷保持層を電極基板上に積層するこ
とにより形成され、感光体電極上の光導電層面と対向さ
せ、両電極間に電圧を印加した状態で露光させると、情
報光の照射された光導電層部位において電荷保持媒体側
の電極方向への電荷の移動が生じ、電荷保持媒体表面に
その分極電荷が蓄積され、もしくは電荷保持層内部に浸
透して永続性のある電荷保持媒体となるものである。し
かしながら、電荷保持層の表面電荷は空気中の湿気等に
より徐々に減衰していく、また外部よりの損傷により破
壊されることがある。そのために本発明は、電荷保持層
表面を絶縁性被膜で積層して電荷を保護することにより
、電荷保存特性を向上させ、電荷保持媒体における像情
報を長期間保存させることを可能とじうるちのである。The charge retention medium is formed by laminating a charge retention layer on an electrode substrate, and when exposed to light while facing the photoconductive layer surface on the photoreceptor electrode and applying a voltage between both electrodes, information light is irradiated. Charges move toward the electrode on the charge-retaining medium side in the photoconductive layer, and the polarized charges are accumulated on the surface of the charge-retaining medium or penetrate into the charge-retaining layer, forming a permanent charge-retaining medium. This is the result. However, the surface charge of the charge retention layer gradually attenuates due to moisture in the air, etc., and may be destroyed by external damage. To this end, the present invention improves the charge storage characteristics by laminating the surface of the charge storage layer with an insulating film to protect the charges, thereby making it possible to preserve image information in the charge storage medium for a long period of time. be.
保護層を設けない場合には、電荷保持媒体の表、面を導
体で物理的な接触を行うと電荷が減少、或いは無くなっ
てしまうが、保護層を設けた場合は導体の物理的な接触
があっても表面電位は減少しない、また保護膜表面に摩
擦等により静電荷が発生しても、水等の導体により簡単
にクリーニングすることができるものである。情報の再
生にあたっては、この保護膜を剥離し、電荷保持層に蓄
積された情報電荷を再生してもいいが、保護膜上から再
生することもできる。これにより蓄積された情報は任意
の時点で、静電潜像の局部電位を任意の走査密度で読み
出し出力することができるものである。If a protective layer is not provided, the charge will decrease or disappear if the surface of the charge retention medium is physically contacted with a conductor, but if a protective layer is provided, the charge will be reduced or eliminated. Even if static charges are generated on the surface of the protective film due to friction, etc., the surface potential does not decrease, and even if static charges are generated on the surface of the protective film, they can be easily cleaned with a conductor such as water. To reproduce information, this protective film may be peeled off and the information charges accumulated in the charge retention layer may be reproduced, but it is also possible to reproduce them from above the protective film. The information thus accumulated allows the local potential of the electrostatic latent image to be read out and output at any scanning density at any time.
以下、実施例を説明する。Examples will be described below.
〔実施例1〕
(電荷保持媒体の作製方法)
メチルフェニルシリコン樹脂10g、キシレン−ブタノ
ール1:l溶媒10gの組成を有する混合液に、硬化剤
(金属触媒):商品名 CR−L5を1重量%(0,2
g)加えてよく攪拌し、Alを1000人蒸着Ihガラ
ス基板上にドクターブレード4ミルを用いてコーティン
グを行った。[Example 1] (Method for producing charge retention medium) 1 weight of curing agent (metal catalyst) (trade name CR-L5) was added to a mixed solution having a composition of 10 g of methylphenyl silicone resin and 10 g of xylene-butanol 1:l solvent. %(0,2
g) The mixture was added and stirred well, and Al was coated on a 1,000-person evaporation Ih glass substrate using a doctor blade 4 mil.
その後150°C,lhrの乾燥を行ない、膜厚10μ
mの電荷保持媒体を得た。After that, drying was performed at 150°C for 1 hour, and the film thickness was 10μ.
A charge retention medium of m was obtained.
(静電画像記録方法〕
第2図に示すように、後述する参考例1で作製する有a
感光体(PVK −TNF) 1と、上記電荷保持媒体
を、膜厚10μmのポリエステルフィルムをスペーサー
として使用し、対向させて重ね合わせ、両電極間7.1
3に、感光体側を負、電荷保持層側を正にして、−70
0Vの直流電圧を印加する。(Electrostatic image recording method) As shown in FIG.
The photoconductor (PVK-TNF) 1 and the above-mentioned charge retention medium are stacked facing each other using a 10 μm thick polyester film as a spacer, and the distance between the two electrodes is 7.1.
3, with the photoconductor side negative and the charge retention layer side positive, -70
Apply a DC voltage of 0V.
次ぎに電圧印加状態で、感光体側より照度1000ルツ
クスのハロゲンランプを光源とする露光を1秒間行い、
露光終了後、電圧をOFFとした。Next, with a voltage applied, exposure was performed from the photoreceptor side for 1 second using a halogen lamp with an illuminance of 1000 lux as a light source.
After the exposure was completed, the voltage was turned off.
光が入射した部分の光導電層9は導電性を示し、電荷保
持層11との間に放電が生じ、電荷保持層11に電荷が
蓄積される0次いで電荷保持媒体3を取り出すことによ
り静電潜像の形成が終了する。The photoconductive layer 9 in the portion where the light is incident exhibits conductivity, and discharge occurs between the photoconductive layer 9 and the charge retention layer 11, and charges are accumulated in the charge retention layer 11.Next, by taking out the charge retention medium 3, the electrostatic charge is removed. Formation of the latent image is completed.
(保護膜の形成方法)
静電画像を記録した電荷保持層表面に、保護膜としてジ
メチルシリコンオイル(粘度10.000cps、東芝
シリコーン■)を10mg滴下し、更に20μmポリエ
ステルフィルムを重ねてラミネートを行い、電荷保持層
表面にポリエステルフィルムを密着させた。(Method for forming a protective film) 10 mg of dimethyl silicone oil (viscosity 10.000 cps, Toshiba Silicone ■) was dropped as a protective film on the surface of the charge retention layer on which an electrostatic image was recorded, and then a 20 μm polyester film was layered and laminated. , a polyester film was adhered to the surface of the charge retention layer.
(電荷保持特性)
上記静電画像を記録後、保護膜を積層しない状態での電
荷保持層上には、表面電位計により一100■の表面電
位が測定され、一方未露光部では表面電位はO■であっ
たが、保aiIla上から表面電位を測定した結果、保
護膜を積層しないで測定した表面電位測定結果と同様の
−10’OVが得られた。(Charge Retention Characteristics) After recording the electrostatic image, the surface potential of 1100μ is measured with a surface potentiometer on the charge retention layer without a protective film, while the surface potential in the unexposed area is However, as a result of measuring the surface potential from above the aiIla, -10'OV was obtained, which is similar to the surface potential measurement result measured without laminating a protective film.
〔実施例2〕
ポリエステルフィルム20μm上に、上記実施例保護膜
の形成方法においてシリコンオイルに代えてシリコンゴ
ム(TSE326;東芝シリコン■)をドクターブレー
ドによりコーティングし、100°C,1時間乾燥後、
2μmの膜を形成した。[Example 2] A 20 μm polyester film was coated with silicone rubber (TSE326; Toshiba Silicon ■) using a doctor blade instead of silicone oil in the protective film forming method of the above example, and after drying at 100°C for 1 hour,
A 2 μm film was formed.
この保護膜を実施例1で静電画像が記録された電荷保持
特性における電荷保持層表面に、ラミネートを行なった
。その表面電位測定をしたところ、シリコンオイルを使
用した時と同様の電荷保持性を有してした。This protective film was laminated on the surface of the charge retention layer with charge retention characteristics on which an electrostatic image was recorded in Example 1. When the surface potential was measured, it was found that it had the same charge retention properties as when silicone oil was used.
(実施例3〕
厚さ1+nmのガラス支持体上にAlを1000人蒸着
レオ次いでポリパラキシリレンを電荷保持層として蒸着
により形成することで電荷保持媒体を得た。(Example 3) A charge retention medium was obtained by forming Al on a glass support having a thickness of 1+ nm by 1000-person vapor deposition, and then polyparaxylylene was formed as a charge retention layer by vapor deposition.
次いで静電電荷を記録した電荷保持層表面に含弗素樹脂
(旭硝子■製)を弗素系溶剤に溶解させたン容ン夜をス
ピンナーコーティング法によりコーティングし、3μm
の膜厚の保護層を形成した。この保護膜上から表面電位
を測定した結果、保、ii膜を積層しないで測定した表
面電位測定結果と同様の一100Vが得られた。Next, the surface of the charge-retaining layer on which electrostatic charges were recorded was coated with fluorine-containing resin (manufactured by Asahi Glass Co., Ltd.) dissolved in a fluorine-based solvent using a spinner coating method to form a 3 μm layer.
A protective layer with a thickness of . As a result of measuring the surface potential from above this protective film, a value of 1100 V was obtained, which is the same as the surface potential measured without laminating the protective film and the ii film.
〔実施例4〕
シリコーン系剥離剤で片面を剥離処理した6μm厚のポ
リエステルフィルム(東し■製)の表面にステへライト
エステル10(理化バーキュレス社製)を、モノクロル
ヘンゼンに溶解した30%溶液をロールコータ−により
乾燥厚み7μmになるように塗布して、溶融転写用フィ
ルムを作製した。[Example 4] Stehelite Ester 10 (manufactured by Rika Vercules) was applied to the surface of a 6 μm thick polyester film (manufactured by Toshi), one side of which was released with a silicone release agent, and 30% dissolved in monochlorhenzene. The solution was applied with a roll coater to a dry thickness of 7 μm to prepare a melt transfer film.
実施例1と同様に作製した電荷保持媒体上に表面電位が
100Vとなるように帯電し、次いで上記溶融転写用フ
ィルムと合わせて、ヒートシーラーを用い、60°Cに
加熱したヒートロールにより電荷保持媒体上に保護層を
転写して作製した。A charge retention medium prepared in the same manner as in Example 1 was charged to a surface potential of 100 V, and then combined with the above film for melt transfer, charge retention was performed using a heat roll heated to 60°C using a heat sealer. It was produced by transferring a protective layer onto a medium.
この保護膜上から表面電位を測定した結果、保護膜を積
層しないで測定した表面電位測定結果と同様の一100
Vが得られ、溶融転写により保護膜が形成しうることを
確認した。The result of measuring the surface potential from above this protective film was 110%, which was the same as the surface potential measurement result measured without laminating the protective film.
It was confirmed that V was obtained and that a protective film could be formed by melt transfer.
〔実施例5〕
第5図は、実施例1の電荷保持媒体について電荷保持特
性の経時変化をを示す図である。[Example 5] FIG. 5 is a diagram showing changes over time in charge retention characteristics of the charge retention medium of Example 1.
図中A、B線は上記実施例1において保護膜を積層しな
いものを示し、A線は、温度25°C,、湿度30%の
状態で放置して測定したものであるが、3ケ月経過して
も殆ど電荷保持媒体上の表面電荷は減衰しなかった。ま
たB線は温度40°C1湿度75%の状態で放置して測
定したものであるが、1週間経過した状態では約25%
しか減衰しなかった。Lines A and B in the figure show the case in which no protective film was laminated in Example 1, and line A was measured after being left at a temperature of 25°C and a humidity of 30%, after 3 months had elapsed. However, the surface charge on the charge retention medium hardly attenuated. In addition, the B line was measured after being left at a temperature of 40°C and humidity of 75%, but after one week, it was approximately 25%
There was only attenuation.
〔実施例6〕
第6図は、実施例3の電荷保持媒体について電荷保持特
性の経時変化を示す図である。[Example 6] FIG. 6 is a diagram showing changes over time in charge retention characteristics of the charge retention medium of Example 3.
図中○、口は保護膜を積層しないもの、×、Δは保護1
1グを積層したものの電荷保持特性を示し、O1×は、
室温、湿度50%の状態で放置して測定したもの、また
口、△は温度40°C1湿度95%の状態で放置して測
定したものである。In the figure, ○ indicates that the mouth is not laminated with a protective film, × and Δ indicate protection 1.
It shows the charge retention characteristics of a stack of 1g, and O1x is:
Measurements were taken after being left at room temperature and humidity of 50%, and measurements were taken after being left at a temperature of 40° C. and humidity of 95%.
この図かられかるように、保護膜を積層することにより
電荷保持性が著しく向上することがわかる。即ちO1×
は、室温、湿度50%の状態で放置して測定したもので
あるが、1ケ月経過しても保護膜を有する保護層を積層
したもの(×印)の電荷保持媒体上の表面電荷は、保護
層を積層しないもの(O印)に比較し、減衰しなかった
。また口、Δは、温度40°C1湿度95%の状態で放
置して測定したものであるが、約1ケ月経過した状態で
保護膜を積層しないもの(口印)は45%減衰したが、
保護膜を積層したもの(△印)は、約35%しか減衰し
なかった。As can be seen from this figure, the charge retention property is significantly improved by laminating the protective film. That is, O1×
was measured after being left at room temperature and 50% humidity, but even after one month, the surface charge on the charge retention medium with the protective layer laminated with the protective film (marked with an x) was: There was no attenuation compared to the case where no protective layer was laminated (marked O). In addition, Δ was measured after being left at a temperature of 40°C and a humidity of 95%, and after about one month, the test without a protective film (kuchi) had a 45% attenuation.
The one in which a protective film was laminated (marked with △) had attenuation of only about 35%.
尚、保護膜を設けない場合、媒体を水中に浸漬すると電
荷は完全に消失したが、保護膜を有する場合には水中浸
漬により保護膜上からは電位読み取りができなかったが
、保護膜を剥離し、媒体表面の電位を測定したところ、
もとの電位が測定され、解像度にも変化が見られなかっ
た。In addition, when the medium was not provided with a protective film, the charge completely disappeared when the medium was immersed in water, but when the medium was provided with a protective film, the potential could not be read from above the protective film due to immersion in water, but the protective film was peeled off. When we measured the potential on the surface of the medium, we found that
The original potential was measured and no change in resolution was observed.
〔参考例1〕・・・有機感光体(PVK −TNF )
作製方法
ポリーN−ビニル力ルパヅール10g(北南香料(株)
製)、2,4.7−1−リニトロフルオレノン10g1
ポリエステル樹脂2g(バインダー:バイロン200東
洋紡(株)製)、テトラハイドロフラン(THF)90
gの組成を有する混合液を暗所で作製し、In2O2−
Sn02を約1000人の膜厚でスパッターしたガラス
基板(1fflI11厚)に、ドクターブレードを用い
て塗布し、60°Cで約1時間通風乾燥し、膜厚約10
μmの光導電層を有する感光層を得た。又完全に乾燥を
行うために、更に1日自然乾燥を行って用いた。[Reference Example 1]...Organic photoreceptor (PVK-TNF)
Preparation method Poly N-vinyl Lupadzul 10g (Kokunan Kaori Co., Ltd.)
), 2,4.7-1-linitrofluorenone 10g1
2 g of polyester resin (binder: Byron 200 manufactured by Toyobo Co., Ltd.), 90% tetrahydrofuran (THF)
A mixed solution having a composition of g was prepared in a dark place, and In2O2-
It was applied using a doctor blade to a glass substrate (1fflI11 thickness) sputtered with Sn02 to a film thickness of about 1000 nm, and dried with ventilation at 60°C for about 1 hour, resulting in a film thickness of about 10 nm.
A photosensitive layer with a photoconductive layer of μm was obtained. In addition, in order to completely dry the sample, it was further air-dried for one day before use.
本発明は電極層と電荷保持特性の高い電荷保持層とから
なる電荷保持媒体において、電荷保持層上に保護膜を形
成し電荷保持層表面を絶縁性被膜で積層して保護するこ
とにより、電荷保持特性を向上させ、電荷保持媒体にお
ける像情報を長期間保存させることを可能としたもので
あり、導体の物理的な接触があっても表面電位を減衰さ
せない作用効果を奏するものである。情報の再生にあた
っては、この保護膜は剥離する、またはしないで蓄積さ
れた情報電荷を再生することができる。The present invention provides a charge retention medium consisting of an electrode layer and a charge retention layer with high charge retention properties, in which a protective film is formed on the charge retention layer and the surface of the charge retention layer is laminated with an insulating film to protect the charge retention layer. It improves the retention characteristics and makes it possible to preserve image information on a charge retention medium for a long period of time, and has the effect of not attenuating the surface potential even when there is physical contact between conductors. When reproducing information, the protective film may or may not be peeled off, allowing the accumulated information charges to be reproduced.
このようにして保持される像電荷は、任意の時点で静電
潜像の局部電位を任意の走査密度で読み出し出力するこ
とができるので、恰も銀塩写真を撮影し、適当なときに
その写真を光学走査して再出力する如く、高画質の原画
と任意時点での出力を行うことができる記録保持媒体が
得られる。また本発明の静電荷記録保持媒体を使用する
ことにより、直接電位検出する場合には現像手段のよう
な物理的、または化学的手段を必要としないので、安価
で簡便な記録再生システムをつくることができるもので
ある。The image charge held in this way allows the local potential of the electrostatic latent image to be read out and output at any scanning density at any time, so it is possible to take a silver halide photograph and then print that photograph at an appropriate time. By optically scanning the images and re-outputting them, a recording holding medium is obtained that can output high-quality original images and output them at arbitrary times. Furthermore, by using the electrostatic charge recording and holding medium of the present invention, physical or chemical means such as a developing means are not required when detecting potential directly, so it is possible to create an inexpensive and simple recording and reproducing system. It is something that can be done.
第1図は本発明の電荷保持媒体の断面図、第2図は電荷
保持媒体への静電画像記録方法を説明するための図、第
3図は直流増幅型の電位読み取り方法の例を示す図、第
4図は本発明の静電画像再生の概略構成を示す図、第5
図は実施例1で作製した保護膜を有する電荷保持媒体の
電荷保持特性を示す図、第6図は実施例3で作製した保
護膜を有する電荷保持媒体の電荷保持特性を示す図であ
る。
1は感光体、2はスペーサー、3は電荷保持媒体、5は
光導電層支持体、7は感光体電極、9は光導電層、11
は電荷保持層、12は電荷保持層欠落部、13は電荷保
持媒体電極、15は電荷保持層支持体、17は電源、2
0は保護層、21は電位読み取り部、23は検出電極、
25はガード電極、27はコンデンサ。
蔦1図
出 願 人 大日本印刷株式会社代理人 弁理士
内1)亘彦(外4名)(ロ)
ト
(ハ)
第
、2゜
図
(ハ)
(ニ)
ピ=ヨヂョー
α0
−ラ一目FIG. 1 is a cross-sectional view of the charge retention medium of the present invention, FIG. 2 is a diagram for explaining an electrostatic image recording method on the charge retention medium, and FIG. 3 is an example of a DC amplification type potential reading method. Figures 4 and 5 are diagrams showing a schematic configuration of electrostatic image reproduction according to the present invention.
This figure is a diagram showing the charge retention characteristics of the charge retention medium having the protective film produced in Example 1, and FIG. 6 is a diagram showing the charge retention properties of the charge retention medium having the protection film produced in Example 3. 1 is a photoreceptor, 2 is a spacer, 3 is a charge holding medium, 5 is a photoconductive layer support, 7 is a photoreceptor electrode, 9 is a photoconductive layer, 11
12 is a charge retention layer, 12 is a charge retention layer missing portion, 13 is a charge retention medium electrode, 15 is a charge retention layer support, 17 is a power source, and 2
0 is a protective layer, 21 is a potential reading section, 23 is a detection electrode,
25 is a guard electrode, and 27 is a capacitor. Ivy 1 drawing Applicant Dainippon Printing Co., Ltd. agent Patent attorney (1) Nobuhiko (other 4 people) (b)
Claims (4)
いて、電荷保持層上に保護膜を積層して電荷保持特性を
向上させたことを特徴とする保護膜を有する電荷保持媒
体。(1) A charge-retaining medium comprising an electrode layer and a charge-retaining layer, the charge-retaining medium having a protective film characterized in that a protective film is laminated on the charge-retaining layer to improve charge-retaining properties.
請求項1記載の保護膜を有する電荷保持媒体。(2) The charge retention medium having a protective film according to claim 1, wherein the protective film is an insulating plastic film.
ングすることにより形成されるものである請求項1記載
の保護膜を有する電荷保持媒体。(3) The charge retention medium having a protective film according to claim 1, wherein the protective film is formed by coating an insulating plastic solution.
することにより形成されるものである請求項1記載の保
護膜を有する電荷保持媒体。(4) The charge retention medium having a protective film according to claim 1, wherein the protective film is formed by melt-transferring an insulating molten plastic.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6724389A JP2832023B2 (en) | 1988-05-24 | 1989-03-18 | Charge holding medium having protective film |
EP00111166A EP1033706B1 (en) | 1988-05-17 | 1989-05-17 | Electrostatic information recording medium and electrostatic information recording and reproducing method |
ES89305009T ES2081838T3 (en) | 1988-05-17 | 1989-05-17 | ELECTROSTATIC MEDIA FOR RECORDING INFORMATION AND ELECTROSTATIC METHOD FOR RECORDING AND PLAYING INFORMATION. |
KR1019890006573A KR100223698B1 (en) | 1988-03-15 | 1989-05-17 | Electrostatic information recording mediem and electrostatic information recording and producing method |
ES95201292T ES2153011T3 (en) | 1988-05-17 | 1989-05-17 | MEDOSTATIC INFORMATION REGISTRATION MEDIA AND ELECTROSTATIC INFORMATION REGISTRATION AND REPRODUCTION PROCEDURE. |
DE68925436T DE68925436T2 (en) | 1988-05-17 | 1989-05-17 | Electrostatic information recording medium and electrostatic information recording and reproducing method |
EP95201292A EP0676752B1 (en) | 1988-05-17 | 1989-05-17 | Electrostatic information recording medium and electrostatic information recording and reproducing method |
CA000600758A CA1339152C (en) | 1988-05-17 | 1989-05-17 | Electrostatic information recording medium and electrostatic informationrecording and reproducing method |
EP89305009A EP0342967B1 (en) | 1988-05-17 | 1989-05-17 | Electrostatic information recording medium and electrostatic information recording and reproducing method |
KR1019990004617A KR100239961B1 (en) | 1988-05-17 | 1999-02-10 | Electrostatic information recordong medium and apparatus |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12755488 | 1988-05-24 | ||
JP63-127554 | 1988-05-24 | ||
JP6724389A JP2832023B2 (en) | 1988-05-24 | 1989-03-18 | Charge holding medium having protective film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02203353A true JPH02203353A (en) | 1990-08-13 |
JP2832023B2 JP2832023B2 (en) | 1998-12-02 |
Family
ID=26408424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6724389A Expired - Lifetime JP2832023B2 (en) | 1988-03-15 | 1989-03-18 | Charge holding medium having protective film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2832023B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903296A (en) * | 1993-04-26 | 1999-05-11 | Dai Nippon Printing Co., Ltd. | Photoelectric sensor, information recording system and information recording and reproducing method |
CN108231916A (en) * | 2017-12-07 | 2018-06-29 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of photovoltaic module of resisting potential induced degradation |
-
1989
- 1989-03-18 JP JP6724389A patent/JP2832023B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903296A (en) * | 1993-04-26 | 1999-05-11 | Dai Nippon Printing Co., Ltd. | Photoelectric sensor, information recording system and information recording and reproducing method |
CN108231916A (en) * | 2017-12-07 | 2018-06-29 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of photovoltaic module of resisting potential induced degradation |
CN108231916B (en) * | 2017-12-07 | 2023-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Photovoltaic module resistant to potential induction attenuation |
Also Published As
Publication number | Publication date |
---|---|
JP2832023B2 (en) | 1998-12-02 |
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