JPH02178086A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH02178086A JPH02178086A JP63331063A JP33106388A JPH02178086A JP H02178086 A JPH02178086 A JP H02178086A JP 63331063 A JP63331063 A JP 63331063A JP 33106388 A JP33106388 A JP 33106388A JP H02178086 A JPH02178086 A JP H02178086A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- recording medium
- recording layer
- crystallized
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 4
- 230000008025 crystallization Effects 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229920005668 polycarbonate resin Polymers 0.000 abstract description 2
- 239000004431 polycarbonate resin Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 11
- 239000011701 zinc Substances 0.000 description 8
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004125 X-ray microanalysis Methods 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光学的に侑報の記録、再生、及び消去が可能
な光記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical recording medium on which information can be optically recorded, reproduced, and erased.
近年来、レーザー光の照射により光学的特性(屈折率、
消衰係数1反射率等)を変化させて情報の記録、再生を
行なう情報記録媒体(以下単に「媒体」又は「光ディス
ク」とも記す)の開発が精力的に進められている。中で
も、反射率の低い非晶質の媒体にレーザー光を照射して
局部的に加熱することにより相変化を生じさせ、反射率
の高い結晶状態にして情報を記録する方式が、最近脚光
を浴びつつあり、追記型光ディスクとして実用化され始
めている。In recent years, optical properties (refractive index,
2. Description of the Related Art Information recording media (hereinafter simply referred to as "medium" or "optical disk") that record and reproduce information by changing extinction coefficient (extinction coefficient, reflectance, etc.) are being actively developed. Among these methods, a method of recording information by irradiating an amorphous medium with low reflectivity with a laser beam and locally heating it to cause a phase change, turning it into a crystalline state with high reflectance and recording information, has recently been in the spotlight. It is beginning to be put into practical use as a write-once optical disc.
かかる追記型光ディスクは、−原情報を記録したら一最
的に消去することはできないが、カルコゲナイド薄膜を
用いて非晶質と結晶間の相転移(相変化)を可逆的に生
じさせ、情報の記録、消去、再書き込みを可能とした記
録媒体、例えばTe−0−Ge−3n、5n−Te−3
e、Te−Ge−3b、In−3b−Te、In−3e
等が知られている。Such write-once optical discs are capable of: - Once the original information is recorded, it cannot be completely erased; however, a chalcogenide thin film is used to reversibly cause a phase transition between an amorphous state and a crystalline state. Recording media that enable recording, erasing, and rewriting, such as Te-0-Ge-3n, 5n-Te-3
e, Te-Ge-3b, In-3b-Te, In-3e
etc. are known.
従来の技術では、3元系の組合せの例が多数あり、その
中から光記録媒体(光ディスク)として使用できる元素
の組合せ及び組成を決定するのは困難だった。ところで
、金属間化合物を生成し得る、ある2元系に第3元素を
添加した場合、結晶化温度が高くなり、非晶質の安定性
が向上し、結晶化速度も大きくなるので高速消去も゛実
現できる。In the conventional technology, there are many examples of combinations of ternary systems, and it is difficult to determine the combination of elements and composition that can be used as an optical recording medium (optical disk) from among them. By the way, when a third element is added to a binary system that can generate intermetallic compounds, the crystallization temperature increases, the stability of the amorphous state improves, and the crystallization speed increases, so high-speed erasure is also possible.゛It can be achieved.
しかるに、母体となる2元系の金属間化合物を生成する
前に第3の元素が2元系を構成する各元素と化合物を作
ってしまうため、記録、再生、消去を繰返してゆくと、
金属間化合物の組成が次第にずれてゆき、単相の結晶化
が実現できなくなり、消去特性が低下してしまうという
欠点があった。However, because the third element forms a compound with each element that makes up the binary system before creating the base binary intermetallic compound, if recording, playback, and erasing are repeated,
There was a drawback that the composition of the intermetallic compound gradually shifted, making it impossible to achieve single-phase crystallization, resulting in a decrease in erasing properties.
本発明は、光学的エネルギーの印加によって、光学的特
性が変化する記録層を基板に形成し、この記録層をZn
、Ge、Sb3元素よりならしめ、その組成比をZnG
eSb2化合物組成近傍、即ち10at、X< Z n
<40at、%、 10atJ< G e <40a
t、%。The present invention forms a recording layer on a substrate whose optical characteristics change by applying optical energy, and this recording layer is made of Zn.
, Ge, and Sb, and the composition ratio is ZnG.
eSb2 compound composition vicinity, i.e. 10at, X< Z n
<40at,%, 10atJ<G e <40a
t,%.
35at、%< S b <65at.%の範囲である
光記録媒体を提供することにより、上記問題点を解決し
た。35 at, %<S b <65 at. The above problems have been solved by providing an optical recording medium that is in the range of %.
本発明の光ディスクの一実施例について説明する。書替
え型光ディスクには、結晶−非晶質間の相変化を安定に
行なうために、記録媒体を構成する元素の単相化を図り
、媒体を構成する第■族の元素Znと同第1v族のGe
と同第V族のsbの組成比を、ZnGeSb2化合物組
成近傍とした。An embodiment of the optical disc of the present invention will be described. In order to stably change the phase between crystalline and amorphous states, rewritable optical discs are designed to have single-phase elements that make up the recording medium, and include Zn, a group 1V element that makes up the medium. Ge of
The composition ratio of sb of the same group V was set near the composition of the ZnGeSb2 compound.
組成比がZnGeSb2 (即ち1:1:2)からず
れるに従い、ZnとGe、Znとsb等の化合物を生成
し易くなるので、記録層として用いるには、10at、
%<Z n<40at、%、 10at9%<Ge<
40at、χ、 35at.%<Sb<65at、%
の範囲が好ましいことが、測定、評価の結果明らかに
なった。As the composition ratio deviates from ZnGeSb2 (i.e. 1:1:2), compounds such as Zn and Ge and Zn and sb are more likely to be produced.
%<Z n<40at, %, 10at9%<Ge<
40at, χ, 35at. %<Sb<65at,%
As a result of measurement and evaluation, it has become clear that a range of .
上記Zn、Ge、Sbから成る非晶質薄膜に、レーザー
光を照射して加熱することにより、ZnGeSb2化合
物を生成し、結晶化させる。一方、生成した化合物の融
点以上に媒体を加熱した後、急冷することにより非晶質
化できる。これらに伴う光学的特性の変化、例えば反射
率変化を利用して、信号の記録及び消去を実現すること
ができた。By irradiating and heating the amorphous thin film made of Zn, Ge, and Sb, a ZnGeSb2 compound is generated and crystallized. On the other hand, the medium can be made amorphous by heating the medium to a temperature higher than the melting point of the produced compound and then rapidly cooling it. Recording and erasing of signals could be realized by utilizing changes in optical properties associated with these, such as changes in reflectance.
以下、本発明の光記録媒体の具体例について、図面を参
照しながら説明する。第1図は本発明の媒体の拡大部分
断面図である。1はトラフキング用のグループが予め例
えばスパイラル状に形成されたポリカーボネート樹脂基
板(以下単に「基板」とも記す)、であり、この基板1
の片面6;第1の保護層2として、ZnS (硫化亜鉛
)を約100nnの厚さに真空蒸着する。続いて上記3
金属元素としてZ。、Ge、Sbを用い、これらを夫々
個別のタングステン製のボートから蒸発させて、記録層
3を3元共蒸着で8001形成(成M)する、従って、
記録層3はZn、Ge、Sbの混合膜となり、XMA
<X線マイクロアナリシス)装置で分析したところ、そ
の組成比は、Zn : Ge : 5b=35:20:
45であった。この記録層3の上に更に第2の保護層4
としてZnSを約100nnの厚さに真空蒸着した後、
紫外線硬化樹脂層らをスピンコードして、光記録媒体6
を完成する。Hereinafter, specific examples of the optical recording medium of the present invention will be described with reference to the drawings. FIG. 1 is an enlarged partial cross-sectional view of the medium of the present invention. Reference numeral 1 denotes a polycarbonate resin substrate (hereinafter also simply referred to as "substrate") on which groups for troughing have been formed in advance, for example, in a spiral shape, and this substrate 1
One side 6: ZnS (zinc sulfide) is vacuum-deposited as the first protective layer 2 to a thickness of about 100 nm. Next, the above 3
Z as a metallic element. , Ge, and Sb are evaporated from separate tungsten boats, and the recording layer 3 is formed (formed) by ternary co-evaporation. Therefore,
The recording layer 3 is a mixed film of Zn, Ge, and Sb, and
When analyzed using an <X-ray microanalysis) device, the composition ratio was Zn:Ge:5b=35:20:
It was 45. A second protective layer 4 is further formed on this recording layer 3.
After vacuum-depositing ZnS to a thickness of about 100 nm,
The ultraviolet curable resin layer is spin-coded to form an optical recording medium 6.
complete.
この光記録媒体6を線速度2.0ra/sで回転させ、
1トラツクにDC出力(記録パワー)6mWの半導体レ
ーザー光(波長峙780nm)をディスク表面(記録層
3)に照射する。これによって記録層3が結晶化してそ
の部分の反射率が増大した。This optical recording medium 6 is rotated at a linear velocity of 2.0 ra/s,
A semiconductor laser beam (wavelength: 780 nm) with a DC output (recording power) of 6 mW is irradiated onto the disk surface (recording layer 3) for one track. This crystallized the recording layer 3 and increased the reflectance of that portion.
この結晶化したトラック上に、情報信号等によって強度
変調されたレーザー光の光スポットを照射すると非晶質
化し、その個所の反射率が低下した状態として情報信号
の記録を行なうことができる。When this crystallized track is irradiated with a light spot of a laser beam whose intensity is modulated by an information signal or the like, it becomes amorphous, and an information signal can be recorded with the reflectance at that location reduced.
実際に、単一周波数の信号(700KIIZ )をレー
ザー出力10mWで記録した場合のC/Nは40dBで
あった。このときの再生レーザー出力は1mWである。In fact, when a single frequency signal (700 KIIZ) was recorded with a laser output of 10 mW, the C/N was 40 dB. The reproduction laser output at this time is 1 mW.
この記録トラックの上に、DC出力6mWの半導体レー
ザー光を3回照射すると反射率が初期の結晶化状態に戻
り、C/ Nは15dBに低下し、良好な結果が得られ
た。When this recording track was irradiated three times with semiconductor laser light with a DC output of 6 mW, the reflectance returned to its initial crystallized state and the C/N decreased to 15 dB, giving good results.
叙上の如く、本発明の光記録媒体によれば、次のような
優れた特長を有する。As described above, the optical recording medium of the present invention has the following excellent features.
03元系の金属間化合物組成近傍の記録層を形成し、光
学的エネルギーの印加によって、情報の記録、再生、消
去を行なうのに適した光記録媒体を提供できる。An optical recording medium suitable for recording, reproducing, and erasing information can be provided by forming a recording layer having a composition near the 03-element intermetallic compound and applying optical energy.
■記録媒体である周期率表■族の元素Zn、同IV族の
元素Ge、同V族の元素sbの組成比を、ZnGeSb
2化合物組成近傍とすることにより、結晶化した場合に
単一相を生成し易くでき、結晶−非晶質間の相変化を安
定に行なうことができる。■The composition ratio of element Zn of group ■ of the periodic table, element Ge of group IV, and element sb of group V of the periodic table, which is a recording medium, is
By setting the composition to be close to the two-compound composition, a single phase can be easily generated when crystallized, and a phase change between crystalline and amorphous can be stably performed.
第1図は本発明の光記録媒体の拡大部分断面図である。
1・・・基板、2,4・・・第1.第2の保護層、3・
・・記録層、5・・・紫外線硬化樹脂層、6・・・光記
録媒体。
特許出願人 日本ビクター株式会社
代表者 埋木 邦夫FIG. 1 is an enlarged partial sectional view of the optical recording medium of the present invention. 1... Substrate, 2, 4... 1st. second protective layer, 3.
... Recording layer, 5... Ultraviolet curing resin layer, 6... Optical recording medium. Patent applicant: Kunio Umiki, representative of Victor Japan Co., Ltd.
Claims (1)
する記録層を基板に形成した光記録媒体であって、該記
録層がZn、Ge、Sb3元素からなり、その組成比が
ZnGeSb_2化合物組成近傍、即ち、10at.%
<Zn<40at.%、10at.%<Ge<40at
.%、35at.%<Sb<65at.%の範囲である
ことを特徴とする光記録媒体。An optical recording medium in which a recording layer whose optical characteristics change upon application of optical energy is formed on a substrate, the recording layer being composed of three elements of Zn, Ge, and Sb, the composition ratio of which is close to the ZnGeSb_2 compound composition. , that is, 10 at. %
<Zn<40at. %, 10at. %<Ge<40at
.. %, 35at. %<Sb<65at. % range.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63331063A JPH02178086A (en) | 1988-12-29 | 1988-12-29 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63331063A JPH02178086A (en) | 1988-12-29 | 1988-12-29 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02178086A true JPH02178086A (en) | 1990-07-11 |
Family
ID=18239443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63331063A Pending JPH02178086A (en) | 1988-12-29 | 1988-12-29 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02178086A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7083894B2 (en) | 2002-06-14 | 2006-08-01 | Tdk Corporation | Optical recording medium |
CN110233203A (en) * | 2018-03-06 | 2019-09-13 | 江苏理工学院 | A kind of class superlattices Zn-Sb/Ge-Sb nano phase change memory films and preparation method thereof for worst hot case |
-
1988
- 1988-12-29 JP JP63331063A patent/JPH02178086A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7083894B2 (en) | 2002-06-14 | 2006-08-01 | Tdk Corporation | Optical recording medium |
CN110233203A (en) * | 2018-03-06 | 2019-09-13 | 江苏理工学院 | A kind of class superlattices Zn-Sb/Ge-Sb nano phase change memory films and preparation method thereof for worst hot case |
CN110233203B (en) * | 2018-03-06 | 2023-04-07 | 江苏理工学院 | Superlattice-like Zn-Sb/Ge-Sb nano phase change storage film for high-temperature working condition and preparation method thereof |
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