JPH0196374A - Clad target material for sputtering - Google Patents
Clad target material for sputteringInfo
- Publication number
- JPH0196374A JPH0196374A JP25117487A JP25117487A JPH0196374A JP H0196374 A JPH0196374 A JP H0196374A JP 25117487 A JP25117487 A JP 25117487A JP 25117487 A JP25117487 A JP 25117487A JP H0196374 A JPH0196374 A JP H0196374A
- Authority
- JP
- Japan
- Prior art keywords
- target material
- backing plate
- sputtering
- clad
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013077 target material Substances 0.000 title claims abstract description 34
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 16
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 5
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 238000005477 sputtering target Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000007767 bonding agent Substances 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、各工業分野において薄膜形成技術として、と
りわけ半導体分野においてＩＣ基板製造プロセスで薄膜
素子及び電極、配線などを形成する為のスパッタ法に用
いるクラッドターゲット材の改良に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention is a thin film forming technology in various industrial fields, and particularly in the semiconductor field, a sputtering method for forming thin film elements, electrodes, wiring, etc. in an IC substrate manufacturing process. This invention relates to improvements in clad target materials used in
（従来の技術とその問題点）
従来のスパッタリング用ターゲット材は、バッキングプ
レートにメタルボンディング材にて接合して使用してい
る。しかしこの使用法ではターゲット材をバッキングプ
レートから取外して交換することはむずかしいので、バ
ッキングプレート諸共即ちターゲットを取外すことにな
り、その交換に時間がかかったり、またターゲット材の
交換時にバッキングプレート側を冷却しているターゲッ
ト材冷却水の配管を取外す部分からスパッタリング装置
の真空槽への汚染が生じないようにする配慮が必要など
段取作業が甚だ面倒であった。(Prior art and its problems) Conventional sputtering target materials are used by being bonded to a backing plate with a metal bonding material. However, in this usage method, it is difficult to remove and replace the target material from the backing plate, so the backing plate and target must be removed, which takes time, and the backing plate side is cooled when replacing the target material. The setup work was extremely troublesome, as care had to be taken to prevent contamination of the vacuum chamber of the sputtering equipment from the part where the target material cooling water piping was removed.
そこで、ターゲット材をメタルボンディング材でバッキ
ングプレートに接合するのをやめて、第１図に示す如く
ターゲット材ｌを環状の取付治具２を介してバッキング
プレート３に直に接触保持する。ことが考えられている
。この場合バンキングプレート３でのターゲット材１の
冷却効果を上げる為、第２図に示す如くターゲット材ｌ
のバ・ンキングプレート３と接触する側に熱伝導度の良
好な高純度のＣｕ基板４をメタルボンディング材５にて
接合してクラッドターゲット材６とし、これのＣｕ基板
４を第３図に示す如くバッキングプレート３に環状の取
付金具２にて密着することが行われる。しかしＣｕ製バ
ッキングプレートの場合、使用中にバッキングプレート
３とクラッドターゲット材６のＣｕ基板４とが圧着状態
となり、使用後バッキングプレート３から取外すことが
困難になるという問題点があった。Therefore, the target material 1 is not bonded to the backing plate with the metal bonding material, and the target material 1 is held in direct contact with the backing plate 3 via the annular mounting jig 2 as shown in FIG. That is what is being considered. In this case, in order to increase the cooling effect of the target material 1 on the banking plate 3, as shown in FIG.
A high-purity Cu substrate 4 with good thermal conductivity is bonded to the side in contact with the banking plate 3 using a metal bonding material 5 to form a clad target material 6, and this Cu substrate 4 is shown in FIG. The annular mounting bracket 2 is closely attached to the backing plate 3 as shown in FIG. However, in the case of a backing plate made of Cu, there is a problem that the backing plate 3 and the Cu substrate 4 of the clad target material 6 come into contact with each other during use, making it difficult to remove the backing plate 3 from the backing plate 3 after use.
（発明の目的）
本発明は、上記問題点を解決すべくなされたもので、使
用中にＣｕ基板がバッキングプレートに熱圧着されるこ
とがなく、使用後バッキングプレートから簡単に取外す
ことのできるスパッタリング用クラッドターゲット材を
提供することを目的とするものである。(Objective of the Invention) The present invention has been made to solve the above-mentioned problems, and is a sputtering method that prevents the Cu substrate from being thermocompression bonded to the backing plate during use and allows it to be easily removed from the backing plate after use. The purpose of this invention is to provide a clad target material for
（問題点を解決するための手段）
上記問題点を解決するための本発明の技術的手段は、ク
ラッドターゲット材のＣｕ基板の高純度品位を損なうこ
となく、即ち基板のＣｕの純度を９９．７％以上とし、
且つＺｎ、Ｉｎ、Ｍｎ、Ｓｂ、Ｂｅ、、Ｃａ、Ｃｒ、Ｔ
ｅ、Ｙ、Ｎｂ、ＭｏＸＴａ。(Means for Solving the Problems) The technical means of the present invention for solving the above problems is to increase the purity of the Cu substrate to 99.9% without impairing the high purity quality of the Cu substrate of the clad target material. 7% or more,
And Zn, In, Mn, Sb, Be, Ca, Cr, T
e, Y, Nb, MoXTa.
Ｓｎの少なくとも１種以上合計で１００〜３ 、０００
重量ｐｐｍ 添加したことを特徴とするものである。At least one type of Sn, total of 100 to 3,000
It is characterized by adding ppm by weight.
（作用）
上記のように構成されたスパッタリング用クラッドター
ゲット材は、Ｃｕ基板の純度を９９．７％以上としてい
るので、良好な熱伝導性によりバッキングプレート側か
らの冷却効果が十分である。またＣｕ基板に前述の金属
の少なくとも１種以上合計で１００〜３，０００重ｆｉ
ｐｐｍ添加しているので、Ｃｕの拡散が抑制されると共
に再結晶が高くなって、使用中にバッキングプレートと
熱圧着されるごとがなくなる。(Function) In the sputtering clad target material configured as described above, the purity of the Cu substrate is 99.7% or more, so the cooling effect from the backing plate side is sufficient due to good thermal conductivity. In addition, a total of 100 to 3,000 heavy fi of at least one of the above-mentioned metals is applied to the Cu substrate.
Since ppm is added, the diffusion of Cu is suppressed and recrystallization is increased, so that there is no possibility of bonding with the backing plate by thermocompression during use.
前述の金属の添加量を、少なくとも１種以上合計で１０
０〜３，０００重ｆｉｔｐｐｍとした理由は、１００重
ｈｉｐｐｍ未満ではバッキングプレートとの熱圧着を防
止することができず、３．０００重量ｐｐｍを超えると
、熱伝導性が悪くなり、冷却効果が低下するからである
。Addition amount of at least one of the above-mentioned metals is 10 in total.
The reason for setting the fit ppm to 0 to 3,000 weight ppm is that if it is less than 100 weight ppm, thermocompression bonding with the backing plate cannot be prevented, and if it exceeds 3,000 weight ppm, the thermal conductivity will deteriorate and the cooling effect will be reduced. This is because it decreases.
゛（実施例）
本発明のスパッタリング用ターゲット材の実施例を従来
例と共に説明する。(Example) Examples of the sputtering target material of the present invention will be described together with conventional examples.
下記の表の左欄に示す成分組成の材料より成る直径１５
２．０＋ｍ＋＋、厚さ４．０価の第２図に示されるＣｕ
基板４に、直径１５２．０＋＋Ｉ＋＋＋、厚さ１．０ｍ
ｍのＩｒより成るターゲット材１を、Ｉｎのメタルボン
ディング材５にて接合して、スパッタリング用クラッド
ターゲット材６を得た。Diameter 15 made of material with the composition shown in the left column of the table below.
2.0+m++, thickness 4.0 valent Cu shown in Figure 2
Substrate 4 has a diameter of 152.0++I+++ and a thickness of 1.0m.
A target material 1 made of Ir of m was bonded with a metal bonding material 5 of In to obtain a clad target material 6 for sputtering.
これらクラッドターゲット材６を各１０個第３図に示す
如＜５ＵＳ３０４より成る断面「型で外径１７０．０ｍ
ｍ、上端内径ｉ５３．ｏｍｍ、下端内径１４９．０ｍｍ
、厚さ６．０ｍｍの環状の取付治具２にてＣｕより成る
バッキングプレート３に押え、周方向の８ケ所をねじに
て締付けて夫ｈクラッドターゲント材６をバッキングプ
レート３に密着し、図示せぬスパッタリング装置の真空
槽内の陰極にセットし、ＤＣＩＫＷでスパッタリングを
３時間行って、陽極上の基板に【ｒ膜を形成した。この
スパッタリングにおいて、クラッドターゲット材６のバ
ッキングプレート３との圧着の有無を調べた処、下記の
表の右欄に示すような結果を得た。As shown in FIG.
m, upper end inner diameter i53. omm, lower end inner diameter 149.0mm
The clad target material 6 is tightly attached to the backing plate 3 by holding it against the backing plate 3 made of Cu using an annular mounting jig 2 with a thickness of 6.0 mm and tightening screws at eight locations in the circumferential direction. It was set on the cathode in a vacuum chamber of a sputtering device (not shown), and sputtering was performed with DCIKW for 3 hours to form an [r film] on the substrate on the anode. In this sputtering, the presence or absence of pressure bonding between the clad target material 6 and the backing plate 3 was investigated, and the results shown in the right column of the table below were obtained.
（以下余白）
上記の表で明らかなように従来例１．２のタララドター
ゲット材６は、バッキングプレー１−３と圧着したもの
が１０台のスパッタリング装置中９台と７台のスパッタ
リング装置で発見され、その圧着したタララドターゲッ
ト材６は、バッキングプレート３から取外すことができ
ず、バッキングプレート３ごと取外して交換せざるを得
なかった。(Leaving space below) As is clear from the table above, Talarad target material 6 of Conventional Example 1.2 was crimped with backing plate 1-3 in 9 out of 10 sputtering devices and in 7 sputtering devices. The discovered and crimped Talarad target material 6 could not be removed from the backing plate 3, and the entire backing plate 3 had to be removed and replaced.
一方、実施例のタララドターゲット材６はバッキングプ
レート３と圧着するものが皆無であった。On the other hand, none of the Talarad target materials 6 of Examples were pressure-bonded to the backing plate 3.
これはひとえにクラ・ノドターゲット材６のＣｕ５板４
へＺｎ、Ｉｎ、Ｍｎ、Ｓｂ、Ｂｅ、Ｃａ。This is just Cu5 plate 4 of Kuranodo target material 6.
to Zn, In, Mn, Sb, Be, Ca.
Ｃｒ、Ｔｅ、Ｙ、、Ｎｂ、Ｍｏ、Ｔａ、Ｓｎの少なくと
も１種以上を合計で１００〜３，０００重量ｐｐｍ添加
している為、Ｃｕ基板４のバッキングプレート３との熱
圧着が防止されるからに他ならない。Since a total of 100 to 3,000 ppm by weight of at least one of Cr, Te, Y, Nb, Mo, Ta, and Sn is added, thermocompression bonding of the Cu substrate 4 to the backing plate 3 is prevented. Nothing but empty.
（発明の効果）
以上の説明で判るように本発明のスパッタリング用クラ
ッドターゲット材は、Ｃｕ基板の純度を９９．７％以上
としているので、熱伝導性が良好で、バッキングプレー
ト側からの冷却が効率良く行われる。またＣｕ基板にＺ
ｎ、Ｉｎ、Ｍｎ、Ｓｂ、Ｂｅ、Ｃａ、Ｃｒ、Ｔｅ、ＹＳ
Ｎｂ、Ｍｏ、ｊａ。(Effects of the Invention) As can be seen from the above explanation, the sputtering clad target material of the present invention has a Cu substrate with a purity of 99.7% or more, so it has good thermal conductivity and can be cooled from the backing plate side. It is done efficiently. Also, Z on the Cu substrate
n, In, Mn, Sb, Be, Ca, Cr, Te, YS
Nb, Mo, ja.
Ｓｎの少なくとも１種以上を合計で１．００〜３，００
０重量ｐｐｍ添加しているので、Ｃｕの拡散が抑制され
ると共に再結晶温度が高くなって、使用中にバッキング
プレートと熱圧着されることがなく、使用後バッキング
プレートから簡単に取外すことができるという効果があ
る。At least one kind of Sn in total of 1.00 to 3,000
Since 0 ppm by weight is added, the diffusion of Cu is suppressed and the recrystallization temperature becomes high, so it is not thermocompressed to the backing plate during use and can be easily removed from the backing plate after use. There is an effect.
第１図は従来のスパッタリング用ターゲット材をバッキ
ングプレートに取付けた状態を示す断面図、第２図はス
パッタリング用クラッドターゲット材を示す断面図、第
３図は第２図のタララドターゲット材をバッキングプレ
ートに取付けた状態を示す断面図である。
出願人 田中貴金属工業株式会社Fig. 1 is a sectional view showing a conventional sputtering target material attached to a backing plate, Fig. 2 is a sectional view showing a clad target material for sputtering, and Fig. 3 is a backing of the Talarad target material of Fig. 2. It is a sectional view showing a state where it is attached to a plate. Applicant Tanaka Kikinzoku Kogyo Co., Ltd.
Claims (1)
リング用クラッドターゲット材に於いて、基板のＣｕの
純度が９９．７％以上で且つＺｎ、Ｉｎ、Ｍｎ、Ｓｂ、
Ｂｅ、Ｃａ、Ｃｒ、Ｔｅ、Ｙ、Ｎｂ、Ｍｏ、Ｔａ、Ｓｎ
の少なくとも１種以上合計で１００〜３，０００重量ｐ
ｐｍ添加されていることを特徴とするスパッタリング用
クラッドターゲット材。In a sputtering clad target material in which a target material is bonded to a Cu substrate, the purity of Cu in the substrate is 99.7% or more and Zn, In, Mn, Sb,
Be, Ca, Cr, Te, Y, Nb, Mo, Ta, Sn
A total of 100 to 3,000 p by weight of at least one of the following.
A clad target material for sputtering characterized by containing PM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25117487A JPH0196374A (en) | 1987-10-05 | 1987-10-05 | Clad target material for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25117487A JPH0196374A (en) | 1987-10-05 | 1987-10-05 | Clad target material for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0196374A true JPH0196374A (en) | 1989-04-14 |
Family
ID=17218786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25117487A Pending JPH0196374A (en) | 1987-10-05 | 1987-10-05 | Clad target material for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0196374A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331234B1 (en) * | 1999-06-02 | 2001-12-18 | Honeywell International Inc. | Copper sputtering target assembly and method of making same |
| US6758920B2 (en) | 1999-11-24 | 2004-07-06 | Honeywell International Inc. | Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets |
| US6849139B2 (en) | 1999-06-02 | 2005-02-01 | Honeywell International Inc. | Methods of forming copper-containing sputtering targets |
| US7740721B2 (en) * | 2003-03-17 | 2010-06-22 | Nippon Mining & Metals Co., Ltd | Copper alloy sputtering target process for producing the same and semiconductor element wiring |
| EP1715077A4 (en) * | 2003-12-25 | 2010-09-29 | Nippon Mining Co | Copper or copper alloy target/copper alloy backing plate assembly |
| KR101453148B1 (en) * | 2011-01-13 | 2014-10-27 | 스미도모쥬기가이고교 가부시키가이샤 | Target, and film forming apparatus having the same |
| US10665462B2 (en) | 2002-11-21 | 2020-05-26 | Jx Nippon Mining & Metals Corporation | Copper alloy sputtering target and semiconductor element wiring |
-
1987
- 1987-10-05 JP JP25117487A patent/JPH0196374A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331234B1 (en) * | 1999-06-02 | 2001-12-18 | Honeywell International Inc. | Copper sputtering target assembly and method of making same |
| US6645427B1 (en) | 1999-06-02 | 2003-11-11 | Honeywell International Inc. | Copper sputtering target assembly and method of making same |
| US6849139B2 (en) | 1999-06-02 | 2005-02-01 | Honeywell International Inc. | Methods of forming copper-containing sputtering targets |
| US6758920B2 (en) | 1999-11-24 | 2004-07-06 | Honeywell International Inc. | Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets |
| US6858102B1 (en) | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
| US10665462B2 (en) | 2002-11-21 | 2020-05-26 | Jx Nippon Mining & Metals Corporation | Copper alloy sputtering target and semiconductor element wiring |
| US7740721B2 (en) * | 2003-03-17 | 2010-06-22 | Nippon Mining & Metals Co., Ltd | Copper alloy sputtering target process for producing the same and semiconductor element wiring |
| EP1715077A4 (en) * | 2003-12-25 | 2010-09-29 | Nippon Mining Co | Copper or copper alloy target/copper alloy backing plate assembly |
| EP2626444A3 (en) * | 2003-12-25 | 2013-10-16 | JX Nippon Mining & Metals Corporation | Copper or copper alloy target/copper alloy backing plate assembly |
| US9472383B2 (en) | 2003-12-25 | 2016-10-18 | Jx Nippon Mining & Metals Corporation | Copper or copper alloy target/copper alloy backing plate assembly |
| KR101453148B1 (en) * | 2011-01-13 | 2014-10-27 | 스미도모쥬기가이고교 가부시키가이샤 | Target, and film forming apparatus having the same |
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